Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Subcategory | Max Power Dissipation | Power - Max | Diode Element Material | Number of Elements | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Output Current | Polarity | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Max Surge Current | Element Configuration | Turn On Delay Time | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Reverse Recovery Time | Reverse Voltage (DC) | Recovery Time | Reverse Test Voltage | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Capacitance @ Vr, F | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
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APT2X101DQ100J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | 1997 | yes | Active | 1 (Unlimited) | 4 | 175°C | -55°C | 38.2mm | RoHS Compliant | Lead Free | 100A | No | 4 | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | 1kV | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Other Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 100A | 2.7V | ISOLATED | 1kA | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1000V | 2.7V @ 100A | -55°C~175°C | 1kV | 100A | 100μA | 1kV | 1kA | 2 Independent | 1000V | 290 ns | 1kV | 290 ns | 1000V | ||||||||||||||||||||||||||||||||||||||||||||||||
APT30D100BCTG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Radial, Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 3 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 30A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | 1kV | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | APT30D100 | 3 | R-PSFM-T3 | Rectifier Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 30A | 2.3V | 210A | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1000V | 2.3V @ 30A | -55°C~175°C | 1kV | 30A | 250μA | 1kV | 210A | 1 Pair Common Cathode | 1000V | 290 ns | 1kV | 290 ns | ||||||||||||||||||||||||||||||||||||||||||||||||
APT60S20BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 75A | No | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 200V | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Schottky | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | 1 | 75A | Standard | 75A | 830mV | CATHODE | 600A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 900mV @ 60A | -55°C~150°C | 200V | 75A | 1mA | 200V | 600A | 55 ns | 200V | 55 ns | ||||||||||||||||||||||||||||||||||||||||||||||||
APT60D60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | Tin | 60A | No | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 600V | 8541.10.00.80 | e1 | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 60A | 60A | 1.6V | CATHODE | 600A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 600V | 1.8V @ 60A | -55°C~175°C | 600V | 60A | 250μA | 600V | 600A | 130 ns | 600V | 40 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
APTDF400U120G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Bulk | 1999 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 150°C | -40°C | RoHS Compliant | No | 4 | LP4 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 4 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 450A | ISOLATED | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 2.5mA @ 1200V | 2.5V @ 500A | 1.2kV | 450A | 2.5mA | 1.2kV | 5kA | 1200V | 110 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5809 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | Yes | 2 | HIGH RELIABILITY, METALLURGICALLY BONDED | B, Axial | not_compliant | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY | 1 | 6A | 875mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | 100V | 3A | 5μA | 100V | 125A | 30 ns | 60pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||
APT11GF120KRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2005 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 25A | No | FAST SWITCHING | TO-220-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e3 | PURE MATTE TIN | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 156W | 1 | TO-220AB | ISOLATED | N-CHANNEL | Single | 25A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 12 ns | 3V @ 15V, 8A | 161 ns | NPT | 30V | 1200V | 6.5V | 800V, 8A, 10 Ω, 15V | 65nC | 44A | 7ns/100ns | 300μJ (on), 285μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT15GP90KG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2006 | POWER MOS 7® | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 43A | No | LOW CONDUCTION LOSS | TO-220-3 | Through Hole | -55°C~150°C TJ | 900V | Standard | e3 | PURE MATTE TIN | 3 | R-PSFM-T3 | 250W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 43A | 900V | 900V | POWER CONTROL | SILICON | 23 ns | 3.9V @ 15V, 15A | 170 ns | PT | 600V, 15A, 4.3 Ω, 15V | 60nC | 60A | 9ns/33ns | 200μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT15GP90BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2006 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | 150°C | -55°C | RoHS Compliant | Lead Free | 43A | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | 900V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 43A | 900V | 900V | POWER CONTROL | 23 ns | 3.9V @ 15V, 15A | 170 ns | PT | 600V, 15A, 4.3 Ω, 15V | 60nC | 60A | 9ns/33ns | 200μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20GN60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 40A | No | TO-247-3 | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 136W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 40A | 600V | 600V | POWER CONTROL | SILICON | 19 ns | 1.9V @ 15V, 20A | 290 ns | Trench Field Stop | 30V | 6.5V | 400V, 20A, 4.3 Ω, 15V | 120nC | 60A | 9ns/140ns | 230μJ (on), 580μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT11GF120BRDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2005 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 25A | No | 3 | ULTRA FAST | TO-247-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | 156W | 1 | TO-247AC | N-CHANNEL | Single | 25A | 1.2kV | 3V | POWER CONTROL | SILICON | 12 ns | 3V @ 15V, 8A | 161 ns | NPT | 1200V | 800V, 8A, 10 Ω, 15V | 65nC | 24A | 7ns/100ns | 300μJ (on), 285μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT13GP120KG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | POWER MOS 7® | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 41A | No | LOW CONDUCTION LOSS | TO-220-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 250W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 41A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 21 ns | 3.9V @ 15V, 13A | 270 ns | PT | 1200V | 600V, 13A, 5 Ω, 15V | 55nC | 50A | 9ns/28ns | 114μJ (on), 165μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT25GR120SSCD10 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | Obsolete | 1 (Unlimited) | RoHS Compliant | Lead Free | 3 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | 521W | N-CHANNEL | Single | 75A | 1.2kV | 3.2V | 3.2V @ 15V, 25A | NPT | 1200V | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 434μJ (on), 466μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT25GR120BSCD10 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 2001 | Obsolete | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | 521W | N-CHANNEL | 75A | 1.2kV | 3.2V | 3.2V @ 15V, 25A | NPT | 30V | 1200V | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 434μJ (on), 466μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT40GR120B2SCD10 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 2001 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 500W | 500W | Single | 20 ns | 88A | 1.2kV | 3.2V | 166 ns | 3.2V @ 15V, 40A | NPT | 1200V | 600V, 40A, 4.3 Ω, 15V | 210nC | 160A | 20ns/166ns | 929μJ (on), 1070μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT30GS60KRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2012 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | No | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 250W | 250W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 54A | 600V | 600V | MOTOR CONTROL | SILICON | 45 ns | 3.15V @ 15V, 30A | 412 ns | NPT | 30V | 5V | 400V, 30A, 9.1 Ω, 15V | 145nC | 113A | 16ns/360ns | 570μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT44GA60B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 337W | 337W | 1 | COLLECTOR | N-CHANNEL | Single | 78A | 600V | 600V | POWER CONTROL | SILICON | 29 ns | 2.5V @ 15V, 26A | 208 ns | PT | 30V | 6V | 400V, 26A, 4.7 Ω, 15V | 128nC | 130A | 16ns/84ns | 409μJ (on), 258μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT27GA90BD15 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 223W | 223W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 48A | 900V | 900V | POWER CONTROL | SILICON | 18 ns | 3.1V @ 15V, 14A | 281 ns | PT | 600V, 14A, 10 Ω, 15V | 62nC | 79A | 9ns/98ns | 413μJ (on), 287μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT33GF120BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2001 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 33A | No | FAST SWITCHING | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 297W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 52A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 2.5V | 85 ns | 3.2V @ 15V, 25A | 284 ns | NPT | 1200V | 52A | 170nC | 104A | 25ns/210ns | 2.8mJ (on), 2.8mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
APT60GT60BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | Active | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Lead Free | Tin | 100A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | 500W | 500W | Single | TO-247 [B] | 100A | 600V | 600V | 2.5V @ 15V, 60A | NPT | 600V | 100A | 275nC | 360A | 26ns/395ns | 3.4mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT40GT60BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 80A | No | AVALANCHE RATED | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 345W | 1 | COLLECTOR | N-CHANNEL | Single | 80A | 600V | 600V | POWER CONTROL | SILICON | 2V | 63 ns | 2.5V @ 15V, 40A | 353 ns | NPT | 80A | 400V, 40A, 5 Ω, 15V | 200nC | 160A | 12ns/124ns | 828μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GT120B2RG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | 625W | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 24 ns | 94A | 1.2kV | 1.2kV | POWER CONTROL | 230 ns | SILICON | 77 ns | 3.7V @ 15V, 50A | 303 ns | NPT | 1200V | 800V, 50A, 4.7 Ω, 15V | 340nC | 150A | 24ns/230ns | 2330μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT95GR65JDU60 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
Chassis Mount | Bulk | 2001 | Obsolete | 1 (Unlimited) | RoHS Compliant | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | Standard | 446W | 446W | 135A | 650V | 2.4V | 2.4V @ 15V, 95A | NPT | 433V, 95A, 4.3 Ω, 15V | 420nC | 380A | 29ns/226ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT75GN60LDQ3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | 26.49mm | RoHS Compliant | Lead Free | No | HIGH RELIABILITY | TO-264-3, TO-264AA | 5.21mm | 20.5mm | Through Hole | 10.6g | -55°C~175°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 536W | 1 | COLLECTOR | N-CHANNEL | Single | 47 ns | 155A | 600V | 600V | POWER CONTROL | 385 ns | SILICON | 1.45V | 95 ns | 1.85V @ 15V, 75A | 485 ns | Trench Field Stop | 30V | 155A | 6.5V | 400V, 75A, 1 Ω, 15V | 485nC | 225A | 47ns/385ns | 2500μJ (on), 2140μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
APT30GP60BDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 30A | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 463W | 463W | 1 | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 600V | POWER CONTROL | SILICON | 31 ns | 2.7V @ 15V, 30A | 165 ns | PT | 400V, 30A, 5 Ω, 15V | 90nC | 120A | 13ns/55ns | 260μJ (on), 250μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT25GP120BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 69A | No | ULTRA FAST, LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 417W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 69A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 26 ns | 3.9V @ 15V, 25A | 197 ns | PT | 1200V | 600V, 25A, 5 Ω, 15V | 110nC | 90A | 12ns/70ns | 500μJ (on), 438μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GT120LRDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 31 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | HIGH RELIABILITY | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 694W | 694W | 1 | COLLECTOR | N-CHANNEL | Single | 106A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 73 ns | 3.7V @ 15V, 50A | 305 ns | NPT | 1200V | 800V, 50A, 1 Ω, 15V | 240nC | 150A | 23ns/215ns | 2585μJ (on), 1910μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT150GN60B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | No | LOW CONDUCTION LOSS, HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~175°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 536W | 536W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 220A | 600V | 600V | POWER CONTROL | SILICON | 154 ns | 1.85V @ 15V, 150A | 575 ns | Trench Field Stop | 30V | 6.5V | 400V, 150A, 1 Ω, 15V | 970nC | 450A | 44ns/430ns | 8.81mJ (on), 4.295mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GN60BDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 107A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~175°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 366W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 20 ns | 107A | 600V | 600V | POWER CONTROL | 230 ns | SILICON | 1.5V | 45 ns | 1.85V @ 15V, 50A | 400 ns | Trench Field Stop | 30V | 107A | 6.5V | 400V, 50A, 4.3 Ω, 15V | 325nC | 150A | 20ns/230ns | 1185μJ (on), 1565μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
APT44GA60BD30 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 337W | 337W | 1 | COLLECTOR | N-CHANNEL | Single | 78A | 600V | 600V | POWER CONTROL | SILICON | 29 ns | 2.5V @ 15V, 26A | 208 ns | PT | 30V | 6V | 400V, 26A, 4.7 Ω, 15V | 128nC | 130A | 16ns/84ns | 409μJ (on), 258μJ (off) |
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