All Products
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Integrated Circuits (ICs)
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Connectors
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RF/IF & RFID
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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Polarity/Channel Type | Power Dissipation-Max (Abs) | DC Current Gain-Min (hFE) | Element Configuration | Power Dissipation | Turn On Delay Time | Power Dissipation-Max | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Transistor Type | Turn On Time-Max (ton) | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Turn Off Time-Max (toff) | Current - Collector Cutoff (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT75M50B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 75A | No | 3 | HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | 1.04kW | 45 ns | 1040W Tc | 75A | SWITCHING | 0.075Ohm | 120 ns | SILICON | N-Channel | 75m Ω @ 37A, 10V | 5V @ 2.5mA | 11600pF @ 25V | 290nC @ 10V | 55ns | 39 ns | 30V | 75A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30M19JVR | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | 1997 | POWER MOS V® | yes | Active | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | Lead Free | 130A | No | 4 | HIGH VOLTAGE | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | 300V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | UPPER | UNSPECIFIED | 4 | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 700W | 22 ns | 700W Tc | 130A | SWITCHING | 70 ns | SILICON | N-Channel | 19m Ω @ 500mA, 10V | 4V @ 5mA | 21600pF @ 25V | 975nC @ 10V | 33ns | 10 ns | 30V | 130A Tc | 520A | 3600 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100UM45FAG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | Bulk | 2006 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 108mm | RoHS Compliant | Lead Free | No | 6 | AVALANCHE RATED | SP6 | 15mm | 62mm | 52mOhm | Chassis Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 2 | R-PUFM-X2 | 1 | 1 | ISOLATED | Single | 5kW | 18 ns | 5000W Tc | 215A | SWITCHING | 140 ns | SILICON | N-Channel | 52m Ω @ 107.5A, 10V | 5V @ 30mA | 42700pF @ 25V | 1602nC @ 10V | 14ns | 55 ns | 30V | 215A Tc | 1000V | 3200 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| APTM20UM03FAG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | Bulk | 2012 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | No | 6 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 2 | R-PUFM-X2 | 1 | SINGLE WITH BUILT-IN DIODE | 2.27kW | 32 ns | 2270W Tc | 580A | 200V | 88 ns | SILICON | N-Channel | 3.6m Ω @ 290A, 10V | 5V @ 15mA | 43300pF @ 25V | 840nC @ 10V | 64ns | 116 ns | 30V | 580A Tc | 200V | 2320A | 3000 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| APL1001J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Chassis Mount, Screw | Tube | 1997 | Obsolete | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | 18A | No | 4 | UL RECOGNIZED | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | -55°C~150°C TJ | 1kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 1 | ISOLATED | Single | 520W | 14 ns | 520W Tc | 18A | 0.6Ohm | 60 ns | SILICON | N-Channel | 600m Ω @ 500mA, 10V | 4V @ 2.5mA | 7200pF @ 25V | 14ns | 14 ns | 30V | 18A Tc | 1000V | 72A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| APT12M80B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 12A | No | AVALANCHE RATED, HIGH RELIABILITY | TO-247-3 | Through Hole | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | DRAIN | 335W | 14 ns | 335W Tc | 13A | SWITCHING | 0.8Ohm | 60 ns | SILICON | N-Channel | 800m Ω @ 6A, 10V | 5V @ 1mA | 2470pF @ 25V | 80nC @ 10V | 20ns | 18 ns | 30V | 13A Tc | 45A | 525 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2N3811L | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2007 | no | Obsolete | 1 (Unlimited) | 8 | EAR99 | Non-RoHS Compliant | No | 6 | TO-78-6 Metal Can | Through Hole | -65°C~200°C TJ | 8541.21.00.95 | e0 | TIN LEAD | BOTTOM | WIRE | 8 | O-MBCY-W8 | Other Transistors | 350mW | 350mW | 2 | SEPARATE, 2 ELEMENTS | PNP | 50mA | 60V | 250mV | SILICON | 2 PNP (Dual) | 10μA ICBO | 60V | 300 @ 1mA 5V | 250mV @ 100μA, 1mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3811U | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount, Through Hole | Bulk | 2007 | no | Obsolete | 1 (Unlimited) | 8 | EAR99 | Non-RoHS Compliant | No | 6 | TO-78-6 Metal Can | Through Hole | -65°C~200°C TJ | e0 | TIN LEAD | BOTTOM | WIRE | O-MBCY-W8 | Other Transistors | 350mW | 2 | PNP | 350mW | 50mA | 60V | 60V | SILICON | 2 PNP (Dual) | 10μA ICBO | 60V | 5V | 300 @ 1mA 5V | 250mV @ 100μA, 1mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N3811U | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/336 | no | Obsolete | 1 (Unlimited) | 8 | EAR99 | Non-RoHS Compliant | No | 6 | TO-78-6 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | O-MBCY-W8 | Other Transistors | 350mW | 2 | PNP | 350mW | 50mA | 60V | 60V | SILICON | 2 PNP (Dual) | 10μA ICBO | 60V | 5V | 300 @ 1mA 5V | 250mV @ 100μA, 1mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N2920U | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
23 Weeks | Surface Mount | Bulk | 2007 | Military, MIL-PRF-19500/355 | no | Discontinued | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | Contains Lead | No | 6 | 6-SMD, No Lead | Surface Mount | 200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | Other Transistors | Qualified | 350mW | MIL-19500/355 | 2 | TO-78 | NPN | 350mW | 30mA | 60V | SILICON | 2 NPN (Dual) | 10μA ICBO | 70V | 6V | 300 @ 1mA 5V | 300mV @ 100μA, 1mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N2060 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/270 | no | Discontinued | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | No | 6 | TO-78-6 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 8 | Other Transistors | Qualified | 600mW | 2 | NPN | 600mW | 500mA | 60V | SILICON | 2 NPN (Dual) | 60MHz | 10μA ICBO | 100V | 7V | 50 @ 10mA 5V | 300mV @ 5mA, 50mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N5794U | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 2003 | Military, MIL-PRF-19500/495 | no | Active | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | No | 6-SMD, No Lead | Surface Mount | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | 6 | R-XDSO-N6 | Qualified | 600mW | MIL-19500/495D | 2 | TO-78 | NPN | 600mW | 600mA | 40V | SWITCHING | SILICON | 2 NPN (Dual) | 45ns | 310ns | 10μA ICBO | 75V | 6V | 100 @ 150mA 10V | 900mV @ 30mA, 300mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N3506 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Bulk | Military, MIL-PRF-19500/349 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Other Transistors | Qualified | 1W | 1 | SINGLE | COLLECTOR | NPN | 5W | SWITCHING | SILICON | NPN | 45ns | 60MHz | 90ns | 40V | 3A | 40 @ 1.5A 2V | 1.5V @ 250mA, 2.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N3019S | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/391 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 2 | Qualified | 800mW | 1 | SINGLE | COLLECTOR | NPN | 800mW | 1A | 80V | 80V | SWITCHING | SILICON | NPN | 10nA | 140V | 7V | 50 @ 500mA 10V | 500mV @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N2904A | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Active | 200°C | -65°C | Non-RoHS Compliant | No | 3 | TO-39 | 600mW | 1 | PNP | 600mW | 600mA | 60V | 60V | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N2945A | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 2013 | no | Active | 3 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | No | 3 | e0 | TIN LEAD | BOTTOM | WIRE | 3 | Other Transistors | 400mW | 1 | SINGLE | TO-46 | PNP | 70 | 100mA | 20V | CHOPPER | 10MHz | 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N2905A | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/290 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | Contains Lead | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 2 | Other Transistors | Qualified | 800mW | 800mW | 1 | SINGLE | COLLECTOR | PNP | 600mW | 600mA | 60V | 60V | SWITCHING | SILICON | PNP | 45ns | 200MHz | 1μA | 60V | 5V | 100 @ 150mA 10V | 1.6V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N3440 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Bulk | Military, MIL-PRF-19500/368 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | Contains Lead | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 2 | Other Transistors | Qualified | 800mW | 1 | SINGLE | COLLECTOR | NPN | 800mW | 1A | 250V | 250V | SILICON | NPN | 15MHz | 2μA | 300V | 7V | 40 @ 20mA 10V | 500mV @ 4mA, 50mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N3019 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/391 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AA, TO-5-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 2 | Other Transistors | Qualified | 800mW | 1 | SINGLE | COLLECTOR | NPN | 800mW | 1A | 80V | 80V | SWITCHING | SILICON | NPN | 100MHz | 10μA ICBO | 140V | 7V | 50 @ 500mA 10V | 500mV @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N3501UB | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 2007 | Military, MIL-PRF-19500/366 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | 4 | 3-SMD, No Lead | Surface Mount | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | DUAL | NOT SPECIFIED | NOT SPECIFIED | 3 | R-CDSO-N3 | Qualified | 500mW | 500mW | MIL-19500/366 | 1 | SINGLE | COLLECTOR | NPN | 300mA | 150V | 400mV | SWITCHING | SILICON | NPN | 115ns | 1150ns | 10μA ICBO | 100 @ 150mA 10V | 400mV @ 15mA, 150mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3507 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | 2007 | no | Active | 3 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Lead, Tin | No | 3 | TO-39 | e0 | TIN LEAD | BOTTOM | WIRE | 2 | Other Transistors | 1W | 1 | SINGLE | NPN | 20 | 1W | 3A | 50V | SWITCHING | 45ns | 60MHz | 90ns | 80V | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N5664 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/455 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | No | TO-213AA, TO-66-2 | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Qualified | 2.5W | 1 | SINGLE | COLLECTOR | NPN | 2.5W | 5A | 200V | SWITCHING | SILICON | NPN | 200nA | 250V | 6V | 40 @ 1A 5V | 1V @ 5A, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N696 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | Active | 200°C | -65°C | Non-RoHS Compliant | No | 3 | TO-5 | 600mW | 1 | NPN | 600mW | 40V | 60V | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N1893S | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2002 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | 8541.21.00.95 | e0 | TIN LEAD | BOTTOM | WIRE | Other Transistors | 800mW | 3W | 1 | SINGLE | NPN | 500mA | 80V | SWITCHING | SILICON | NPN | 50MHz | 10μA ICBO | 500mA | 120V | 40 @ 150mA 10V | 5V @ 15mA, 150mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3440L | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 2005 | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | 3 | TO-205AA, TO-5-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | TIN LEAD | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 800mW | 1 | SINGLE | NPN | 800mW | 1A | 250V | 500mV | SILICON | NPN | 2μA | 300V | 7V | 40 @ 20mA 10V | 500mV @ 4mA, 50mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3585 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 2007 | no | Active | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | No | 3 | HIGH RELIABILITY | TO-66 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Other Transistors | 2.5W | 1 | SINGLE | NPN | COLLECTOR | 25 | 2.5W | 2A | 300V | SWITCHING | 10MHz | 500V | 6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N3762 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
22 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/396 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -55°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 2 | Qualified | 1W | 1 | SINGLE | COLLECTOR | PNP | 1W | 1.5A | 40V | SWITCHING | SILICON | PNP | 10μA ICBO | 40V | 5V | 30 @ 1A 1.5V | 900mV @ 100mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N5684 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/466 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | No | 3 | TO-204AA, TO-3 | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Qualified | 300W | 1 | SINGLE | COLLECTOR | PNP | 300W | 50A | 80V | SILICON | NPN | 2MHz | 5μA | 80V | 5V | 30 @ 5A 2V | 5V @ 10A, 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N6437 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Bulk | 2007 | Active | 1 (Unlimited) | 2 | EAR99 | 125°C | -55°C | Non-RoHS Compliant | No | 3 | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | O-MBFM-P2 | Qualified | 200W | MIL | PNP | 30 | 25A | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5016BFLLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1997 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 30A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | DRAIN | 10 ns | 329W Tc | 30A | SWITCHING | 27 ns | SILICON | N-Channel | 160m Ω @ 15A, 10V | 5V @ 1mA | 2833pF @ 25V | 72nC @ 10V | 10ns | 14 ns | 30V | 30A Tc | 10V | ±30V |