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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRF9520NSPBF IRF9520NSPBF Infineon Technologies $0.00
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    		 download 9 Weeks Surface Mount Tube 1998 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 10.668mm RoHS Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 480mOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 Other Transistors 1 DRAIN Single 3.8W 14 ns -4V 3.8W Ta 48W Tc 150 ns -6.8A SWITCHING 28 ns SILICON P-Channel 480m Ω @ 4A, 10V 4V @ 250μA 350pF @ 25V 27nC @ 10V 47ns 31 ns 20V -100V -4 V 6.8A Tc 100V 27A 10V ±20V
    IRF8714PBF IRF8714PBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) 8 SMD/SMT EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 8.7MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 FET General Purpose Power 1 Single 2.5W 10 ns 1.8V 2.5W Ta 21 ns 14A SWITCHING 11 ns SILICON N-Channel 8.7m Ω @ 14A, 10V 2.35V @ 25μA 1020pF @ 15V 12nC @ 4.5V 9.9ns 5 ns 20V 30V 30V 1.8 V 14A Ta 65 mJ 4.5V 10V ±20V
    IRFS4310PBF IRFS4310PBF Infineon Technologies $0.00
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    		 download Tube 2006 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.007Ohm 100V SILICON N-Channel 7m Ω @ 75A, 10V 4V @ 250μA 7670pF @ 50V 250nC @ 10V 75A 130A Tc 100V 550A 980 mJ 10V ±20V
    IRF2903ZSPBF IRF2903ZSPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 231W 24 ns 4V 231W Tc 51 ns 260A SWITCHING 0.0024Ohm 48 ns SILICON N-Channel 2.4m Ω @ 75A, 10V 4V @ 150μA 6320pF @ 25V 240nC @ 10V 100ns 37 ns 20V 30V 4 V 75A 75A Tc 820 mJ 10V ±20V
    IRF9540NSPBF IRF9540NSPBF Infineon Technologies $0.00
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    		 download Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W Ta 110W Tc SWITCHING 0.117Ohm 100V SILICON P-Channel 117m Ω @ 14A, 10V 4V @ 250μA 1450pF @ 25V 110nC @ 10V 23A 23A Tc 100V 92A 84 mJ 10V ±20V
    IPP80N04S204AKSA1 IPP80N04S204AKSA1 Infineon Technologies $0.00
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    		 download 17 Weeks Through Hole Tube 2006 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead No 3 AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 26 ns 40V 300W Tc 80A 56 ns SILICON N-Channel 3.7m Ω @ 80A, 10V 4V @ 250μA 5300pF @ 25V 170nC @ 10V 45ns 32 ns 20V 80A Tc 10V ±20V
    IPS075N03LGAKMA1 IPS075N03LGAKMA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2008 OptiMOS™ no Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 47W 47W Tc 50A SWITCHING SILICON N-Channel 7.5m Ω @ 30A, 10V 2.2V @ 250μA 1900pF @ 15V 18nC @ 10V 20V 50A Tc 30V 50 mJ 4.5V 10V ±20V
    SPP08P06PHXKSA1 SPP08P06PHXKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1999 SIPMOS® yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 42W 16 ns -60V 42W Tc 8.8A 48 ns SILICON P-Channel 300m Ω @ 6.2A, 10V 4V @ 250μA 420pF @ 25V 15nC @ 10V 46ns 14 ns 20V 8.8A Tc 60V 70 mJ 10V ±20V
    IRF8734PBF IRF8734PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 4mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2.5W 13 ns 2.5W Ta 30 ns 21A SWITCHING 0.0035Ohm 15 ns SILICON N-Channel 3.5m Ω @ 21A, 10V 2.35V @ 50μA 3175pF @ 15V 30nC @ 4.5V 16ns 8 ns 20V 30V 1.8 V 21A Ta 4.5V 10V ±20V
    IRFS4115PBF IRFS4115PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 12.1MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 375W 18 ns 5V 375W Tc 99A SWITCHING 41 ns SILICON N-Channel 12.1m Ω @ 62A, 10V 5V @ 250μA 5270pF @ 50V 120nC @ 10V 73ns 39 ns 20V 150V 150V 5 V 195A Tc 10V ±20V
    IPW60R250CP IPW60R250CP Infineon Technologies $0.00
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    		 download Tube 2011 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN NOT SPECIFIED NOT SPECIFIED 3 NO FET General Purpose Power Not Qualified 1 Single 104W 104W Tc 12A SWITCHING 0.25Ohm SILICON N-Channel 250m Ω @ 7.8A, 10V 3.5V @ 440μA 1200pF @ 100V 35nC @ 10V 20V 600V 3 V 12A Tc 650V 40A 10V ±20V
    IRFS4615PBF IRFS4615PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 144W 15 ns 5V 144W Tc 33A SWITCHING 0.042Ohm 25 ns SILICON N-Channel 42m Ω @ 21A, 10V 5V @ 100μA 1750pF @ 50V 40nC @ 10V 35ns 20 ns 20V 150V 150V 5 V 33A Tc 10V ±20V
    IRLR3636PBF IRLR3636PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 6.8MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 143W 45 ns 2.5V 143W Tc 99A 43 ns N-Channel 6.8m Ω @ 50A, 10V 2.5V @ 100μA 3779pF @ 50V 49nC @ 4.5V 216ns 96 ns 16V 60V 50A Tc 4.5V 10V ±16V
    IRFS4127PBF IRFS4127PBF Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 22MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 375W 17 ns 5V 375W Tc 72A SWITCHING 56 ns SILICON N-Channel 22m Ω @ 44A, 10V 5V @ 250μA 5380pF @ 50V 150nC @ 10V 18ns 22 ns 20V 200V 200V 5 V 72A Tc 250 mJ 10V ±20V
    IRLS4030PBF IRLS4030PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.572mm 9.65mm 4.3MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 Single 370W 74 ns 2.5V 370W Tc 190A SWITCHING 110 ns SILICON N-Channel 4.3m Ω @ 110A, 10V 2.5V @ 250μA 11360pF @ 50V 130nC @ 4.5V 330ns 170 ns 16V 100V 100V 2.5 V 180A Tc 4.5V 10V ±16V
    IRLS4030-7PPBF IRLS4030-7PPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 10.3378mm ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.3434mm 6.85mm 3.9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 370W 53 ns 2.5V 370W Tc 190A 110 ns N-Channel 3.9m Ω @ 110A, 10V 2.5V @ 250μA 11490pF @ 50V 140nC @ 4.5V 160ns 87 ns 16V 100V 100V 2.5 V 190A Tc 4.5V 10V ±16V
    IRF8252TRPBF IRF8252TRPBF Infineon Technologies $0.00
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    		 download 20 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Obsolete 1 (Unlimited) EAR99 4.9784mm RoHS Compliant Lead Free Tin No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm 2.7MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 Single 2.5W 23 ns 2.5W Ta 25A 19 ns N-Channel 2.7m Ω @ 25A, 10V 2.35V @ 100μA 5305pF @ 13V 53nC @ 4.5V 32ns 12 ns 20V 25V 25A Ta 4.5V 10V ±20V
    IRFS4010PBF IRFS4010PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 4.7MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 375W 21 ns 4V 72 ns 375W Tc 180A SWITCHING 100 ns SILICON N-Channel 4.7m Ω @ 106A, 10V 4V @ 250μA 9575pF @ 50V 215nC @ 10V 86ns 77 ns 20V 100V 100V 4 V 180A Tc 720A 10V ±20V
    IRFS3107-7PPBF IRFS3107-7PPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 6 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.572mm 9.65mm 2.6MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 DRAIN Single 370W 17 ns 4V 52 ns 370W Tc 260A SWITCHING 100 ns SILICON N-Channel 2.6m Ω @ 160A, 10V 4V @ 250μA 9200pF @ 50V 240nC @ 10V 80ns 64 ns 20V 75V 75V 4 V 240A 240A Tc 320 mJ 10V ±20V
    IRF1407STRRPBF IRF1407STRRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W 11 ns 3.8W Ta 200W Tc 100A SWITCHING 0.0078Ohm 150 ns SILICON N-Channel 7.8m Ω @ 78A, 10V 4V @ 250μA 5600pF @ 25V 250nC @ 10V 150ns 140 ns 20V 75V 75A 100A Tc 520A 10V ±20V
    IRFR3704ZTRLPBF IRFR3704ZTRLPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.7056mm RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.38mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 48W 8.4 ns 48W Tc 60A SWITCHING 0.0084Ohm 4.9 ns SILICON N-Channel 8.4m Ω @ 15A, 10V 2.55V @ 250μA 1190pF @ 10V 14nC @ 4.5V 8.9ns 12 ns 20V 20V 60A Tc 240A 4.5V 10V ±20V
    IRF1018ESLPBF IRF1018ESLPBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm RoHS Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 40 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W 13 ns 4V 110W Tc 39 ns 79A SWITCHING 0.0084Ohm 55 ns SILICON N-Channel 8.4m Ω @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 79A Tc 88 mJ 10V ±20V
    IRFU2607ZPBF IRFU2607ZPBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) Through Hole 6.7056mm RoHS Compliant Lead Free 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 110W 14 ns 2V 30 ns 110W Tc 27 ns 45A 39 ns N-Channel 22m Ω @ 30A, 10V 4V @ 50μA 1440pF @ 25V 51nC @ 10V 59ns 28 ns 20V 75V 75V 42A Tc 10V ±20V
    IRFSL4227PBF IRFSL4227PBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2008 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.67mm RoHS Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.83mm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 40 FET General Purpose Power 1 DRAIN Single 330W 33 ns 5V 330W Tc 62A SWITCHING 0.026Ohm 21 ns SILICON N-Channel 26m Ω @ 46A, 10V 5V @ 250μA 4600pF @ 25V 98nC @ 10V 20ns 31 ns 30V 200V 5 V 62A Tc 260A 140 mJ 10V ±30V
    IRFSL4310PBF IRFSL4310PBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2006 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.67mm RoHS Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 330W 26 ns 4V 300W Tc 140A SWITCHING 0.007Ohm 68 ns SILICON N-Channel 7m Ω @ 75A, 10V 4V @ 250μA 7670pF @ 50V 250nC @ 10V 110ns 78 ns 20V 100V 4 V 75A 130A Tc 550A 980 mJ 10V ±20V
    IRFR3806PBF IRFR3806PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2002 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free Tin No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA 71W 6.3 ns 4V 71W Tc 33 ns 43A SWITCHING 49 ns SILICON N-Channel 15.8m Ω @ 25A, 10V 4V @ 50μA 1150pF @ 50V 30nC @ 10V 40ns 47 ns 20V 60V 43A Tc 10V ±20V
    IRFS4310ZPBF IRFS4310ZPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tube 2006 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 6MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 250W 20 ns 4V 250W Tc 40 ns 127A SWITCHING 55 ns SILICON N-Channel 6m Ω @ 75A, 10V 4V @ 150μA 6860pF @ 50V 170nC @ 10V 60ns 57 ns 20V 100V 100V 4 V 120A 120A Tc 560A 10V ±20V
    SPD06N60C3BTMA1 SPD06N60C3BTMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant HIGH VOLTAGE TO-252-3, DPak (2 Leads + Tab), SC-63 compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 74W Tc SWITCHING 0.75Ohm 600V SILICON N-Channel 750m Ω @ 3.9A, 10V 3.9V @ 260μA 620pF @ 25V 31nC @ 10V 6.2A 6.2A Tc 650V 18.6A 200 mJ 10V ±20V
    SPD04N80C3BTMA1 SPD04N80C3BTMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2005 CoolMOS™ yes Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No AVALANCHE RATED, HIGH VOLTAGE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 3 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 63W 25 ns 800V 63W Tc 4A SWITCHING 72 ns SILICON N-Channel 1.3 Ω @ 2.5A, 10V 3.9V @ 240μA 570pF @ 25V 26nC @ 10V 15ns 12 ns 20V 4A 4A Tc 10V ±20V
    IRFS3206PBF IRFS3206PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free Tin 210A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) Single 300mW 19 ns 4V 300W Tc 50 ns 210A 55 ns N-Channel 3m Ω @ 75A, 10V 4V @ 150μA 6540pF @ 50V 170nC @ 10V 82ns 83 ns 20V 60V 120A Tc 10V ±20V