Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Max Power Dissipation | Power - Max | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Feature | Polarity | Analog IC - Other Type | Case Connection | Polarity/Channel Type | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Applications | Element Configuration | Power Dissipation | Output | Turn On Delay Time | Supplier Device Package | Power Dissipation-Max | Max Collector Current | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Transistor Type | Turn On Time-Max (ton) | Transition Frequency | Collector-Emitter Voltage-Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Turn Off Time-Max (toff) | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Supply Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Voltage - Supply, Single (V+) | Multiplexer/Demultiplexer Circuit |
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JANS2N4150 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/394 | Discontinued | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AA, TO-5-3 Metal Can | Through Hole | -65°C~200°C TJ | 8541.29.00.95 | e0 | TIN LEAD | BOTTOM | WIRE | 3 | Qualified | 1W | 1 | SINGLE | COLLECTOR | NPN | 10A | 70V | SWITCHING | SILICON | NPN | 550ns | 2000ns | 10μA | 10A | 100V | 40 @ 5A 5V | 2.5V @ 1A, 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JAN2N3420 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/393 | no | Discontinued | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 3 | Qualified | 1W | 1 | SINGLE | TO-5 | COLLECTOR | NPN | 1W | 3A | 60V | SWITCHING | SILICON | NPN | 5μA | 85V | 8V | 40 @ 1A 2V | 500mV @ 200mA, 2A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N3635UB | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 2007 | Military, MIL-PRF-19500/357 | no | Discontinued | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | 3-SMD, No Lead | Surface Mount | -65°C~200°C TJ | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | DUAL | 3 | Other Transistors | Qualified | 1W | 1.5W | 1 | SINGLE | PNP | 1A | 140V | SWITCHING | SILICON | PNP | 200ns | 650ns | 10μA | 140V | 100 @ 50mA 10V | 600mV @ 5mA, 50mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV2N3635UB | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 2007 | Military, MIL-PRF-19500/357 | no | Discontinued | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | 3-SMD, No Lead | Surface Mount | -65°C~200°C TJ | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | DUAL | 3 | Other Transistors | Qualified | 1W | 1.5W | 1 | SINGLE | PNP | 1A | 140V | SWITCHING | SILICON | PNP | 200ns | 650ns | 10μA | 140V | 100 @ 50mA 10V | 600mV @ 5mA, 50mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N4033UB | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | no | Discontinued | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | 3-SMD, No Lead | Surface Mount | -65°C~200°C TJ | e0 | TIN LEAD | DUAL | 3 | 500mW | 1 | SINGLE | PNP | 500mW | 1A | 80V | SWITCHING | SILICON | PNP | 40ns | 10μA ICBO | 80V | 5V | 100 @ 100mA 5V | 1V @ 100mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N3996 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Stud | Bulk | 2007 | Military, MIL-PRF-19500/374 | no | Discontinued | 1 (Unlimited) | 4 | EAR99 | Non-RoHS Compliant | No | 4 | TO-111-4, Stud | Chassis, Stud Mount | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | UPPER | UNSPECIFIED | 4 | Qualified | 2W | 1 | SINGLE | ISOLATED | NPN | 5A | 80V | SWITCHING | SILICON | NPN | 10μA | 10A | 100V | 40 @ 1A 2V | 2V @ 500mA, 5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N2904 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/290 | no | Discontinued | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 2 | Other Transistors | Qualified | 600mW | 800mW | 1 | SINGLE | COLLECTOR | PNP | 600mW | 600mA | 40V | SWITCHING | SILICON | PNP | 45ns | 200MHz | 1μA | 60V | 5V | 40 @ 150mA 10V | 1.6V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N5578 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
no | Discontinued | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | TO-66 | e0 | TIN LEAD | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | NO | O-MBFM-P2 | Not Qualified | 1 | SINGLE | TO-3 | COLLECTOR | NPN | 60A | 10 | SILICON | 0.4MHz | 70V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3778 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | Through Hole | Bulk | 2007 | no | Discontinued | 1 (Unlimited) | 3 | EAR99 | 125°C | -55°C | Non-RoHS Compliant | No | 3 | TO-205AA, TO-5-3 Metal Can | Through Hole | 8541.29.00.95 | e0 | TIN LEAD | BOTTOM | WIRE | 5W | PNP | 10 | 1A | 40V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N1486 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/180 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-233AA, TO-8-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 3 | Qualified | 1.75W | 1 | SINGLE | COLLECTOR | NPN | 1.75W | 3A | 55V | SILICON | NPN | 1.25MHz | 15μA | 100V | 12V | 35 @ 750mA 4V | 750mV @ 40mA, 750mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV2N6052 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | Military, MIL-PRF-19500/501 | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | TO-204AA, TO-3 | Through Hole | -55°C~175°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBFM-P2 | Qualified | 150W | 1 | PNP | COLLECTOR | Single | 100V | AMPLIFIER | SILICON | PNP - Darlington | 1mA | 3V | 12A | 100V | 5V | 1000 @ 6A 3V | 3V @ 120mA, 12A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6251 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | no | Active | 2 | 200°C | -55°C | Non-RoHS Compliant | Lead, Tin | TO-3 | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBFM-P2 | Not Qualified | 6W | 1 | SINGLE | TO-204AA | NPN | COLLECTOR | 6 | 6W | 10A | 350V | 450V | 6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSC3340XJJ | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tray | 2007 | Obsolete | 4 (72 Hours) | 100°C | -40°C | RoHS Compliant | 484-BBGA, FCBGA | Surface Mount | 40 | Advanced Signal Equalization | Backplane, PCIe, Telecommunications, Video | Single | 2.5V | 40:40 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSC3303XHV | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tray | 2009 | Obsolete | 4 (72 Hours) | RoHS Compliant | 36-LBGA, FCBGA | Surface Mount | -40°C~110°C TA | 4 | Advanced Signal Equalization | Backplane, Cable Interconnect | Single | 1.8V~3.3V | 4:4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSC3303XHV-01 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tray | 2009 | Obsolete | 4 (72 Hours) | 110°C | -40°C | RoHS Compliant | 36-LBGA, FCBGA | Surface Mount | -40°C~110°C TA | 4 | Advanced Signal Equalization | Backplane, Cable Interconnect | 36-FCBGA (7x7) | Single | 1.8V~3.3V | 4:4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSC3108VP-01 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tray | 2003 | Obsolete | 1 (Unlimited) | 69 | 110°C | 0°C | 8mm | RoHS Compliant | 69-FBGA | 8mm | Surface Mount | 1 | BOTTOM | BALL | NOT SPECIFIED | 2.5V | NOT SPECIFIED | OTHER | 0.8mm | S-CBGA-B69 | 1 | Multiplexer or Switches | Not Qualified | 2.5/3.3V | 2.625V | CROSS POINT SWITCH | Backplane, Cable Interconnect | SEPARATE OUTPUT | Single | 2.2V 3.3V | 8:8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSC3312XYP | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tray | 2006 | Obsolete | 4 (72 Hours) | 85°C | -30°C | RoHS Compliant | 196-FCBGA | Surface Mount | 12 | Advanced Signal Equalization | Backplane, Cable Interconnect | Single | 2.5V | 12:12 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT13F120B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 13A | No | AVALANCHE RATED | TO-247-3 | 5.31mm | 16.26mm | 1.2Ohm | Through Hole | 38.000013g | -55°C~150°C TJ | 1.2kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AB | 625W | 26 ns | 625W Tc | 14A | SWITCHING | 85 ns | SILICON | N-Channel | 1.4 Ω @ 7A, 10V | 5V @ 1mA | 4765pF @ 25V | 145nC @ 10V | 15ns | 24 ns | 30V | 14A Tc | 1200V | 50A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT1204R7BFLLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1997 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3.5A | No | TO-247-3 | 25.96mm | Through Hole | -55°C~150°C TJ | 1.2kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | 3 | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | DRAIN | 135W | 7 ns | 135W Tc | 3.5A | 150°C | SWITCHING | 20 ns | SILICON | N-Channel | 4.7 Ω @ 1.75A, 10V | 5V @ 1mA | 715pF @ 25V | 31nC @ 10V | 2ns | 24 ns | 30V | 1.2kV | 3.5A Tc | 1200V | 425 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT34M120J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Chassis Mount, Screw | Tube | 1997 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | 34A | No | 4 | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | 1.2kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | UPPER | UNSPECIFIED | 4 | 1 | 1 | ISOLATED | Single | 960W | 100 ns | 960W Tc | 35A | SWITCHING | 0.29Ohm | 315 ns | SILICON | N-Channel | 300m Ω @ 25A, 10V | 5V @ 2.5mA | 18200pF @ 25V | 560nC @ 10V | 60ns | 90 ns | 30V | 35A Tc | 1200V | 2700 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BLLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 1997 | POWER MOS 7® | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 22A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | DRAIN | 265W | 8 ns | 265W Tc | 22A | SWITCHING | 0.24Ohm | 18 ns | SILICON | N-Channel | 240m Ω @ 11A, 10V | 5V @ 1mA | 1900pF @ 25V | 43nC @ 10V | 6ns | 2 ns | 30V | 22A Tc | 88A | 960 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT43M60B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 1997 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | 21.46mm | RoHS Compliant | Lead Free | 43A | No | AVALANCHE RATED, HIGH RELIABILITY | TO-247-3 Variant | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | SINGLE | 3 | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 780W | 48 ns | 780W Tc | 45A | SWITCHING | 145 ns | SILICON | N-Channel | 150m Ω @ 21A, 10V | 5V @ 2.5mA | 8590pF @ 25V | 215nC @ 10V | 55ns | 44 ns | 30V | 600V | 45A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M11JVR | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | Tube | 1997 | POWER MOS V® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | 175A | No | 4 | HIGH VOLTAGE | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | UPPER | UNSPECIFIED | 4 | 1 | 1 | ISOLATED | Single | 700W | 20 ns | 700W Tc | 175A | SWITCHING | 75 ns | SILICON | N-Channel | 11m Ω @ 500mA, 10V | 4V @ 5mA | 21600pF @ 25V | 180nC @ 10V | 40ns | 10 ns | 30V | 200V | 175A Tc | 700A | 3600 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20M11JVFR | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount, Screw | Tube | 1997 | POWER MOS V® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | 175A | No | 4 | FREDFET | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 1 | ISOLATED | Single | 700W | 20 ns | 700W Tc | 175A | SWITCHING | 75 ns | SILICON | N-Channel | 11m Ω @ 500mA, 10V | 4V @ 5mA | 21600pF @ 25V | 180nC @ 10V | 40ns | 10 ns | 30V | 175A Tc | 700A | 3600 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50M65B2FLLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 1997 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 67A | No | 3 | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 694W | 12 ns | 694W Tc | 67A | SWITCHING | 0.065Ohm | 29 ns | SILICON | N-Channel | 65m Ω @ 33.5A, 10V | 5V @ 2.5mA | 7010pF @ 25V | 141nC @ 10V | 28ns | 30 ns | 30V | 67A Tc | 268A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APL602J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Chassis Mount, Screw | Tube | 1997 | Active | 1 (Unlimited) | 4 | 38.2mm | RoHS Compliant | Lead Free | 43A | No | 4 | UL RECOGNIZED | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 1 | ISOLATED | Single | 565W | 13 ns | 565W Tc | 43A | AMPLIFIER | 58 ns | SILICON | N-Channel | 125m Ω @ 21.5A, 12V | 4V @ 2.5mA | 9000pF @ 25V | 24ns | 14 ns | 30V | 600V | 43A Tc | 3000 mJ | 12V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N7227 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/592 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | AVALANCHE RATED | TO-254-3, TO-254AA (Straight Leads) | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e0 | Tin/Lead (Sn/Pb) | SINGLE | PIN/PEG | 3 | S-MSFM-P3 | FET General Purpose Powers | Qualified | 1 | SINGLE | ISOLATED | 4W | 4W Ta 150W Tc | 14A | SWITCHING | 400V | SILICON | N-Channel | 415m Ω @ 14A, 10V | 4V @ 250μA | 110nC @ 10V | 20V | 14A Tc | 400V | 56A | 700 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N6758 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/542 | no | Obsolete | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | TO-204AA, TO-3 | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBFM-P2 | Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 75W | 4W Ta 75W Tc | 9A | SWITCHING | 0.49Ohm | 200V | SILICON | N-Channel | 490m Ω @ 9A, 10V | 4V @ 250μA | 39nC @ 10V | 85ns | 20V | 9A | 9A Tc | 200V | 36A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JAN2N6782 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | Military, MIL-PRF-19500/556 | no | Obsolete | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | 3 | TO-205AF Metal Can | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | Qualified | MIL-19500 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 800mW Ta 15W Tc | 3.5A | SWITCHING | 0.6Ohm | 100V | SILICON | N-Channel | 610m Ω @ 3.5A, 10V | 4V @ 250μA | 8.1nC @ 10V | 20V | 3.5A Tc | 100V | 14A | 40ns | 10V | ±20V | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N7228 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/592 | no | Obsolete | 1 (Unlimited) | 3 | Non-RoHS Compliant | No | AVALANCHE RATED | TO-254-3, TO-254AA (Straight Leads) | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e0 | Tin/Lead (Sn/Pb) | SINGLE | PIN/PEG | 3 | S-MSFM-P3 | FET General Purpose Powers | Qualified | 1 | SINGLE | ISOLATED | 4W | 4W Ta 150W Tc | 12A | SWITCHING | 500V | SILICON | N-Channel | 515m Ω @ 12A, 10V | 4V @ 250μA | 120nC @ 10V | 20V | 12A Tc | 500V | 48A | 750 mJ | 10V | ±20V |
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