Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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BSO080P03NS3EGXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 16 ns | -30V | 1.6W Ta | 12A | SWITCHING | 64 ns | SILICON | P-Channel | 8m Ω @ 14.8A, 10V | 3.1V @ 150μA | 6750pF @ 15V | 81nC @ 10V | 47ns | 19 ns | 25V | 12A Ta | 30V | 149 mJ | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||
IPB65R420CFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 83.3W | 10 ns | 4V | 650V | 83.3W Tc | 8.7A | SWITCHING | 0.42Ohm | 38 ns | SILICON | N-Channel | 420m Ω @ 3.4A, 10V | 4.5V @ 340μA | 870pF @ 100V | 32nC @ 10V | 7ns | 8 ns | 20V | 8.7A Tc | 27A | 227 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IPB60R950C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Contains Lead | 2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 37W | 10 ns | 3V | 600V | 37W Tc | 4.4A | SWITCHING | 0.95Ohm | 60 ns | SILICON | N-Channel | 950m Ω @ 1.5A, 10V | 3.5V @ 130μA | 280pF @ 100V | 13nC @ 10V | 8ns | 13 ns | 20V | 4.4A Tc | 46 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IPB65R660CFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 9 ns | 650V | 62.5W Tc | 6A | SWITCHING | 0.66Ohm | 40 ns | SILICON | N-Channel | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 615pF @ 100V | 22nC @ 10V | 8ns | 10 ns | 20V | 6A | 6A Tc | 17A | 115 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IPD60R520CPBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | No | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | 66W | 17 ns | 600V | 66W Tc | 6.8A | SWITCHING | 0.52Ohm | 74 ns | SILICON | N-Channel | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 630pF @ 100V | 31nC @ 10V | 12ns | 16 ns | 20V | 6.8A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
BSB012NE2LX | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Obsolete | 3 (168 Hours) | 2 | EAR99 | RoHS Compliant | No | 7 | 3-WDSON | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | BOTTOM | 2 | YES | R-MBCC-N2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 5.7 ns | 2.8W Ta 57W Tc | 56A | SWITCHING | 0.0012Ohm | 25V | 34 ns | SILICON | N-Channel | 1.2m Ω @ 30A, 10V | 2V @ 250μA | 4900pF @ 12V | 67nC @ 10V | 6ns | 4.6 ns | 20V | 39A | 37A Ta 170A Tc | 25V | 400A | 285 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
AUIRF7478QTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.5mm | 4mm | 26MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 2.5W | 7.7 ns | 2.5W Ta | 7A | 44 ns | N-Channel | 26m Ω @ 4.2A, 10V | 3V @ 250μA | 1740pF @ 25V | 31nC @ 4.5V | 2.6ns | 13 ns | 20V | 60V | 7A | 7A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
AUIRFL024NTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | No | 4 | AVALANCHE RATED, HIGH RELIABILITY | TO-261-4, TO-261AA | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1W | 8.1 ns | 1W Ta | 2.8A | SWITCHING | 0.075Ohm | 22.2 ns | SILICON | N-Channel | 75m Ω @ 2.8A, 10V | 4V @ 250μA | 400pF @ 25V | 18.3nC @ 10V | 13.4ns | 17.7 ns | 20V | 55V | 0.0028A | 2.8A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
AUIRFZ46NL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | Through Hole | Tube | 2012 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 10.67mm | RoHS Compliant | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.65mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 3.8W | 14 ns | 3.8W Ta 107W Tc | 39A | 52 ns | N-Channel | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 1696pF @ 25V | 72nC @ 10V | 76ns | 57 ns | 20V | 55V | 39A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
AUIRFS3307Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 230W | 15 ns | 230W Tc | 120A | SWITCHING | 0.0058Ohm | 38 ns | SILICON | N-Channel | 5.8m Ω @ 75A, 10V | 4V @ 150μA | 4750pF @ 50V | 110nC @ 10V | 64ns | 65 ns | 20V | 75V | 120A Tc | 480A | 10V | ±20V | |||||||||||||||||||||||||||||||||
AUIRFZ34N | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2007 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.75mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 16.13mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 68W | 7 ns | 2V | 68W Tc | 29A | SWITCHING | 0.04Ohm | 31 ns | SILICON | N-Channel | 40m Ω @ 16A, 10V | 4V @ 250μA | 700pF @ 25V | 34nC @ 10V | 49ns | 40 ns | 20V | 55V | 29A Tc | 65 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
AUIRLR3915 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2000 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 120W | 7.4 ns | 120W Tc | 30A | 83 ns | N-Channel | 14m Ω @ 30A, 10V | 3V @ 250μA | 1870pF @ 25V | 92nC @ 10V | 51ns | 100 ns | 16V | 55V | 30A Tc | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
AUIRF2805S | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 14 ns | 200W Tc | 135A | SWITCHING | 0.0047Ohm | 68 ns | SILICON | N-Channel | 4.7m Ω @ 104A, 10V | 4V @ 250μA | 5110pF @ 25V | 230nC @ 10V | 120ns | 110 ns | 20V | 55V | 2 V | 75A | 135A Tc | 700A | 10V | ±20V | |||||||||||||||||||||||||||||||
AUIRF4905L | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | Through Hole | Tube | 2012 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | TO-262 | 9.65mm | 4.83mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Other Transistors | 1 | DRAIN | Single | 25W | 20 ns | 200W Tc | 42A | SWITCHING | 0.02Ohm | 51 ns | SILICON | P-Channel | 20m Ω @ 42A, 10V | 4V @ 250μA | 3500pF @ 25V | 180nC @ 10V | 20V | -55V | 42A Tc | 55V | 280A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
AUIRF9540N | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2007 | Automotive, AEC-Q101 | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.66mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 16.51mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 250 | 30 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 140W | 15 ns | -2V | 140W Tc | -23A | SWITCHING | 51 ns | SILICON | P-Channel | 117m Ω @ 11A, 10V | 4V @ 250μA | 1300pF @ 25V | 97nC @ 10V | 67ns | 51 ns | 20V | -100V | 23A Tc | 100V | 76A | 10V | ±20V | |||||||||||||||||||||||||||||||
AUIRFP2602 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 15.87mm | RoHS Compliant | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.31mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 380W | 70 ns | 380W Tc | 180A | SWITCHING | 24V | 150 ns | SILICON | N-Channel | 1.6m Ω @ 180A, 10V | 4V @ 250μA | 11220pF @ 25V | 390nC @ 10V | 490ns | 270 ns | 20V | 180A Tc | 24V | 400 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
AUIRFP064N | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | Through Hole | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-247-3 | No SVHC | 20.7mm | 5.31mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 200W | 14 ns | 2V | 200W Tc | 110A | SWITCHING | 0.008Ohm | 43 ns | SILICON | N-Channel | 8m Ω @ 59A, 10V | 4V @ 250μA | 4000pF @ 25V | 170nC @ 10V | 100ns | 70 ns | 20V | 55V | 110A Tc | 480 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
AUIRFR1018E | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | AUIRFR1018E | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 13 ns | 2V | 110W Tc | 56A | SWITCHING | 0.0084Ohm | 55 ns | SILICON | N-Channel | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 2290pF @ 50V | 69nC @ 10V | 35ns | 46 ns | 20V | 60V | 79A | 56A Tc | 88 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
IRFSL4510PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Through Hole | Tube | 2012 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | Through Hole | 2.084002g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 13 ns | 3V | 140W Tc | 61A | SWITCHING | 28 ns | SILICON | N-Channel | 13.9m Ω @ 37A, 10V | 4V @ 100μA | 3180pF @ 50V | 87nC @ 10V | 32ns | 28 ns | 20V | 100V | 3 V | 61A Tc | 250A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
AUIRFR2405 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 15 ns | 110W Tc | 30A | SWITCHING | 55 ns | SILICON | N-Channel | 16m Ω @ 34A, 10V | 4V @ 250μA | 2430pF @ 25V | 110nC @ 10V | 130ns | 78 ns | 20V | 55V | 56A | 30A Tc | 220A | 10V | ±20V | |||||||||||||||||||||||||||||||
AUIRFS4010 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 375W | 21 ns | 375W Tc | 180A | SWITCHING | 0.0047Ohm | 100 ns | SILICON | N-Channel | 4.7m Ω @ 106A, 10V | 4V @ 250μA | 9575pF @ 50V | 215nC @ 10V | 86ns | 77 ns | 20V | 100V | 180A Tc | 720A | 10V | ±20V | ||||||||||||||||||||||||||||||||
AUIRFZ44NS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 3.8W | 12 ns | 2V | 3.8W Ta 94W Tc | 49A | SWITCHING | 44 ns | SILICON | N-Channel | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 1470pF @ 25V | 63nC @ 10V | 60ns | 45 ns | 20V | 55V | 49A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||
AUIRFR3607 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | AUIRFR3607 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 16 ns | 2V | 140W Tc | 56A | SWITCHING | 0.009Ohm | 43 ns | SILICON | N-Channel | 9m Ω @ 46A, 10V | 4V @ 100μA | 3070pF @ 50V | 84nC @ 10V | 110ns | 96 ns | 20V | 75V | 80A | 56A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||
AUIRLR3105 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 57W | 8 ns | 1V | 57W Tc | 25A | 25 ns | N-Channel | 37m Ω @ 15A, 10V | 3V @ 250μA | 710pF @ 25V | 20nC @ 5V | 57ns | 37 ns | 16V | 55V | 25A Tc | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
AUIRLR120N | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 48W | 4 ns | 1V | 48W Tc | 10A | SWITCHING | 0.225Ohm | 23 ns | SILICON | N-Channel | 185m Ω @ 6A, 10V | 2V @ 250μA | 440pF @ 25V | 20nC @ 5V | 35ns | 22 ns | 16V | 100V | 1 V | 10A Tc | 85 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||||
AUIRF7207QTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | AVALANCHE RATED, HIGH RELIABILITY | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 11 ns | -700mV | 2.5W Ta | 5.4A | SWITCHING | 0.06Ohm | 43 ns | SILICON | P-Channel | 60m Ω @ 5.4A, 4.5V | 1.6V @ 250μA | 780pF @ 15V | 22nC @ 4.5V | 24ns | 41 ns | 12V | -20V | 5.4A Ta | 20V | 43A | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||
BSD816SNH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | EAR99 | 2mm | ROHS3 Compliant | Tin | 6 | 6-VSSOP, SC-88, SOT-363 | 800μm | 1.25mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | NOT SPECIFIED | NOT SPECIFIED | Single | 5.3 ns | 20V | 500mW Ta | 1.4A | 11 ns | N-Channel | 160m Ω @ 1.4A, 2.5V | 0.95V @ 3.7μA | 180pF @ 10V | 0.6nC @ 2.5V | 9ns | 8V | 1.4A Ta | 1.8V 2.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
BUZ31H3046XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2005 | SIPMOS® | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.36mm | RoHS Compliant | Lead Free | Tin | 3 | AVALANCHE RATED | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.45mm | 4.52mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | 1 | Halogen Free | Single | 95W | 12 ns | 200V | 95W Tc | 14.5A | 0.2Ohm | 150 ns | SILICON | N-Channel | 200m Ω @ 9A, 5V | 4V @ 1mA | 1120pF @ 25V | 50ns | 20V | 200V | 14.5A Tc | 58A | 200 mJ | 5V | ±20V | |||||||||||||||||||||||||||||||||||
IPP80P04P4L06AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2011 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | 1 (Unlimited) | 175°C | -55°C | 10mm | RoHS Compliant | Contains Lead | 3 | TO-220-3 | 15.65mm | 4.4mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | Halogen Free | Single | 17 ns | -40V | 10.8mOhm | PG-TO220-3-1 | 88W Tc | 80A | 61 ns | P-Channel | 6.7mOhm @ 80A, 10V | 2.2V @ 150μA | 6580pF @ 25V | 104nC @ 10V | 12ns | 44 ns | 16V | 80A Tc | 40V | 5.06nF | 4.5V 10V | +5V, -16V | 6.7 mΩ | |||||||||||||||||||||||||||||||||||||||||||
AUIRFN7107TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | RoHS Compliant | 8 | ULTRA LOW RESISTANCE | 8-PowerTDFN | 8.5mOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | DRAIN | Single | 8 ns | 4.4W Ta 125W Tc | 14A | SWITCHING | 75V | 19 ns | SILICON | N-Channel | 8.5m Ω @ 45A, 10V | 4V @ 100μA | 3001pF @ 25V | 77nC @ 10V | 12ns | 7 ns | 20V | 14A Ta 75A Tc | 75V | 300A | 10V | ±20V |
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