Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IPD135N03LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.41mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | TO-252AA | DRAIN | Single | 31W | 3 ns | 31W Tc | 30A | SWITCHING | 12 ns | SILICON | N-Channel | 13.5m Ω @ 30A, 10V | 2.2V @ 250μA | 1000pF @ 15V | 10nC @ 10V | 2.2 ns | 20V | 30A Tc | 30V | 210A | 20 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
IRFH5304TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 838.2μm | 5mm | 4.5MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 13 ns | 3.6W Ta 46W Tc | 79A | SWITCHING | 12 ns | SILICON | N-Channel | 4.5m Ω @ 47A, 10V | 2.35V @ 50μA | 2360pF @ 10V | 41nC @ 10V | 25ns | 6.6 ns | 20V | 30V | 2.35 V | 22A | 22A Ta 79A Tc | 320A | 46 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
BSO130P03SHXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | OptiMOS™ | yes | Active | 3 (168 Hours) | 8 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 8 | LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 1.56W | -30V | 1.56W Ta | 9.2A | SILICON | P-Channel | 13m Ω @ 11.7A, 10V | 2.2V @ 140μA | 3520pF @ 25V | 81nC @ 10V | 16ns | 25V | 9.2A Ta | 30V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
IPS80R1K2P7AKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 37W Tc | SWITCHING | 800V | SILICON | N-Channel | 1.2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 300pF @ 500V | 11nC @ 10V | 4.5A Tc | 800V | 11A | 10 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRFZ44ZLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | 51A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | 4.83mm | 4.826mm | 13.9MOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 80W | 14 ns | 80W Tc | 51A | SWITCHING | 33 ns | SILICON | N-Channel | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 1420pF @ 25V | 43nC @ 10V | 68ns | 41 ns | 20V | 55V | 51A Tc | 200A | 86 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
AUIRF3205Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 170W | 18 ns | 2V | 170W Tc | 75A | SWITCHING | 0.0065Ohm | 45 ns | SILICON | N-Channel | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 3450pF @ 25V | 110nC @ 10V | 95ns | 67 ns | 20V | 55V | 75A Tc | 440A | 250 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
SI4420DYTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 12.5A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 9mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | Single | 2.5W | 15 ns | 1V | 2.5W Ta | 12.5A | SWITCHING | 55 ns | SILICON | N-Channel | 9m Ω @ 12.5A, 10V | 1V @ 250μA | 2240pF @ 15V | 78nC @ 10V | 10ns | 47 ns | 20V | 30V | 1 V | 12.5A Ta | 50A | 400 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
BSZ240N12NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N5 | FET General Purpose Powers | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 66W | 120V | 66W Tc | 37A | SWITCHING | 0.024Ohm | SILICON | N-Channel | 24m Ω @ 20A, 10V | 4V @ 35μA | 1900pF @ 60V | 27nC @ 10V | 4ns | 20V | 37A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
BSZ025N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40V | 2.1W Ta 69W Tc | 40A | SWITCHING | 0.0032Ohm | SILICON | N-Channel | 2.5m Ω @ 20A, 10V | 2V @ 250μA | 3680pF @ 20V | 52nC @ 10V | 22A | 22A Ta 40A Tc | 160A | 130 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
AUIRLL014NTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Automotive, AEC-Q101, HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 6.7mm | ROHS3 Compliant | No | 4 | TO-261-4, TO-261AA | No SVHC | 1.8mm | 3.7mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 1W | 5.1 ns | 2V | 1W Ta | 2A | 14 ns | N-Channel | 140m Ω @ 2A, 10V | 2V @ 250μA | 230pF @ 25V | 14nC @ 10V | 4.9ns | 2.9 ns | 16V | 55V | 2.8A | 2A Ta | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
IPZ40N04S5L2R8ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | 1.15mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-N3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 71W | 4 ns | 40V | 71W Tc | 40A | 175°C | 20 ns | SILICON | N-Channel | 2.8m Ω @ 20A, 10V | 2V @ 30μA | 2800pF @ 25V | 52nC @ 10V | 16V | 40V | 40A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
BSC098N10NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 69W | 10 ns | 100V | 2.5W Ta 69W Tc | 11A | 150°C | SWITCHING | 17 ns | SILICON | N-Channel | 9.8m Ω @ 30A, 10V | 3.8V @ 36μA | 2100pF @ 50V | 28nC @ 10V | 5ns | 20V | 100V | 60A Tc | 240A | 30 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
IRF6668TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | 55A | No | 3 | DirectFET™ Isometric MZ | No SVHC | 533.4μm | 5.0546mm | Surface Mount | -40°C~150°C TJ | 80V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | FET General Purpose Power | 1 | DRAIN | Single | 89W | 19 ns | 4V | 2.8W Ta 89W Tc | 55mA | SWITCHING | 0.015Ohm | 7.1 ns | SILICON | N-Channel | 15m Ω @ 12A, 10V | 4.9V @ 100μA | 1320pF @ 25V | 31nC @ 10V | 13ns | 23 ns | 20V | 80V | 55A Tc | 170A | 24 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
BSZ097N10NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | 1 | DRAIN | Halogen Free | Single | 11 ns | 100V | 2.1W Ta 69W Tc | 40A | SWITCHING | 0.0097Ohm | 21 ns | SILICON | N-Channel | 9.7m Ω @ 20A, 10V | 3.8V @ 36μA | 2080pF @ 50V | 28nC @ 10V | 5ns | 5 ns | 20V | 8A | 8A Ta 40A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IPD60R180P7SAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.55mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 72W | 14 ns | 72W Tc | 18A | 150°C | SWITCHING | 85 ns | SILICON | N-Channel | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 1081pF @ 400V | 25nC @ 10V | 20V | 600V | 18A Tc | 53A | 56 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRFH8202TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Single | 3.6W | 28 ns | 1.8V | 3.6W Ta 160W Tc | 100A | 30 ns | N-Channel | 1.05m Ω @ 50A, 10V | 2.35V @ 150μA | 7174pF @ 13V | 110nC @ 10V | 46ns | 19 ns | 20V | 25V | 47A Ta 100A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRFH5015TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6.1468mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 900μm | 5.15mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 9.4 ns | 5V | 3.6W Ta 156W Tc | 56A | 150°C | SWITCHING | 14 ns | SILICON | N-Channel | 31m Ω @ 34A, 10V | 5V @ 150μA | 2300pF @ 50V | 50nC @ 10V | 9.7ns | 3.4 ns | 20V | 150V | 10A Ta 56A Tc | 220A | 230 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
IRF7854TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 30 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 9.4 ns | 2.5W Ta | 10A | SWITCHING | 15 ns | SILICON | N-Channel | 13.4m Ω @ 10A, 10V | 4.9V @ 100μA | 1620pF @ 25V | 41nC @ 10V | 8.5ns | 8.6 ns | 20V | 80V | 10A Ta | 79A | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRF3205ZSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 6.5MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 170W | 18 ns | 170W Tc | 75A | SWITCHING | 45 ns | SILICON | N-Channel | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 3450pF @ 25V | 110nC @ 10V | 95ns | 67 ns | 20V | 55V | 20 V | 75A Tc | 440A | 250 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
IRLH5034TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6.1468mm | ROHS3 Compliant | Lead Free | No | 8 | HIGH RELIABILITY | 8-PowerVDFN | 990.6μm | 5.15mm | 3.2MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 156W | 21 ns | 3.6W Ta 156W Tc | 100A | SWITCHING | 31 ns | SILICON | N-Channel | 2.4m Ω @ 50A, 10V | 2.5V @ 150μA | 4730pF @ 25V | 82nC @ 10V | 54ns | 21 ns | 16V | 40V | 29A | 29A Ta 100A Tc | 400A | 360 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||
IPB057N06NATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Cut Tape (CT) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 83W | 12 ns | 60V | 3W Ta 83W Tc | 45A | SWITCHING | 0.0057Ohm | 20 ns | SILICON | N-Channel | 5.7m Ω @ 45A, 10V | 2.8V @ 36μA | 2000pF @ 30V | 27nC @ 10V | 12ns | 7 ns | 20V | 60V | 17A Ta 45A Tc | 60 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFH8307TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-N5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 26 ns | 1.8V | 3.6W Ta 156W Tc | 100A | SWITCHING | 31 ns | SILICON | N-Channel | 1.3m Ω @ 50A, 10V | 2.35V @ 150μA | 7200pF @ 15V | 120nC @ 10V | 30ns | 13 ns | 20V | 30V | 42A | 42A Ta 100A Tc | 400A | 420 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFH5010TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 838.2μm | 5.0038mm | 9MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | DRAIN | Single | 250W | 9 ns | 2V | 3.6W Ta 250W Tc | 100A | SWITCHING | 27 ns | SILICON | N-Channel | 9m Ω @ 50A, 10V | 4V @ 150μA | 4340pF @ 25V | 98nC @ 10V | 12ns | 8.6 ns | 20V | 100V | 2 V | 13A Ta 100A Tc | 400A | 227 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
IPB123N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 94W | 14 ns | 94W Tc | 58A | SWITCHING | 24 ns | SILICON | N-Channel | 12.3m Ω @ 46A, 10V | 3.5V @ 46μA | 2500pF @ 50V | 35nC @ 10V | 8ns | 5 ns | 20V | 58A Tc | 100V | 70 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFH5053TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 2 (1 Year) | 3 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | 8 | 8-PowerVDFN | No SVHC | 939.8μm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 30 | R-PDSO-N3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.1W | 8.6 ns | 3.7V | 3.1W Ta 8.3W Tc | 9.3mA | SWITCHING | 18 ns | SILICON | N-Channel | 18m Ω @ 9.3A, 10V | 4.9V @ 100μA | 1510pF @ 50V | 36nC @ 10V | 14.6ns | 9.9 ns | 20V | 100V | 3.7 V | 9.3A | 9.3A Ta 46A Tc | 75A | 10V | ±20V | |||||||||||||||||||||||||||||
BSC0500NSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 30V | 2.5W Ta 69W Tc | 100A | SWITCHING | 0.0017Ohm | SILICON | N-Channel | 1.3m Ω @ 30A, 10V | 2V @ 250μA | 3300pF @ 15V | 52nC @ 10V | 35A | 35A Ta 100A Tc | 400A | 40 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRL2203NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 116A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.572mm | 9.65mm | 7MOhm | Surface Mount | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 170W | 11 ns | 3V | 3.8W Ta 180W Tc | 84 ns | 116A | SWITCHING | 23 ns | SILICON | N-Channel | 7m Ω @ 60A, 10V | 3V @ 250μA | 3290pF @ 25V | 60nC @ 4.5V | 160ns | 66 ns | 16V | 30V | 30V | 3 V | 75A | 116A Tc | 400A | 290 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||
IPD12CN10NGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 3 (168 Hours) | 2 | ROHS3 Compliant | Contains Lead | Tin | 3 | FAST SWITCHING | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | TO-252AA | DRAIN | Halogen Free | Single | 125W | 17 ns | 3V | 100V | 125W Tc | 67A | SWITCHING | 0.0124Ohm | 32 ns | SILICON | N-Channel | 12.4m Ω @ 67A, 10V | 4V @ 83μA | 4320pF @ 50V | 65nC @ 10V | 21ns | 8 ns | 20V | 100V | 67A Tc | 268A | 154 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
BSC040N08NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | DRAIN | Halogen Free | Single | 104W | 14 ns | 3V | 80V | 2.5W Ta 104W Tc | 100A | 150°C | SWITCHING | 0.004Ohm | 25 ns | SILICON | N-Channel | 4m Ω @ 50A, 10V | 3.8V @ 67μA | 3900pF @ 40V | 54nC @ 10V | 8ns | 6 ns | 20V | 80V | 100A Tc | 400A | 6V 10V | ±20V | ||||||||||||||||||||||||||||
IPD60R280CFD7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ CFD7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 51W Tc | SWITCHING | 0.28Ohm | 600V | SILICON | N-Channel | 280m Ω @ 3.6A, 10V | 4.5V @ 180μA | 807pF @ 400V | 18nC @ 10V | 9A | 9A Tc | 650V | 31A | 36 mJ | 10V | ±20V |
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