Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Forward Voltage | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IPP12CN10LGXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | LOGIC LEVL COMPATIBLE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 125W | 14 ns | 100V | 125W Tc | 69A | SWITCHING | 39 ns | SILICON | N-Channel | 12m Ω @ 69A, 10V | 2.4V @ 83μA | 5600pF @ 50V | 58nC @ 10V | 9ns | 5 ns | 20V | 69A Tc | 276A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IPP50R280CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 8 ns | 500V | 92W Tc | 13A | SWITCHING | 0.28Ohm | 40 ns | SILICON | N-Channel | 280m Ω @ 4.2A, 13V | 3.5V @ 350μA | 773pF @ 100V | 32.6nC @ 10V | 6.4ns | 7.6 ns | 20V | Super Junction | 13A Tc | 42.9A | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IPA083N10N5XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-220-3 Full Pack | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | TO-220AB | ISOLATED | Halogen Free | Single | 15 ns | 100V | 36W Tc | 44A | SWITCHING | 0.0083Ohm | 24 ns | SILICON | N-Channel | 8.3m Ω @ 44A, 10V | 3.8V @ 49μA | 2730pF @ 50V | 37nC @ 10V | 5ns | 5 ns | 20V | 100V | 44A Tc | 70 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPP60R280CFD7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ CFD7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 52W Tc | SWITCHING | 0.28Ohm | 600V | SILICON | N-Channel | 280m Ω @ 3.6A, 10V | 4.5V @ 180μA | 807pF @ 400V | 18nC @ 10V | 9A | 9A Tc | 650V | 31A | 36 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP040N06N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 188W | 30 ns | 60V | 188W Tc | 90A | SWITCHING | 0.004Ohm | 40 ns | SILICON | N-Channel | 4m Ω @ 90A, 10V | 4V @ 90μA | 11000pF @ 30V | 98nC @ 10V | 70ns | 5 ns | 20V | 90A Tc | 165 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
SPP07N60C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2005 | CoolMOS™ | Not For New Designs | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 7.3A | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | Halogen Free | 83W | 6 ns | 600V | 600mOhm | PG-TO220-3-1 | 83W Tc | 7.3A | 60 ns | N-Channel | 600mOhm @ 4.6A, 10V | 3.9V @ 350μA | 790pF @ 25V | 27nC @ 10V | 3.5ns | 7 ns | 20V | 650V | 7.3A Tc | 650V | 790pF | 10V | ±20V | 600 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP029N06NAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tube | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 3W Ta 136W Tc | SWITCHING | 0.0029Ohm | 60V | SILICON | N-Channel | 2.9m Ω @ 100A, 10V | 2.8V @ 75μA | 4100pF @ 30V | 56nC @ 10V | 24A | 24A Ta 100A Tc | 60V | 400A | 110 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRLZ44Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2011 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 80W | 14 ns | 1V | 80W Tc | 51A | SWITCHING | 25 ns | SILICON | N-Channel | 13.5m Ω @ 31A, 10V | 3V @ 250μA | 1620pF @ 25V | 36nC @ 5V | 160ns | 42 ns | 16V | 55V | 51A Tc | 204A | 78 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
IRL1404ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 8.77mm | 4.82mm | 3.1MOhm | Through Hole | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 230W | 19 ns | 2.7V | 230W Tc | 39 ns | 75A | SWITCHING | 30 ns | SILICON | N-Channel | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 5080pF @ 25V | 110nC @ 5V | 180ns | 49 ns | 16V | 40V | 40V | 2.7 V | 200A | 75A Tc | 790A | 220 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
IPA045N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2005 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 39W | 25 ns | 100V | 39W Tc | 64A | SWITCHING | 0.0045Ohm | 50 ns | SILICON | N-Channel | 4.5m Ω @ 64A, 10V | 3.5V @ 150μA | 8410pF @ 50V | 117nC @ 10V | 47ns | 15 ns | 20V | 64A Tc | 256A | 540 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPP65R225C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | 9 ns | 650V | 63W Tc | 11A | 48 ns | N-Channel | 225m Ω @ 4.8A, 10V | 4V @ 240μA | 996pF @ 400V | 20nC @ 10V | 6ns | 10 ns | 20V | 11A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ0506NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 30V | 2.1W Ta 27W Tc | 40A | SWITCHING | 0.0053Ohm | SILICON | N-Channel | 4.4m Ω @ 20A, 10V | 2V @ 250μA | 950pF @ 15V | 15nC @ 10V | 2.4ns | 20V | 15A | 15A Ta 40A Tc | 160A | 20 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IPD65R650CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | CoolMOS™ CE | yes | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 650V | 86W Tc | 7A | SWITCHING | 0.65Ohm | SILICON | N-Channel | 650m Ω @ 2.1A, 10V | 3.5V @ 210μA | 440pF @ 100V | 23nC @ 10V | 7A Tc | 18A | 142 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR8259TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 48W | 8.4 ns | 48W Tc | 57A | SWITCHING | 0.0087Ohm | 9.1 ns | SILICON | N-Channel | 8.7m Ω @ 21A, 10V | 2.35V @ 25μA | 900pF @ 13V | 10nC @ 4.5V | 38ns | 8.9 ns | 20V | 25V | 42A | 57A Tc | 67 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF540ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Through Hole | Tube | 2003 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.54mm | ROHS3 Compliant | Contains Lead, Lead Free | 36A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 8.77mm | 4.69mm | 26.5Ohm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 250 | 30 | FET General Purpose Power | 1 | TO-220AB | 1.3V | DRAIN | Single | 92W | 15 ns | 4V | 92W Tc | 50 ns | 36A | SWITCHING | 43 ns | SILICON | N-Channel | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 1770pF @ 25V | 63nC @ 10V | 51ns | 39 ns | 20V | 100V | 100V | 4 V | 36A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRFZ34NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Through Hole | Tube | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | Tin | 29A | No | 3 | TO-220-3 | No SVHC | 2.54mm | 15.24mm | 4.69mm | 40mOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 56W | 7 ns | 4V | 68W Tc | 86 ns | 29A | 175°C | SWITCHING | 31 ns | SILICON | N-Channel | 40m Ω @ 16A, 10V | 4V @ 250μA | 700pF @ 25V | 34nC @ 10V | 49ns | 40 ns | 20V | 55V | 55V | 4 V | 29A Tc | 65 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRF1018EPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2002 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-220-3 | No SVHC | 9.017mm | 4.826mm | 8.4MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 110W | 13 ns | 4V | 110W Tc | 39 ns | 79A | SWITCHING | 55 ns | SILICON | N-Channel | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 2290pF @ 50V | 69nC @ 10V | 35ns | 46 ns | 20V | 60V | 79A Tc | 88 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFI540NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.6172mm | ROHS3 Compliant | Lead Free | 20A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 Full Pack | No SVHC | 9.8mm | 4.826mm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 40 | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 42W | 8.2 ns | 4V | 54W Tc | 250 ns | 20A | SWITCHING | 0.052Ohm | 2.5kV | 44 ns | SILICON | N-Channel | 52m Ω @ 11A, 10V | 4V @ 250μA | 1400pF @ 25V | 94nC @ 10V | 39ns | 33 ns | 20V | 100V | 100V | 4 V | 20A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRF1404STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 162A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | 4MOhm | Surface Mount | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 17 ns | 3.8W Ta 200W Tc | 162A | SWITCHING | 72 ns | SILICON | N-Channel | 4m Ω @ 95A, 10V | 4V @ 250μA | 7360pF @ 25V | 200nC @ 10V | 140ns | 26 ns | 20V | 40V | 75A | 162A Tc | 650A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRF9520NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | 10.54mm | ROHS3 Compliant | Lead Free | Tin | -6.8A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 2.54mm | 15.24mm | 4.69mm | 480mOhm | Through Hole | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 250 | 30 | Other Transistors | 48W | 1 | TO-220AB | DRAIN | Single | 48W | 14 ns | -4V | 150 ns | -6.8A | SWITCHING | 28 ns | P-Channel | 480m Ω @ 4A, 10V | 4V @ 250μA | 350pF @ 25V | 27nC @ 10V | 47ns | 31 ns | 20V | -100V | -100V | -4 V | 6.8A Tc | 100V | 27A | ||||||||||||||||||||||||||||||||||||
IPD042P03L3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | -1.5V | 150W Tc | 70A | SWITCHING | 0.0068Ohm | SILICON | P-Channel | 4.2m Ω @ 70A, 10V | 2V @ 270μA | 12400pF @ 15V | 175nC @ 10V | 70A Tc | 30V | 280A | 269 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF5210LPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 10.54mm | ROHS3 Compliant | Contains Lead | -40A | No | 3 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.652mm | 4.69mm | 60mOhm | Through Hole | -55°C~150°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | Other Transistors | 1 | DRAIN | Single | 200W | 14 ns | 4V | 3.1W Ta 170W Tc | -40A | SWITCHING | 72 ns | SILICON | P-Channel | 60m Ω @ 38A, 10V | 4V @ 250μA | 2780pF @ 25V | 230nC @ 10V | 63ns | 55 ns | 20V | -100V | 100V | 4 V | 38A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPP052N06L3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 11 ns | 60V | 115W Tc | 80A | SWITCHING | 0.005Ohm | 56 ns | SILICON | N-Channel | 5m Ω @ 80A, 10V | 2.2V @ 58μA | 8400pF @ 30V | 50nC @ 4.5V | 5ns | 12 ns | 20V | 80A Tc | 77 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
SPA02N80C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED, HIGH VOLTAGE | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 30.5W Tc | SWITCHING | 800V | SILICON | N-Channel | 2.7 Ω @ 1.2A, 10V | 3.9V @ 120μA | 290pF @ 100V | 16nC @ 10V | 2A | 2A Tc | 800V | 6A | 90 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IPAW60R380CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2013 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-220-3 Full Pack | No SVHC | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 3V | 31W Tc | 15A | SWITCHING | 600V | SILICON | N-Channel | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 700pF @ 100V | 32nC @ 10V | Super Junction | 15A Tc | 600V | 210 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IPS70R1K4P7SAKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2002 | CoolMOS™ P7 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | not_compliant | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 22.7W Tc | N-Channel | 1.4 Ω @ 700mA, 10V | 3.5V @ 40μA | 158pF @ 400V | 4.7nC @ 10V | 4A Tc | 700V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2003 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.54mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-220-3 | No SVHC | 8.77mm | 4.69mm | 7.5MOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 140W | 18 ns | 140W Tc | 33 ns | 75A | SWITCHING | 36 ns | SILICON | N-Channel | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 2840pF @ 25V | 95nC @ 10V | 150ns | 92 ns | 20V | 55V | 55V | 4 V | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRL7833PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | Tin | 150A | No | 3 | TO-220-3 | No SVHC | 8.763mm | 4.69mm | 3.8MOhm | Through Hole | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 140W | 18 ns | 2.3V | 140W Tc | 63 ns | 150A | SWITCHING | 21 ns | SILICON | N-Channel | 3.8m Ω @ 38A, 10V | 2.3V @ 250μA | 4170pF @ 15V | 47nC @ 4.5V | 50ns | 6.9 ns | 20V | 30V | 2.3 V | 75A | 150A Tc | 600A | 560 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRFB7446PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 99W | 11 ns | 3V | 99W Tc | 22 ns | 120A | SWITCHING | 33 ns | SILICON | N-Channel | 3.3m Ω @ 70A, 10V | 3.9V @ 100μA | 3183pF @ 25V | 93nC @ 10V | 34ns | 23 ns | 20V | 40V | 3 V | 120A Tc | 492A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IPP042N03LGXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-220-3 | No SVHC | 15.95mm | 4.57mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | TO-220AB | Halogen Free | Single | 79W | 7.4 ns | 1V | 30V | 79W Tc | 70A | SWITCHING | 0.006Ohm | 28 ns | SILICON | N-Channel | 4.2m Ω @ 30A, 10V | 2.2V @ 250μA | 3900pF @ 15V | 38nC @ 10V | 5.6ns | 4.4 ns | 20V | 30V | 70A Tc | 400A | 60 mJ | 4.5V 10V | ±20V |
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