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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB65R045C7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ C7 | yes | Discontinued | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 227W | 20 ns | 650V | 227W Tc | 46A | SWITCHING | 0.045Ohm | 82 ns | SILICON | N-Channel | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 4340pF @ 400V | 93nC @ 10V | 14ns | 7 ns | 20V | 46A Tc | 249 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7446PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2004 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 9.8 ns | 3V | 98W Tc | 56A | SWITCHING | 32 ns | SILICON | N-Channel | 3.9m Ω @ 56A, 10V | 3.9V @ 100μA | 3150pF @ 25V | 130nC @ 10V | 13ns | 20 ns | 20V | 40V | 56A Tc | 520A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8330TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | S-PDSO-F5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.7W | 9.2 ns | 1.8V | 2.7W Ta 33W Tc | 16A | SWITCHING | 0.0066Ohm | 10 ns | SILICON | N-Channel | 6.6m Ω @ 20A, 10V | 2.35V @ 25μA | 1450pF @ 25V | 20nC @ 10V | 15ns | 5.7 ns | 20V | 30V | 55A | 16A Ta | 42 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8337TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 9.4mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | S-PDSO-F5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 9 ns | 1.8V | 2.8W Ta 25W Tc | 12A | SWITCHING | 9.9 ns | SILICON | N-Channel | 12.4m Ω @ 12A, 10V | 2.35V @ 25μA | 755pF @ 15V | 8.1nC @ 4.5V | 11ns | 5.6 ns | 20V | 30V | 35A | 12A Ta | 94A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8342TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 13mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | S-PDSO-F5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 8.1 ns | 1.8V | 2.6W Ta 20W Tc | 10A | SWITCHING | 30V | 7.6 ns | SILICON | N-Channel | 16m Ω @ 17A, 10V | 2.35V @ 25μA | 560pF @ 25V | 7.5nC @ 4.5V | 30ns | 5.6 ns | 20V | 20A | 10A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R099C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 35W | 10.6 ns | 650V | 35W Tc | 38A | SWITCHING | 0.099Ohm | 77 ns | SILICON | N-Channel | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 2780pF @ 100V | 127nC @ 10V | 9ns | 6 ns | 20V | 38A Tc | 845 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R099C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 10.6 ns | 650V | 278W Tc | 38A | SWITCHING | 0.099Ohm | 77 ns | SILICON | N-Channel | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 2780pF @ 100V | 15nC @ 10V | 9ns | 6 ns | 20V | 38A Tc | 115A | 845 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6718L2TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 7 | EAR99 | 9.144mm | ROHS3 Compliant | Lead Free | No | 13 | ULTRA-LOW RESISTANCE | DirectFET™ Isometric L6 | 508μm | 7.1mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N7 | FET General Purpose Power | 1 | DRAIN | Single | 4.3W | 67 ns | 4.3W Ta 83W Tc | 61A | SWITCHING | 0.0007Ohm | 47 ns | SILICON | N-Channel | 0.7m Ω @ 61A, 10V | 2.35V @ 150μA | 6500pF @ 13V | 96nC @ 4.5V | 140ns | 53 ns | 20V | 25V | 270A | 61A Ta 270A Tc | 490A | 530 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR8403 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2013 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | IRFR8403 | 1 | FET General Purpose Power | Single | 99W | 10 ns | 3V | 99W Tc | 100A | 31 ns | N-Channel | 3.1m Ω @ 76A, 10V | 3.9V @ 100μA | 3171pF @ 25V | 99nC @ 10V | 32ns | 23 ns | 20V | 40V | 3 V | 100A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH4210TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2015 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 6mm | RoHS Compliant | Lead Free | No | 5 | 8-PowerTDFN | No SVHC | 900μm | 5mm | 1.1MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 3.6W | 20 ns | 1.6V | 3.6W Ta 104W Tc | 45A | 24 ns | N-Channel | 1.35m Ω @ 50A, 10V | 2.1V @ 100μA | 4812pF @ 13V | 74nC @ 10V | 44ns | 15 ns | 20V | 45A Ta | 25V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR8405 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tube | 2013 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | IRFR8405 | 1 | FET General Purpose Power | Single | 163W | 12 ns | 163W Tc | 100A | 51 ns | N-Channel | 1.98m Ω @ 90A, 10V | 3.9V @ 100μA | 5171pF @ 25V | 155nC @ 10V | 80ns | 51 ns | 20V | 40V | 3 V | 100A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM4226TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 3.3mm | RoHS Compliant | Lead Free | No | 5 | 8-TQFN Exposed Pad | No SVHC | 900μm | 3.3mm | 2.2MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FET General Purpose Power | 1 | DRAIN | Single | 2.7W | 11 ns | 1.6V | 2.7W Ta 39W Tc | 28A | SWITCHING | 14 ns | SILICON | N-Channel | 2.2m Ω @ 30A, 10V | 2.1V @ 50μA | 2000pF @ 13V | 32nC @ 10V | 35ns | 8.1 ns | 20V | 40A | 28A Ta | 25V | 420A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM4234TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | FASTIRFET™, HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 3.3mm | RoHS Compliant | Lead Free | Copper, Silver, Tin | No | 5 | 8-TQFN Exposed Pad | No SVHC | 900μm | 3.3mm | 4.4MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FET General Purpose Power | 1 | DRAIN | Single | 2.8W | 7.8 ns | 1.6V | 2.8W Ta 28W Tc | 20A | SWITCHING | 8 ns | SILICON | N-Channel | 4.4m Ω @ 30A, 10V | 2.1V @ 25μA | 1011pF @ 13V | 17nC @ 10V | 30ns | 5.3 ns | 20V | 63A | 20A Ta | 25V | 270A | 39 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPU50R950CEBKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2015 | CoolMOS™ CE | no | Discontinued | 3 (168 Hours) | EAR99 | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 34W Tc | N-Channel | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 231pF @ 100V | 10.5nC @ 10V | 4.3A Tc | 500V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSD235CH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | 6 | AVALANCHE RATED | 6-VSSOP, SC-88, SOT-363 | No SVHC | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | 8541.21.00.95 | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BSD235 | 500mW | AEC-Q101 | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | Halogen Free | N-CHANNEL AND P-CHANNEL | -20V | 530mA | 0.35Ohm | METAL-OXIDE SEMICONDUCTOR | SILICON | N and P-Channel | 350m Ω @ 950mA, 4.5V | 1.2V @ 1.6μA | 47pF @ 10V | 0.34nC @ 4.5V | 12V | Logic Level Gate | 0.95A | 950mA 530mA | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7103TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 3A | No | 8 | LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 130mOhm | Surface Mount | -55°C~150°C TJ | 50V | ENHANCEMENT MODE | IRF7103TRPBF | e3 | GULL WING | IRF7103PBF | FET General Purpose Power | 2W | 2 | 6.3 mm | Dual | 2W | 5.1 ns | 3V | 100 ns | 3A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 15 ns | SILICON | 2 N-Channel (Dual) | 130m Ω @ 3A, 10V | 3V @ 250μA | 290pF @ 25V | 30nC @ 10V | 8ns | 25 ns | 20V | 50V | 50V | Standard | 3 V | 3A | ||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L26ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Cut Tape (CT) | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~175°C TJ | ENHANCEMENT MODE | e3 | Tin (Sn) | FLAT | NOT SPECIFIED | NOT SPECIFIED | 33W | 33W | AEC-Q101 | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | Halogen Free | 5 ns | 60V | 20A | 0.026Ohm | METAL-OXIDE SEMICONDUCTOR | 18 ns | SILICON | 2 N-Channel (Dual) | 26m Ω @ 17A, 10V | 2.2V @ 10μA | 1430pF @ 25V | 20nC @ 10V | 1.5ns | 10 ns | 16V | Logic Level Gate | 35 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0911NDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Cut Tape (CT) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | R-PDSO-N6 | FET General Purpose Power | 1W | 2 | DRAIN SOURCE | Dual | 2.5W | 30A | METAL-OXIDE SEMICONDUCTOR | 25 ns | SILICON | 2 N-Channel (Dual) Asymmetrical | 3.2m Ω @ 20A, 10V | 2V @ 250μA | 1600pF @ 12V | 12nC @ 4.5V | 5.4ns | 4 ns | 20V | 25V | Logic Level Gate, 4.5V Drive | 18A 30A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0921NDIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | e3 | NOT SPECIFIED | NOT SPECIFIED | 1W | 31A | 2 N-Channel (Dual) Asymmetrical | 5m Ω @ 20A, 10V | 2V @ 250μA | 1025pF @ 15V | 8.9nC @ 4.5V | 20V | Logic Level Gate, 4.5V Drive | 17A 31A | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3004TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | 1.25MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G6 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 380W | 23 ns | 380W Tc | 240A | SWITCHING | 91 ns | SILICON | N-Channel | 1.25m Ω @ 195A, 10V | 4V @ 250μA | 9130pF @ 25V | 240nC @ 10V | 240ns | 160 ns | 20V | 40V | 3.7 V | 240A Tc | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL2505PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 104A | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-220-3 | No SVHC | 15.24mm | 4.69mm | 8mOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 200W | 12 ns | 2V | 200W Tc | 210 ns | 104A | SWITCHING | 43 ns | SILICON | N-Channel | 8m Ω @ 54A, 10V | 2V @ 250μA | 5000pF @ 25V | 130nC @ 5V | 160ns | 84 ns | 16V | 55V | 55V | 2 V | 90A | 104A Tc | 500 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IRF7779L2TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 9 | EAR99 | 9.144mm | ROHS3 Compliant | Lead Free | No | 11 | DirectFET™ Isometric L8 | No SVHC | 508μm | 7.1mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N9 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 125W | 16 ns | 4V | 3.3W Ta 125W Tc | 11A | SWITCHING | 36 ns | SILICON | N-Channel | 11m Ω @ 40A, 10V | 5V @ 250μA | 6660pF @ 25V | 150nC @ 10V | 19ns | 12 ns | 20V | 150V | 67A | 375A Tc | 270A | 270 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFP064NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.875mm | ROHS3 Compliant | Lead Free | 110A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-247-3 | No SVHC | 5.45mm | 24.99mm | 5.3mm | 8MOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 150W | 14 ns | 4V | 200W Tc | 170 ns | 110A | 175°C | SWITCHING | 43 ns | SILICON | N-Channel | 8m Ω @ 59A, 10V | 4V @ 250μA | 4000pF @ 25V | 170nC @ 10V | 100ns | 70 ns | 20V | 55V | 55V | 4 V | 98A | 110A Tc | 480 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPP600N25N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 136W | 10 ns | 250V | 136W Tc | 25A | SWITCHING | 0.06Ohm | 22 ns | SILICON | N-Channel | 60m Ω @ 25A, 10V | 4V @ 90μA | 2350pF @ 100V | 29nC @ 10V | 8 ns | 20V | 25A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3006TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 2.1MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 375W | 14 ns | 375W Tc | 240A | SWITCHING | 118 ns | SILICON | N-Channel | 2.1m Ω @ 168A, 10V | 4V @ 250μA | 8850pF @ 50V | 300nC @ 10V | 61ns | 69 ns | 20V | 60V | 240A Tc | 303 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP3306PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | 4.2MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 220W | 15 ns | 4V | 220W Tc | 31 ns | 160A | SWITCHING | 40 ns | SILICON | N-Channel | 4.2m Ω @ 75A, 10V | 4V @ 150μA | 4520pF @ 50V | 120nC @ 10V | 76ns | 77 ns | 20V | 60V | 120A Tc | 620A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4227PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 19.8mm | 4.82mm | 24MOhm | Through Hole | -40°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 330W | 33 ns | 5V | 330W Tc | 150 ns | 65A | 175°C | SWITCHING | 21 ns | SILICON | N-Channel | 24m Ω @ 46A, 10V | 5V @ 250μA | 4600pF @ 25V | 98nC @ 10V | 20ns | 31 ns | 30V | 200V | 200V | 5 V | 65A Tc | 260A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB025N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | No | 7 | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 300W | 34 ns | 100V | 300W Tc | 180A | SWITCHING | 0.0025Ohm | 84 ns | SILICON | N-Channel | 2.5m Ω @ 100A, 10V | 3.5V @ 275μA | 14800pF @ 50V | 206nC @ 10V | 58ns | 28 ns | 20V | 180A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB64N25S320ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | Halogen Free | 18 ns | 250V | 17.5mOhm | PG-TO263-3-2 | 300W Tc | 64A | 45 ns | N-Channel | 20mOhm @ 64A, 10V | 4V @ 270μA | 7000pF @ 25V | 89nC @ 10V | 20ns | 12 ns | 20V | 64A Tc | 250V | 7nF | 10V | ±20V | 20 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLB4030PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2009 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 15.24mm | 4.69mm | 4.3MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | Single | 370W | 74 ns | 2.5V | 370W Tc | 180A | SWITCHING | 110 ns | SILICON | N-Channel | 4.3m Ω @ 110A, 10V | 2.5V @ 250μA | 11360pF @ 50V | 130nC @ 4.5V | 330ns | 170 ns | 16V | 100V | 100V | 2.5 V | 180A Tc | 4.5V 10V | ±16V |