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IXYS(3783)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Diode Element Material | Number of Elements | Configuration | Diode Type | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Max Surge Current | Element Configuration | Power Dissipation | Turn On Delay Time | Max Reverse Leakage Current | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Configuration | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Input Capacitance | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXBH16N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Bulk | 2000 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | 16.26mm | ROHS3 Compliant | Lead Free | 16A | No | 3 | LOW SWITCHING LOSSES | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | 1.7kV | Standard | 3 | Insulated Gate BIP Transistors | 150W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 150W | 15 ns | 360 ns | 16A | 1.7kV | 1.7kV | MOTOR CONTROL | 160 ns | SILICON | 25ns | 43 ns | 6V @ 15V, 10A | 370 ns | 20V | 1700V | 5.5V | 100ns | 1360V, 10A, 10 Ω, 15V | 65nC | 40A | 15ns/160ns | 1.2mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXK200N65B4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2014 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 1.15kW | 1150W | N-CHANNEL | Single | 1.15kW | 370A | 650V | 1.7V | 1.4V | 1.7V @ 15V, 160A | PT | 20V | 6.5V | 400V, 100A, 1 Ω, 15V | 553nC | 1000A | 62ns/245ns | 4.4mJ (on), 2.2mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH30N170C | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2016 | XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 937W | 937W | 108A | 1.7kV | 3.7V | 3.7V @ 15V, 30A | 1700V | 850V, 30A, 10 Ω, 15V | 140nC | 255A | 28ns/150ns | 5.9mJ (on), 3.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBH20N300 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2009 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 1.35 μs | 50A | 3kV | 3.2V | POWER CONTROL | SILICON | 608 ns | 3.2V @ 15V, 20A | 695 ns | 20V | 3000V | 5V | 105nC | 140A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYX25N250CV1HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 937W | 220ns | 4V @ 15V, 25A | 2500V | 95A | 1250V, 25A, 5 Ω, 15V | 147nC | 235A | 15ns/230ns | 8.3mJ (on), 7.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGA20N120A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Surface Mount | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | unknown | Surface Mount | 1.59999g | -55°C~150°C TJ | Standard | e3 | PURE TIN | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*20N120 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 180W | 180W | 1 | COLLECTOR | N-CHANNEL | Single | 40A | 1.2kV | 2.5V | POWER CONTROL | SILICON | 2.5V | 66 ns | 2.5V @ 15V, 20A | 1530 ns | PT | 20V | 1200V | 5V | 960V, 20A, 10 Ω, 15V | 50nC | 120A | 16ns/290ns | 2.85mJ (on), 6.47mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBF20N360 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | BIMOSFET™ | Active | 1 (Unlimited) | ROHS3 Compliant | i4-Pac™-5 | unknown | Through Hole | -55°C~150°C TJ | Standard | 230W | 230W | 1.7 μs | 45A | 3.6kV | 3.4V | 3.4V @ 15V, 20A | 3600V | 1500V, 20A, 10 Ω, 15V | 43nC | 220A | 18ns/238ns | 15.5mJ (on), 4.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXK200N60C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~175°C TJ | Standard | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 1.63kW | 1630W | 1 | COLLECTOR | N-CHANNEL | Single | 1.63kW | 340A | 600V | 2.1V | POWER CONTROL | SILICON | 1.6V | 143 ns | 2.1V @ 15V, 100A | 240 ns | PT | 20V | 6V | 360V, 100A, 1 Ω, 15V | 315nC | 900A | 47ns/125ns | 3mJ (on), 1.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN200N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Tube | 2016 | Active | 1 (Unlimited) | ROHS3 Compliant | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | Standard | 1250W | 133ns | 2.6V @ 15V, 100A | 1700V | 280A | 850V, 100A, 1 Ω, 15V | 540nC | 1050A | 37ns/320ns | 28mJ (on), 30mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGT32N170-TRL | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~150°C TJ | Standard | IXG*32N170 | 350W | 3.3V @ 15V, 32A | NPT | 1700V | 75A | 1020V, 32A, 2.7 Ω, 15V | 155nC | 200A | 45ns/270ns | 11mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYP20N120C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | 10.66mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-220-3 | unknown | 16mm | 4.82mm | Through Hole | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXY*20N120 | Insulated Gate BIP Transistors | 278W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 278W | 40A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 4V | 60 ns | 3.4V @ 15V, 20A | 220 ns | 20V | 1200V | 5V | 600V, 20A, 10 Ω, 15V | 53nC | 96A | 20ns/90ns | 1.3mJ (on), 500μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH60N60C3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*60N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 380W | 380W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 21 ns | 25 ns | 75A | 600V | 2.5V | POWER CONTROL | 70 ns | SILICON | 64 ns | 2.5V @ 15V, 40A | 226 ns | PT | 20V | 5V | 95ns | 480V, 40A, 3 Ω, 15V | 115nC | 300A | 21ns/70ns | 800μJ (on), 450μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH48N60C3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*48N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 25ns | 75A | 600V | 600V | POWER CONTROL | SILICON | 1.96nF | 2.5V | 45 ns | 2.5V @ 15V, 30A | 187 ns | PT | 20V | 5.5V | 400V, 30A, 3 Ω, 15V | 77nC | 250A | 19ns/60ns | 410μJ (on), 230μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBT2N250 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2009 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | LOW CONDUCTION LOSS | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | 32W | 32W | 1 | COLLECTOR | N-CHANNEL | Single | 920 ns | 5A | 2.5kV | 2.5kV | POWER CONTROL | SILICON | 310 ns | 3.5V @ 15V, 2A | 252 ns | 20V | 2500V | 5.5V | 10.6nC | 13A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBH10N300HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2015 | BIMOSFET™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | Surface Mount | -55°C~150°C TJ | Standard | 180W | 180W | 1.6 μs | 34A | 3kV | 2.8V | 2.8V @ 15V, 10A | 3000V | 960V, 10A, 10 Ω, 15V | 46nC | 88A | 36ns/100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBT12N300 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2012 | BIMOSFET™ | yes | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 160W | 160W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 1.4 μs | 30A | 3kV | 3.2V | POWER CONTROL | SILICON | 460 ns | 3.2V @ 15V, 12A | 705 ns | 20V | 3000V | 5V | 62nC | 100A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH40N120B3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 480W | 480W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 22 ns | 100 ns | 86A | 1.2kV | 2.9V | POWER CONTROL | 177 ns | SILICON | 84 ns | 2.9V @ 15V, 40A | 411 ns | 20V | 1200V | 5V | 600V, 40A, 10 Ω, 15V | 87nC | 180A | 22ns/177ns | 2.7mJ (on), 1.6mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH16N170CV1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Tube | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | 310W | 150ns | 3.8V @ 15V, 16A | 1700V | 40A | 850V, 16A, 10 Ω, 15V | 56nC | 100A | 11ns/140ns | 2.1mJ (on), 1.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGF30N400 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | UL RECOGNIZED | i4-Pac™-5 (3 Leads) | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 160W | 160W | 1 | ISOLATED | N-CHANNEL | Single | 30A | 4kV | 4kV | GENERAL PURPOSE SWITCHING | SILICON | 201 ns | 5.2V @ 15V, 90A | 724 ns | 20V | 4000V | 5V | 135nC | 360A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG30C400PB | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2004 | HiPerFRED™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | TO-220-3 | No SVHC | Through Hole | 2.299997g | 8541.10.00.80 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Rectifier Diodes | Not Qualified | 90W | SILICON | 2 | Standard | FAST SOFT RECOVERY | 1 | TO-220AB | 15A | 1.08V | 190A | Common Cathode | 180μA | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 400V | 1.39V @ 15A | -55°C~175°C | 400V | 15A | 400V | 1 Pair Common Cathode | 150A | 45 ns | 45 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSSK70-008A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Radial, Through Hole | Tube | 2000 | yes | Active | Not Applicable | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | No | 3 | TO-3P-3 Full Pack | No SVHC | Through Hole | 8541.10.00.80 | SINGLE | 3 | Rectifier Diodes | SILICON | 2 | Schottky | POWER | 1 | TO-247AD | 35A | 770mV | 600A | Common Cathode | 4mA | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 80V | 770mV @ 35A | -55°C~175°C | 80V | 35A | 80V | 600A | 1 Pair Common Cathode | 600A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS2X61-0045A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount, Panel, Screw | Tube | 2000 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 150°C | -40°C | 38.2mm | ROHS3 Compliant | Lead Free | No | 4 | SOT-227-4, miniBLOC | No SVHC | 9.6mm | 25.07mm | Chassis Mount | 45V | Nickel (Ni) | UPPER | UNSPECIFIED | DSS2X | 4 | Other Diodes | 150W | SILICON | 2 | Schottky | POWER | 1 | 60A | 940mV | ISOLATED | 800A | 2mA | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 45V | 740mV @ 60A | 45V | 60A | 2mA | 45V | 800A | 2 Independent | 800A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI2X30-12B | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount, Panel, Screw | Tube | 2000 | Active | 1 (Unlimited) | 150°C | -40°C | 38.23mm | ROHS3 Compliant | Lead Free | 8 | SOT-227-4, miniBLOC | No SVHC | 9.6mm | 25.42mm | Chassis Mount | DSEI2X | Standard | 28A | 2.55V | 210A | Dual | SOT-227B | Fast Recovery =< 500ns, > 200mA (Io) | 750μA @ 1200V | 2.55V @ 30A | 1.2kV | 28A | 750μA | 1.2kV | 210A | 2 Independent | 210A | 1200V | 28A | 60 ns | 1.2kV | 60 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI2X30-04C | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount, Panel, Screw | Tube | 2000 | Active | 1 (Unlimited) | 150°C | -40°C | 38.23mm | ROHS3 Compliant | Lead Free | No | 8 | SOT-227-4, miniBLOC | No SVHC | 9.6mm | 25.42mm | Chassis Mount | DSEI2X | Standard | 30A | 1.6V | 320A | SOT-227B | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 400V | 1.6V @ 30A | 400V | 30A | 100μA | 400V | 320A | 2 Independent | 320A | 400V | 30A | 50 ns | 400V | 50 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSI2X55-16A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount, Screw | Tube | 2000 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Lead Free | No | 4 | HIGH RELIABILITY | SOT-227-4, miniBLOC | Chassis Mount | 38.000013g | AVALANCHE | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | Other Diodes | SILICON | 2 | Standard | GENERAL PURPOSE | 1 | 650A | 1.2V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | 300μA @ 1600V | 1.2V @ 60A | 1.6kV | 56A | 300μA | 1.6kV | 700A | 2 Independent | 1600V | 190W | 1.6kV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEE55-24N1F | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 32 Weeks | Radial, Through Hole | Tube | 2011 | HiPerFRED™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, UL RECOGNIZED | i4-Pac™-3 | No SVHC | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Rectifier Diodes | Not Qualified | SILICON | 2 | Standard | FAST SOFT RECOVERY | 1 | 53A | 2.9V | ISOLATED | 800A | Dual | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 1200V | 2.45V @ 60A | -55°C~175°C | 1.2kV | 60A | 1mA | 800A | 1 Pair Series Connection | 1200V | 220 ns | 2.4kV | 90 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA120C150QB | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2006 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | 3 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE | TO-3P-3, SC-65-3 | No SVHC | Through Hole | 8541.10.00.80 | e3 | PURE TIN | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Rectifier Diodes | Not Qualified | SILICON | 2 | Schottky | SOFT RECOVERY | 1 | 60A | 800mV | 600A | Common Cathode | 375kW | 2mA | Fast Recovery =< 500ns, > 200mA (Io) | 1.8mA @ 150V | 930mV @ 60A | -55°C~175°C | 150V | 60A | 1.8mA | 150V | 600A | 1 Pair Common Cathode | 600A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEC60-12A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Radial, Through Hole | Tube | 2006 | HiPerFRED™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | 3 | SNUBBER DIODE, FREE WHEELING DIODE | TO-3P-3 Full Pack | No SVHC | unknown | Through Hole | AVALANCHE | 8541.10.00.80 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Rectifier Diodes | Not Qualified | SILICON | 2 | Standard | SOFT RECOVERY | 1 | TO-247AD | 30A | 1.78V | 200A | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1200V | 2.74V @ 30A | -55°C~175°C | 1.2kV | 30A | 250μA | 1.2kV | 200A | 1 Pair Common Cathode | 1200V | 40 ns | 170W | 1.2kV | 40 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP2X61-03A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount, Screw | Tube | 2000 | HiPerFRED™ | Active | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | Lead Free | No | 4 | SOT-227-4, miniBLOC | No SVHC | Chassis Mount | DSEP2X | Standard | 60A | 1.68V | 600A | SOT-227B | Fast Recovery =< 500ns, > 200mA (Io) | 650μA @ 300V | 1.68V @ 60A | 300V | 60A | 650μA | 300V | 600A | 2 Independent | 300V | 60A | 30 ns | 300V | 30 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDD26-18N1B | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Chassis Mount, Screw | Bulk | 2000 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | ROHS3 Compliant | 3 | TO-240AA | Chassis Mount | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MDD26 | 3 | Rectifier Diodes | Not Qualified | SILICON | 2 | Standard | GENERAL PURPOSE | 1 | 650A | 1.38V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 1800V | 1.38V @ 80A | 1.8kV | 36A | 700A | 1 Pair Series Connection | 1800V | 1.8kV |