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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFI4228PBF IRFI4228PBF Infineon Technologies $0.00
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    		 download 15 Weeks Through Hole Tube 2006 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free 34A No 3 TO-220-3 Full Pack 9.8mm 4.826mm 16MOhm Through Hole -40°C~150°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 46W 46W Tc 34A SWITCHING SILICON N-Channel 16m Ω @ 20A, 10V 5V @ 250μA 4560pF @ 25V 110nC @ 10V 30V 150V 34A Tc 10V ±30V
    IRLR3114ZPBF IRLR3114ZPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 4.9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 140W 25 ns 2.5V 140W Tc 45 ns 130A 33 ns N-Channel 4.9m Ω @ 42A, 10V 2.5V @ 100μA 3810pF @ 25V 56nC @ 4.5V 140ns 50 ns 16V 40V 42A Tc 4.5V 10V ±16V
    IRFS3004-7PPBF IRFS3004-7PPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) 6 EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.572mm 9.65mm 1.25MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 DRAIN Single 380W 23 ns 4V 380W Tc 400A SWITCHING 91 ns SILICON N-Channel 1.25m Ω @ 195A, 10V 4V @ 250μA 9130pF @ 25V 240nC @ 10V 240ns 160 ns 20V 40V 240A 240A Tc 290 mJ 10V ±20V
    BSZ042N04NSGATMA1 BSZ042N04NSGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2003 OptiMOS™ no Obsolete 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 AVALANCHE RATED, HIGH VOLTAGE 8-PowerVDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 69W 14 ns 40V 2.1W Ta 69W Tc 40A SWITCHING 0.0042Ohm 20 ns SILICON N-Channel 4.2m Ω @ 20A, 10V 4V @ 36μA 3700pF @ 20V 46nC @ 10V 3.4ns 4.2 ns 20V 40A Tc 160A 150 mJ 10V ±20V
    IRLR3717PBF IRLR3717PBF Infineon Technologies $0.00
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    		 download 15 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 120A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm 4MOhm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 89W 14 ns 2V 89W Tc 33 ns 120A SWITCHING 5.8 ns SILICON N-Channel 4m Ω @ 15A, 10V 2.45V @ 250μA 2830pF @ 10V 31nC @ 4.5V 14ns 16 ns 20V 20V 120A Tc 460A 460 mJ 4.5V 10V ±20V
    IRFU15N20DPBF IRFU15N20DPBF Infineon Technologies $0.00
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    		 Through Hole Tube 2005 HEXFET® Obsolete 1 (Unlimited) RoHS Compliant Lead Free 17A No 3 TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) 1 Single 140W 9.7 ns 110W Tc 17A 17 ns N-Channel 165m Ω @ 10A, 10V 5.5V @ 250μA 910pF @ 25V 41nC @ 10V 32ns 8.9 ns 30V 200V 17A Tc 10V ±30V
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    		 14 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free 62A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.572mm 9.65mm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) 1 Single 120W 12 ns 120W Tc 62A 55 ns N-Channel 12.6m Ω @ 48A, 10V 4V @ 250μA 3270pF @ 25V 130nC @ 10V 80ns 49 ns 20V 75V 62A Tc 10V ±20V
    IRF7488PBF IRF7488PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 150°C -55°C 4.9784mm ROHS3 Compliant Lead Free 6.3A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 4.05mm Surface Mount 80V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 1 SINGLE WITH BUILT-IN DIODE 6.3 mm 2.5W 13 ns 4V 2.5W Ta 6.3A SWITCHING 0.029Ohm 44 ns N-Channel 29m Ω @ 3.8A, 10V 4V @ 250μA 1680pF @ 25V 57nC @ 10V 12ns 16 ns 20V 80V 80V 4 V 6.3A Ta 50A 96 mJ 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free 87A No 3 TO-220-3 No SVHC 8.763mm 4.69mm 6.3MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 79mW 13 ns 2.25V 79W Tc 24 ns 87A SWITCHING 16 ns SILICON N-Channel 6.3m Ω @ 21A, 10V 2.25V @ 250μA 2130pF @ 15V 26nC @ 4.5V 41ns 4.7 ns 20V 30V 20 V 42A 87A Tc 60 mJ 4.5V 10V ±20V
    IRF3710ZLPBF IRF3710ZLPBF Infineon Technologies $0.00
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    		 download 15 Weeks Through Hole Tube 2003 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 59A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 160W 17 ns 160W Tc 59A SWITCHING 41 ns SILICON N-Channel 18m Ω @ 35A, 10V 4V @ 250μA 2900pF @ 25V 120nC @ 10V 77ns 56 ns 20V 100V 4 V 59A Tc 240A 200 mJ 10V ±20V
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    		 download Surface Mount Tube 2002 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 106A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 7MOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 16 ns 4V 93 ns 200W Tc 106A SWITCHING 68 ns SILICON N-Channel 7m Ω @ 82A, 10V 4V @ 250μA 5310pF @ 25V 220nC @ 10V 140ns 120 ns 20V 75V 75V 4 V 75A 106A Tc 550A 10V ±20V
    IRFS52N15DPBF IRFS52N15DPBF Infineon Technologies $0.00
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    		 download 52 Weeks Surface Mount Tube 2002 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 60A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 32MOhm Surface Mount -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 320W 16 ns 5V 3.8W Ta 230W Tc 60A SWITCHING 28 ns SILICON N-Channel 32m Ω @ 36A, 10V 5V @ 250μA 2770pF @ 25V 89nC @ 10V 47ns 25 ns 30V 150V 150V 5 V 51A Tc 240A 470 mJ 10V ±30V
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 84A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 8.5mOhm Surface Mount -55°C~175°C TJ 12V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 88W 11 ns 1.9V 88W Tc 84A SWITCHING 21 ns SILICON N-Channel 8.5m Ω @ 15A, 4.5V 1.9V @ 250μA 2490pF @ 6V 41nC @ 5V 14ns 17 ns 12V 12V 12V 1.9 V 84A Tc 2.8V 4.5V ±12V
    IPB055N03LGATMA1 IPB055N03LGATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W 6.7 ns 68W Tc 50A SWITCHING 0.0078Ohm 25 ns SILICON N-Channel 5.5m Ω @ 30A, 10V 2.2V @ 250μA 3200pF @ 15V 31nC @ 10V 5.2ns 4 ns 20V 50A Tc 30V 60 mJ 4.5V 10V ±20V
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    		 download 52 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 56W 5.5 ns 30V 56W Tc 50A SWITCHING 0.0095Ohm 21 ns SILICON N-Channel 6.5m Ω @ 30A, 10V 2.2V @ 250μA 2400pF @ 15V 23nC @ 10V 4.2ns 3.4 ns 20V 50A Tc 60 mJ 4.5V 10V ±20V
    IRFS4620PBF IRFS4620PBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) Single 144W 13.4 ns 5V 144W Tc 24A 25.4 ns N-Channel 77.5m Ω @ 15A, 10V 5V @ 100μA 1710pF @ 50V 38nC @ 10V 22.4ns 14.8 ns 20V 200V 200V 5 V 24A Tc 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) 3 SMD/SMT EAR99 6.35mm RoHS Compliant Lead Free No 5 LOW CONDUCTION LOSS DirectFET™ Isometric MX No SVHC 506μm 5.05mm 1.8MOhm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER BOTTOM 260 30 R-XBCC-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.8W 16 ns 2.8W Ta 75W Tc 41 ns 32A SWITCHING 16 ns SILICON N-Channel 1.8m Ω @ 32A, 10V 2.35V @ 100μA 4280pF @ 13V 53nC @ 4.5V 27ns 11 ns 20V 25V 25V 1.8 V 32A Ta 160A Tc 4.5V 10V ±20V
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    		 download 24 Weeks Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.572mm 9.65mm 2.1MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 375W 14 ns 4V 375W Tc 293A 118 ns N-Channel 2.1m Ω @ 168A, 10V 4V @ 250μA 8850pF @ 50V 300nC @ 10V 61ns 69 ns 20V 60V 240A Tc 10V ±20V
    IRL1004STRRPBF IRL1004STRRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 10.668mm RoHS Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 150W 16 ns 3.8W Ta 200W Tc 130A SWITCHING 0.0065Ohm 25 ns SILICON N-Channel 6.5m Ω @ 78A, 10V 1V @ 250μA 5330pF @ 25V 100nC @ 4.5V 210ns 14 ns 16V 40V 130A Tc 520A 700 mJ 4.5V 10V ±16V
    IRFS4310TRRPBF IRFS4310TRRPBF Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.007Ohm 100V SILICON N-Channel 7m Ω @ 75A, 10V 4V @ 250μA 7670pF @ 50V 250nC @ 10V 75A 130A Tc 100V 550A 980 mJ 10V ±20V
    IRFSL3806PBF IRFSL3806PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm 15.8MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 40 FET General Purpose Power 1 DRAIN Single 71W 6.3 ns 4V 71W Tc 33 ns 43A SWITCHING 49 ns SILICON N-Channel 15.8m Ω @ 25A, 10V 4V @ 50μA 1150pF @ 50V 30nC @ 10V 40ns 47 ns 20V 60V 43A Tc 170A 10V ±20V
    IRFS4410ZPBF IRFS4410ZPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 230W 16 ns 4V 230W Tc 57 ns 97A SWITCHING 43 ns SILICON N-Channel 9m Ω @ 58A, 10V 4V @ 150μA 4820pF @ 50V 120nC @ 10V 52ns 57 ns 20V 100V 100V 4 V 97A Tc 242 mJ 10V ±20V
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    		 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) Through Hole 175°C -55°C 6.7056mm RoHS Compliant No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 110W 16 ns 4V 16mOhm IPAK (TO-251) 31 ns 110W Tc 47 ns 53A 44 ns N-Channel 16mOhm @ 32A, 10V 4V @ 100μA 2190pF @ 25V 75nC @ 10V 65ns 29 ns 20V 75V 75V 4 V 42A Tc 75V 2.19nF 10V ±20V 16 mΩ
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    		 download 15 Weeks Through Hole Tube 2012 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 40 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W 20 ns 250W Tc 120A SWITCHING 0.006Ohm 55 ns SILICON N-Channel 6m Ω @ 75A, 10V 4V @ 150μA 6860pF @ 50V 170nC @ 10V 60ns 57 ns 20V 100V 4 V 120A Tc 560A 10V ±20V
    IRFSL3607PBF IRFSL3607PBF Infineon Technologies $0.00
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    		 download 15 Weeks Through Hole Tube 2008 HEXFET® Obsolete 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 40 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 140W 16 ns 4V 140W Tc 50 ns 80A SWITCHING 0.009Ohm 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 75V 4 V 80A Tc 10V ±20V
    IRL1404ZSPBF IRL1404ZSPBF Infineon Technologies $0.00
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 230W Tc N-Channel 3.1m Ω @ 75A, 10V 2.7V @ 250μA 5080pF @ 25V 110nC @ 5V 75A Tc 40V 4.5V 10V ±16V
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    		 download Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 71W 6.3 ns 4V 71W Tc 33 ns 43A SWITCHING 49 ns SILICON N-Channel 15.8m Ω @ 25A, 10V 4V @ 50μA 1150pF @ 50V 30nC @ 10V 40ns 47 ns 20V 60V 43A Tc 10V ±20V
    IRFR3607PBF IRFR3607PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 16 ns 4V 140W Tc 50 ns 80A SWITCHING 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 75V 4 V 56A 56A Tc 10V ±20V
    IRFR1018EPBF IRFR1018EPBF Infineon Technologies $0.00
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    		 download 15 Weeks Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 13 ns 4V 110W Tc 39 ns 79A SWITCHING 0.0084Ohm 55 ns SILICON N-Channel 8.4m Ω @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 56A 56A Tc 88 mJ 10V ±20V
    IRF1018ESPBF IRF1018ESPBF Infineon Technologies $0.00
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    		 download 52 Weeks Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 8.4MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 110W 13 ns 4V 110W Tc 39 ns 79A SWITCHING 55 ns SILICON N-Channel 8.4m Ω @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 79A Tc 88 mJ 10V ±20V