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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Height | Mounting Type | Operating Temperature | Voltage - Rated DC | Input Type | Capacitance | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Output Current | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Element Configuration | Turn On Delay Time | Supplier Device Package | Input | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage | Forward Voltage-Max | Max Collector Current | Reverse Recovery Time-Max | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Capacitance @ Vr, F | Max Junction Temperature (Tj) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Input Capacitance | Current - Collector Cutoff (Max) | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT95GR65B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 35 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 892W | 892W | T-MAX™ [B2] | 208A | 650V | 2.4V | 2.4V @ 15V, 95A | NPT | 650V | 208A | 433V, 95A, 4.3Ohm, 15V | 420nC | 400A | 29ns/226ns | 3.12mJ (on), 2.55mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N4148UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1999 | Military, MIL-PRF-19500/116 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | DO-213AA (Glass) | 1.7mm | Surface Mount | 4pF | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | Qualified | MIL-19500/116L | SILICON | 1 | Standard | 200mA | 1.2V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | 75V | 200mA | 500nA | 75V | 2A | 2A | 20 ns | 100V | 4pF @ 0V 1MHz | 175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6643US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/578 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | 2 | METALLURGICALLY BONDED | SQ-MELF, D | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500/578E | SILICON | 1 | Standard | 0.3A | 300mA | 1.2V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50nA @ 20V | 1.2V @ 100mA | -65°C~175°C | 50V | 2.5A | 125V | 0.5μA | 6ns | 5pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4608 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1998 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | TIN LEAD | WIRE | SILICON | 1 | Standard | 200mA | 1.1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 100μA @ 50V | 1.1V @ 400mA | -65°C~150°C | 85V | 200mA | 100μA | 85V | 1A | 10 ns | 0.5W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MC5616 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY | S, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | SILICON | 1 | Standard | 0.57A | 3000V | 570mA | 6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 3000V | 6V @ 100mA | -65°C~150°C | 1μA | 3kV | 4A | 3000V | 300 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5420 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/411 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/411L | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | 600V | 3A | 1μA | 600V | 80A | 250 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS1N5418 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | Military, MIL-PRF-19500/411 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/411L | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 400V | 1.5V @ 9A | -65°C~175°C | 1μA | 400V | 80A | 3A | 150 ns | 165pF @ 4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5552US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/420 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | SQ-MELF, B | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | 20 | 2 | Qualified | SILICON | 1 | Standard | 3A | POWER | 1 | 5A | 1.2V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 600V | 1.2V @ 9A | -65°C~175°C | 1μA | 600V | 100A | 2 μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UES702 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Chassis, Stud | Bulk | 1997 | no | Discontinued | Not Applicable | 1 | EAR99 | 150°C | -55°C | RoHS Compliant | Lead Free | 25A | No | 2 | DO-203AA, DO-4, Stud | Chassis, Stud Mount | 100V | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Standard | EFFICIENCY | 1 | 25A | 25A | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 100V | 950mV @ 25A | -55°C~175°C | 100V | 25A | 20μA | 100V | 400A | 35 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBR6030L | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Stud | Bulk | no | Active | 1 (Unlimited) | 1 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | REVERSE ENERGY TESTED | DO-203AB, DO-5, Stud | Stud Mount | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Schottky | GENERAL PURPOSE | 1 | 60A | 480mV | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 30V | 480mV @ 60A | -65°C~150°C | 30V | 60A | 5mA | 30V | 1.2kA | 60A DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N1124A | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 1997 | no | Active | 1 | Non-RoHS Compliant | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | 1 | NO | O-MUPM-D1 | 200°C | Rectifier Diodes | Not Qualified | MIL-19500/260G | SILICON | 1 | SINGLE | RECTIFIER DIODE | 3.3A | POWER | 1 | 200V | DO-203AA | 25A | CATHODE | 1.2V | 0.5μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ75H120T3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Through Hole | 2012 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 1 | SP1 | Through Hole | -40°C~175°C TJ | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 385W | 385W | 1 | Full Bridge | 30 ns | Standard | 130A | 1.2kV | 2.4V | 290 ns | 4.4nF | 50μA | 2.4V @ 15V, 75A | Trench Field Stop | Yes | 20V | 4.4nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50A170TG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | No | 4 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 12 | R-XUFM-X12 | 312W | 312W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 75A | 1.7kV | 2.4V | POWER CONTROL | SILICON | 4.4nF | 250μA | 450 ns | 2.4V @ 15V, 50A | 1100 ns | Trench Field Stop | Yes | 4.4nF @ 25V | 1700V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50DH120TG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 14 | EAR99 | RoHS Compliant | Lead Free | No | 20 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 14 | R-XUFM-X14 | 277W | 277W | 2 | Asymmetrical Bridge | ISOLATED | N-CHANNEL | Dual | 90 ns | Standard | 75A | 1.2kV | 1.2kV | POWER CONTROL | 420 ns | SILICON | 3.6nF | 250μA | 140 ns | 2.1V @ 15V, 50A | 610 ns | Trench Field Stop | Yes | 3.6nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTCV60HM45BT3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | 3 | SP3 | Chassis Mount | -40°C~150°C TJ | Insulated Gate BIP Transistors | 250W | 250W | 1 | Boost Chopper, Full Bridge | Standard | 50A | 600V | 1.9V | 3.15nF | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT30H170T3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 25 | EAR99 | RoHS Compliant | No | 32 | AVALANCHE RATED | SP3 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | 210W | 210W | 4 | Full Bridge Inverter | ISOLATED | N-CHANNEL | Standard | 45A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 2.5nF | 250μA | 170 ns | 2.4V @ 15V, 30A | 850 ns | Trench Field Stop | Yes | 2.5nF @ 25V | 1700V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ100DA120T1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | 2013 | Active | RoHS Compliant | Module | Chassis Mount | -40°C~175°C TJ | 520W | Boost Chopper | SP1 | Standard | 50μA | 2.42V @ 15V, 100A | Trench Field Stop | Yes | 6.15nF @ 25V | 1200V | 170A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGTQ200A65T3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 2012 | Active | RoHS Compliant | Module | Chassis Mount | -40°C~175°C TJ | 483W | Half Bridge | Standard | 200μA | 2.2V @ 15V, 200A | Yes | 12nF @ 25V | 650V | 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100H60TG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 14 | EAR99 | RoHS Compliant | 20 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 14 | R-XUFM-X14 | Insulated Gate BIP Transistors | Not Qualified | 340W | 340W | 4 | Full Bridge Inverter | ISOLATED | N-CHANNEL | Standard | 150A | 600V | 600V | POWER CONTROL | SILICON | 6.1nF | 250μA | 180 ns | 1.9V @ 15V, 100A | 370 ns | Trench Field Stop | Yes | 6.1nF @ 25V | 1.9 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTCV60HM45RT3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 1999 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | 3 | SP3 | Chassis Mount | -40°C~175°C TJ | Insulated Gate BIP Transistors | 250W | 250W | 1 | Full Bridge Inverter | Single Phase Bridge Rectifier | 50A | 600V | 1.9V | 3.15nF | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ400A120T6G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Through Hole | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 6 | SP6 | Through Hole | -40°C~175°C TJ | Insulated Gate BIP Transistors | 1.9kW | 1900W | 1 | Half Bridge | 30 ns | Standard | 700A | 1.2kV | 2.4V | 290 ns | 24.6nF | 200μA | 2.4V @ 15V, 400A | Trench Field Stop | Yes | 20V | 24.6nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT600U120D4G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 2011 | yes | Active | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | 4 | D4 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 4 | 2.5kW | 2500W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 900A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 40nF | 5mA | 400 ns | 2.1V @ 15V, 600A | 830 ns | Trench Field Stop | No | 40nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT400A120G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2012 | yes | Active | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 7 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 7 | 1.785kW | 1785W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 560A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 28nF | 750μA | 340 ns | 2.1V @ 15V, 400A | 620 ns | Trench Field Stop | No | 28nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75SK120TG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | 20 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~150°C TJ | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | R-XUFM-X12 | Not Qualified | 357W | 357W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 110A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 5.34nF | 250μA | 335 ns | 2.1V @ 15V, 75A | 610 ns | Trench Field Stop | Yes | 5.34nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT35H120T3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | yes | Active | 1 (Unlimited) | 25 | EAR99 | RoHS Compliant | No | 3 | AVALANCHE RATED | SP3 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | 208W | 208W | 4 | Full Bridge Inverter | ISOLATED | N-CHANNEL | Standard | 55A | 1.2kV | 2.1V | POWER CONTROL | SILICON | 2.5nF | 250μA | 140 ns | 2.1V @ 15V, 35A | 610 ns | Trench Field Stop | Yes | 2.5nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGTQ50TA65T3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 2012 | Active | RoHS Compliant | Module | Chassis Mount | -40°C~175°C TJ | 125W | Three Phase Inverter | Standard | 50μA | 2.2V @ 15V, 50A | Yes | 3nF @ 25V | 650V | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL40H120T1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 2012 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | No | 12 | SP1 | Chassis Mount | -40°C~175°C TJ | Insulated Gate BIP Transistors | 220W | 220W | 1 | Full Bridge | Standard | 65A | 1.2kV | 1.2kV | 1.95nF | 250μA | 2.25V @ 15V, 35A | Trench Field Stop | Yes | 20V | 1.95nF @ 25V | 2.25 V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50H120T3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 25 | EAR99 | RoHS Compliant | No | 3 | AVALANCHE RATED | SP3 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | 270W | 270W | 4 | Full Bridge Inverter | ISOLATED | N-CHANNEL | Standard | 75A | 1.2kV | 2.1V | POWER CONTROL | SILICON | 3.6nF | 250μA | 140 ns | 2.1V @ 15V, 50A | 610 ns | Trench Field Stop | Yes | 3.6nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT150A60T3AG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2012 | Active | 1 (Unlimited) | 10 | EAR99 | RoHS Compliant | 20 | SP3 | Chassis Mount | -40°C~175°C TJ | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 25 | R-XUFM-X10 | Insulated Gate BIP Transistors | Not Qualified | 600W | 600W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 225A | 600V | 600V | POWER CONTROL | SILICON | 9.2nF | 250μA | 180 ns | 1.9V @ 15V, 150A | 370 ns | Trench Field Stop | Yes | 9.2nF @ 25V | 1.9 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ50TL65T3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | 2012 | Active | RoHS Compliant | Module | Chassis Mount | -40°C~175°C TJ | 175W | Three Level Inverter | Standard | 50μA | 2.3V @ 15V, 50A | Trench Field Stop | Yes | 3.1nF @ 25V | 650V | 70A |