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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Input Type | Capacitance | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Diode Element Material | Number of Elements | Diode Type | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Max Surge Current | Element Configuration | Turn On Delay Time | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Recovery Time | Reverse Voltage (DC) | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT15GT120BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 36A | No | ULTRA FAST | TO-247-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 36A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 21 ns | 3.6V @ 15V, 15A | 137 ns | NPT | 30V | 1200V | 6.5V | 800V, 15A, 5 Ω, 15V | 105nC | 45A | 10ns/85ns | 585μJ (on), 260μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT13GP120BDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 41A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 41A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 21 ns | 3.9V @ 15V, 13A | 270 ns | PT | 20V | 1200V | 6V | 600V, 13A, 5 Ω, 15V | 55nC | 50A | 9ns/28ns | 115μJ (on), 165μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25GP90BDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | Not For New Designs | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Lead Free | 72A | TO-247-3 | Through Hole | -55°C~150°C TJ | 900V | Standard | 417W | 417W | Single | TO-247 [B] | 72A | 900V | 900V | 3.9V @ 15V, 25A | PT | 900V | 72A | 600V, 40A, 4.3Ohm, 15V | 110nC | 110A | 13ns/55ns | 370μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25GP120BDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 32 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 69A | No | LOW CONDUCTION LOSS | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 417W | 1 | COLLECTOR | N-CHANNEL | Single | 69A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.3V | 26 ns | 3.9V @ 15V, 25A | 200 ns | PT | 30V | 1200V | 69A | 6V | 600V, 25A, 5 Ω, 15V | 110nC | 90A | 12ns/70ns | 500μJ (on), 440μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| APT100GN120B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | No | 3 | HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | Insulated Gate BIP Transistors | 960W | 960W | 1 | COLLECTOR | N-CHANNEL | Single | 50 ns | 245A | 1.2kV | 1.2kV | POWER CONTROL | 615 ns | SILICON | 100 ns | 2.1V @ 15V, 100A | 935 ns | Trench Field Stop | 1200V | 6.5V | 800V, 100A, 1 Ω, 15V | 540nC | 300A | 50ns/615ns | 11mJ (on), 9.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT80GA90B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 32 Weeks | Through Hole | Tube | 1999 | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 625W | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 145A | 900V | 900V | POWER CONTROL | SILICON | 49 ns | 3.1V @ 15V, 47A | 320 ns | PT | 30V | 6V | 600V, 47A, 4.7 Ω, 15V | 200nC | 239A | 18ns/149ns | 1652μJ (on), 1389μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT85GR120B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 962W | 962W | Single | 170A | 1.2kV | 1.2kV | 3.2V @ 15V, 85A | NPT | 1200V | 600V, 85A, 4.3 Ω, 15V | 660nC | 340A | 43ns/300ns | 6mJ (on), 3.8mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT36GA60B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
29 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e3 | PURE MATTE TIN | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 290W | 290W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 65A | 600V | 600V | POWER CONTROL | SILICON | 29 ns | 2.5V @ 15V, 20A | 262 ns | PT | 30V | 6V | 400V, 20A, 10 Ω, 15V | 102nC | 109A | 16ns/122ns | 307μJ (on), 254μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT43GA90B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSSES | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 337W | 337W | 1 | COLLECTOR | N-CHANNEL | Single | 78A | 900V | 900V | POWER CONTROL | SILICON | 28 ns | 3.1V @ 15V, 25A | 246 ns | PT | 600V, 25A, 4.7 Ω, 15V | 116nC | 129A | 12ns/82ns | 875μJ (on), 425μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GS60BRDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | no | Active | 1 (Unlimited) | RoHS Compliant | No | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 250W | 250W | Single | 25 ns | 54A | 600V | 600V | 3.15V @ 15V, 30A | NPT | 400V, 30A, 9.1 Ω, 15V | 145nC | 113A | 16ns/360ns | 570μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20GT60BRDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 43A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 174W | 1 | COLLECTOR | N-CHANNEL | Single | 43A | 600V | 600V | POWER CONTROL | SILICON | 17 ns | 2.5V @ 15V, 20A | 160 ns | NPT | 30V | 5V | 400V, 20A, 5 Ω, 15V | 100nC | 80A | 8ns/80ns | 215μJ (on), 245μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT45GR65B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 35 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | 150°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | Standard | Insulated Gate BIP Transistors | 357W | N-CHANNEL | Single | 92A | 650V | 2.4V | 1.9V | 2.4V @ 15V, 45A | NPT | 30V | 118A | 6.5V | 433V, 45A, 4.3 Ω, 15V | 203nC | 168A | 15ns/100ns | 900μJ (on), 580μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT40GR120B2D30 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | 21.46mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 500W | N-CHANNEL | Single | 22 ns | 88A | 1.2kV | 1.2kV | 163 ns | 2.5V | 3.2V @ 15V, 40A | NPT | 1200V | 88A | 6V | 600V, 40A, 4.3 Ω, 15V | 210nC | 160A | 22ns/163ns | 1.38mJ (on), 906μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25GR120S | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Bulk | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | 521W | N-CHANNEL | 75A | 1.2kV | 3.2V | 3.2V @ 15V, 25A | NPT | 30V | 1200V | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT35GN120L2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | yes | Active | 1 (Unlimited) | 3 | EAR99 | 26.49mm | RoHS Compliant | Lead Free | 94A | No | 3 | HIGH RELIABILITY | TO-264-3, TO-264AA | 5.21mm | 20.5mm | Through Hole | 10.6g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 379W | 1 | COLLECTOR | N-CHANNEL | Single | 94A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 1.7V | 46 ns | 2.1V @ 15V, 35A | 465 ns | NPT, Trench Field Stop | 1200V | 94A | 6.5V | 800V, 35A, 2.2 Ω, 15V | 220nC | 105A | 24ns/300ns | 2.315mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT68GA60B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e3 | PURE MATTE TIN | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 520W | 520W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 121A | 600V | 600V | POWER CONTROL | SILICON | 46 ns | 2.5V @ 15V, 40A | 304 ns | PT | 30V | 6V | 400V, 40A, 4.7 Ω, 15V | 298nC | 202A | 21ns/133ns | 715μJ (on), 607μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTDF400AK20G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Bulk | 2006 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | RoHS Compliant | No | 4 | LP4 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 3 | R-XUFM-X3 | Rectifier Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY POWER | 1 | 500A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | 750μA @ 200V | 1.1V @ 400A | 200V | 500A | 750μA | 200V | 3kA | 1 Pair Series Connection | 60 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTDF400AA120G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Bulk | yes | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -40°C | RoHS Compliant | No | 4 | LP4 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 3 | R-XUFM-X3 | Rectifier Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY POWER | 1 | 470A | 3V | ISOLATED | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1200V | 3V @ 400A | 1.2kV | 470A | 250μA | 1.2kV | 3kA | 1 Pair Common Anode | 1200V | 385 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5962-1621001QXC | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tray | Active | 20-CSOIC (0.295, 7.50mm Width) | Surface Mount | Standard | 20-CSOIC | Standard Recovery >500ns, > 200mA (Io) | 100μA @ 700mA | 2.08V @ 700mA | -55°C~150°C | 8 Pair Series Connection | 140V | 1A DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S8-4148E3/TR13 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | Active | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | S8-4148 | Standard | 400mA | 8-SOIC | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 1.2V @ 100mA | -55°C~150°C | 75V | 400mA | 500nA | 100V | 2A | 4 Independent | 75V | 400mA DC | 5 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S8-4150E3/TR7 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | Active | 1 (Unlimited) | RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | S8-4150 | Standard | 8-SOIC | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 1V @ 200mA | -55°C~150°C | 50V | 400mA | 4 Independent | 50V | 400mA DC | 4 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S16-4148/TR13 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | no | Active | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 16 | 16-SOIC (0.154, 3.90mm Width) | Surface Mount | NOT SPECIFIED | NOT SPECIFIED | S16-4148 | Standard | 1.2V | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 1.2V @ 100mA | -55°C~150°C | 75V | 400mA | 2A | 8 Independent | 400mA DC | 5 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST30100 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Radial, Through Hole | Bulk | 1997 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Contains Lead | 30A | LOW POWER LOSS | TO-3P-3 Full Pack | unknown | Through Hole | 100V | 550pF | 8541.10.00.80 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | 175°C | Rectifier Diodes | Not Qualified | SILICON | 2 | Schottky | EFFICIENCY | 1 | 350A | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 100V | 850mV @ 15A | -55°C~175°C | 100V | 15A | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S16-4148/TR7 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | Active | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | No | 16 | 16-SOIC (0.154, 3.90mm Width) | Surface Mount | S16-4148 | Standard | 100mA | 1.2V | 16-SOIC | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 1.2V @ 100mA | -55°C~150°C | 75V | 400mA | 100nA | 100V | 2A | 8 Independent | 75V | 400mA DC | 5 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S8-4148/TR13 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | Active | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | S8-4148 | Standard | 400mA | 8-SOIC | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 1.2V @ 100mA | -55°C~150°C | 75V | 400mA | 500nA | 100V | 2A | 4 Independent | 75V | 400mA DC | 5 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S16-4150E3/TR7 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | Active | 1 (Unlimited) | RoHS Compliant | 16 | 16-SOIC (0.154, 3.90mm Width) | Surface Mount | S16-4150 | Standard | 16-SOIC | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 1V @ 200mA | -55°C~150°C | 50V | 400mA | 8 Independent | 50V | 400mA DC | 4 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S16-4148E3/TR13 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | yes | Active | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | No | 16 | 16-SOIC (0.154, 3.90mm Width) | Surface Mount | S16-4148 | Standard | 100mA | 1.2V | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 1.2V @ 100mA | -55°C~150°C | 75V | 400mA | 100nA | 100V | 2A | 8 Independent | 400mA DC | 5 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S16-4150E3/TR13 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Cut Tape (CT) | 1998 | Discontinued | 1 (Unlimited) | RoHS Compliant | 16 | 16-SOIC (0.154, 3.90mm Width) | Surface Mount | S16-4150 | Standard | 16-SOIC | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 1V @ 200mA | -55°C~150°C | 50V | 400mA | 8 Independent | 75V | 400mA | 4 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT2X60DQ100J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | yes | Active | 1 (Unlimited) | 4 | EAR99 | 175°C | -55°C | RoHS Compliant | Lead Free | 60A | No | 4 | SOT-227-4, miniBLOC | Chassis Mount | 1kV | AVALANCHE | UPPER | UNSPECIFIED | 4 | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 60A | 2.8V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1000V | 2.8V @ 60A | 1kV | 60A | 100μA | 1kV | 540A | 2 Independent | 1000V | 235 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT2X30D100J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | 1997 | yes | Active | 1 (Unlimited) | 4 | 175°C | -55°C | 38.2mm | RoHS Compliant | Lead Free | 28A | No | 4 | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | 1kV | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Other Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 28A | 2.3V | ISOLATED | 210A | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1000V | 2.3V @ 30A | -55°C~175°C | 1kV | 28A | 250μA | 1kV | 210A | 2 Independent | 1000V | 290 ns | 1kV | 290 ns |