Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IRFS3207ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 170A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 2.39mm | 6.22mm | 4.1MOhm | Surface Mount | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | 1 | 300W | 20 ns | 4V | 300W Tc | 54 ns | 170A | 55 ns | N-Channel | 4.1m Ω @ 75A, 10V | 4V @ 150μA | 6920pF @ 50V | 170nC @ 10V | 68ns | 20V | 75V | 75V | 4 V | 120A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IPB80N04S2L03ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | YES | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 300W | 19 ns | 40V | 300W Tc | 80A | 77 ns | SILICON | N-Channel | 3.1m Ω @ 80A, 10V | 2V @ 250μA | 6000pF @ 25V | 213nC @ 10V | 50ns | 27 ns | 20V | 40V | 80A Tc | 810 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPD30N03S2L07ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | 3 | ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 10 ns | 136W Tc | 30A | 0.0098Ohm | 40 ns | SILICON | N-Channel | 6.7m Ω @ 30A, 10V | 2V @ 85μA | 1900pF @ 25V | 68nC @ 10V | 30ns | 16 ns | 20V | 30A Tc | 30V | 120A | 250 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPD15N06S2L64ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | 3 | ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 47W Tc | 19A | 0.085Ohm | 55V | SILICON | N-Channel | 64m Ω @ 13A, 10V | 2V @ 14μA | 354pF @ 25V | 13nC @ 10V | 19A Tc | 55V | 76A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPI80N06S207AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2010 | OptiMOS™ | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 250W Tc | N-Channel | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 3400pF @ 25V | 110nC @ 10V | 80A Tc | 55V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPI90R800C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 70 ns | 900V | 104W Tc | 6.9A | 0.8Ohm | 400 ns | SILICON | N-Channel | 800m Ω @ 4.1A, 10V | 3.5V @ 460μA | 1100pF @ 100V | 42nC @ 10V | 20ns | 32 ns | 20V | 6.9A Tc | 15A | 157 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPI80N03S4L03AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | 2007 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.36mm | RoHS Compliant | 3 | ULTRA LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.45mm | 4.52mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | NO | 1 | Halogen Free | Single | 136W | 14 ns | 30V | 136W Tc | 80A | 0.0027Ohm | 62 ns | SILICON | N-Channel | 2.7m Ω @ 80A, 10V | 2.2V @ 90μA | 9750pF @ 25V | 140nC @ 10V | 9ns | 13 ns | 16V | 30V | 80A Tc | 260 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
IRFS31N20DTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2000 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Contains Lead | 31A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE | DRAIN | 3.1W Ta 200W Tc | 31A | SWITCHING | 0.082Ohm | SILICON | N-Channel | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 2370pF @ 25V | 110nC @ 10V | 38ns | 31A Tc | 124A | 420 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
IRF7811AVTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2005 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 8541.29.00.95 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G8 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | SILICON | N-Channel | 14m Ω @ 15A, 4.5V | 3V @ 250μA | 1801pF @ 10V | 26nC @ 5V | 10.8A | 10.8A Ta | 30V | 4.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
BSC050N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Tin | 8 | AVALANCHE RATED | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 50W | 2.5W Ta 50W Tc | 16A | SWITCHING | 0.0063Ohm | 30V | SILICON | N-Channel | 5m Ω @ 30A, 10V | 2V @ 250μA | 3600pF @ 15V | 46nC @ 10V | 7.2ns | 16V | 16A Ta 80A Tc | 30V | 320A | 35 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRL3713SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 3mOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 16 ns | 2.5V | 330W Tc | 260A | SWITCHING | 40 ns | SILICON | N-Channel | 3m Ω @ 38A, 10V | 2.5V @ 250μA | 5890pF @ 15V | 110nC @ 4.5V | 160ns | 57 ns | 20V | 30V | 30V | 2.5 V | 75A | 260A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
SPP15P10PHXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2007 | SIPMOS® | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | TO-220AB | Halogen Free | Single | 128W | 9.5 ns | -100V | 128W Tc | 15A | 0.24Ohm | 33 ns | SILICON | P-Channel | 240m Ω @ 10.6A, 10V | 2.1V @ 1.54mA | 1280pF @ 25V | 48nC @ 10V | 23ns | 16 ns | 20V | -100V | 15A Tc | 100V | 60A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IPI100N04S4H2AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2012 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Contains Lead | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 18 ns | 40V | 115W Tc | 100A | 0.0027Ohm | 19 ns | SILICON | N-Channel | 2.7m Ω @ 100A, 10V | 4V @ 70μA | 7180pF @ 25V | 90nC @ 10V | 13ns | 21 ns | 20V | 100A Tc | 400A | 280 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPI65R660CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Not Qualified | 1 | Halogen Free | Single | 63W | 9 ns | 62.5W Tc | 6A | SWITCHING | 0.66Ohm | 40 ns | SILICON | N-Channel | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 615pF @ 100V | 22nC @ 10V | 8ns | 10 ns | 30V | 650V | 6A | 6A Tc | 17A | 115 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPP120N04S401AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | 2010 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10mm | RoHS Compliant | 3 | TO-220-3 | 15.65mm | 4.4mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | NO | 1 | TO-220AB | Halogen Free | Single | 34 ns | 40V | 188W Tc | 120A | 0.0019Ohm | 41 ns | SILICON | N-Channel | 1.9m Ω @ 100A, 10V | 4V @ 140μA | 14000pF @ 25V | 176nC @ 10V | 20V | 120A Tc | 480A | 750 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPP65R380C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Not Qualified | 1 | TO-220AB | Halogen Free | Single | 83W | 12 ns | 83W Tc | 10.6A | SWITCHING | 110 ns | SILICON | N-Channel | 380m Ω @ 3.2A, 10V | 3.5V @ 320μA | 710pF @ 100V | 39nC @ 10V | 12ns | 11 ns | 20V | 700V | 10.6A Tc | 650V | 29A | 215 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
BUZ73HXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2005 | SIPMOS® | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 40W | 10 ns | 40W Tc | 7A | 0.4Ohm | 200V | 55 ns | SILICON | N-Channel | 400m Ω @ 4.5A, 10V | 4V @ 1mA | 530pF @ 25V | 40ns | 30 ns | 20V | 7A | 7A Tc | 200V | 28A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFH7191TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | FASTIRFET™, HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 8 | 8-PowerTDFN | 8mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 3.6W Ta 104W Tc | 80A | N-Channel | 8m Ω @ 48A, 10V | 3.6V @ 100μA | 1685pF @ 50V | 39nC @ 10V | 15A Ta 80A Tc | 100V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60R2K1CEBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2015 | CoolMOS™ CE | yes | Obsolete | 3 (168 Hours) | 2 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 3.949996g | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 7 ns | 22W Tc | 2.3A | SWITCHING | 30 ns | SILICON | N-Channel | 2.1 Ω @ 760mA, 10V | 3.5V @ 60μA | 140pF @ 100V | 6.7nC @ 10V | 7ns | 50 ns | 20V | 600V | 2.3A Tc | 6A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPA60R800CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | 2008 | CoolMOS™ CE | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | 2.299997g | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-220AB | ISOLATED | Halogen Free | Single | 9 ns | 600V | 27W Tc | 5.6A | SWITCHING | 0.8Ohm | 50 ns | SILICON | N-Channel | 800m Ω @ 2A, 10V | 3.5V @ 170μA | 373pF @ 100V | 17.2nC @ 10V | 7ns | 12 ns | 20V | 600V | 5.6A Tc | 72 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IPD60R400CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2014 | CoolMOS™ CE | yes | Obsolete | 3 (168 Hours) | 2 | EAR99 | RoHS Compliant | Lead Free | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.55mm | Surface Mount | 3.949996g | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 112W | 11 ns | 83W Tc | 14.7A | 150°C | SWITCHING | 0.4Ohm | 56 ns | SILICON | N-Channel | 400m Ω @ 3.8A, 10V | 3.5V @ 300μA | 700pF @ 100V | 32nC @ 10V | 9ns | 8 ns | 20V | 600V | 10.3A Tc | 30A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPA80R460CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2015 | CoolMOS™ CE | yes | Discontinued | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 25 ns | 34W Tc | 5A | SWITCHING | 0.46Ohm | 800V | 72 ns | SILICON | N-Channel | 460m Ω @ 7.1A, 10V | 3.9V @ 680μA | 1600pF @ 100V | 64nC @ 10V | 15ns | 10 ns | 20V | 10.8A | 5A Tc | 800V | 470 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPD60R800CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2014 | CoolMOS™ CE | yes | Obsolete | 3 (168 Hours) | 2 | EAR99 | RoHS Compliant | Lead Free | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 3.949996g | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 9 ns | 48W Tc | 5.6A | SWITCHING | 0.8Ohm | 50 ns | SILICON | N-Channel | 800m Ω @ 2A, 10V | 3.5V @ 170μA | 373pF @ 100V | 17.2nC @ 10V | 7ns | 12 ns | 20V | 600V | 5.6A Tc | 72 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPU60R1K5CEBKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2015 | CoolMOS™ CE | yes | Discontinued | 3 (168 Hours) | 3 | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | 343.085929mg | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | R-PSIP-T3 | 1 | 1 | DRAIN | Single | 8 ns | 28W Tc | 3.1A | SWITCHING | 600V | 40 ns | SILICON | N-Channel | 1.5 Ω @ 1.1A, 10V | 3.5V @ 90μA | 200pF @ 100V | 9.4nC @ 10V | 7ns | 20 ns | 20V | 5A | 3.1A Tc | 600V | 8A | 26 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPP100N04S2L03AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 40V | 300W Tc | 100A | 0.0033Ohm | SILICON | N-Channel | 3.3m Ω @ 80A, 10V | 2V @ 250μA | 6000pF @ 25V | 230nC @ 10V | 100A Tc | 400A | 810 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IPL60R255P6AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | CoolMOS™ P6 | yes | Obsolete | 2A (4 Weeks) | 4 | RoHS Compliant | Contains Lead | 4 | 4-PowerTSFN | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 600V | 126W Tc | 15.9A | SWITCHING | 0.255Ohm | SILICON | N-Channel | 255m Ω @ 6.4A, 10V | 4.5V @ 530μA | 1450pF @ 100V | 31nC @ 10V | 15.9A Tc | 352 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPU50R3K0CEBKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Tube | 2013 | CoolMOS™ CE | no | Obsolete | 3 (168 Hours) | 3 | 6.73mm | RoHS Compliant | Contains Lead | 3 | TO-251-3 Short Leads, IPak, TO-251AA | 6.22mm | 2.41mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 1 | Halogen Free | Single | 7.3 ns | 500V | 18W Tc | 1.7A | SWITCHING | 3Ohm | 23 ns | SILICON | N-Channel | 3 Ω @ 400mA, 13V | 3.5V @ 30μA | 84pF @ 100V | 4.3nC @ 10V | 5.8ns | 49 ns | 20V | 550V | 1.7A Tc | 4.1A | 18 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPU50R2K0CEBKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Tube | 2013 | CoolMOS™ | no | Obsolete | 3 (168 Hours) | EAR99 | 6.73mm | RoHS Compliant | 3 | TO-251-3 Short Leads, IPak, TO-251AA | 6.22mm | 2.41mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 1 | Single | 22W | 6 ns | 22W Tc | 2.4A | 21 ns | N-Channel | 2 Ω @ 600mA, 13V | 3.5V @ 50μA | 124pF @ 100V | 6nC @ 10V | 5ns | 38 ns | 20V | 550V | 2.4A Tc | 500V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRLH5036TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | RoHS Compliant | Lead Free | Tin | No | 8 | HIGH RELIABILITY | 8-PowerVDFN | No SVHC | 838.2μm | 5.0038mm | 5.5MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | 260 | 40 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 160W | 23 ns | 1V | 3.6W Ta 160W Tc | 100A | SWITCHING | 28 ns | SILICON | N-Channel | 4.4m Ω @ 50A, 10V | 2.5V @ 150μA | 5360pF @ 25V | 90nC @ 10V | 48ns | 15 ns | 16V | 60V | 1 V | 20A | 20A Ta 100A Tc | 400A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||
IRFH8321TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-TQFN Exposed Pad | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Single | 3.4W | 14 ns | 3.4W Ta 54W Tc | 21A | 12 ns | N-Channel | 4.9m Ω @ 20A, 10V | 2V @ 50μA | 2600pF @ 10V | 59nC @ 10V | 20ns | 6.8 ns | 20V | 30V | 21A Ta 83A Tc | 4.5V 10V | ±20V |
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