Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Diode Element Material | Number of Elements | Diode Type | Application | Number of Phases | JEDEC-95 Code | Output Current | Polarity | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Max Surge Current | Element Configuration | Turn On Delay Time | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Configuration | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Reverse Recovery Time | Reverse Voltage (DC) | Recovery Time | Reverse Test Voltage | Max Collector Current | Reverse Recovery Time-Max | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
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APTDF400KK120G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Bulk | 2009 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -40°C | RoHS Compliant | No | 4 | LP4 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 3 | R-XUFM-X3 | Rectifier Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY POWER | 1 | 470A | 3V | ISOLATED | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1200V | 3V @ 400A | 1.2kV | 470A | 250μA | 1.2kV | 3kA | 1 Pair Common Cathode | 1200V | 385 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT2X101S20J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | 1997 | no | Active | 1 (Unlimited) | 4 | EAR99 | 150°C | -55°C | 38.2mm | RoHS Compliant | Lead Free | 120A | No | 4 | ISOTOP | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | 200V | UPPER | UNSPECIFIED | 4 | SILICON | 2 | Schottky | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | 1 | 120A | 890mV | ISOLATED | Dual | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 200V | 950mV @ 100A | -55°C~175°C | 200V | 120A | 200μA | 200V | 1kA | 2 Independent | 1kA | 70 ns | 200V | |||||||||||||||||||||||||||||||||||||||||||||||||||
APT2X101DQ120J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Chassis Mount, Screw | Tube | 1997 | yes | Active | 1 (Unlimited) | 4 | 175°C | -55°C | 38.2mm | RoHS Compliant | Lead Free | 100A | No | 4 | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | 1.2kV | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Other Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 100A | 3V | ISOLATED | 1kA | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1200V | 3V @ 100A | -55°C~175°C | 1.2kV | 100A | 100μA | 1.2kV | 1kA | 2 Independent | 1200V | 385 ns | 1.2kV | 385 ns | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||
APT30DQ60BHBG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Tube | yes | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | RoHS Compliant | Lead Free | No | TO-247-3 | Through Hole | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | APT30DQ60 | 3 | R-PSFM-T3 | Rectifier Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | TO-247AD | 30A | 2.4V | Standard Recovery >500ns, > 200mA (Io) | 2.4V @ 30A | -55°C~175°C | 600V | 30A | 25μA | 600V | 320A | 1 Pair Series Connection | 0.03μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT2X101D100J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | 1997 | yes | Active | 1 (Unlimited) | 4 | 175°C | -55°C | 38.2mm | RoHS Compliant | Lead Free | 95A | No | 4 | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | 1kV | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Other Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 95A | 2.5V | ISOLATED | 1kA | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1000V | 2.5V @ 100A | -55°C~175°C | 1kV | 95A | 250μA | 1kV | 1kA | 2 Independent | 1000V | 300 ns | 1kV | 43 ns | 1000V | |||||||||||||||||||||||||||||||||||||||||||||||
APT2X101D120J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Chassis Mount, Screw | Tube | 1997 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 175°C | -55°C | 38.2mm | RoHS Compliant | Lead Free | 93A | No | 4 | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | 1.2kV | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Other Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 93A | 2.5V | ISOLATED | 1kA | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1200V | 2.5V @ 100A | -55°C~175°C | 1.2kV | 93A | 250μA | 1.2kV | 1kA | 2 Independent | 1200V | 420 ns | 1.2kV | 420 ns | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||
APT40DQ60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 3 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 40A | No | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 600V | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 40A | 40A | 2V | CATHODE | 320A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 25μA @ 600V | 2.4V @ 40A | -55°C~175°C | 600V | 40A | 25μA | 600V | 320A | 25 ns | 600V | 22 ns | |||||||||||||||||||||||||||||||||||||||||||||||||
APT75DQ120BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 75A | No | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 1.2kV | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 75A | 75A | 3.48V | CATHODE | 540A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1200V | 3.1V @ 75A | -55°C~175°C | 1.2kV | 75A | 100μA | 1.2kV | 540A | 1200V | 325 ns | 1.2kV | 325 ns | ||||||||||||||||||||||||||||||||||||||||||||||||
UPS840E3/TR13 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Tape & Reel (TR) | 1997 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 125°C | -55°C | 4.43mm | RoHS Compliant | Lead Free | 8A | No | 3 | HIGH RELIABILITY | Powermite®3 | 1.14mm | 4.09mm | Surface Mount | 40V | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | UPS840 | 3 | R-PSSO-G2 | SILICON | 1 | Schottky | GENERAL PURPOSE | 1 | 8A | Standard | 8A | 450mV | CATHODE | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 40V | 450mV @ 8A | -55°C~125°C | 40V | 8A | 5mA | 40V | 150A | 150A | 40V | ||||||||||||||||||||||||||||||||||||||||||||||
APT20GN60BDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 40A | No | TO-247-3 | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 136W | 1 | COLLECTOR | N-CHANNEL | Single | 40A | 600V | 600V | POWER CONTROL | SILICON | 19 ns | 1.9V @ 15V, 20A | 290 ns | Trench Field Stop | 30V | 6.5V | 400V, 20A, 4.3 Ω, 15V | 120nC | 60A | 9ns/140ns | 230μJ (on), 580μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT80GP60B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | POWER MOS 7® | Active | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Lead Free | 100A | No | 3 | TO-247-3 Variant | Through Hole | 600V | Standard | 1041W | Single | T-MAX™ [B2] | 100A | 600V | 2.7V @ 15V, 80A | PT | 600V | 100A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT70GR65B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 595W | 595W | 134A | 650V | 2.4V | 2.4V @ 15V, 70A | NPT | 433V, 70A, 4.3 Ω, 15V | 305nC | 260A | 19ns/170ns | 1.51mJ (on), 1.46mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT54GA60BD30 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Pure Matte Tin (Sn) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 416W | 416W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 96A | 600V | 600V | POWER CONTROL | SILICON | 37 ns | 2.5V @ 15V, 32A | 291 ns | PT | 30V | 6V | 400V, 32A, 4.7 Ω, 15V | 28nC | 161A | 17ns/112ns | 534μJ (on), 466μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT40GR120S | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 500W | 500W | N-CHANNEL | 88A | 1.2kV | 3.2V | 3.2V @ 15V, 40A | NPT | 30V | 1200V | 6V | 600V, 40A, 4.3 Ω, 15V | 210nC | 160A | 22ns/163ns | 1.38mJ (on), 906μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT100GN60B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 229A | No | 3 | HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | Insulated Gate BIP Transistors | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 229A | 600V | 600V | POWER CONTROL | SILICON | 96 ns | 1.85V @ 15V, 100A | 435 ns | Trench Field Stop | 6.5V | 400V, 100A, 1 Ω, 15V | 600nC | 300A | 31ns/310ns | 4.7mJ (on), 2.675mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GR120L | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 694W | 694W | N-CHANNEL | 117A | 1.2kV | 3.2V | 3.2V @ 15V, 50A | NPT | 30V | 1200V | 6.5V | 600V, 50A, 4.3 Ω, 15V | 445nC | 200A | 28ns/237ns | 2.14mJ (on), 1.48mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT15GT120BRDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | 21.46mm | RoHS Compliant | Contains Lead | 36A | No | HIGH SPEED | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 36A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.2V | 21 ns | 3.6V @ 15V, 15A | 137 ns | NPT | 30V | 1200V | 36A | 6.5V | 800V, 15A, 5 Ω, 15V | 105nC | 45A | 10ns/85ns | 585μJ (on), 260μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
APT35GA90B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 32 Weeks | Through Hole | Tube | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 290W | 290W | 1 | COLLECTOR | N-CHANNEL | Single | 63A | 900V | 900V | POWER CONTROL | SILICON | 25 ns | 3.1V @ 15V, 18A | 298 ns | PT | 600V, 18A, 10 Ω, 15V | 84nC | 105A | 12ns/104ns | 642μJ (on), 382μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT15GP60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 56A | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 56A | 600V | 600V | POWER CONTROL | SILICON | 20 ns | 2.7V @ 15V, 15A | 157 ns | PT | 400V, 15A, 5 Ω, 15V | 55nC | 65A | 8ns/29ns | 130μJ (on), 121μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT30GT60BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 64A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 64A | 600V | 600V | POWER CONTROL | SILICON | 2V | 32 ns | 2.5V @ 15V, 30A | 345 ns | NPT | 30V | 64A | 5V | 400V, 30A, 10 Ω, 15V | 145nC | 110A | 12ns/225ns | 525μJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
APT45GR65BSCD10 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
22 Weeks | Through Hole | Bulk | 2001 | Obsolete | 1 (Unlimited) | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 543W | 543W | N-CHANNEL | 80 ns | 118A | 650V | 2.4V | 2.4V @ 15V, 45A | NPT | 30V | 6.5V | 433V, 45A, 4.3 Ω, 15V | 203nC | 224A | 15ns/100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT40GP60B2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Through Hole | Tube | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 40A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 543W | 543W | 1 | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 600V | POWER CONTROL | SILICON | 49 ns | 2.7V @ 15V, 40A | 160 ns | PT | 20V | 6V | 400V, 40A, 5 Ω, 15V | 135nC | 160A | 20ns/64ns | 385μJ (on), 350μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT70GR120L | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 961W | 961W | N-CHANNEL | Single | 160A | 1.2kV | 3.2V | 3.2V @ 15V, 70A | NPT | 30V | 1200V | 6.5V | 600V, 70A, 4.3 Ω, 15V | 544nC | 280A | 33ns/278ns | 3.82mJ (on), 2.58mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GP60B2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 150A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | Insulated Gate BIP Transistors | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 150A | 600V | 600V | POWER CONTROL | SILICON | 55 ns | 2.7V @ 15V, 50A | 200 ns | PT | 6V | 400V, 50A, 4.3 Ω, 15V | 165nC | 190A | 19ns/85ns | 465μJ (on), 635μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT80GA90LD40 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 25 ns | 145A | 900V | 900V | POWER CONTROL | 49 ns | 3.1V @ 15V, 47A | 320 ns | PT | 600V, 47A, 4.7 Ω, 15V | 200nC | 239A | 18ns/149ns | 1652μJ (on), 1389μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT65GP60L2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 198A | No | 3 | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 833W | 1 | COLLECTOR | N-CHANNEL | Single | 198A | 600V | 600V | POWER CONTROL | SILICON | 85 ns | 2.7V @ 15V, 65A | 220 ns | PT | 6V | 400V, 65A, 5 Ω, 15V | 210nC | 250A | 30ns/90ns | 605μJ (on), 895μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT35GP120B2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 96A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 543W | 1 | COLLECTOR | N-CHANNEL | Single | 96A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 36 ns | 3.9V @ 15V, 35A | 220 ns | PT | 1200V | 6V | 600V, 35A, 4.3 Ω, 15V | 150nC | 140A | 16ns/95ns | 750μJ (on), 680μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GT60BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 110A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 446W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 110A | 600V | 600V | POWER CONTROL | SILICON | 46 ns | 2.5V @ 15V, 50A | 365 ns | NPT | 400V, 50A, 4.3 Ω, 15V | 240nC | 150A | 14ns/240ns | 995μJ (on), 1070μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GN120L2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 26.49mm | RoHS Compliant | Lead Free | 134A | No | 3 | HIGH RELIABILITY | TO-264-3, TO-264AA | 5.21mm | 20.5mm | Through Hole | 10.6g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 543W | 1 | COLLECTOR | N-CHANNEL | Single | 28 ns | 134A | 1.2kV | 1.2kV | POWER CONTROL | 320 ns | SILICON | 1.7V | 55 ns | 2.1V @ 15V, 50A | 600 ns | NPT, Trench Field Stop | 1200V | 134A | 6.5V | 800V, 50A, 2.2 Ω, 15V | 315nC | 150A | 28ns/320ns | 4495μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
APT35GN120BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 94A | HIGH RELIABILITY | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 379W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 94A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 1.7V | 46 ns | 2.1V @ 15V, 35A | 465 ns | NPT, Trench Field Stop | 30V | 1200V | 94A | 6.5V | 800V, 35A, 2.2 Ω, 15V | 220nC | 105A | 24ns/300ns | 2.315mJ (off) |
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