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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF9335PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 4.98mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.57mm | 3.99mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | Other Transistors | 1 | MS-012AA | Single | 2.5W | 9.7 ns | -1.8V | 2.5W Ta | 21 ns | -5.4A | SWITCHING | 0.059Ohm | 16 ns | SILICON | P-Channel | 59m Ω @ 5.4A, 10V | 2.4V @ 10μA | 386pF @ 25V | 14nC @ 10V | 19ns | 15 ns | 20V | -30V | -1.8 V | 5.4A Ta | 30V | 43A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF6713STRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 4.826mm | RoHS Compliant | Copper, Silver, Tin | No | 5 | DirectFET™ Isometric SQ | 506μm | 3.95mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W | 12 ns | 2.2W Ta 42W Tc | 22A | SWITCHING | 0.003Ohm | 9.2 ns | SILICON | N-Channel | 3m Ω @ 22A, 10V | 2.4V @ 50μA | 2880pF @ 13V | 32nC @ 4.5V | 13ns | 6 ns | 20V | 25V | 22A Ta 95A Tc | 34 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF9328PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | Other Transistors | 1 | Single | 2.5W | 19 ns | -1.8V | 2.5W Ta | 76 ns | -12A | SWITCHING | 80 ns | SILICON | P-Channel | 11.9m Ω @ 12A, 10V | 2.4V @ 25μA | 1680pF @ 25V | 52nC @ 10V | 57ns | 66 ns | 20V | -30V | -1.8 V | 12A Tc | 30V | 96A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF5803D2TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2001 | FETKY™ | Obsolete | 1 (Unlimited) | SMD/SMT | EAR99 | 4.9784mm | RoHS Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Other Transistors | 1 | Single | 2W | 43 ns | 3V | 2W Ta | 3.4A | 88 ns | P-Channel | 112m Ω @ 3.4A, 10V | 3V @ 250μA | 1110pF @ 25V | 37nC @ 10V | 550ns | 50 ns | 20V | -40V | 40V | Schottky Diode (Isolated) | 3 V | 3.4A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRL1004STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.668mm | RoHS Compliant | 110A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 150W | 16 ns | 3.8W Ta 200W Tc | 130A | SWITCHING | 0.0065Ohm | 25 ns | SILICON | N-Channel | 6.5m Ω @ 78A, 10V | 1V @ 250μA | 5330pF @ 25V | 100nC @ 4.5V | 210ns | 14 ns | 16V | 40V | 130A Tc | 520A | 700 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IPW60R330P6FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | Obsolete | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 12 ns | 600V | 297mOhm | PG-TO247-3 | 93W Tc | 12A | 33 ns | N-Channel | 330mOhm @ 4.5A, 10V | 4.5V @ 370μA | 1010pF @ 100V | 22nC @ 10V | 7ns | 20V | 12A Tc | 600V | 1.01nF | 10V | ±20V | 330 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R380P6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | Obsolete | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 12 ns | 600V | 342mOhm | PG-TO220-3 | 83W Tc | 10.6A | 33 ns | N-Channel | 380mOhm @ 3.8A, 10V | 4.5V @ 320μA | 877pF @ 100V | 19nC @ 10V | 6ns | 7 ns | 20V | 10.6A Tc | 600V | 877pF | 10V | ±20V | 380 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R1K0CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2015 | CoolMOS™ CE | yes | Obsolete | 3 (168 Hours) | 2 | EAR99 | RoHS Compliant | Lead Free | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 3.949996g | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 10 ns | 37W Tc | 4.3A | SWITCHING | 1Ohm | 600V | 60 ns | SILICON | N-Channel | 1 Ω @ 1.5A, 10V | 3.5V @ 130μA | 280pF @ 100V | 13nC @ 10V | 8ns | 13 ns | 20V | 4.3A Tc | 600V | 46 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD60R450E6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | CoolMOS™ E6 | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 11 ns | 600V | 74W Tc | 9.2A | SWITCHING | 0.45Ohm | 70 ns | SILICON | N-Channel | 450m Ω @ 3.4A, 10V | 3.5V @ 280μA | 620pF @ 100V | 28nC @ 10V | 9ns | 10 ns | 20V | 600V | 9.2A Tc | 26A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R950CE | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-220-3 Full Pack | compliant | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 25.7W Tc | SWITCHING | 0.95Ohm | 500V | SILICON | N-Channel | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 231pF @ 100V | 10.5nC @ 10V | Super Junction | 4.3A Tc | 500V | 12.8A | 68 mJ | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R500CE | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-220-3 Full Pack | compliant | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 28W Tc | SWITCHING | 0.5Ohm | 500V | SILICON | N-Channel | 500m Ω @ 2.3A, 13V | 3.5V @ 200μA | 433pF @ 100V | 18.7nC @ 10V | Super Junction | 7.6A Tc | 500V | 24A | 129 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R950CEBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Cut Tape (CT) | 2013 | CoolMOS™ | no | Discontinued | 3 (168 Hours) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 34W Tc | N-Channel | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 231pF @ 100V | 10.5nC @ 10V | Super Junction | 4.3A Tc | 500V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM831TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 3.2766mm | RoHS Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 990.6μm | 3.3mm | 12.6MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N5 | FET General Purpose Power | 1 | DRAIN | Single | 2.5W | 6.9 ns | 1.8V | 2.5W Ta 27W Tc | 14A | SWITCHING | 6.2 ns | SILICON | N-Channel | 7.8m Ω @ 12A, 10V | 2.35V @ 25μA | 1050pF @ 25V | 16nC @ 10V | 12ns | 4.7 ns | 20V | 30V | 1.8 V | 40A | 14A Ta 40A Tc | 96A | 50 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPA50R380CE | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-220-3 Full Pack | compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 29.2W Tc | SWITCHING | 0.38Ohm | 500V | SILICON | N-Channel | 380m Ω @ 3.2A, 13V | 3.5V @ 260μA | 584pF @ 100V | 24.8nC @ 10V | Super Junction | 9.9A Tc | 500V | 30A | 210 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7440PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2007 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 208W | 24 ns | 3V | 208W Tc | 24 ns | 120A | SWITCHING | 0.0025Ohm | 115 ns | SILICON | N-Channel | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 4730pF @ 25V | 135nC @ 10V | 68ns | 68 ns | 20V | 40V | 3 V | 208A | 120A Tc | 772A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AUIRFBA1405 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2012 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 3 | TO-273AA | Through Hole | -40°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 1 | Single | 330W | 13 ns | 330W Tc | 95A | 130 ns | N-Channel | 5m Ω @ 101A, 10V | 4V @ 250μA | 5480pF @ 25V | 260nC @ 10V | 190ns | 110 ns | 20V | 55V | 95A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLR024Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | FET General Purpose Power | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 35W Tc | SWITCHING | 0.058Ohm | 55V | SILICON | N-Channel | 58m Ω @ 9.6A, 10V | 3V @ 250μA | 380pF @ 25V | 9.9nC @ 5V | 16A | 16A Tc | 55V | 64A | 25 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFU3607 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2015 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | No | 3 | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 16 ns | 140W Tc | 80A | SWITCHING | 0.009Ohm | 75V | 43 ns | SILICON | N-Channel | 9m Ω @ 46A, 10V | 4V @ 100μA | 3070pF @ 50V | 84nC @ 10V | 110ns | 96 ns | 20V | 56A | 56A Tc | 75V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD65R250C6XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Cut Tape (CT) | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Lead Free | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 13 ns | 650V | 208.3W Tc | 16.1A | SWITCHING | 0.25Ohm | 100 ns | SILICON | N-Channel | 250m Ω @ 4.4A, 10V | 3.5V @ 400μA | 950pF @ 100V | 44nC @ 10V | 11ns | 12 ns | 20V | 700V | 16.1A Tc | 46A | 290 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPU60R950C6BKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2012 | CoolMOS™ | no | Discontinued | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Contains Lead | 3 | TO-251-3 Short Leads, IPak, TO-251AA | 6.22mm | 2.41mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | Halogen Free | Single | 37W | 10 ns | 600V | 37W Tc | 4.4A | SWITCHING | 0.95Ohm | 60 ns | SILICON | N-Channel | 950m Ω @ 1.5A, 10V | 3.5V @ 130μA | 280pF @ 100V | 1.5nC @ 10V | 8ns | 13 ns | 20V | 650V | 4.4A Tc | 46 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFH8316TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Single | 3.6W | 19 ns | 3.6W Ta 59W Tc | 27A | 20 ns | N-Channel | 2.95m Ω @ 20A, 10V | 2.2V @ 50μA | 3610pF @ 10V | 59nC @ 10V | 67ns | 24 ns | 20V | 30V | 50A | 27A Ta 50A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R045C7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ C7 | yes | Discontinued | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 227W | 20 ns | 650V | 227W Tc | 46A | SWITCHING | 0.045Ohm | 82 ns | SILICON | N-Channel | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 4340pF @ 400V | 93nC @ 10V | 14ns | 7 ns | 20V | 46A Tc | 249 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR7446PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2004 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 9.8 ns | 3V | 98W Tc | 56A | SWITCHING | 32 ns | SILICON | N-Channel | 3.9m Ω @ 56A, 10V | 3.9V @ 100μA | 3150pF @ 25V | 130nC @ 10V | 13ns | 20 ns | 20V | 40V | 56A Tc | 520A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFHM8330TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | S-PDSO-F5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.7W | 9.2 ns | 1.8V | 2.7W Ta 33W Tc | 16A | SWITCHING | 0.0066Ohm | 10 ns | SILICON | N-Channel | 6.6m Ω @ 20A, 10V | 2.35V @ 25μA | 1450pF @ 25V | 20nC @ 10V | 15ns | 5.7 ns | 20V | 30V | 55A | 16A Ta | 42 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFHM8337TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 9.4mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | S-PDSO-F5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 9 ns | 1.8V | 2.8W Ta 25W Tc | 12A | SWITCHING | 9.9 ns | SILICON | N-Channel | 12.4m Ω @ 12A, 10V | 2.35V @ 25μA | 755pF @ 15V | 8.1nC @ 4.5V | 11ns | 5.6 ns | 20V | 30V | 35A | 12A Ta | 94A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFHM8342TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 13mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | S-PDSO-F5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 8.1 ns | 1.8V | 2.6W Ta 20W Tc | 10A | SWITCHING | 30V | 7.6 ns | SILICON | N-Channel | 16m Ω @ 17A, 10V | 2.35V @ 25μA | 560pF @ 25V | 7.5nC @ 4.5V | 30ns | 5.6 ns | 20V | 20A | 10A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA65R099C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 35W | 10.6 ns | 650V | 35W Tc | 38A | SWITCHING | 0.099Ohm | 77 ns | SILICON | N-Channel | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 2780pF @ 100V | 127nC @ 10V | 9ns | 6 ns | 20V | 38A Tc | 845 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPP65R099C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 10.6 ns | 650V | 278W Tc | 38A | SWITCHING | 0.099Ohm | 77 ns | SILICON | N-Channel | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 2780pF @ 100V | 15nC @ 10V | 9ns | 6 ns | 20V | 38A Tc | 115A | 845 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF6718L2TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 7 | EAR99 | 9.144mm | ROHS3 Compliant | Lead Free | No | 13 | ULTRA-LOW RESISTANCE | DirectFET™ Isometric L6 | 508μm | 7.1mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N7 | FET General Purpose Power | 1 | DRAIN | Single | 4.3W | 67 ns | 4.3W Ta 83W Tc | 61A | SWITCHING | 0.0007Ohm | 47 ns | SILICON | N-Channel | 0.7m Ω @ 61A, 10V | 2.35V @ 150μA | 6500pF @ 13V | 96nC @ 4.5V | 140ns | 53 ns | 20V | 25V | 270A | 61A Ta 270A Tc | 490A | 530 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AUIRFR8403 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2013 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | IRFR8403 | 1 | FET General Purpose Power | Single | 99W | 10 ns | 3V | 99W Tc | 100A | 31 ns | N-Channel | 3.1m Ω @ 76A, 10V | 3.9V @ 100μA | 3171pF @ 25V | 99nC @ 10V | 32ns | 23 ns | 20V | 40V | 3 V | 100A Tc | 10V | ±20V |