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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SPB21N50C3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2005 | CoolMOS™ | no | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH VOLTAGE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 208W Tc | SWITCHING | 0.19Ohm | 500V | SILICON | N-Channel | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 2400pF @ 25V | 95nC @ 10V | 21A | 21A Tc | 560V | 63A | 690 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS23N20DTRLP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 24A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 100mOhm | Surface Mount | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 14 ns | 5.5V | 3.8W Ta 170W Tc | 24A | SWITCHING | 26 ns | SILICON | N-Channel | 100m Ω @ 14A, 10V | 5.5V @ 250μA | 1960pF @ 25V | 86nC @ 10V | 32ns | 16 ns | 30V | 200V | 200V | 5.5 V | 24A Tc | 96A | 250 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IPL60R075CFD7AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ CFD7 | Active | 3 (168 Hours) | 4 | EAR99 | ROHS3 Compliant | 4-PowerTSFN | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PSSO-N4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 189W Tc | SWITCHING | 0.075Ohm | 600V | SILICON | N-Channel | 75m Ω @ 15.1A, 10V | 4.5V @ 760μA | 2721pF @ 400V | 67nC @ 10V | 33A | 33A Tc | 650V | 129A | 151 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ065N03LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 2V | 30V | 2.1W Ta 26W Tc | 12A | SWITCHING | SILICON | N-Channel | 6.5m Ω @ 20A, 10V | 2V @ 250μA | 670pF @ 15V | 10nC @ 10V | 3.4ns | 20V | 12A Ta 40A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD25N06S4L30ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 60V | 29W Tc | 25A | N-Channel | 30m Ω @ 25A, 10V | 2.2V @ 8μA | 1220pF @ 25V | 16.3nC @ 10V | 25A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR024NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 17A | No | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 75mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 38W | 4.9 ns | 4V | 45W Tc | 83 ns | 17A | 175°C | SWITCHING | 19 ns | SILICON | N-Channel | 75m Ω @ 10A, 10V | 4V @ 250μA | 370pF @ 25V | 20nC @ 10V | 34ns | 27 ns | 20V | 55V | 55V | 4 V | 17A Tc | 68A | 10V | ±20V | |||||||||||||||||||||||||||||||
| IPZ40N04S5L7R4ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | 1.15mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-N3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 34W | 2 ns | 40V | 34W Tc | 40A | 175°C | 6 ns | SILICON | N-Channel | 7.4m Ω @ 20A, 10V | 2V @ 10μA | 920pF @ 25V | 17nC @ 10V | 16V | 40V | 40A Tc | 24 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| BSZ040N04LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Contains Lead | Tin | No | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 69W | 8.5 ns | 40V | 3.3mOhm | PG-TSDSON-8 | 2.1W Ta 69W Tc | 40A | 33 ns | N-Channel | 4mOhm @ 20A, 10V | 2V @ 36μA | 5100pF @ 20V | 64nC @ 10V | 4.8ns | 5.4 ns | 20V | 18A Ta 40A Tc | 40V | 5.1nF | 4.5V 10V | ±20V | 4 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2405TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2000 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W Tc | SWITCHING | 0.016Ohm | 55V | SILICON | N-Channel | 16m Ω @ 34A, 10V | 4V @ 250μA | 2430pF @ 25V | 110nC @ 10V | 30A | 56A Tc | 55V | 220A | 130 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5300TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6mm | ROHS3 Compliant | Lead Free | No | 8 | HIGH RELIABILITY | 8-PowerVDFN | No SVHC | 850μm | 5mm | 1.4MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 26 ns | 1.8V | 3.6W Ta 250W Tc | 100A | SWITCHING | 31 ns | SILICON | N-Channel | 1.4m Ω @ 50A, 10V | 2.35V @ 150μA | 7200pF @ 15V | 120nC @ 10V | 30ns | 13 ns | 20V | 30V | 40A | 40A Ta 100A Tc | 400A | 420 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSC010NE2LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Tin | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 96W | 800μOhm | PG-TDSON-8-7 | 2.5W Ta 96W Tc | 39A | N-Channel | 1mOhm @ 30A, 10V | 2V @ 250μA | 4700pF @ 12V | 64nC @ 10V | 6ns | 20V | 39A Ta 100A Tc | 25V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9332TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 15 ns | 2.5W Ta | 9.8A | SWITCHING | 73 ns | SILICON | P-Channel | 17.5m Ω @ 9.8A, 10V | 2.4V @ 25μA | 1270pF @ 25V | 41nC @ 10V | 47ns | 58 ns | 20V | -30V | 9.8A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R600P7SAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | 30W Tc | SWITCHING | 0.6Ohm | 600V | SILICON | N-Channel | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 363pF @ 400V | 9nC @ 10V | 6A Tc | 600V | 16A | 17 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN70R450P7SATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-261-3 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 7.1W Tc | SWITCHING | 0.45Ohm | 700V | SILICON | N-Channel | 450m Ω @ 2.3A, 10V | 3.5V @ 120μA | 424pF @ 400V | 13.1nC @ 10V | 10A Tc | 700V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP321PH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | SIPMOS™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | Tin | 4 | AVALANCHE RATED | TO-261-4, TO-261AA | 3.5mm | 1.6mm | Surface Mount | 250.212891mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | 1 | 1 | DRAIN | Halogen Free | Single | 5.9 ns | -100V | 1.8W Ta | 980mA | 0.9Ohm | 16.5 ns | SILICON | P-Channel | 900m Ω @ 980mA, 10V | 4V @ 380μA | 319pF @ 25V | 12nC @ 10V | 4.4ns | 8.5 ns | 20V | 0.98A | 980mA Tc | 100V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSZ040N06LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-N3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 2.1W | 8.5 ns | 3.3mOhm | 17A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 25.6 ns | 20V | 60V | 60V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N08N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 100W | 14 ns | 80V | 100W Tc | 70A | SWITCHING | 22 ns | SILICON | N-Channel | 10m Ω @ 46A, 10V | 3.5V @ 46μA | 2410pF @ 40V | 35nC @ 10V | 46ns | 5 ns | 20V | 70A Tc | 280A | 90 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPD30N08S222ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 13 ns | 75V | 136W Tc | 30A | 0.0215Ohm | 33 ns | SILICON | N-Channel | 21.5m Ω @ 50A, 10V | 4V @ 80μA | 1400pF @ 25V | 57nC @ 10V | 30ns | 20 ns | 20V | 30A Tc | 120A | 240 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA60R600P6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 11 ns | 600V | 28W Tc | 7.3A | SWITCHING | 0.6Ohm | 33 ns | SILICON | N-Channel | 600m Ω @ 2.4A, 10V | 4.5V @ 200μA | 557pF @ 100V | 12nC @ 10V | 7ns | 14 ns | 20V | 4.9A Tc | 18A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7537PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 230W | 15 ns | 3.7V | 230W Tc | 173A | SWITCHING | 82 ns | SILICON | N-Channel | 3.3m Ω @ 100A, 10V | 3.7V @ 150μA | 7020pF @ 25V | 210nC @ 10V | 105ns | 84 ns | 20V | 60V | 173A Tc | 700A | 554 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFB7440GPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2008 | HEXFET®, StrongIRFET™ | Not For New Designs | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 208W Tc | 120A | N-Channel | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 4730pF @ 25V | 135nC @ 10V | 120A Tc | 40V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S407ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | 10mm | ROHS3 Compliant | Lead Free | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | 1.946308g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Single | 79W | 15 ns | 60V | 7.1mOhm | 79W Tc | 80A | 23 ns | SILICON | N-Channel | 4V @ 40μA | 4500pF @ 25V | 56nC @ 10V | 3ns | 5 ns | 20V | 80A Tc | 320A | 10V | ±20V | 7.1 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| IRFB41N15DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2003 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Contains Lead, Lead Free | 41A | No | 3 | AVALANCHE RATED | TO-220-3 | No SVHC | 8.763mm | 4.69mm | Through Hole | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 200W | 16 ns | 5.5V | 200W Tc | 260 ns | 41A | SWITCHING | 0.045Ohm | 25 ns | SILICON | N-Channel | 45m Ω @ 25A, 10V | 5.5V @ 250μA | 2520pF @ 25V | 110nC @ 10V | 63ns | 14 ns | 30V | 150V | 150V | 5.5 V | 41A Tc | 470 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IPP052N08N5AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | TO-220-3 | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | TO-220AB | DRAIN | Halogen Free | Single | 17 ns | 80V | 125W Tc | 80A | SWITCHING | 0.0052Ohm | 27 ns | SILICON | N-Channel | 5.2m Ω @ 80A, 10V | 3.8V @ 66μA | 3770pF @ 40V | 53nC @ 10V | 7ns | 7 ns | 20V | 80A Tc | 320A | 84 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA65R190C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 11 ns | 650V | 30W Tc | 8A | SWITCHING | 0.19Ohm | 54 ns | SILICON | N-Channel | 190m Ω @ 5.7A, 10V | 4V @ 290μA | 1150pF @ 400V | 23nC @ 10V | 9 ns | 20V | 8A | 8A Tc | 49A | 57 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R150CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 12.4 ns | 650V | 195.3W Tc | 22.4A | SWITCHING | 52.8 ns | SILICON | N-Channel | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 2340pF @ 100V | 86nC @ 10V | 7.6ns | 5.6 ns | 30V | 22.4A Tc | 72A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPZ65R045C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | 4 | 16.13mm | ROHS3 Compliant | Lead Free | 4 | TO-247-4 | 21.1mm | 5.21mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | Halogen Free | Single | 227W | 20 ns | 650V | 227W Tc | 46A | SWITCHING | 82 ns | SILICON | N-Channel | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 4340pF @ 400V | 93nC @ 10V | 14ns | 7 ns | 20V | 650V | 46A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSC886N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-N5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W | 4.2 ns | 2.2V | 2.5W Ta 39W Tc | 65A | SWITCHING | 0.0092Ohm | 30V | 18 ns | SILICON | N-Channel | 6m Ω @ 30A, 10V | 2.2V @ 250μA | 2100pF @ 15V | 26nC @ 10V | 3.2ns | 3 ns | 20V | 13A Ta 65A Tc | 30V | 260A | 20 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSZ050N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 6.7 ns | 30V | 2.1W Ta 48W Tc | 15A | SWITCHING | 0.0057Ohm | 26 ns | SILICON | N-Channel | 4.5m Ω @ 20A, 10V | 2V @ 250μA | 3600pF @ 15V | 46nC @ 10V | 4.2ns | 3.2 ns | 20V | 40A | 15A Ta 40A Tc | 70 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSZ018NE2LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | ULTRA LOW RESISTANCE | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 2V | 25V | 2.1W Ta 69W Tc | 23A | SWITCHING | 0.0024Ohm | SILICON | N-Channel | 1.8m Ω @ 30A, 10V | 2V @ 250μA | 2800pF @ 12V | 39nC @ 10V | 4.4ns | 20V | 23A Ta 40A Tc | 4.5V 10V | ±20V |