All Products
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RF/IF & RFID
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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Supplier Device Package | Power Dissipation-Max | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Transistor Type | Turn On Time-Max (ton) | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Turn Off Time-Max (toff) | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV2N3811U | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/336 | no | Obsolete | 1 (Unlimited) | 8 | EAR99 | Non-RoHS Compliant | No | 6 | TO-78-6 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | O-MBCY-W8 | Other Transistors | 350mW | 2 | PNP | 350mW | 50mA | 60V | 60V | SILICON | 2 PNP (Dual) | 10μA ICBO | 60V | 5V | 300 @ 1mA 5V | 250mV @ 100μA, 1mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N2920U | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
23 Weeks | Surface Mount | Bulk | 2007 | Military, MIL-PRF-19500/355 | no | Discontinued | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | Contains Lead | No | 6 | 6-SMD, No Lead | Surface Mount | 200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | Other Transistors | Qualified | 350mW | MIL-19500/355 | 2 | TO-78 | NPN | 350mW | 30mA | 60V | SILICON | 2 NPN (Dual) | 10μA ICBO | 70V | 6V | 300 @ 1mA 5V | 300mV @ 100μA, 1mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N2060 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/270 | no | Discontinued | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | No | 6 | TO-78-6 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 8 | Other Transistors | Qualified | 600mW | 2 | NPN | 600mW | 500mA | 60V | SILICON | 2 NPN (Dual) | 60MHz | 10μA ICBO | 100V | 7V | 50 @ 10mA 5V | 300mV @ 5mA, 50mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N5794U | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 2003 | Military, MIL-PRF-19500/495 | no | Active | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | No | 6-SMD, No Lead | Surface Mount | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | 6 | R-XDSO-N6 | Qualified | 600mW | MIL-19500/495D | 2 | TO-78 | NPN | 600mW | 600mA | 40V | SWITCHING | SILICON | 2 NPN (Dual) | 45ns | 310ns | 10μA ICBO | 75V | 6V | 100 @ 150mA 10V | 900mV @ 30mA, 300mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N6990 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 2002 | Military, MIL-PRF-19500/559 | no | Active | 1 (Unlimited) | 14 | EAR99 | Non-RoHS Compliant | Lead, Tin | 14 | 14-Flatpack | Surface Mount | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | DUAL | NOT SPECIFIED | NOT SPECIFIED | 14 | Qualified | 400mW | MIL-19500/559 | 4 | SINGLE | NPN | 400mW | 800mA | 50V | 50V | SWITCHING | SILICON | 4 NPN (Quad) | 35ns | 300ns | 10μA ICBO | 75V | 6V | 100 @ 150mA 10V | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N6988 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 2002 | Military, MIL-PRF-19500/558 | no | Active | 1 (Unlimited) | 14 | EAR99 | Non-RoHS Compliant | Lead, Tin | 14 | 14-Flatpack | Surface Mount | -65°C~200°C TJ | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | DUAL | NOT SPECIFIED | NOT SPECIFIED | 14 | Other Transistors | Qualified | 400mW | 400mW | MIL-19500/558 | 4 | SEPARATE, 4 ELEMENTS | PNP | 600mA | 60V | 1.6V | SWITCHING | SILICON | 4 PNP (Quad) | 45ns | 300ns | 10μA ICBO | 60V | 100 @ 150mA 10V | 1.6V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N2060L | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/270 | no | Active | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | No | 6 | TO-78-6 Metal Can | Through Hole | -65°C~200°C TJ | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 8 | Other Transistors | Qualified | 600mW | 2.12W | MIL-19500/270 | 2 | SEPARATE, 2 ELEMENTS | NPN | 500mA | 60V | SILICON | 2 NPN (Dual) | 10μA ICBO | 500mA | 100V | 50 @ 10mA 5V | 300mV @ 5mA, 50mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N2919L | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
23 Weeks | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/355 | no | Active | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | No | 6 | TO-78-6 Metal Can | Through Hole | 200°C TJ | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 6 | Qualified | 350mW | MIL-19500 | 2 | SEPARATE, 2 ELEMENTS | NPN | 30mA | 60V | SILICON | 2 NPN (Dual) | 10μA ICBO | 30mA | 70V | 150 @ 1mA 5V | 300mV @ 100μA, 1mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N3501 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/366 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 2 | Qualified | 1W | 1 | SINGLE | COLLECTOR | NPN | 1W | 300mA | 150V | 150V | SWITCHING | SILICON | NPN | 10μA ICBO | 150V | 6V | 100 @ 150mA 10V | 400mV @ 15mA, 150mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N930 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/253 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | Lead, Tin | 3 | TO-206AA, TO-18-3 Metal Can | Through Hole | -55°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 3 | Other Transistors | Qualified | 300mW | 1 | SINGLE | COLLECTOR | NPN | 300mW | 30mA | 45V | 45V | SILICON | NPN | 30MHz | 2nA | 60V | 6V | 100 @ 10μA 5V | 1V @ 500μA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N1485 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/180 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-233AA, TO-8-3 Metal Can | Through Hole | -65°C~200°C TJ | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 3 | Qualified | 1.75W | MIL-S-19500/180D | 1 | SINGLE | COLLECTOR | NPN | 3A | 40V | SILICON | NPN | 1.25MHz | 15μA ICBO | 3A | 60V | 35 @ 750mA 4V | 750mV @ 40mA, 750mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS2N5339U3 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 2007 | Military, MIL-PRF-19500/560 | no | Discontinued | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | 5-SMD | Surface Mount | -65°C~200°C TJ | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 5 | Qualified | 1W | 1W | MIL-19500/560 | 1 | SINGLE | TO-276AA | COLLECTOR | NPN | 5A | 100V | SWITCHING | SILICON | NPN | 100μA | 100V | 60 @ 2A 2V | 1.2V @ 500mA, 5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N1893 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/182 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AA, TO-5-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 2 | Qualified | 800mW | 1 | SINGLE | COLLECTOR | NPN | 800mW | 500mA | 80V | SILICON | NPN | 10μA ICBO | 120V | 7V | 40 @ 150mA 10V | 5V @ 15mA, 150mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N2946A | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/382 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-206AB, TO-46-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 3 | Qualified | 400mW | 1 | SINGLE | COLLECTOR | PNP | 400mW | 100mA | 35V | 35V | CHOPPER | SILICON | PNP | 450ns | 10μA ICBO | 40V | 40V | 50 @ 1mA 500mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N6274 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/514 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | No | 3 | TO-204AE | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Other Transistors | Qualified | 250W | MIL | 1 | SINGLE | TO-204AA | COLLECTOR | NPN | 50A | 100V | SWITCHING | SILICON | NPN | 30MHz | 50μA | 50A | 120V | 30 @ 20A 4V | 3V @ 10A, 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N6052 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/501 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | TO-204AA, TO-3 | Through Hole | -55°C~175°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBFM-P2 | Qualified | 150W | 1 | PNP | COLLECTOR | Single | 100V | AMPLIFIER | SILICON | PNP - Darlington | 1mA | 3V | 12A | 100V | 5V | 1000 @ 6A 3V | 3V @ 120mA, 12A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N2907A | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/291 | Active | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 3 | TO-206AA, TO-18-3 Metal Can | 5.33mm | Through Hole | -65°C~200°C TJ | 500mW | 500mW | 1 | PNP | 500mW | TO-206AA (TO-18) | 600mA | 60V | 60V | 200°C | PNP | 50nA | 1.6V | 60V | 600mA | 60V | 5V | 100 | 100 @ 150mA 10V | 1.6V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N6299 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/540 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | No | TO-213AA, TO-66-2 | Through Hole | -65°C~175°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 3 | O-MBFM-P2 | Qualified | 64W | 64W | 1 | PNP | COLLECTOR | Single | 500μA | 80V | 80V | SILICON | PNP - Darlington | 4MHz | 2V | 8A | 80V | 5V | 750 @ 4A 3V | 2V @ 16mA, 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N6058 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/502 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Contains Lead | Lead, Tin | TO-204AA, TO-3 | Through Hole | -55°C~175°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBFM-P2 | Qualified | 150W | 150W | 1 | NPN | COLLECTOR | Single | 12A | 80V | 80V | AMPLIFIER | SILICON | NPN - Darlington | 1mA | 3V | 80V | 5V | 1000 @ 6A 3V | 3V @ 120mA, 12A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N2484 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/376 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | Contains Lead | No | 3 | TO-206AA, TO-18-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 3 | Qualified | 360mW | 1 | SINGLE | COLLECTOR | NPN | 360mW | 50mA | 60V | 60V | SWITCHING | SILICON | NPN | 60MHz | 2nA | 60V | 6V | 225 @ 10mA 5V | 300mV @ 100μA, 1mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75M50B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 75A | No | 3 | HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | 1.04kW | 45 ns | 1040W Tc | 75A | SWITCHING | 0.075Ohm | 120 ns | SILICON | N-Channel | 75m Ω @ 37A, 10V | 5V @ 2.5mA | 11600pF @ 25V | 290nC @ 10V | 55ns | 39 ns | 30V | 75A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30M19JVR | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | 1997 | POWER MOS V® | yes | Active | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | Lead Free | 130A | No | 4 | HIGH VOLTAGE | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | 300V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | UPPER | UNSPECIFIED | 4 | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 700W | 22 ns | 700W Tc | 130A | SWITCHING | 70 ns | SILICON | N-Channel | 19m Ω @ 500mA, 10V | 4V @ 5mA | 21600pF @ 25V | 975nC @ 10V | 33ns | 10 ns | 30V | 130A Tc | 520A | 3600 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100UM45FAG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | Bulk | 2006 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 108mm | RoHS Compliant | Lead Free | No | 6 | AVALANCHE RATED | SP6 | 15mm | 62mm | 52mOhm | Chassis Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 2 | R-PUFM-X2 | 1 | 1 | ISOLATED | Single | 5kW | 18 ns | 5000W Tc | 215A | SWITCHING | 140 ns | SILICON | N-Channel | 52m Ω @ 107.5A, 10V | 5V @ 30mA | 42700pF @ 25V | 1602nC @ 10V | 14ns | 55 ns | 30V | 215A Tc | 1000V | 3200 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| APTM20UM03FAG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | Bulk | 2012 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | No | 6 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 2 | R-PUFM-X2 | 1 | SINGLE WITH BUILT-IN DIODE | 2.27kW | 32 ns | 2270W Tc | 580A | 200V | 88 ns | SILICON | N-Channel | 3.6m Ω @ 290A, 10V | 5V @ 15mA | 43300pF @ 25V | 840nC @ 10V | 64ns | 116 ns | 30V | 580A Tc | 200V | 2320A | 3000 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT77N60JC3 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Chassis Mount, Screw | Tube | 1997 | no | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | 77A | No | 4 | AVALANCHE RATED | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | 1 | ISOLATED | Single | 568W | 18 ns | 568W Tc | 77A | 0.035Ohm | 110 ns | SILICON | N-Channel | 35m Ω @ 60A, 10V | 3.9V @ 5.4mA | 13600pF @ 25V | 640nC @ 10V | 27ns | 8 ns | 20V | 600V | 77A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| APT10090BLLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 12A | TO-247-3 | Through Hole | -55°C~150°C TJ | 1kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | DRAIN | 298W | 9 ns | 298W Tc | 12A | SWITCHING | 0.9Ohm | 23 ns | SILICON | N-Channel | 950m Ω @ 6A, 10V | 5V @ 1mA | 1969pF @ 25V | 71nC @ 10V | 5ns | 4 ns | 30V | 12A Tc | 1000V | 48A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| APT10M11JVRU2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | Bulk | 2006 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | No | 4 | AVALANCHE RATED | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 1 | ISOLATED | Single | 450W | 16 ns | 450W Tc | 142A | SWITCHING | 51 ns | SILICON | N-Channel | 11m Ω @ 71A, 10V | 4V @ 2.5mA | 8600pF @ 25V | 300nC @ 10V | 48ns | 9 ns | 30V | 142A Tc | 100V | 576A | 2500 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| APT19F100J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Tube | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 4 | RoHS Compliant | Lead Free | 19A | No | 4 | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | 1kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | UPPER | UNSPECIFIED | 4 | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 460W | 36 ns | 460W Tc | 20A | SWITCHING | 140 ns | SILICON | N-Channel | 440m Ω @ 16A, 10V | 5V @ 2.5mA | 8500pF @ 25V | 260nC @ 10V | 37ns | 35 ns | 30V | 20A Tc | 1000V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT32F120J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Chassis Mount, Screw | Tube | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | Tin | 32A | No | 4 | AVALANCHE RATED, UL RECOGNIZED, HIGH RELIABILITY | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | 1.2kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | UPPER | UNSPECIFIED | 4 | 1 | 1 | ISOLATED | Single | 960W | 100 ns | 960W Tc | 33A | SWITCHING | 0.32Ohm | 315 ns | SILICON | N-Channel | 320m Ω @ 25A, 10V | 5V @ 2.5mA | 18200pF @ 25V | 560nC @ 10V | 60ns | 90 ns | 30V | 1.2kV | 33A Tc | 1200V | 2700 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| APT26F120B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 26A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-247-3 Variant | 5.31mm | 16.26mm | Through Hole | -55°C~150°C TJ | 1.2kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | SINGLE | 3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 50 ns | 1135W Tc | 27A | SWITCHING | 0.58Ohm | 170 ns | SILICON | N-Channel | 650m Ω @ 14A, 10V | 5V @ 2.5mA | 9670pF @ 25V | 300nC @ 10V | 31ns | 48 ns | 30V | 1.2kV | 27A Tc | 1200V | 10V | ±30V |