Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Forward Voltage | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Reverse Recovery Time | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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BUZ32 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2005 | SIPMOS® | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 9.5A | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 75W | 75W Tc | 9.5A | 0.4Ohm | 55 ns | SILICON | N-Channel | 400m Ω @ 6A, 10V | 4V @ 1mA | 530pF @ 25V | 40ns | 30 ns | 20V | 200V | 9.5A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
BSO104N03S | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 8 | EAR99 | RoHS Compliant | Lead Free | 13A | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | NOT SPECIFIED | 8 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 1.56W | 5 ns | 1.56W Ta | 10A | SWITCHING | 0.0097Ohm | 21 ns | SILICON | N-Channel | 9.7m Ω @ 13A, 10V | 2V @ 30μA | 2130pF @ 15V | 16nC @ 5V | 4.2ns | 4.2 ns | 20V | 30V | 10A Tc | 110 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF2907ZS-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | HEXFET® | Obsolete | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 10.3378mm | RoHS Compliant | Lead Free | 160A | No | 7 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | 4.5466mm | 10.05mm | 4.5MOhm | Surface Mount | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 21 ns | 4V | 35 ns | 300W Tc | 53 ns | 160A | SWITCHING | 92 ns | SILICON | N-Channel | 3.8m Ω @ 110A, 10V | 4V @ 250μA | 7580pF @ 25V | 260nC @ 10V | 90ns | 44 ns | 20V | 75V | 75V | 4 V | 160A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFR3518PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2002 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 110W Tc | N-Channel | 29m Ω @ 18A, 10V | 4V @ 250μA | 1710pF @ 25V | 56nC @ 10V | 38A Tc | 80V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7805PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 13A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 11MOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | FET General Purpose Power | 1 | Single | 2.5W | 16 ns | 3V | 2.5W Ta | 13A | SWITCHING | 38 ns | SILICON | N-Channel | 11m Ω @ 7A, 4.5V | 3V @ 250μA | 31nC @ 5V | 20ns | 16 ns | 12V | 30V | 3 V | 13A Ta | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
IRF7455PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G8 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.0075Ohm | 30V | SILICON | N-Channel | 7.5m Ω @ 15A, 10V | 2V @ 250μA | 3480pF @ 25V | 56nC @ 5V | 15A | 15A Ta | 30V | 120A | 200 mJ | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRF7469PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 2.5W Ta | N-Channel | 17m Ω @ 9A, 10V | 3V @ 250μA | 2000pF @ 20V | 23nC @ 4.5V | 9A Ta | 40V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7832PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tube | 2005 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~155°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G8 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.004Ohm | 30V | SILICON | N-Channel | 4m Ω @ 20A, 10V | 2.32V @ 250μA | 4310pF @ 15V | 51nC @ 4.5V | 20A | 20A Ta | 30V | 160A | 260 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7493PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G8 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Tc | SWITCHING | 0.015Ohm | 80V | SILICON | N-Channel | 15m Ω @ 5.6A, 10V | 4V @ 250μA | 1510pF @ 25V | 53nC @ 10V | 9.3A | 9.3A Tc | 80V | 74A | 180 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR120NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Tube | 1998 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 48W Tc | SWITCHING | 0.21Ohm | 100V | SILICON | N-Channel | 210m Ω @ 5.6A, 10V | 4V @ 250μA | 330pF @ 25V | 25nC @ 10V | 9.4A | 9.4A Tc | 100V | 38A | 91 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRF7452PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tube | 2001 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | 4.5A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 60mOhm | Surface Mount | -55°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2.5W | 9.5 ns | 5.5V | 2.5W Ta | 120 ns | 4.5A | SWITCHING | 16 ns | SILICON | N-Channel | 60m Ω @ 2.7A, 10V | 5.5V @ 250μA | 930pF @ 25V | 50nC @ 10V | 11ns | 13 ns | 30V | 100V | 100V | 5.5 V | 4.5A Ta | 36A | 200 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
IRFR2407PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2000 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 110W Tc | N-Channel | 26m Ω @ 25A, 10V | 4V @ 250μA | 2400pF @ 25V | 110nC @ 10V | 42A Tc | 75V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR5305TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 10.3886mm | ROHS3 Compliant | Lead Free | -31A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.73mm | Surface Mount | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W | 14 ns | 110W Tc | -31A | SWITCHING | 0.065Ohm | 39 ns | P-Channel | 65m Ω @ 16A, 10V | 4V @ 250μA | 1200pF @ 25V | 63nC @ 10V | 66ns | 63 ns | 20V | -55V | 31A Tc | 55V | 280 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRLR2905PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2000 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W Tc | SWITCHING | 0.03Ohm | 55V | SILICON | N-Channel | 27m Ω @ 25A, 10V | 2V @ 250μA | 1700pF @ 25V | 48nC @ 5V | 20A | 42A Tc | 55V | 160A | 210 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRFR3711PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | 6.7056mm | RoHS Compliant | Lead Free | 110A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 120W | 12 ns | 2.5W Ta 120W Tc | 110A | SWITCHING | 0.0065Ohm | 17 ns | SILICON | N-Channel | 6.5m Ω @ 15A, 10V | 3V @ 250μA | 2980pF @ 10V | 44nC @ 4.5V | 220ns | 12 ns | 20V | 20V | 3 V | 100A Tc | 440A | 460 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFZ44NSTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2001 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W Ta 94W Tc | SWITCHING | 0.0175Ohm | 55V | SILICON | N-Channel | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 1470pF @ 25V | 63nC @ 10V | 49A | 49A Tc | 55V | 160A | 150 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRLL2705PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 1997 | HEXFET® | Discontinued | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G4 | FET General Purpose Power | Not Qualified | 1 | SINGLE | DRAIN | 1W Ta | 0.051Ohm | 55V | SILICON | N-Channel | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 870pF @ 25V | 48nC @ 10V | 5.2A | 3.8A Ta | 55V | 30A | 110 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRL540NSTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 10.668mm | ROHS3 Compliant | Lead Free | 36A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Surface Mount | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 11 ns | 3.8W Ta 140W Tc | 36A | SWITCHING | 39 ns | N-Channel | 44m Ω @ 18A, 10V | 2V @ 250μA | 1800pF @ 25V | 74nC @ 5V | 81ns | 62 ns | 16V | 100V | 36A Tc | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
IRLR8113PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 175°C | -55°C | 6.7056mm | RoHS Compliant | Lead Free | 94A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 6MOhm | Surface Mount | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | 1 | Single | 89W | 9.2 ns | 2.25V | 7.4mOhm | D-Pak | 89W Tc | 49 ns | 94A | 15 ns | N-Channel | 6mOhm @ 15A, 10V | 2.25V @ 250μA | 2920pF @ 15V | 32nC @ 4.5V | 3.8ns | 10 ns | 20V | 30V | 94A Tc | 30V | 2.92nF | 4.5V 10V | ±20V | 6 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
IRLR120NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Tube | 1998 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 48W Tc | N-Channel | 185m Ω @ 6A, 10V | 2V @ 250μA | 440pF @ 25V | 20nC @ 5V | 10A Tc | 100V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR2705PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 68W Tc | SWITCHING | 0.051Ohm | 55V | SILICON | N-Channel | 40m Ω @ 17A, 10V | 2V @ 250μA | 880pF @ 25V | 25nC @ 5V | 28A | 28A Tc | 55V | 110A | 110 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
IPB80N06S2H5ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10mm | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 300W | 23 ns | 55V | 300W Tc | 80A | 0.0052Ohm | 48 ns | SILICON | N-Channel | 5.2m Ω @ 80A, 10V | 4V @ 230μA | 4400pF @ 25V | 155nC @ 10V | 23ns | 22 ns | 20V | 55V | 80A Tc | 700 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
SPA16N50C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2004 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 16A | 3 | AVALANCHE RATED | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | 560V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 10 ns | 500V | 34W Tc | 16A | SWITCHING | 0.28Ohm | 50 ns | SILICON | N-Channel | 280m Ω @ 10A, 10V | 3.9V @ 675μA | 1600pF @ 25V | 66nC @ 10V | 8ns | 20V | 16A Tc | 48A | 460 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFS4321TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 330W | 18 ns | 350W Tc | 83A | SWITCHING | 0.015Ohm | 25 ns | SILICON | N-Channel | 15m Ω @ 33A, 10V | 5V @ 250μA | 4460pF @ 25V | 110nC @ 10V | 60ns | 35 ns | 30V | 150V | 75A | 85A Tc | 120 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IPB80N04S2H4ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Tin | 3 | TO-263-3 | not_compliant | ENHANCEMENT MODE | e3 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 300W | AEC-Q101 | 1 | DRAIN | Halogen Free | N-CHANNEL | Single | 300W | 23 ns | 40V | 80A | METAL-OXIDE SEMICONDUCTOR | 46 ns | 63ns | 22 ns | 20V | 40V | 40V | 660 mJ | 4.4nF | 3.7 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRFI7536GPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Through Hole | Tube | 2013 | HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | No SVHC | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 4V | 75W Tc | 86A | N-Channel | 3.4m Ω @ 75A, 10V | 4V @ 150μA | 6600pF @ 48V | 195nC @ 10V | 86A Tc | 60V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPI320N20N3GAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 136W | 11 ns | 200V | 136W Tc | 34A | SWITCHING | 0.032Ohm | 21 ns | SILICON | N-Channel | 32m Ω @ 34A, 10V | 4V @ 90μA | 2350pF @ 100V | 29nC @ 10V | 9ns | 4 ns | 20V | 34A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
BSS84P-E6327 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2002 | SIPMOS® | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Contains Lead | -170mA | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-236-3, SC-59, SOT-23-3 | unknown | Surface Mount | -55°C~150°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 260 | 40 | 3 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | -930mV | 360mW | 360mW Ta | 170mA | SWITCHING | 8Ohm | SILICON | P-Channel | 8 Ω @ 170mA, 10V | 2V @ 20μA | 19pF @ 25V | 1.5nC @ 10V | 16.2ns | 20V | 170mA Ta | 60V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRFB4228PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2007 | HEXFET® | Active | 1 (Unlimited) | Through Hole | 175°C | -40°C | 10.6426mm | ROHS3 Compliant | Lead Free | -83A | No | 3 | TO-220-3 | No SVHC | 16.51mm | 4.82mm | 15MOhm | Through Hole | -40°C~175°C TJ | -150V | MOSFET (Metal Oxide) | 1 | Single | 330W | 18 ns | 3V | 15mOhm | TO-220AB | 330W Tc | 110 ns | 83A | 24 ns | N-Channel | 15mOhm @ 33A, 10V | 5V @ 250μA | 4530pF @ 25V | 107nC @ 10V | 30V | 150V | 150V | 30 V | 83A Tc | 150V | 4.53nF | 10V | ±30V | 15 mΩ | |||||||||||||||||||||||||||||||||||||||||||
SPP20N60S5 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2005 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | Through Hole | 8.64mm | RoHS Compliant | Contains Lead | Tin | 20A | No | 3 | AVALANCHE RATED | TO-220-3 | No SVHC | 4.4mm | 10.26mm | Through Hole | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Halogen Free | Single | 208W | 120 ns | 4.5V | 600V | 208W Tc | 20A | SWITCHING | 140 ns | SILICON | N-Channel | 190m Ω @ 13A, 10V | 5.5V @ 1mA | 3000pF @ 25V | 103nC @ 10V | 25ns | 30 ns | 20V | 600V | 600V | 4.5 V | 20A Tc | 40A | 690 mJ | 10V | ±20V |
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