Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IRFH4210TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2015 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 6mm | RoHS Compliant | Lead Free | No | 5 | 8-PowerTDFN | No SVHC | 900μm | 5mm | 1.1MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 3.6W | 20 ns | 1.6V | 3.6W Ta 104W Tc | 45A | 24 ns | N-Channel | 1.35m Ω @ 50A, 10V | 2.1V @ 100μA | 4812pF @ 13V | 74nC @ 10V | 44ns | 15 ns | 20V | 45A Ta | 25V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
AUIRFR8405 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tube | 2013 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | IRFR8405 | 1 | FET General Purpose Power | Single | 163W | 12 ns | 163W Tc | 100A | 51 ns | N-Channel | 1.98m Ω @ 90A, 10V | 3.9V @ 100μA | 5171pF @ 25V | 155nC @ 10V | 80ns | 51 ns | 20V | 40V | 3 V | 100A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRFHM4226TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 3.3mm | RoHS Compliant | Lead Free | No | 5 | 8-TQFN Exposed Pad | No SVHC | 900μm | 3.3mm | 2.2MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FET General Purpose Power | 1 | DRAIN | Single | 2.7W | 11 ns | 1.6V | 2.7W Ta 39W Tc | 28A | SWITCHING | 14 ns | SILICON | N-Channel | 2.2m Ω @ 30A, 10V | 2.1V @ 50μA | 2000pF @ 13V | 32nC @ 10V | 35ns | 8.1 ns | 20V | 40A | 28A Ta | 25V | 420A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
IRFHM4234TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | FASTIRFET™, HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 3.3mm | RoHS Compliant | Lead Free | Copper, Silver, Tin | No | 5 | 8-TQFN Exposed Pad | No SVHC | 900μm | 3.3mm | 4.4MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FET General Purpose Power | 1 | DRAIN | Single | 2.8W | 7.8 ns | 1.6V | 2.8W Ta 28W Tc | 20A | SWITCHING | 8 ns | SILICON | N-Channel | 4.4m Ω @ 30A, 10V | 2.1V @ 25μA | 1011pF @ 13V | 17nC @ 10V | 30ns | 5.3 ns | 20V | 63A | 20A Ta | 25V | 270A | 39 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
IPU50R950CEBKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2015 | CoolMOS™ CE | no | Discontinued | 3 (168 Hours) | EAR99 | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 34W Tc | N-Channel | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 231pF @ 100V | 10.5nC @ 10V | 4.3A Tc | 500V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS7540PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2007 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 160W | 12 ns | 160W Tc | 110A | SWITCHING | 58 ns | SILICON | N-Channel | 5.1m Ω @ 65A, 10V | 3.7V @ 100μA | 4555pF @ 25V | 130nC @ 10V | 76ns | 56 ns | 20V | 60V | 110A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRL6283MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | No | 8 | DirectFET™ Isometric MD | No SVHC | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 2.1W | 23 ns | 800mV | 2.1W Ta 63W Tc | 211A | 116 ns | N-Channel | 0.75m Ω @ 50A, 10V | 1.1V @ 100μA | 8292pF @ 10V | 158nC @ 4.5V | 160ns | 192 ns | 12V | 38A Ta 211A Tc | 20V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
IRFS7434PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2009 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 294W | 24 ns | 3V | 294W Tc | 195A | SWITCHING | 40V | 115 ns | SILICON | N-Channel | 1.6m Ω @ 100A, 10V | 3.9V @ 250μA | 10820pF @ 25V | 324nC @ 10V | 68ns | 68 ns | 20V | 195A Tc | 40V | 780A | 6V 10V | ±20V | ||||||||||||||||||||||||||
IRFR7740PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount, Through Hole | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | 2.39mm | 6.22mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 140W | 10 ns | 3.7V | 140W Tc | 87A | 55 ns | N-Channel | 7.2m Ω @ 52A, 10V | 3.7V @ 100μA | 4430pF @ 25V | 126nC @ 10V | 36ns | 30 ns | 20V | 87A Tc | 75V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFS7730PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tube | 2013 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 375W | 21 ns | 375W Tc | 195A | 180 ns | N-Channel | 2.6m Ω @ 100A, 10V | 3.7V @ 250μA | 13660pF @ 25V | 407nC @ 10V | 120ns | 115 ns | 20V | 195A Tc | 75V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRFS7734PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tube | 2013 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 20 ns | 290W Tc | 183A | 124 ns | N-Channel | 3.5m Ω @ 100A, 10V | 3.7V @ 250μA | 10150pF @ 25V | 270nC @ 10V | 123ns | 100 ns | 20V | 183A Tc | 75V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRFS7787PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Tube | 2013 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 125W | 11 ns | 125W Tc | 76A | 51 ns | N-Channel | 8.4m Ω @ 46A, 10V | 3.7V @ 100μA | 4020pF @ 25V | 109nC @ 10V | 48ns | 39 ns | 20V | 76A Tc | 75V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRFS7734-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2005 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | 10.54mm | ROHS3 Compliant | Lead Free | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 4.83mm | 9.65mm | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 294W | 17 ns | 294W Tc | 197A | 123 ns | N-Channel | 3.05m Ω @ 100A, 10V | 3.7V @ 150μA | 10130pF @ 25V | 270nC @ 10V | 85ns | 75 ns | 20V | 197A Tc | 75V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
AUIRFS3004 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | AUIRFS3004 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 380W | 23 ns | 380W Tc | 195A | SWITCHING | 90 ns | SILICON | N-Channel | 1.75m Ω @ 195A, 10V | 4V @ 250μA | 9200pF @ 25V | 240nC @ 10V | 220ns | 130 ns | 20V | 40V | 195A Tc | 10V | ±20V | ||||||||||||||||||||||||||||
AUIRFP1405 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-247-3 | No SVHC | 20.7mm | 5.31mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 310W | 12 ns | 310W Tc | 95A | SWITCHING | 140 ns | SILICON | N-Channel | 5.3m Ω @ 95A, 10V | 4V @ 250μA | 5600pF @ 25V | 180nC @ 10V | 160ns | 150 ns | 20V | 55V | 95A Tc | 640A | 10V | ±20V | |||||||||||||||||||||||||||||||||
AUIRLS3036 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 380W Tc | SWITCHING | 0.0024Ohm | 60V | SILICON | N-Channel | 2.4m Ω @ 165A, 10V | 2.5V @ 250μA | 11210pF @ 50V | 140nC @ 4.5V | 195A | 195A Tc | 60V | 1100A | 290 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
AUIRFL014NTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | 4 | EAR99 | 6.7mm | ROHS3 Compliant | No | 4 | AVALANCHE RATED | TO-261-4, TO-261AA | No SVHC | 1.8mm | 3.7mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1W | 6.6 ns | 2V | 1W Ta | 1.5A | SWITCHING | 12 ns | SILICON | N-Channel | 160m Ω @ 1.9A, 10V | 4V @ 250μA | 190pF @ 25V | 11nC @ 10V | 7.1ns | 3.3 ns | 20V | 55V | 2.7A | 1.5A Ta | 10V | ±20V | |||||||||||||||||||||||||||||
IRFH7107TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 5.85mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 1.17mm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 3.6W | 9.1 ns | 3.6W Ta 104W Tc | 14A | 20 ns | N-Channel | 8.5m Ω @ 45A, 10V | 4V @ 100μA | 3110pF @ 25V | 72nC @ 10V | 12ns | 6.5 ns | 20V | 75A | 14A Ta 75A Tc | 75V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPB080N03LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 47W | 4.6 ns | 30V | 47W Tc | 50A | SWITCHING | 18 ns | SILICON | N-Channel | 8m Ω @ 30A, 10V | 2.2V @ 250μA | 1900pF @ 15V | 18nC @ 10V | 3.6ns | 2.8 ns | 20V | 48A | 50A Tc | 50 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
IPB60R299CPATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Contains Lead | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 4 | 1 | Halogen Free | 96W | 10 ns | 600V | 96W Tc | 11A | 40 ns | N-Channel | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 1100pF @ 100V | 29nC @ 10V | 5ns | 20V | 11A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPB60R385CPATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2006 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 4 | Halogen Free | Single | 83W | 10 ns | 3V | 83W Tc | 9A | 40 ns | N-Channel | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 790pF @ 100V | 22nC @ 10V | 5ns | 5 ns | 20V | 650V | 3 V | 9A Tc | 600V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
BSR302NL6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.21.00.95 | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 30V | 500mW Ta | 3.7A | SILICON | N-Channel | 23m Ω @ 3.7A, 10V | 2V @ 30μA | 750pF @ 15V | 6.6nC @ 5V | 3.2ns | 20V | 3.7A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IPB65R280C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | Contains Lead | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 104W | 13 ns | 650V | 104W Tc | 13.8A | SWITCHING | 0.28Ohm | 105 ns | SILICON | N-Channel | 280m Ω @ 4.4A, 10V | 3.5V @ 440μA | 950pF @ 100V | 45nC @ 10V | 11ns | 12 ns | 20V | 13.8A Tc | 39A | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||
IRFS4510PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Surface Mount | Tube | 2007 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 140W | 13 ns | 3V | 140W Tc | 61A | 28 ns | N-Channel | 13.9m Ω @ 37A, 10V | 4V @ 100μA | 3180pF @ 50V | 87nC @ 10V | 32ns | 20V | 3 V | 61A Tc | 100V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
AUIRFR3504TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | 2014 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 140W Tc | SWITCHING | 0.0092Ohm | 40V | SILICON | N-Channel | 9.2m Ω @ 30A, 10V | 4V @ 250μA | 2150pF @ 25V | 71nC @ 10V | 87A | 56A Tc | 40V | 350A | 480 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
AUIRF1018ES | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead, Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 110W | 13 ns | 110W Tc | 79A | SWITCHING | 0.0084Ohm | 55 ns | SILICON | N-Channel | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 2290pF @ 50V | 69nC @ 10V | 35ns | 46 ns | 20V | 60V | 79A Tc | 88 mJ | 10V | ±20V | |||||||||||||||||||||||||||
AUIRF3504 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.66mm | RoHS Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 16.51mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 143W | 9.9 ns | 2V | 143W Tc | 87A | SWITCHING | 0.0092Ohm | 24 ns | SILICON | N-Channel | 9.2m Ω @ 52A, 10V | 4V @ 100μA | 2150pF @ 25V | 54nC @ 10V | 61ns | 29 ns | 20V | 40V | 2 V | 87A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||
AUIRF9Z34N | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | Through Hole | 2007 | Automotive, AEC-Q101, HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.66mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 16.51mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Other Transistors | 1 | TO-220AB | DRAIN | Single | 68W | 13 ns | -2V | 68W Tc | 19A | SWITCHING | 30 ns | SILICON | P-Channel | 100m Ω @ 10A, 10V | 4V @ 250μA | 620pF @ 25V | 35nC @ 10V | 55ns | 41 ns | 20V | -55V | 19A Tc | 55V | 68A | 10V | ±20V | |||||||||||||||||||||||||||||||
AUIRF3808S | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 16 ns | 2V | 200W Tc | 106A | SWITCHING | 0.007Ohm | 68 ns | SILICON | N-Channel | 7m Ω @ 82A, 10V | 4V @ 250μA | 5310pF @ 25V | 220nC @ 10V | 140ns | 120 ns | 20V | 75V | 106A Tc | 550A | 10V | ±20V | ||||||||||||||||||||||||||
AUIRFP2907 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 15.87mm | RoHS Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-247-3 | No SVHC | 20.7mm | 5.31mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 470W | 23 ns | 470W Tc | 90A | SWITCHING | 0.0045Ohm | 130 ns | SILICON | N-Channel | 4.5m Ω @ 125A, 10V | 4V @ 250μA | 13000pF @ 25V | 620nC @ 10V | 190ns | 130 ns | 20V | 75V | 90A Tc | 840A | 10V | ±20V |
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