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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    BSC265N10LSFGATMA1 BSC265N10LSFGATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 LOGIC LEVEL COMPATIBLE 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 78W 1.85V 100V 78W Tc 40A SWITCHING 0.0265Ohm SILICON N-Channel 26.5m Ω @ 20A, 10V 2.4V @ 43μA 1600pF @ 50V 21nC @ 10V 24ns 20V 6.5A 6.5A Ta 40A Tc 4.5V 10V ±20V
    BSZ42DN25NS3GATMA1 BSZ42DN25NS3GATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 3 ns 250V 33.8W Tc 5A SWITCHING 0.425Ohm 8 ns SILICON N-Channel 425m Ω @ 2.5A, 10V 4V @ 13μA 430pF @ 100V 5.5nC @ 10V 2ns 20V 5A 5A Tc 20A 40 mJ 10V ±20V
    IRFR5410TRPBF IRFR5410TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin -13A No 3 HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 205mOhm Surface Mount -55°C~150°C TJ -100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 Other Transistors 1 TO-252AA DRAIN Single 66W 15 ns -4V 66W Tc 190 ns -13A 150°C SWITCHING 45 ns SILICON P-Channel 205m Ω @ 7.8A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 58ns 46 ns 20V -100V -100V -4 V 13A Tc 100V 52A 10V ±20V
    IRLR7843TRPBF IRLR7843TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free Tin 161A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.2606mm 6.22mm 3.3MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 25 ns 2.3V 140W Tc 59 ns 161A SWITCHING 34 ns SILICON N-Channel 3.3m Ω @ 15A, 10V 2.3V @ 250μA 4380pF @ 15V 50nC @ 4.5V 42ns 19 ns 20V 30V 2.3 V 161A Tc 620A 4.5V 10V ±20V
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    		 download 12 Weeks Tape & Reel (TR) 2000 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.065Ohm 55V SILICON P-Channel 65m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 31A 31A Tc 55V 110A 280 mJ 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 13W Tc 1.5A SWITCHING 800V SILICON N-Channel 4.5 Ω @ 400mA, 10V 3.5V @ 200μA 80pF @ 500V 4nC @ 10V Super Junction 1.5A Tc 800V 2.6A 1 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 2 (1 Year) 3 EAR99 6mm ROHS3 Compliant No 8 8-PowerVDFN No SVHC 950μm 5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 30 R-PDSO-N3 Other Transistors 1 DRAIN Single 3.1W 25 ns -1.9V 3.1W Ta 21A SWITCHING 0.0046Ohm 65 ns SILICON P-Channel 4.6m Ω @ 21A, 10V 2.4V @ 100μA 5250pF @ 15V 58nC @ 4.5V 47ns 70 ns 20V -30V -1.9 V 40A 21A Ta 40A Tc 30V 4.5V 10V ±20V
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 5 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30V 2.5W Ta 43W Tc 100A SWITCHING SILICON N-Channel 2.3m Ω @ 30A, 10V 2V @ 250μA 1600pF @ 15V 26nC @ 10V 26A 26A Ta 100A Tc 400A 14 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-261-3 not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G3 1 SINGLE WITH BUILT-IN DIODE DRAIN 6.5W Tc SWITCHING 0.9Ohm 700V SILICON N-Channel 900m Ω @ 1.1A, 10V 3.5V @ 60μA 211pF @ 400V 6.8nC @ 10V 6A Tc 700V 10V ±16V
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead No 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT 8 R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W 8 ns 80V 2.5W Ta 32W Tc 7A SWITCHING 0.034Ohm 11 ns SILICON N-Channel 34m Ω @ 12A, 10V 3.5V @ 12μA 756pF @ 40V 9.1nC @ 10V 3ns 2 ns 20V 23A 7A Ta 23A Tc 92A 20 mJ 6V 10V ±20V
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    		 download 12 Weeks Tape & Reel (TR) 1998 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 45W Tc SWITCHING 0.075Ohm 55V SILICON N-Channel 75m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 17A 17A Tc 55V 68A 71 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 8 4.9784mm ROHS3 Compliant Lead Free Tin 10.8A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 14MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) e3 DUAL GULL WING 260 30 FET General Purpose Power 1 Single 2.5W 8.6 ns 3V 2.5W Ta 10.8A SWITCHING 43 ns SILICON N-Channel 14m Ω @ 15A, 4.5V 3V @ 250μA 1801pF @ 10V 26nC @ 5V 21ns 10 ns 20V 30V 3 V 10.8A Ta 4.5V ±20V
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 3 (168 Hours) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE 41W Tc SWITCHING 0.36Ohm 600V SILICON N-Channel 360m Ω @ 2.7A, 10V 4V @ 140μA 555pF @ 400V 13nC @ 10V 9A Tc 600V 26A 27 mJ 10V ±20V
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-261-3 not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G3 1 SINGLE WITH BUILT-IN DIODE DRAIN 6W Tc SWITCHING 2Ohm 700V SILICON N-Channel 2 Ω @ 500mA, 10V 3.5V @ 30μA 130pF @ 400V 3.8nC @ 10V 3A Tc 700V 10V ±16V
    BSZ0902NSIATMA1 BSZ0902NSIATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead Tin No 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL 8 S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W 30V 2.5W Ta 48W Tc 21A SWITCHING 0.0037Ohm SILICON N-Channel 2.8m Ω @ 30A, 10V 2V @ 250μA 1500pF @ 15V 24nC @ 10V 5.4ns 20V 21A Ta 40A Tc 30 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 115W Tc SWITCHING 0.0048Ohm 60V SILICON N-Channel 4.8m Ω @ 90A, 10V 2.2V @ 58μA 8400pF @ 30V 50nC @ 4.5V 90A 90A Tc 60V 360A 68 mJ 4.5V 10V ±20V
    IRFZ34NSTRLPBF IRFZ34NSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 29A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 40mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 68W 7 ns 4V 3.8W Ta 68W Tc 86 ns 29A SWITCHING 31 ns SILICON N-Channel 40m Ω @ 16A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 49ns 40 ns 20V 55V 55V 4 V 29A Tc 10V ±20V
    IPB80N03S4L03ATMA1 IPB80N03S4L03ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Tape & Reel (TR) 2010 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30V 94W Tc 37 ns SILICON N-Channel 3.3m Ω @ 80A, 10V 2.2V @ 45μA 5100pF @ 25V 75nC @ 10V 6ns 80A 80A Tc 95 mJ 4.5V 10V ±16V
    IRF530NSTRLPBF IRF530NSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 17A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 5.084mm 9.65mm 90MOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 1 DRAIN Single 3.8W 9.2 ns 4V 3.8W Ta 70W Tc 140 ns 17A 175°C SWITCHING 35 ns SILICON N-Channel 90m Ω @ 9A, 10V 4V @ 250μA 920pF @ 25V 37nC @ 10V 22ns 25 ns 20V 100V 100V 4 V 17A Tc 60A 10V ±20V
    IPB70N04S406ATMA1 IPB70N04S406ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE Halogen Free 8 ns 40V 58W Tc 70A 0.0062Ohm 7 ns SILICON N-Channel 6.2m Ω @ 70A, 10V 4V @ 26μA 2550pF @ 25V 32nC @ 10V 10ns 9 ns 20V 70A Tc 280A 72 mJ 10V ±20V
    IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm 13.9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 80W 14 ns 80W Tc 51A SWITCHING 33 ns SILICON N-Channel 13.9m Ω @ 31A, 10V 4V @ 250μA 1420pF @ 25V 43nC @ 10V 68ns 41 ns 20V 55V 51A Tc 200A 86 mJ 10V ±20V
    IPD50R380CEBTMA1 IPD50R380CEBTMA1 Infineon Technologies $0.00
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    		 download Cut Tape (CT) 2014 CoolMOS™ no Discontinued 3 (168 Hours) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING 3 YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 73W Tc SWITCHING 0.38Ohm 500V SILICON N-Channel 380m Ω @ 3.2A, 13V 3.5V @ 260μA 584pF @ 100V 24.8nC @ 10V Super Junction 14.1A 9.9A Tc 500V 32.4A 173 mJ 13V ±20V
    IPB083N10N3GATMA1 IPB083N10N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 125W 18 ns 100V 125W Tc 80A SWITCHING 31 ns SILICON N-Channel 8.3m Ω @ 73A, 10V 3.5V @ 75μA 3980pF @ 50V 55nC @ 10V 42ns 8 ns 20V 80A Tc 6V 10V ±20V
    IPB042N03LGATMA1 IPB042N03LGATMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 79W 30V 79W Tc 70A SWITCHING 0.006Ohm SILICON N-Channel 4.2m Ω @ 30A, 10V 2.2V @ 250μA 3900pF @ 15V 38nC @ 10V 20V 70A Tc 400A 60 mJ 4.5V 10V ±20V
    IRFR18N15DTRPBF IRFR18N15DTRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 18A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 125mOhm Surface Mount -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 8.8 ns 5.5V 110W Tc 18A SWITCHING 15 ns SILICON N-Channel 125m Ω @ 11A, 10V 5.5V @ 250μA 900pF @ 25V 43nC @ 10V 25ns 9.8 ns 30V 150V 150V 5.5 V 18A Tc 72A 200 mJ 10V ±30V
    IRFR48ZTRPBF IRFR48ZTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 10.3886mm ROHS3 Compliant Lead Free 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.3876mm 6.73mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 TO-252AA DRAIN Single 91W 15 ns 91W Tc 42A SWITCHING 40 ns SILICON N-Channel 11m Ω @ 37A, 10V 4V @ 50μA 1720pF @ 25V 60nC @ 10V 61ns 35 ns 20V 55V 42A Tc 250A 74 mJ 10V ±20V
    IPD65R950CFDBTMA1 IPD65R950CFDBTMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Cut Tape (CT) 2012 CoolMOS™ no Last Time Buy 1 (Unlimited) 2 ROHS3 Compliant HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 36.7W Tc SWITCHING 0.95Ohm 650V SILICON N-Channel 950m Ω @ 1.5A, 10V 4.5V @ 200μA 380pF @ 100V 14.1nC @ 10V 3.9A 3.9A Tc 650V 11A 50 mJ 10V ±20V
    IRFR2405TRLPBF IRFR2405TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.016Ohm 55V SILICON N-Channel 16m Ω @ 34A, 10V 4V @ 250μA 2430pF @ 25V 110nC @ 10V 30A 56A Tc 55V 220A 130 mJ 10V ±20V
    IPD50N04S308ATMA1 IPD50N04S308ATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2007 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 68W 11 ns 40V 68W Tc 50A 0.0075Ohm 16 ns SILICON N-Channel 7.5m Ω @ 50A, 10V 4V @ 40μA 2350pF @ 25V 35nC @ 10V 7ns 6 ns 20V 50A Tc 200A 10V ±20V
    IRLR8743TRLPBF IRLR8743TRLPBF Infineon Technologies $0.00
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    Min: 1

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    		 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 TO-252AA DRAIN Single 135W 135W Tc 160A SWITCHING SILICON N-Channel 3.1m Ω @ 25A, 10V 2.35V @ 100μA 4880pF @ 15V 59nC @ 4.5V 35ns 17 ns 30V 160A Tc 640A 250 mJ 4.5V 10V ±20V