Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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BSS225H6327FTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2011 | SIPMOS® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 4.5mm | ROHS3 Compliant | Contains Lead | Tin | 90mA | 3 | LOGIC LEVEL COMPATIBLE | TO-243AA | 1.5mm | 2.5mm | Surface Mount | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | DRAIN | Single | 1W | 14 ns | 600V | 1W Ta | 90mA | 62 ns | SILICON | N-Channel | 45 Ω @ 90mA, 10V | 2.3V @ 94μA | 131pF @ 25V | 5.8nC @ 10V | 38ns | 41 ns | 20V | 600V | 0.09A | 90mA Ta | 4.4 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IPD60R2K1CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ CE | yes | Active | 3 (168 Hours) | 2 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 600V | 38W Tc | 2.3A | SWITCHING | SILICON | N-Channel | 2.1 Ω @ 760mA, 10V | 3.5V @ 60μA | 140pF @ 100V | 6.7nC @ 10V | 2.3A Tc | 6A | 11 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF7601TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | No | 8 | ULTRA LOW RESISTANCE | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 860μm | 3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | SINGLE WITH BUILT-IN DIODE | 1.8W | 5.1 ns | 1.8W Ta | 5.7A | SWITCHING | 0.035Ohm | 24 ns | SILICON | N-Channel | 35m Ω @ 3.8A, 4.5V | 700mV @ 250μA | 650pF @ 15V | 22nC @ 4.5V | 47ns | 32 ns | 12V | 20V | 5.7A Ta | 30A | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
IRLR2705TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 24A | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 40mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 46W | 8.9 ns | 2V | 68W Tc | 110 ns | 28A | SWITCHING | 21 ns | SILICON | N-Channel | 40m Ω @ 17A, 10V | 2V @ 250μA | 880pF @ 25V | 25nC @ 5V | 100ns | 29 ns | 16V | 55V | 55V | 2 V | 28A Tc | 4V 10V | ±16V | ||||||||||||||||||||||||
BSC079N03LSCGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W | 3 ns | 2.5W Ta 30W Tc | 14A | SWITCHING | 30V | 14 ns | SILICON | N-Channel | 7.9m Ω @ 30A, 10V | 2.2V @ 250μA | 1600pF @ 15V | 19nC @ 10V | 2.4ns | 20V | 14A Ta 50A Tc | 30V | 200A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
BSZ180P03NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40W | -30V | 2.1W Ta 40W Tc | 39.6A | SWITCHING | SILICON | P-Channel | 18m Ω @ 20A, 10V | 3.1V @ 48μA | 2220pF @ 15V | 30nC @ 10V | 11ns | 25V | 9A | 9A Ta 39.6A Tc | 30V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||
IRF7201TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 7.3A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 30mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Single | 2.5W | 7 ns | 1V | 2.5W Tc | 73 ns | 7A | SWITCHING | 21 ns | SILICON | N-Channel | 30m Ω @ 7.3A, 10V | 1V @ 250μA | 550pF @ 25V | 28nC @ 10V | 35ns | 19 ns | 20V | 30V | 30V | 1 V | 7.3A Tc | 70 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
BSC080N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Tin | No | 8 | AVALANCHE RATED | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 35W | 10 ns | 2.5W Ta 35W Tc | 13A | SWITCHING | 30V | 10 ns | SILICON | N-Channel | 8m Ω @ 30A, 10V | 2V @ 250μA | 2100pF @ 15V | 27nC @ 10V | 5.4ns | 5.6 ns | 20V | 13A Ta 53A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BSZ100N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 30V | 2.1W Ta 30W Tc | 12A | SWITCHING | SILICON | N-Channel | 10m Ω @ 20A, 10V | 2.2V @ 250μA | 1500pF @ 15V | 17nC @ 10V | 2.6ns | 20V | 12A Ta 40A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BSZ120P03NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 52W | 13 ns | -2.5V | -30V | 2.1W Ta 52W Tc | 40A | SWITCHING | 0.02Ohm | 23 ns | SILICON | P-Channel | 12m Ω @ 20A, 10V | 3.1V @ 73μA | 3360pF @ 15V | 45nC @ 10V | 11ns | 5 ns | 25V | 11A Ta 40A Tc | 30V | 73 mJ | 6V 10V | ±25V | |||||||||||||||||||||||||||||
BSC090N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 30V | 2.5W Ta 32W Tc | 12A | SWITCHING | SILICON | N-Channel | 9m Ω @ 30A, 10V | 2V @ 250μA | 1900pF @ 15V | 24nC @ 10V | 5ns | 16V | 12A Ta 48A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BSZ088N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 30V | 2.1W Ta 35W Tc | 12A | SWITCHING | SILICON | N-Channel | 8.8m Ω @ 20A, 10V | 2.2V @ 250μA | 1700pF @ 15V | 21nC @ 10V | 2.8ns | 20V | 40A | 12A Ta 40A Tc | 25 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IPN60R600P7SATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-261-3 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 7W Tc | SWITCHING | 0.6Ohm | 600V | SILICON | N-Channel | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 363pF @ 400V | 9nC @ 10V | 6A Tc | 600V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRF9321TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 7.2MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 21 ns | -1.8V | 2.5W Ta | -15A | 150°C | SWITCHING | 185 ns | SILICON | P-Channel | 7.2m Ω @ 15A, 10V | 2.4V @ 50μA | 2590pF @ 25V | 98nC @ 10V | 79ns | 145 ns | 20V | -30V | -1.8 V | 15A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
IPN70R600P7SATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-261-3 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.9W Tc | SWITCHING | 0.6Ohm | 700V | SILICON | N-Channel | 600m Ω @ 1.8A, 10V | 3.5V @ 90μA | 364pF @ 400V | 10.5nC @ 10V | 8.5A Tc | 700V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
IPD78CN10NGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 31W | 9 ns | 100V | 31W Tc | 13A | SWITCHING | 0.078Ohm | 13 ns | SILICON | N-Channel | 78m Ω @ 13A, 10V | 4V @ 12μA | 716pF @ 50V | 11nC @ 10V | 4ns | 3 ns | 20V | 13A Tc | 52A | 17 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFB4019PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2006 | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 19.8mm | 4.82mm | 95MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 80mW | 7 ns | 4.9V | 80W Tc | 96 ns | 17A | 175°C | AMPLIFIER | 12 ns | SILICON | N-Channel | 95m Ω @ 10A, 10V | 4.9V @ 50μA | 800pF @ 50V | 20nC @ 10V | 13ns | 7.8 ns | 20V | 150V | 150V | 4.9 V | 17A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||
IPA086N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 37.5W | 16 ns | 100V | 37.5W Tc | 45A | SWITCHING | 0.0086Ohm | 27 ns | SILICON | N-Channel | 8.6m Ω @ 45A, 10V | 3.5V @ 75μA | 3980pF @ 50V | 55nC @ 10V | 10ns | 8 ns | 20V | 45A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BUZ30AHXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2005 | SIPMOS® | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | 3 | R-PSFM-T3 | 1 | SINGLE | TO-220AB | Halogen Free | 125W | 200V | 125W Tc | 21A | SILICON | N-Channel | 130m Ω @ 13.5A, 10V | 4V @ 1mA | 1900pF @ 25V | 70ns | 20V | 21A Tc | 84A | 450 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
BSO200P03SHXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | no | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | Tin | LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-G8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | -30V | 1.56W Ta | 7.4A | 0.02Ohm | SILICON | P-Channel | 20m Ω @ 9.1A, 10V | 1.5V @ 100μA | 2330pF @ 25V | 54nC @ 10V | 11ns | 25V | 7.4A Ta | 30V | 36.4A | 98 mJ | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
BSC084P03NS3EGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | No | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 16.4 ns | -30V | 2.5W Ta 69W Tc | 14.9A | SWITCHING | 33.3 ns | SILICON | P-Channel | 8.4m Ω @ 50A, 10V | 3V @ 110μA | 4240pF @ 15V | 57.7nC @ 10V | 133.5ns | 8.1 ns | 25V | 14.9A Ta 78.6A Tc | 30V | 200A | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||
IRFR540ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.26mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 91W | 14 ns | 91W Tc | 35A | SWITCHING | 0.0285Ohm | 43 ns | SILICON | N-Channel | 28.5m Ω @ 21A, 10V | 4V @ 50μA | 1690pF @ 25V | 59nC @ 10V | 42ns | 34 ns | 20V | 100V | 35A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||
IPA60R1K0CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2013 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 600V | 26W Tc | 6.8A | SWITCHING | 1Ohm | SILICON | N-Channel | 1 Ω @ 1.5A, 10V | 3.5V @ 130μA | 280pF @ 100V | 13nC @ 10V | Super Junction | 6.8A Tc | 12A | 46 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFR3711TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 100A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | 6.5MOhm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 120W | 12 ns | 2.5W Ta 120W Tc | 110A | SWITCHING | 17 ns | SILICON | N-Channel | 6.5m Ω @ 15A, 10V | 3V @ 250μA | 2980pF @ 10V | 44nC @ 4.5V | 220ns | 12 ns | 20V | 20V | 100A Tc | 440A | 460 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
IRFR9N20DTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2000 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 86W Tc | SWITCHING | 0.38Ohm | 200V | SILICON | N-Channel | 380m Ω @ 5.6A, 10V | 5.5V @ 250μA | 560pF @ 25V | 27nC @ 10V | 9.4A | 9.4A Tc | 200V | 38A | 100 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
IPD60N10S412ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 6 ns | 100V | 94W Tc | 60A | 0.0122Ohm | 9 ns | SILICON | N-Channel | 12.2m Ω @ 60A, 10V | 3.5V @ 46μA | 2470pF @ 25V | 34nC @ 10V | 3ns | 13 ns | 20V | 60A Tc | 240A | 120 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
BSV236SPH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2000 | OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2mm | ROHS3 Compliant | Contains Lead | Tin | -1.5A | 6 | AVALANCHE RATED | 6-VSSOP, SC-88, SOT-363 | 1.25mm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 560mW | -20V | 560mW Ta | 1.5A | SILICON | P-Channel | 175m Ω @ 1.5A, 4.5V | 1.2V @ 8μA | 228pF @ 15V | 5.7nC @ 4.5V | 8.5ns | 12V | 1.5A Ta | 20V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
IRLHS6242TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | 2.1mm | ROHS3 Compliant | Lead Free | No | 6 | 6-PowerVDFN | No SVHC | 950μm | 2.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FET General Purpose Power | 1 | DRAIN | Single | 9.6W | 5.8 ns | 800mV | 1.98W Ta 9.6W Tc | 10A | SWITCHING | 19 ns | SILICON | N-Channel | 11.7m Ω @ 8.5A, 4.5V | 1.1V @ 10μA | 1110pF @ 10V | 14nC @ 4.5V | 15ns | 13 ns | 12V | 20V | 800 mV | 10A Ta 12A Tc | 88A | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
BSC0909NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 9.6 ns | 30V | 2.5W Ta 27W Tc | 44A | SWITCHING | 0.0091Ohm | 8.9 ns | SILICON | N-Channel | 9.2m Ω @ 20A, 10V | 2V @ 250μA | 1110pF @ 15V | 15nC @ 10V | 4.4ns | 5.4 ns | 20V | 12A | 12A Ta 44A Tc | 34V | 176A | 10 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
IPD70R1K4P7SAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | yes | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 23W Tc | N-Channel | 1.4 Ω @ 700mA, 10V | 3.5V @ 40μA | 158pF @ 400V | 4.7nC @ 10V | 4A Tc | 700V | 10V | ±16V |
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