Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | Capacitance | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Output Current | Polarity | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Element Configuration | Turn On Delay Time | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Reverse Recovery Time | Reverse Voltage | Reverse Voltage (DC) | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Max Junction Temperature (Tj) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
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UES1302 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1996 | no | Active | Not Applicable | 2 | 175°C | -55°C | RoHS Compliant | Lead Free | 6A | No | 2 | Axial | Through Hole | 100V | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | SILICON | 1 | Standard | EFFICIENCY | 1 | 6A | 6A | 925mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 925mV @ 6A | -55°C~175°C | 100V | 6A | 5μA | 100V | 125A | 30 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT30S20BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Tube | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | RoHS Compliant | Lead Free | 45A | No | TO-247-2 | Through Hole | 200V | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T2 | SILICON | 1 | Schottky | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | 1 | 45A | Standard | 45A | 850mV | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 200V | 850mV @ 30A | -55°C~150°C | 200V | 45A | 500μA | 200V | 320A | 320A | 55 ns | 200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
LSM115JE3/TR13 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 100°C | -55°C | RoHS Compliant | Lead Free | No | 2 | LOW POWER LOSS | DO-214BA | 2.92mm | Surface Mount | 103.986051mg | 150pF | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | LSM115 | 2 | SILICON | 1 | Schottky | 1A | 1A | 220mV | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10mA @ 15V | 220mV @ 1A | -55°C~150°C | 15V | 1A | 10mA | 15V | 50A | 50A | 15V | 15V | 100°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
APT15GN120KG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2004 | POWER MOS 7® | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 45A | No | TO-220-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e3 | PURE MATTE TIN | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 195W | 1 | TO-220AB | N-CHANNEL | Single | 45A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 19 ns | 2.1V @ 15V, 15A | 355 ns | Trench Field Stop | 30V | 1200V | 6.5V | 800V, 15A, 4.3 Ω, 15V | 90nC | 10ns/150ns | 410μJ (on), 950μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT15GP60KG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2005 | POWER MOS 7® | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 56A | No | LOW CONDUCTION LOSS | TO-220-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 250W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 56A | 600V | 600V | POWER CONTROL | SILICON | 20 ns | 2.7V @ 15V, 15A | 157 ns | PT | 400V, 15A, 5 Ω, 15V | 55nC | 65A | 8ns/29ns | 130μJ (on), 121μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT30GT60KRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | Thunderbolt IGBT® | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 64A | No | TO-220-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e3 | PURE MATTE TIN | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 250W | 1 | TO-220AB | N-CHANNEL | Single | 64A | 600V | 600V | POWER CONTROL | SILICON | 32 ns | 2.5V @ 15V, 30A | 345 ns | NPT | 30V | 5V | 400V, 30A, 10 Ω, 15V | 145nC | 110A | 12ns/225ns | 525μJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT75GN60B2DQ3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | 2005 | Obsolete | 1 (Unlimited) | RoHS Compliant | Lead Free | 155A | TO-264-3, TO-264AA | Through Hole | 600V | Standard | 536W | 536W | 155A | 600V | 1.85V | 1.85V @ 15V, 75A | 600V | 155A | 400V, 75A, 1Ohm, 15V | 485nC | 225A | 47ns/385ns | 2500μJ (on), 2140μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT40GP60SG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 2 | RoHS Compliant | Lead Free | 100A | No | 3 | LOW CONDUCTION LOSS | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~150°C TJ | 600V | Standard | e3 | PURE MATTE TIN | GULL WING | 245 | 30 | 3 | R-PSSO-G2 | 543W | 1 | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 600V | POWER CONTROL | SILICON | 49 ns | 2.7V @ 15V, 40A | 158 ns | PT | 400V, 40A, 5 Ω, 15V | 135nC | 160A | 20ns/64ns | 385μJ (on), 352μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20GF120BRDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2005 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 36A | No | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | Insulated Gate BIP Transistors | 200W | 1 | COLLECTOR | N-CHANNEL | Single | 36A | 1.2kV | 3.2V | POWER CONTROL | SILICON | 19 ns | 3.2V @ 15V, 15A | 255 ns | NPT | 1200V | 6.5V | 800V, 15A, 4.3 Ω, 15V | 100nC | 64A | 10ns/120ns | 895μJ (on), 840μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT15GP60BDLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | OBSOLETE (Last Updated: 3 weeks ago) | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 250W | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 56A | 600V | 600V | MOTOR CONTROL | SILICON | 20 ns | 2.7V @ 15V, 15A | 157 ns | PT | 20V | 6V | 400V, 15A, 5 Ω, 15V | 55nC | 65A | 8ns/29ns | 130μJ (on), 121μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GP60LDLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1999 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 625W | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 150A | 600V | 600V | MOTOR CONTROL | SILICON | 55 ns | 2.7V @ 15V, 50A | 200 ns | PT | 400V, 50A, 4.3 Ω, 15V | 165nC | 190A | 19ns/85ns | 456μJ (on), 635μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT30GP60LDLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | OBSOLETE (Last Updated: 3 weeks ago) | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | 3 | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 463W | 463W | 1 | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 2.7V | MOTOR CONTROL | SILICON | 31 ns | 2.7V @ 15V, 30A | 164 ns | PT | 20V | 6V | 400V, 30A, 5 Ω, 15V | 90nC | 120A | 13ns/55ns | 260μJ (on), 250μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT100GT60B2RG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | Thunderbolt IGBT® | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | 3 | HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | Standard | 3 | Insulated Gate BIP Transistors | 500W | 500W | 1 | N-CHANNEL | Single | 148A | 600V | 600V | POWER CONTROL | SILICON | 115 ns | 2.5V @ 15V, 100A | 450 ns | NPT | 5V | 400V, 100A, 4.3 Ω, 15V | 460nC | 300A | 40ns/320ns | 3.25mJ (on), 3.125mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT44GA60BD30C | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2011 | POWER MOS 8™ | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | Standard | SINGLE | 3 | R-PSFM-T3 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 337W | 337W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 78A | 600V | 1.6V | POWER CONTROL | SILICON | 29 ns | 1.6V @ 15V, 26A | 292 ns | PT | 30V | 6V | 400V, 26A, 4.7 Ω, 15V | 128nC | 130A | 16ns/102ns | 409μJ (on), 450μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT30GN60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 63A | No | TO-247-3 | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 203W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 63A | 600V | 600V | POWER CONTROL | SILICON | 26 ns | 1.9V @ 15V, 30A | 255 ns | Trench Field Stop | 400V, 30A, 4.3 Ω, 15V | 165nC | 90A | 12ns/155ns | 525μJ (on), 700μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT150GN60LDQ4G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | No | HIGH RELIABILITY | TO-264-3, TO-264AA | Through Hole | -55°C~175°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 536W | 536W | 1 | COLLECTOR | N-CHANNEL | Single | 220A | 600V | 600V | POWER CONTROL | SILICON | 154 ns | 1.85V @ 15V, 150A | 575 ns | Trench Field Stop | 30V | 6.5V | 400V, 150A, 1 Ω, 15V | 970nC | 450A | 44ns/430ns | 8.81mJ (on), 4.295mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT65GP60B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 100A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | 833W | 1 | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 600V | POWER CONTROL | SILICON | 84 ns | 2.7V @ 15V, 65A | 219 ns | PT | 400V, 65A, 5 Ω, 15V | 210nC | 250A | 30ns/91ns | 605μJ (on), 896μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT80GA60LD40 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 26.49mm | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | 5.21mm | 20.5mm | Through Hole | 10.6g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 22 ns | 143A | 600V | 600V | POWER CONTROL | SILICON | 2V | 52 ns | 2.5V @ 15V, 47A | 326 ns | PT | 143A | 400V, 47A, 4.7 Ω, 15V | 230nC | 240A | 23ns/158ns | 840μJ (on), 751μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
APT45GR65B2DU30 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Bulk | 2001 | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 543W | 543W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | N-CHANNEL | 80 ns | 118A | 650V | 2.4V | POWER CONTROL | SILICON | 47 ns | 2.4V @ 15V, 45A | 175 ns | NPT | 433V, 45A, 4.3 Ω, 15V | 203nC | 224A | 15ns/100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT70GR65B2SCD30 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
22 Weeks | Through Hole | Bulk | 2001 | Obsolete | 1 (Unlimited) | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | 595W | 595W | T-MAX™ [B2] | 134A | 650V | 2.4V | 2.4V @ 15V, 70A | NPT | 650V | 134A | 433V, 70A, 4.3Ohm, 15V | 305nC | 260A | 19ns/170ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT15GP90BDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 43A | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 900V | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 43A | 900V | 900V | POWER CONTROL | SILICON | 23 ns | 3.9V @ 15V, 15A | 170 ns | PT | 600V, 15A, 4.3 Ω, 15V | 60nC | 60A | 9ns/33ns | 200μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT75GN60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 155A | No | HIGH RELIABILITY | TO-247-3 | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 536W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 47 ns | 155A | 600V | 600V | POWER CONTROL | 385 ns | SILICON | 95 ns | 1.85V @ 15V, 75A | 485 ns | Trench Field Stop | 30V | 6.5V | 400V, 75A, 1 Ω, 15V | 485nC | 225A | 47ns/385ns | 2500μJ (on), 2140μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GN60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 107A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~175°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 366W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 107A | 600V | 600V | POWER CONTROL | SILICON | 1.5V | 45 ns | 1.85V @ 15V, 50A | 400 ns | Trench Field Stop | 30V | 107A | 6.5V | 400V, 50A, 4.3 Ω, 15V | 325nC | 150A | 20ns/230ns | 1185μJ (on), 1565μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
APT45GR65SSCD10 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
22 Weeks | Surface Mount | Bulk | 2001 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | 543W | 543W | 80 ns | 118A | 650V | 2.4V | 2.4V @ 15V, 45A | NPT | 433V, 45A, 4.3 Ω, 15V | 203nC | 224A | 15ns/100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT70GR65B2DU40 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Bulk | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 595W | 595W | 134A | 650V | 2.4V | 2.4V @ 15V, 70A | NPT | 433V, 70A, 4.3 Ω, 15V | 305nC | 280A | 18ns/170ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT25GN120B2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 67A | No | 3 | HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 272W | 1 | COLLECTOR | N-CHANNEL | Single | 67A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 39 ns | 2.1V @ 15V, 25A | 560 ns | NPT, Trench Field Stop | 1200V | 6.5V | 800V, 25A, 4.3 Ω, 15V | 155nC | 75A | 22ns/280ns | 2.15μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT68GA60LD40 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 520W | 520W | 1 | COLLECTOR | N-CHANNEL | Single | 22 ns | 121A | 600V | 600V | POWER CONTROL | SILICON | 46 ns | 2.5V @ 15V, 40A | 304 ns | PT | 400V, 40A, 4.7 Ω, 15V | 198nC | 202A | 21ns/133ns | 715μJ (on), 607μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT64GA90LD30 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 26.49mm | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | 5.21mm | 20.5mm | Through Hole | 10.6g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 500W | 1 | COLLECTOR | N-CHANNEL | Single | 117A | 900V | 900V | POWER CONTROL | SILICON | 2.5V | 44 ns | 3.1V @ 15V, 38A | 352 ns | PT | 117A | 600V, 38A, 4.7 Ω, 15V | 162nC | 193A | 18ns/131ns | 1192μJ (on), 1088μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT70GR120B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
18 Weeks | Tube | 2001 | Active | 1 (Unlimited) | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 961W | TO-247 | 3.2V @ 15V, 70A | NPT | 1200V | 160A | 600V, 70A, 4.3Ohm, 15V | 544nC | 280A | 33ns/278ns | 3.82mJ (on), 2.58mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT15GT60BRDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 42A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 184W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 42A | 600V | 600V | POWER CONTROL | SILICON | 14 ns | 2.5V @ 15V, 15A | 225 ns | NPT | 30V | 5V | 400V, 15A, 10 Ω, 15V | 75nC | 45A | 6ns/105ns | 150μJ (on), 215μJ (off) |
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