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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRF6637TRPBF IRF6637TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant Lead Free 14A No 5 DirectFET™ Isometric MP 506μm 5.05mm Surface Mount -40°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 12 ns 2.3W Ta 42W Tc 14mA SWITCHING 0.0077Ohm 14 ns SILICON N-Channel 7.7m Ω @ 14A, 10V 2.35V @ 250μA 1330pF @ 15V 17nC @ 4.5V 15ns 3.8 ns 20V 30V 14A Ta 59A Tc 4.5V 10V ±20V
    IPA65R190E6XKSA1 IPA65R190E6XKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 34W 12 ns 650V 34W Tc 20.8A SWITCHING 112 ns SILICON N-Channel 190m Ω @ 7.3A, 10V 3.5V @ 730μA 1620pF @ 100V 73nC @ 10V 11ns 10 ns 20V 20.2A Tc 66A 485 mJ 10V ±20V
    AUIRF1405ZSTRL AUIRF1405ZSTRL Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 230W 18 ns 230W Tc 150A SWITCHING 0.0049Ohm 48 ns SILICON N-Channel 4.9m Ω @ 75A, 10V 4V @ 250μA 4780pF @ 25V 180nC @ 10V 110ns 82 ns 20V 55V 150A Tc 600A 270 mJ 10V ±20V
    IPP100N08S207AKSA1 IPP100N08S207AKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2006 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead No 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 26 ns 75V 300W Tc 100A 61 ns SILICON N-Channel 7.1m Ω @ 80A, 10V 4V @ 250μA 4700pF @ 25V 200nC @ 10V 51ns 30 ns 20V 100A Tc 400A 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ Active 2A (4 Weeks) 4 ROHS3 Compliant Contains Lead 4 4-PowerTSFN not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NO LEAD NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 650V 195W Tc 21.3A SWITCHING 0.165Ohm SILICON N-Channel 165m Ω @ 9.3A, 10V 4.5V @ 900μA 2340pF @ 100V 86nC @ 10V 21.3A Tc 67A 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2009 Automotive, AEC-Q101, OptiMOS™ yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant 3 TO-220-3 not_compliant Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 30 ns 60V 250W Tc 120A 0.0024Ohm 60 ns SILICON N-Channel 2.4m Ω @ 100A, 10V 4V @ 200μA 21900pF @ 25V 270nC @ 10V 5ns 15 ns 20V 120A Tc 480A 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 230W 15 ns 230W Tc 120A SWITCHING 0.0042Ohm 40 ns SILICON N-Channel 4.2m Ω @ 75A, 10V 4V @ 150μA 4520pF @ 50V 125nC @ 10V 76ns 77 ns 20V 60V 120A Tc 620A 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.82mm 3.3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300W 150 ns 2V 300W Tc 160A SWITCHING 93 ns SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 7960pF @ 25V 290nC @ 10V 20ns 87 ns 20V 55V 160A Tc 890A 940 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2006 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB 19 ns 55V 300W Tc 80A 0.0065Ohm 75 ns SILICON N-Channel 5m Ω @ 80A, 10V 2V @ 250μA 5000pF @ 25V 190nC @ 10V 23ns 22 ns 20V 80A Tc 700 mJ 4.5V 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 290W 24 ns 2V 290W Tc 160A SWITCHING 0.0024Ohm 48 ns SILICON N-Channel 2.4m Ω @ 75A, 10V 4V @ 250μA 6320pF @ 25V 240nC @ 10V 100ns 37 ns 20V 30V 2 V 160A Tc 820 mJ 10V ±20V
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    		 download 16 Weeks Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W Tc SWITCHING 0.0031Ohm 40V SILICON N-Channel 3.1m Ω @ 75A, 10V 2.7V @ 250μA 5080pF @ 25V 110nC @ 5V 160A 160A Tc 40V 790A 490 mJ 4.5V 10V ±16V
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    		 download 16 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 16.51mm 4.72mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 330W 16 ns 2V 330W Tc 140A SWITCHING 0.008Ohm 43 ns SILICON N-Channel 8m Ω @ 75A, 10V 4V @ 250μA 3650pF @ 25V 150nC @ 10V 88ns 34 ns 20V 55V 140A Tc 560A 860 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.9982mm ROHS3 Compliant Lead Free 206A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-273AA 15mm 5mm 3.7MOhm Through Hole -40°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 DRAIN Single 300W 17 ns 300W Tc 206A SWITCHING 72 ns SILICON N-Channel 3.7m Ω @ 95A, 10V 4V @ 250μA 7360pF @ 25V 200nC @ 10V 140ns 26 ns 20V 40V 95A 206A Tc 650A 480 mJ 10V ±20V
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    		 download 10 Weeks Through Hole Tube 1999 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE IPP100N06S2L-05 e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 TO-220AB Halogen Free Single 300W 18 ns 55V 300W Tc 100A 0.0059Ohm 98 ns SILICON N-Channel 4.7m Ω @ 80A, 10V 2V @ 250μA 5660pF @ 25V 230nC @ 10V 25ns 24 ns 20V 55V 100A Tc 400A 810 mJ 4.5V 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2007 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 192W 35 ns 500V 192W Tc 23A SWITCHING 80 ns SILICON N-Channel 140m Ω @ 14A, 10V 3.5V @ 930μA 2540pF @ 100V 64nC @ 10V 14ns 8 ns 20V 23A Tc 550V 56A 10V ±20V
    IPI100N10S305AKSA1 IPI100N10S305AKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE Halogen Free 300W 34 ns 100V 300W Tc 100A 60 ns SILICON N-Channel 5.1m Ω @ 100A, 10V 4V @ 240μA 11570pF @ 25V 176nC @ 10V 17ns 20 ns 20V 100A Tc 400A 10V ±20V
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    		 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFS8407 YES FET General Purpose Power Single 230W Tc N-Channel 1.8m Ω @ 100A, 10V 4V @ 150μA 7330pF @ 25V 225nC @ 10V 195A 195A Tc 40V 10V ±20V
    IRFSL38N20DPBF IRFSL38N20DPBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 175°C -55°C 10.67mm ROHS3 Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 300W 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W 16 ns 5V 44A SWITCHING 0.054Ohm 200V 29 ns N-Channel 54m Ω @ 26A, 10V 5V @ 250μA 2900pF @ 25V 91nC @ 10V 95ns 47 ns 30V 43A Tc 200V 460 mJ
    SPI21N50C3XKSA1 SPI21N50C3XKSA1 Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2005 CoolMOS™ Not For New Designs 1 (Unlimited) 150°C -55°C 10.36mm ROHS3 Compliant Lead Free 11.6A 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.45mm 4.52mm Through Hole -55°C~150°C TJ 560V MOSFET (Metal Oxide) Halogen Free Single 208W 10 ns 500V 190mOhm PG-TO262-3-1 208W Tc 21A 67 ns N-Channel 190mOhm @ 13.1A, 10V 3.9V @ 1mA 2400pF @ 25V 95nC @ 10V 5ns 4.5 ns 20V 500V 21A Tc 560V 2.4nF 10V ±20V 190 mΩ
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    		 download 16 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.6228mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 300W 13 ns 2V 300W Tc 195A SWITCHING 0.002Ohm 130 ns SILICON N-Channel 2m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 120ns 130 ns 20V 40V 270A 195A Tc 540 mJ 10V ±20V
    IPB65R150CFDAATMA1 IPB65R150CFDAATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 Automotive, AEC-Q101, CoolMOS™ no Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 650V 195.3W Tc 22.4A SWITCHING 0.15Ohm SILICON N-Channel 150m Ω @ 9.3A, 10V 4.5V @ 900μA 2340pF @ 100V 86nC @ 10V 22.4A Tc 72A 614 mJ 10V ±20V
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    		 download Cut Tape (CT) 1999 HEXFET® Obsolete 1 (Unlimited) 4 EAR99 Non-RoHS Compliant HIGH RELIABILITY TO-261-4, TO-261AA Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G4 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1W SWITCHING 0.2Ohm 100V SILICON N-Channel 200m Ω @ 1.6A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 1.6A 1.6A Ta 100V
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    		 Tube 1999 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) SINGLE GULL WING 225 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 45W Tc SWITCHING 0.175Ohm 55V SILICON P-Channel 175m Ω @ 7.2A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 12A 12A Tc 55V 48A 96 mJ 10V ±20V
    IRLR3636TRLPBF IRLR3636TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 TO-252AA DRAIN Single 143W 143W Tc 50A SWITCHING 0.0083Ohm SILICON N-Channel 6.8m Ω @ 50A, 10V 2.5V @ 100μA 3779pF @ 50V 49nC @ 4.5V 216ns 69 ns 60V 50A Tc 396A 170 mJ 4.5V 10V ±16V
    IPB45P03P4L11ATMA1 IPB45P03P4L11ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2008 Automotive, AEC-Q101, OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 10mm ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 58W 7 ns -30V 58W Tc -45A 0.0111Ohm 45 ns SILICON P-Channel 10.8m Ω @ 45A, 10V 2V @ 85μA 3770pF @ 25V 55nC @ 10V 3ns 14 ns 5V -30V 45A Tc 30V 180A 110 mJ 4.5V 10V +5V, -16V
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    AUIRFU4292 AUIRFU4292 Infineon Technologies $0.00
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    		 download 26 Weeks Through Hole Tube 2015 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 100W 11 ns 100W Tc 9.3A 16 ns N-Channel 345m Ω @ 5.6A, 10V 5V @ 50μA 705pF @ 25V 20nC @ 10V 15ns 8.4 ns 20V 250V 9.3A Tc 10V ±20V
    IPP80N04S404AKSA1 IPP80N04S404AKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2010 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 10 ns 40V 71W Tc 80A 0.0046Ohm 9 ns SILICON N-Channel 4.6m Ω @ 80A, 10V 4V @ 35μA 3440pF @ 25V 43nC @ 10V 12ns 20V 80A Tc 100 mJ 10V ±20V
    IRF5305STRRPBF IRF5305STRRPBF Infineon Technologies $0.00
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    		 download 10 Weeks Tape & Reel (TR) 2005 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 110W Tc SWITCHING 0.06Ohm 55V SILICON P-Channel 60m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 31A 31A Tc 55V 110A 280 mJ 10V ±20V
    AUIRFSL6535 AUIRFSL6535 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2015 Automotive, AEC-Q101, HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Single 210W Tc 19A N-Channel 185m Ω @ 11A, 10V 5V @ 150μA 2340pF @ 25V 57nC @ 10V 19A Tc 300V 10V ±20V