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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFI530NPBF IRFI530NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free 11A No 3 AVALANCHE RATED TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 110mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB ISOLATED Single 33W 6.4 ns 4V 41W Tc 190 ns 12A SWITCHING 2.5kV 37 ns SILICON N-Channel 110m Ω @ 6.6A, 10V 4V @ 250μA 640pF @ 25V 44nC @ 10V 27ns 25 ns 20V 100V 100V 4 V 12A Tc 60A 10V ±20V
    IRF60B217 IRF60B217 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2013 StrongIRFET™ Active Not Applicable 3 EAR99 ROHS3 Compliant Lead Free TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 83W Tc 60A SWITCHING 0.009Ohm 60V SILICON N-Channel 9m Ω @ 36A, 10V 3.7V @ 50μA 2230pF @ 25V 66nC @ 10V 60A Tc 60V 225A 124 mJ 6V 10V ±20V
    IRF640NLPBF IRF640NLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 18A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 15.01mm 4.826mm 150mOhm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 1 FET General Purpose Power 1 DRAIN Single 150W 10 ns 4V 150W Tc 18A 175°C SWITCHING 23 ns SILICON N-Channel 150m Ω @ 11A, 10V 4V @ 250μA 1160pF @ 25V 67nC @ 10V 19ns 5.5 ns 20V 200V 4 V 18A Tc 72A 247 mJ 10V ±20V
    IRF2805PBF IRF2805PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.826mm 4.7Ohm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 330W 14 ns 4V 330W Tc 120 ns 75A SWITCHING 68 ns SILICON N-Channel 4.7m Ω @ 104A, 10V 4V @ 250μA 5110pF @ 25V 230nC @ 10V 120ns 110 ns 20V 55V 55V 4 V 75A Tc 700A 10V ±20V
    AUIRFS8407-7P AUIRFS8407-7P Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tube 2010 HEXFET® Not For New Designs 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant No 7 TO-263-7, D2Pak (6 Leads + Tab) No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) IRFS8407 1 FET General Purpose Power Single 231W 18 ns 3.9V 231W Tc 240A 78 ns N-Channel 1.3m Ω @ 100A, 10V 3.9V @ 150μA 7437pF @ 25V 225nC @ 10V 62ns 51 ns 20V 2.2 V 240A Tc 40V 10V ±20V
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    		 download 16 Weeks Surface Mount Tube 2015 Automotive, AEC-Q101, HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 FAST SWITCHING, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 375mW 375W Tc 72A SWITCHING 0.022Ohm 200V SILICON N-Channel 22m Ω @ 44A, 10V 5V @ 250μA 5380pF @ 50V 150nC @ 10V 20V 72A Tc 200V 250 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 2MOhm Surface Mount -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 DRAIN Single 300W 13 ns 4V 300W Tc 84 ns 75A 175°C SWITCHING 130 ns SILICON N-Channel 2m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 120ns 130 ns 20V 40V 270A 75A Tc 540 mJ 10V ±20V
    IPA65R650CEXKSA1 IPA65R650CEXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2013 CoolMOS™ CE yes Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-220-3 Full Pack Through Hole 6.000006g -40°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 Halogen Free 650V 28W Tc 7A N-Channel 650m Ω @ 2.1A, 10V 3.5V @ 210μA 440pF @ 100V 23nC @ 10V 7A Tc 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.017mm 4.826mm 4.9Ohm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230W 18 ns 4V 230W Tc 75A SWITCHING 48 ns SILICON N-Channel 4.9m Ω @ 75A, 10V 4V @ 250μA 4780pF @ 25V 180nC @ 10V 110ns 82 ns 20V 55V 55V 4 V 75A Tc 600A 420 mJ 10V ±20V
    IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2012 OptiMOS™ Active 1 (Unlimited) 175°C -55°C ROHS3 Compliant Contains Lead 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) Halogen Free Single 4.4 ns 250V 100mOhm PG-TO220-3-1 107W Tc 17A 7.5 ns N-Channel 100mOhm @ 17A, 10V 4V @ 54μA 1500pF @ 25V 19nC @ 10V 3.7ns 1.2 ns 20V 17A Tc 250V 1.5nF 10V ±20V 100 mΩ
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    		 download 18 Weeks Tube 2018 CoolMOS™ P7 Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant TO-247-4 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T4 1 SINGLE WITH BUILT-IN DIODE 164W Tc SWITCHING 0.06Ohm 600V SILICON N-Channel 60m Ω @ 15.9A, 10V 4V @ 800μA 2895pF @ 400V 67nC @ 10V 48A Tc 600V 151A 159 mJ 10V ±20V
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    		 download 18 Weeks Tube OptiMOS™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 178W Tc N-Channel 55m Ω @ 18A, 10V 4.5V @ 900μA 3194pF @ 400V 79nC @ 10V 38A Tc 600V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 7 ULTRA LOW RESISTANCE DirectFET™ Isometric MT No SVHC Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N3 1 FET General Purpose Power 1 DRAIN Single 2.8W 20 ns 1.7V 2.8W Ta 89W Tc 34A SWITCHING 25 ns SILICON N-Channel 1.5m Ω @ 32A, 10V 2.35V @ 150μA 6140pF @ 15V 77nC @ 4.5V 30ns 17 ns 20V 30V 34A Ta 192A Tc 250A 260 mJ 4.5V 10V ±20V
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    		 download 40 Weeks Surface Mount Tape & Reel (TR) 2005 CoolMOS™ Not For New Designs 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 4.5A 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ 650V MOSFET (Metal Oxide) 1 50W 6 ns 600V 850mOhm PG-TO252-3 50W Tc 4.5A 58.5 ns N-Channel 950mOhm @ 2.8A, 10V 3.9V @ 200μA 490pF @ 25V 25nC @ 10V 2.5ns 9.5 ns 20V 4.5A Tc 600V 490pF 10V ±20V 950 mΩ
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ yes Active 3 (168 Hours) 5 EAR99 ROHS3 Compliant Lead Free Tin 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-G5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free -1.5V -30V 1.79W Ta 12.6A SILICON P-Channel 8m Ω @ 14.9A, 10V 2V @ 250μA 5890pF @ 25V 136nC @ 10V 22ns 20V 12.6A Ta 30V 60A 4.5V 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE Halogen Free 14 ns 40V 94W Tc 80A SILICON N-Channel 3.3m Ω @ 80A, 10V 4V @ 53μA 5260pF @ 25V 66nC @ 10V 12ns 16 ns 20V 80A Tc 200 mJ 10V ±20V
    BSC014N04LSATMA1 BSC014N04LSATMA1 Infineon Technologies $0.00
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    		 download 39 Weeks Surface Mount Cut Tape (CT) 2012 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead Tin 8 ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 16 ns 40V 2.5W Ta 96W Tc 32A SWITCHING 0.0019Ohm 55 ns SILICON N-Channel 1.4m Ω @ 50A, 10V 2V @ 250μA 4300pF @ 20V 61nC @ 10V 56ns 11 ns 20V 32A Ta 100A Tc 400A 170 mJ 4.5V 10V ±20V
    IPD90N03S4L02ATMA1 IPD90N03S4L02ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2003 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 136W Tc 0.0022Ohm 30V SILICON N-Channel 2.2m Ω @ 90A, 10V 2.2V @ 90μA 9750pF @ 25V 140nC @ 10V 90A 90A Tc 30V 360A 240 mJ 4.5V 10V ±16V
    IPB100N04S4H2ATMA1 IPB100N04S4H2ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2012 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE Halogen Free 18 ns 40V 115W Tc 100A 0.0024Ohm 19 ns SILICON N-Channel 2.4m Ω @ 100A, 10V 4V @ 70μA 7180pF @ 25V 90nC @ 10V 13ns 21 ns 20V 100A Tc 400A 280 mJ 10V ±20V
    BSC017N04NSGATMA1 BSC017N04NSGATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2009 OptiMOS™ no Not For New Designs 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT 8 YES R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.5W Ta 139W Tc SWITCHING 0.0017Ohm 40V SILICON N-Channel 1.7m Ω @ 50A, 10V 4V @ 85μA 8800pF @ 20V 108nC @ 10V 100A 30A Ta 100A Tc 40V 400A 295 mJ 10V ±20V
    IPN80R750P7ATMA1 IPN80R750P7ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-261-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G3 1 SINGLE WITH BUILT-IN DIODE DRAIN 7.2W Tc SWITCHING 0.75Ohm 800V SILICON N-Channel 750m Ω @ 2.7A, 10V 3.5V @ 140μA 460pF @ 500V 17nC @ 10V 7A Tc 800V 10V ±20V
    IPSA70R2K0CEAKMA1 IPSA70R2K0CEAKMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 42W Tc SWITCHING 2Ohm 700V SILICON N-Channel 2 Ω @ 1A, 10V 3.5V @ 70μA 163pF @ 100V 7.8nC @ 10V 4A Tc 700V 6.3A 11 mJ 10V ±20V
    IPT60R102G7XTMA1 IPT60R102G7XTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ G7 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 8-PowerSFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE FLAT NOT SPECIFIED NOT SPECIFIED YES R-PSSO-F3 1 SINGLE WITH BUILT-IN DIODE DRAIN 141W Tc SWITCHING 0.102Ohm 600V SILICON N-Channel 102m Ω @ 7.8A, 10V 4V @ 390μA 1320pF @ 400V 34nC @ 10V 23A 23A Tc 650V 66A 78 mJ 10V ±20V
    AUIRF1404Z AUIRF1404Z Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant No 3 TO-220-3 No SVHC 9.017mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 200W 18 ns 2V 200W Tc 160A SWITCHING 36 ns SILICON N-Channel 3.7m Ω @ 75A, 10V 4V @ 250μA 4340pF @ 25V 150nC @ 10V 110ns 58 ns 20V 40V 160A Tc 480 mJ 10V ±20V
    IPW60R190E6FKSA1 IPW60R190E6FKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 151W 12 ns 600V 151W Tc 20.2A SWITCHING 90 ns SILICON N-Channel 190m Ω @ 9.5A, 10V 3.5V @ 630μA 1400pF @ 100V 63nC @ 10V 10ns 8 ns 20V 20.2A Tc 59A 10V ±20V
    IRFB4110GPBF IRFB4110GPBF Infineon Technologies $0.00
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    		 download 10 Weeks Through Hole Tube 2007 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 370W 25 ns 4V 370W Tc 180A SWITCHING 0.0045Ohm 78 ns SILICON N-Channel 4.5m Ω @ 75A, 10V 4V @ 250μA 9620pF @ 50V 210nC @ 10V 67ns 88 ns 20V 100V 4 V 120A Tc 670A 10V ±20V
    SPD15P10PLGBTMA1 SPD15P10PLGBTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2007 SIPMOS® no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead Tin 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Not Halogen Free 128W 7.6 ns -100V 128W Tc 15A 0.2Ohm 50 ns SILICON P-Channel 200m Ω @ 11.3A, 10V 2V @ 1.54mA 1490pF @ 25V 62nC @ 10V 21ns 29 ns 20V 15A Tc 100V 60A 4.5V 10V ±20V
    BSC009NE2LSATMA1 BSC009NE2LSATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2012 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT 8 R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W 10 ns 25V 2.5W Ta 96W Tc 41A SWITCHING 48 ns SILICON N-Channel 0.9m Ω @ 30A, 10V 2.2V @ 250μA 5800pF @ 12V 126nC @ 10V 33ns 19 ns 20V 41A Ta 100A Tc 4.5V 10V ±20V
    IRL540NSTRLPBF IRL540NSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 36A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 44mOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 3.8W 11 ns 2V 3.8W Ta 140W Tc 290 ns 36A SWITCHING 39 ns SILICON N-Channel 44m Ω @ 18A, 10V 2V @ 250μA 1800pF @ 25V 74nC @ 5V 81ns 62 ns 16V 100V 100V 2 V 36A Tc 4V 10V ±16V
    IPD90N04S402ATMA1 IPD90N04S402ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 23 ns 40V 150W Tc 90A 0.0024Ohm 27 ns SILICON N-Channel 2.4m Ω @ 90A, 10V 4V @ 95μA 9430pF @ 25V 118nC @ 10V 10ns 20V 90A Tc 475 mJ 10V ±20V