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Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Forward Voltage Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
BUZ32 BUZ32 Infineon Technologies $0.00
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download Through Hole Tube 2005 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 9.5A 3 AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 TO-220AB Single 75W 75W Tc 9.5A 0.4Ohm 55 ns SILICON N-Channel 400m Ω @ 6A, 10V 4V @ 1mA 530pF @ 25V 40ns 30 ns 20V 200V 9.5A Tc 10V ±20V
BSO104N03S BSO104N03S Infineon Technologies $0.00
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download Surface Mount Tape & Reel (TR) 2006 OptiMOS™ Obsolete 1 (Unlimited) 8 EAR99 RoHS Compliant Lead Free 13A 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 NOT SPECIFIED 8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 1.56W 5 ns 1.56W Ta 10A SWITCHING 0.0097Ohm 21 ns SILICON N-Channel 9.7m Ω @ 13A, 10V 2V @ 30μA 2130pF @ 15V 16nC @ 5V 4.2ns 4.2 ns 20V 30V 10A Tc 110 pF 4.5V 10V ±20V
IRF2907ZS-7PPBF IRF2907ZS-7PPBF Infineon Technologies $0.00
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download Surface Mount Tube 2005 HEXFET® Obsolete 1 (Unlimited) 6 SMD/SMT EAR99 10.3378mm RoHS Compliant Lead Free 160A No 7 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.5466mm 10.05mm 4.5MOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 DRAIN Single 300W 21 ns 4V 35 ns 300W Tc 53 ns 160A SWITCHING 92 ns SILICON N-Channel 3.8m Ω @ 110A, 10V 4V @ 250μA 7580pF @ 25V 260nC @ 10V 90ns 44 ns 20V 75V 75V 4 V 160A Tc 10V ±20V
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download Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 13A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 11MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 FET General Purpose Power 1 Single 2.5W 16 ns 3V 2.5W Ta 13A SWITCHING 38 ns SILICON N-Channel 11m Ω @ 7A, 4.5V 3V @ 250μA 31nC @ 5V 20ns 16 ns 12V 30V 3 V 13A Ta 4.5V ±12V
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download 22 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant AVALANCHE RATED 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.0075Ohm 30V SILICON N-Channel 7.5m Ω @ 15A, 10V 2V @ 250μA 3480pF @ 25V 56nC @ 5V 15A 15A Ta 30V 120A 200 mJ 2.8V 10V ±12V
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download Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 2.5W Ta N-Channel 17m Ω @ 9A, 10V 3V @ 250μA 2000pF @ 20V 23nC @ 4.5V 9A Ta 40V 4.5V 10V ±20V
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download 16 Weeks Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~155°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.004Ohm 30V SILICON N-Channel 4m Ω @ 20A, 10V 2.32V @ 250μA 4310pF @ 15V 51nC @ 4.5V 20A 20A Ta 30V 160A 260 mJ 4.5V 10V ±20V
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download 12 Weeks Tube 2003 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Tc SWITCHING 0.015Ohm 80V SILICON N-Channel 15m Ω @ 5.6A, 10V 4V @ 250μA 1510pF @ 25V 53nC @ 10V 9.3A 9.3A Tc 80V 74A 180 mJ 10V ±20V
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download 39 Weeks Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 48W Tc SWITCHING 0.21Ohm 100V SILICON N-Channel 210m Ω @ 5.6A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 9.4A 9.4A Tc 100V 38A 91 mJ 10V ±20V
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download 39 Weeks Surface Mount Tube 2001 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free 4.5A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 60mOhm Surface Mount -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 Single 2.5W 9.5 ns 5.5V 2.5W Ta 120 ns 4.5A SWITCHING 16 ns SILICON N-Channel 60m Ω @ 2.7A, 10V 5.5V @ 250μA 930pF @ 25V 50nC @ 10V 11ns 13 ns 30V 100V 100V 5.5 V 4.5A Ta 36A 200 mJ 10V ±30V
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download Tube 2000 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 110W Tc N-Channel 26m Ω @ 25A, 10V 4V @ 250μA 2400pF @ 25V 110nC @ 10V 42A Tc 75V 10V ±20V
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download Surface Mount Tape & Reel (TR) 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 175°C -55°C 10.3886mm ROHS3 Compliant Lead Free -31A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.73mm Surface Mount -55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 Other Transistors 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W 14 ns 110W Tc -31A SWITCHING 0.065Ohm 39 ns P-Channel 65m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 66ns 63 ns 20V -55V 31A Tc 55V 280 mJ 10V ±20V
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download Tube 2000 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.03Ohm 55V SILICON N-Channel 27m Ω @ 25A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 20A 42A Tc 55V 160A 210 mJ 4V 10V ±16V
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download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 2 6.7056mm RoHS Compliant Lead Free 110A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm Surface Mount -55°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 120W 12 ns 2.5W Ta 120W Tc 110A SWITCHING 0.0065Ohm 17 ns SILICON N-Channel 6.5m Ω @ 15A, 10V 3V @ 250μA 2980pF @ 10V 44nC @ 4.5V 220ns 12 ns 20V 20V 3 V 100A Tc 440A 460 mJ 4.5V 10V ±20V
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download Tape & Reel (TR) 2001 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 94W Tc SWITCHING 0.0175Ohm 55V SILICON N-Channel 17.5m Ω @ 25A, 10V 4V @ 250μA 1470pF @ 25V 63nC @ 10V 49A 49A Tc 55V 160A 150 mJ 10V ±20V
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download 18 Weeks Tube 1997 HEXFET® Discontinued 1 (Unlimited) 4 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE DRAIN 1W Ta 0.051Ohm 55V SILICON N-Channel 40m Ω @ 3.8A, 10V 2V @ 250μA 870pF @ 25V 48nC @ 10V 5.2A 3.8A Ta 55V 30A 110 mJ 4V 10V ±16V
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download Surface Mount Tape & Reel (TR) 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 175°C -55°C 10.668mm ROHS3 Compliant Lead Free 36A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 3.8W 11 ns 3.8W Ta 140W Tc 36A SWITCHING 39 ns N-Channel 44m Ω @ 18A, 10V 2V @ 250μA 1800pF @ 25V 74nC @ 5V 81ns 62 ns 16V 100V 36A Tc 4V 10V ±16V
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download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 6.7056mm RoHS Compliant Lead Free 94A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 6MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 Single 89W 9.2 ns 2.25V 7.4mOhm D-Pak 89W Tc 49 ns 94A 15 ns N-Channel 6mOhm @ 15A, 10V 2.25V @ 250μA 2920pF @ 15V 32nC @ 4.5V 3.8ns 10 ns 20V 30V 94A Tc 30V 2.92nF 4.5V 10V ±20V 6 mΩ
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download 39 Weeks Tube 1998 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 48W Tc N-Channel 185m Ω @ 6A, 10V 2V @ 250μA 440pF @ 25V 20nC @ 5V 10A Tc 100V 4V 10V ±16V
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download 20 Weeks Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 68W Tc SWITCHING 0.051Ohm 55V SILICON N-Channel 40m Ω @ 17A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 28A 28A Tc 55V 110A 110 mJ 4V 10V ±16V
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download 10 Weeks Surface Mount Tape & Reel (TR) 1997 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 10mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 300W 23 ns 55V 300W Tc 80A 0.0052Ohm 48 ns SILICON N-Channel 5.2m Ω @ 80A, 10V 4V @ 230μA 4400pF @ 25V 155nC @ 10V 23ns 22 ns 20V 55V 80A Tc 700 mJ 10V ±20V
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download Through Hole Tube 2004 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 16A 3 AVALANCHE RATED TO-220-3 Full Pack Through Hole -55°C~150°C TJ 560V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 10 ns 500V 34W Tc 16A SWITCHING 0.28Ohm 50 ns SILICON N-Channel 280m Ω @ 10A, 10V 3.9V @ 675μA 1600pF @ 25V 66nC @ 10V 8ns 20V 16A Tc 48A 460 mJ 10V ±20V
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download 16 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 330W 18 ns 350W Tc 83A SWITCHING 0.015Ohm 25 ns SILICON N-Channel 15m Ω @ 33A, 10V 5V @ 250μA 4460pF @ 25V 110nC @ 10V 60ns 35 ns 30V 150V 75A 85A Tc 120 mJ 10V ±20V
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download 10 Weeks Tape & Reel (TR) 2008 yes Active 1 (Unlimited) 2 EAR99 175°C -55°C ROHS3 Compliant Tin 3 TO-263-3 not_compliant ENHANCEMENT MODE e3 GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 300W AEC-Q101 1 DRAIN Halogen Free N-CHANNEL Single 300W 23 ns 40V 80A METAL-OXIDE SEMICONDUCTOR 46 ns 63ns 22 ns 20V 40V 40V 660 mJ 4.4nF 3.7 mΩ
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14 Weeks Through Hole Tube 2013 HEXFET® Not For New Designs 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Single 4V 75W Tc 86A N-Channel 3.4m Ω @ 75A, 10V 4V @ 150μA 6600pF @ 48V 195nC @ 10V 86A Tc 60V 10V ±20V
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download 18 Weeks Through Hole Tube 2008 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 136W 11 ns 200V 136W Tc 34A SWITCHING 0.032Ohm 21 ns SILICON N-Channel 32m Ω @ 34A, 10V 4V @ 90μA 2350pF @ 100V 29nC @ 10V 9ns 4 ns 20V 34A Tc 10V ±20V
BSS84P-E6327 BSS84P-E6327 Infineon Technologies $0.00
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download Surface Mount Tape & Reel (TR) 2002 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead -170mA 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-236-3, SC-59, SOT-23-3 unknown Surface Mount -55°C~150°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 260 40 3 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE -930mV 360mW 360mW Ta 170mA SWITCHING 8Ohm SILICON P-Channel 8 Ω @ 170mA, 10V 2V @ 20μA 19pF @ 25V 1.5nC @ 10V 16.2ns 20V 170mA Ta 60V 4.5V 10V ±20V
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download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) Through Hole 175°C -40°C 10.6426mm ROHS3 Compliant Lead Free -83A No 3 TO-220-3 No SVHC 16.51mm 4.82mm 15MOhm Through Hole -40°C~175°C TJ -150V MOSFET (Metal Oxide) 1 Single 330W 18 ns 3V 15mOhm TO-220AB 330W Tc 110 ns 83A 24 ns N-Channel 15mOhm @ 33A, 10V 5V @ 250μA 4530pF @ 25V 107nC @ 10V 30V 150V 150V 30 V 83A Tc 150V 4.53nF 10V ±30V 15 mΩ
SPP20N60S5 SPP20N60S5 Infineon Technologies $0.00
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download 8 Weeks Through Hole Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 Through Hole 8.64mm RoHS Compliant Contains Lead Tin 20A No 3 AVALANCHE RATED TO-220-3 No SVHC 4.4mm 10.26mm Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE 3 FET General Purpose Power 1 TO-220AB DRAIN Halogen Free Single 208W 120 ns 4.5V 600V 208W Tc 20A SWITCHING 140 ns SILICON N-Channel 190m Ω @ 13A, 10V 5.5V @ 1mA 3000pF @ 25V 103nC @ 10V 25ns 30 ns 20V 600V 600V 4.5 V 20A Tc 40A 690 mJ 10V ±20V