All Products
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Integrated Circuits (ICs)
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Connectors
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Discrete Semiconductors
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Capacitors
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Sensors
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RF/IF & RFID
- RF/IF & RFID
- Attenuators
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- RFI & EMI Materials
- RFID Accessories
- RFID Antennas
- RFID Boards
- RFID ICs
- RFID Reader Modules
- RFID Tags
- Circuit Protection
- Crystals
- Inductors
- Filters
Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Operating Temperature (Max) | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Polarity/Channel Type | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Element Configuration | Power Dissipation | Turn On Delay Time | Power Dissipation-Max | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Transistor Type | Turn On Time-Max (ton) | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Turn Off Time-Max (toff) | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N3716 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 2007 | Active | 200°C | -65°C | Non-RoHS Compliant | Lead, Tin | No | 3 | TO-3 | 5W | 1 | NPN | 5W | 10A | 80V | 100V | 7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N6301 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/539 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | No | TO-213AA, TO-66-2 | Through Hole | -55°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 3 | O-MBFM-P2 | Qualified | 75W | 1 | NPN | COLLECTOR | Single | 8A | 80V | SWITCHING | SILICON | PNP - Darlington | 4MHz | 500μA | 2V | 80V | 5V | 750 @ 4A 3V | 3V @ 80mA, 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N6052 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | Military, MIL-PRF-19500/501 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | TO-3 | Through Hole | -55°C~175°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBFM-P2 | Qualified | 150W | 1 | PNP | COLLECTOR | Single | 100V | AMPLIFIER | SILICON | PNP - Darlington | 1mA | 3V | 12A | 100V | 5V | 1000 @ 6A 3V | 3V @ 120mA, 12A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5671 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2002 | no | Active | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | No | 3 | e0 | TIN LEAD | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Other Transistors | 6W | 1 | SINGLE | TO-204AA | COLLECTOR | NPN | 20 | 30A | 90V | 50MHz | 120V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N4234 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/580 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | Qualified | 1W | 1W | MIL-19500/580 | 1 | SINGLE | NPN | 1A | 40V | AMPLIFIER | SILICON | PNP | 1mA | 40V | 30 @ 250mA 1V | 600mV @ 100mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N3792 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/379 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | No | 3 | TO-204AA, TO-3 | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Qualified | 5W | 1 | SINGLE | COLLECTOR | PNP | 5W | 10A | 80V | SWITCHING | SILICON | PNP | 4MHz | 5mA | 80V | 7V | 30 @ 3A 2V | 2.5V @ 2A, 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5796U | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Surface Mount | Bulk | 2003 | no | Active | 6 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Lead, Tin | 8541.21.00.95 | e0 | TIN LEAD | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 6 | R-CDCC-N6 | Other Transistors | Not Qualified | 600mW | 2 | TO-78 | PNP | 50 | 600mA | 60V | 50ns | 140ns | 60V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N4234 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/580 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | Qualified | 1W | 1 | SINGLE | NPN | 1W | 1A | 40V | AMPLIFIER | SILICON | PNP | 1mA | 40V | 7V | 30 @ 250mA 1V | 600mV @ 100mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5686 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | no | Active | 2 | EAR99 | 200°C | -55°C | Non-RoHS Compliant | Lead, Tin | 8541.29.00.95 | e0 | TIN LEAD | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBFM-P2 | Not Qualified | 300W | 1 | SINGLE | TO-204AE | COLLECTOR | NPN | 5 | 50A | 80V | 80V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N6051 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/501 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Contains Lead | No | TO-204AA, TO-3 | Through Hole | -55°C~175°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Qualified | 150W | 1 | PNP | COLLECTOR | Single | 12A | 80V | AMPLIFIER | SILICON | PNP - Darlington | 1mA | 3V | 80V | 5V | 1000 @ 6A 3V | 3V @ 120mA, 12A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS2N6193 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Bulk | Military, MIL-PRF-19500/561 | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 3 | Qualified | 1W | MILITARY STANDARD (USA) | 1 | TO-5 | 1W | 5A | 100V | SILICON | PNP | 100μA | 100V | 6V | 60 @ 2A 2V | 1.2V @ 500mA, 5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5004 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Stud | Bulk | 2007 | no | Active | 3 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | No | 3 | 8541.29.00.95 | e0 | TIN LEAD | UPPER | UNSPECIFIED | Other Transistors | 2W | 1 | SINGLE | TO-59 | ISOLATED | NPN | 40 | 5A | 80V | SWITCHING | 70MHz | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6353 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | no | Active | 3 | EAR99 | Non-RoHS Compliant | Lead, Tin | 4 | e0 | TIN LEAD | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 3 | O-MBFM-P3 | 200°C | Not Qualified | 1 | TO-213AA | NPN | 5A | 200 | Single | 150V | SILICON | 150V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N5681 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Bulk | 2002 | no | Active | 3 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Lead, Tin | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBCY-W3 | Other Transistors | Qualified | 1W | MIL-19500/583 | 1 | SINGLE | TO-205AD | NPN | 5 | 1A | 100V | AMPLIFIER | 30MHz | 100V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N5664 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
22 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/455 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | TO-213AA, TO-66-2 | not_compliant | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBFM-P2 | Qualified | 2.5W | 1 | SINGLE | COLLECTOR | NPN | 2.5W | 5A | 200V | SWITCHING | SILICON | NPN | 200nA | 250V | 6V | 40 @ 1A 5V | 1V @ 5A, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5152 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2007 | no | Active | 3 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | No | 3 | TO-39 | e0 | TIN LEAD | BOTTOM | WIRE | 1W | 1 | SINGLE | TO-5 | NPN | 30 | 1W | 2A | 80V | 100V | 5.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6317 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2007 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | TO-213AA, TO-66-2 | not_compliant | Through Hole | -65°C~200°C TJ | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | O-MBFM-P2 | Not Qualified | 90W | 90W | PNP | 7A | 60V | 2V | SILICON | PNP | 500μA | 25 @ 2.5A 4V | 2V @ 1.75A, 7A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N3766 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/518 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | No | 3 | TO-213AA, TO-66-2 | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 3 | O-MBFM-P2 | Qualified | 25W | 1 | SINGLE | COLLECTOR | NPN | 25W | 4A | 60V | SWITCHING | SILICON | NPN | 10MHz | 500μA | 80V | 6V | 40 @ 500mA 5V | 2.5V @ 100mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N3501UB | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | Surface Mount | Bulk | Military, MIL-PRF-19500/366 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | Contains Lead | 3-SMD, No Lead | Surface Mount | -65°C~200°C TJ | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | DUAL | NOT SPECIFIED | NOT SPECIFIED | 3 | R-CDSO-N3 | Qualified | 500mW | 500mW | MIL-19500/366 | 1 | SINGLE | COLLECTOR | NPN | 300mA | 150V | 400mV | SWITCHING | SILICON | NPN | 115ns | 1150ns | 10μA ICBO | 100 @ 150mA 10V | 400mV @ 15mA, 150mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N6298 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/540 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | TO-213AA, TO-66-2 | Through Hole | -65°C~175°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 3 | O-MBFM-P2 | Qualified | 64W | 1 | PNP | COLLECTOR | Single | 60V | SILICON | PNP - Darlington | 4MHz | 500μA | 2V | 8A | 60V | 5V | 750 @ 4A 3V | 2V @ 80mA, 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N6300 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/539 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | TO-213AA, TO-66-2 | Through Hole | -55°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBFM-P2 | Qualified | 75W | 1 | NPN | COLLECTOR | Single | 60V | SWITCHING | SILICON | NPN - Darlington | 4MHz | 500μA ICBO | 2V | 8A | 60V | 5V | 750 @ 4A 3V | 3V @ 80mA, 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4240 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1999 | Active | 200°C | -65°C | Non-RoHS Compliant | No | 3 | TO-66 | 35W | 1 | NPN | 35W | 2A | 300V | 500V | 6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N3767 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2002 | no | Active | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 3 | TO-66 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 3 | O-MBFM-P2 | Qualified | 25W | 1 | SINGLE | NPN | COLLECTOR | 20 | 25W | 4A | 80V | SWITCHING | 10MHz | 100V | 6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N3868S | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/350 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 2 | Qualified | 1W | 1 | SINGLE | COLLECTOR | PNP | 1W | 3A | 60V | SWITCHING | SILICON | PNP | 600ns | 100μA ICBO | 60V | 4V | 30 @ 1.5A 2V | 1.5V @ 250mA, 2.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N3867S | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/350 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 2 | Qualified | 1W | 1W | 1 | SINGLE | COLLECTOR | PNP | 3A | 40V | SWITCHING | SILICON | PNP | 100ns | 600ns | 100μA ICBO | 40V | 40 @ 1.5A 2V | 1.5V @ 250mA, 2.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5012 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
OBSOLETE (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | no | Obsolete | Not Applicable | 3 | EAR99 | RoHS Compliant | No | 3 | TO-205AA, TO-5-3 Metal Can | Through Hole | -65°C~200°C TJ | 8541.29.00.95 | e0 | TIN LEAD | BOTTOM | WIRE | 1W | 1 | SINGLE | NPN | 200mA | SILICON | NPN | 10nA ICBO | 200mA | 700V | 30 @ 25mA 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5014 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
OBSOLETE (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | no | Obsolete | Not Applicable | 3 | EAR99 | RoHS Compliant | Contains Lead | No | 3 | TO-205AA, TO-5-3 Metal Can | Through Hole | -65°C~200°C TJ | 8541.29.00.95 | e0 | TIN LEAD | BOTTOM | WIRE | 3 | Other Transistors | 1W | 1 | SINGLE | NPN | 200mA | SILICON | NPN | 10nA ICBO | 200mA | 900V | 30 @ 20mA 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25M100J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | Lead Free | 25A | No | 4 | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | 1kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | UPPER | UNSPECIFIED | 4 | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 545W | 44 ns | 545W Tc | 25A | SWITCHING | 0.33Ohm | 150 ns | SILICON | N-Channel | 330m Ω @ 18A, 10V | 5V @ 2.5mA | 9835pF @ 25V | 305nC @ 10V | 40ns | 38 ns | 30V | 25A Tc | 1000V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT10021JLL | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | 1997 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | Lead Free | 37A | No | 4 | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | 1kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 694W | 29 ns | 694W Tc | 37A | SWITCHING | 80 ns | SILICON | N-Channel | 210m Ω @ 18.5A, 10V | 5V @ 5mA | 9750pF @ 25V | 395nC @ 10V | 22ns | 20 ns | 30V | 37A Tc | 1000V | 3600 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| APT10M11JVRU3 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Chassis Mount, Screw | Bulk | 2006 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | No | 4 | AVALANCHE RATED | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | 11mOhm | Chassis Mount | 30.000004g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 1 | ISOLATED | Single | 450W | 16 ns | 450W Tc | 142A | SWITCHING | 51 ns | SILICON | N-Channel | 11m Ω @ 71A, 10V | 4V @ 2.5mA | 8600pF @ 25V | 300nC @ 10V | 48ns | 9 ns | 30V | 142A Tc | 100V | 576A | 2500 mJ | 10V | ±30V |