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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFB4332PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.66mm | ROHS3 Compliant | Lead Free | 60A | No | 3 | TO-220-3 | No SVHC | 19.8mm | 4.82mm | 33MOhm | Through Hole | -40°C~175°C TJ | 250V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 390W | 5V | 390W Tc | 290 ns | 60A | 175°C | SWITCHING | SILICON | N-Channel | 33m Ω @ 35A, 10V | 5V @ 250μA | 5860pF @ 25V | 150nC @ 10V | 30V | 250V | 250V | 5 V | 60A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB072N15N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 300W | 25 ns | 150V | 300W Tc | 100A | SWITCHING | 0.0072Ohm | 46 ns | SILICON | N-Channel | 7.2m Ω @ 100A, 10V | 4V @ 270μA | 5470pF @ 75V | 93nC @ 10V | 35ns | 14 ns | 20V | 100A Tc | 400A | 780 mJ | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFP4710PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2002 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 15.875mm | ROHS3 Compliant | Lead Free | 72A | No | 3 | TO-247-3 | No SVHC | 20.2946mm | 5.3mm | 14Ohm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 190W | 35 ns | 5.5V | 190W Tc | 110 ns | 72A | SWITCHING | 41 ns | SILICON | N-Channel | 14m Ω @ 45A, 10V | 5.5V @ 250μA | 6160pF @ 25V | 170nC @ 10V | 130ns | 38 ns | 20V | 100V | 100V | 5.5 V | 72A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB107N20NAATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 300W | 18 ns | 200V | 300W Tc | 88A | SWITCHING | 41 ns | SILICON | N-Channel | 10.7m Ω @ 88A, 10V | 4V @ 270μA | 7100pF @ 100V | 87nC @ 10V | 26ns | 11 ns | 20V | 88A Tc | 560 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFSA8409-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tube | 2016 | Automotive, AEC-Q101, HEXFET® | Not For New Designs | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 375W Tc | 523A | SWITCHING | 0.00069Ohm | 40V | SILICON | N-Channel | 0.69m Ω @ 100A, 10V | 3.9V @ 250μA | 13975pF @ 25V | 460nC @ 10V | 360A | 523A Tc | 40V | 1440A | 1450 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4468PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | Tin | 3 | TO-247-3 | No SVHC | 24.99mm | 5.3086mm | 2.6MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 250 | 30 | 1 | FET General Purpose Power | Not Qualified | 1 | TO-247AC | DRAIN | Single | 520W | 52 ns | 4V | 520W Tc | 290A | 175°C | SWITCHING | 160 ns | SILICON | N-Channel | 2.6m Ω @ 180A, 10V | 4V @ 250μA | 19860pF @ 50V | 540nC @ 10V | 230ns | 260 ns | 20V | 100V | 100V | 4 V | 195A Tc | 740 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPA60R099C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 35W | 15 ns | 600V | 35W Tc | 37.9A | SWITCHING | 0.099Ohm | 75 ns | SILICON | N-Channel | 99m Ω @ 18.1A, 10V | 3.5V @ 1.21mA | 2660pF @ 100V | 119nC @ 10V | 12ns | 6 ns | 20V | 37.9A Tc | 796 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7506TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Not For New Designs | 2 (1 Year) | 8 | SMD/SMT | 3.048mm | ROHS3 Compliant | Lead Free | No | 8 | LOGIC LEVEL COMPATIBLE | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | No SVHC | 910μm | 3.048mm | 270mOhm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | GULL WING | IRF7506PBF | 1.25W | 2 | Dual | 1.25W | 9.7 ns | -1V | -1.7A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 19 ns | SILICON | 2 P-Channel (Dual) | 270m Ω @ 1.2A, 10V | 1V @ 250μA | 180pF @ 25V | 11nC @ 10V | 12ns | 9.3 ns | 20V | -30V | -30V | Logic Level Gate | -1 V | 1.7A | 30V | 9.6A | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7503TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | Tin | 2.4A | No | 8 | ULTRA LOW RESISTANCE | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | No SVHC | 860μm | 3mm | 135mOhm | Surface Mount | -55°C~150°C TJ | 30V | ENHANCEMENT MODE | e3 | GULL WING | IRF7503PBF | 1.25W | 2 | Dual | 1.25W | 4.7 ns | 1V | 2.4A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 12 ns | SILICON | 2 N-Channel (Dual) | 135m Ω @ 1.7A, 10V | 1V @ 250μA | 210pF @ 25V | 12nC @ 10V | 10ns | 5.3 ns | 20V | 30V | Logic Level Gate | 1 V | 14A | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7303TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | 4.9A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 50mOhm | Surface Mount | -55°C~150°C TJ | 30V | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 30 | IRF7303PBF | 2W | 2 | Dual | 2W | 6.8 ns | 1V | 71 ns | 4.9A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 22 ns | SILICON | 2 N-Channel (Dual) | 50m Ω @ 2.4A, 10V | 1V @ 250μA | 520pF @ 25V | 25nC @ 10V | 21ns | 7.7 ns | 20V | 30V | Standard | 1 V | ||||||||||||||||||||||||||||||||||||||||||||
| BSG0811NDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 7 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-N7 | 2.5W | 2.5W | 2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | Halogen Free | 25V | 41A | SWITCHING | 0.004Ohm | METAL-OXIDE SEMICONDUCTOR | SILICON | 2 N-Channel (Dual) Asymmetrical | 3m Ω @ 20A, 10V | 2V @ 250μA | 1100pF @ 12V | 8.4nC @ 4.5V | Logic Level Gate, 4.5V Drive | 19A | 19A 41A | 160A | 30 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLHS6376TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | 6-VDFN Exposed Pad | No SVHC | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | IRLHS6376 | FET General Purpose Power | 1.5W | 2 | DRAIN | Dual | 1.5W | 4.4 ns | 800mV | 3.6A | SWITCHING | 0.082Ohm | METAL-OXIDE SEMICONDUCTOR | 11 ns | SILICON | 2 N-Channel (Dual) | 63m Ω @ 3.4A, 4.5V | 1.1V @ 10μA | 270pF @ 25V | 2.8nC @ 4.5V | 11ns | 9.4 ns | 12V | 30V | Logic Level Gate | 800 mV | 3.4A | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9952TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 3.5A | No | 8 | HIGH RELIABILITY | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 100mOhm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | DUAL | GULL WING | IRF9952PBF | 2W | 2 | N-CHANNEL AND P-CHANNEL | 2W | 1V | 3.5A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 20 ns | SILICON | N and P-Channel | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 190pF @ 15V | 14nC @ 10V | 14ns | 20V | 30V | Logic Level Gate | 1 V | 3.5A 2.3A | 16A | 44 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSL215CH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | 6 | AVALANCHE RATED | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 1.1mm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | 2 | 500mW | 2 | Halogen Free | N-CHANNEL AND P-CHANNEL | 500mW | -900μV | -20V | 1.5A | SWITCHING | 0.14Ohm | METAL-OXIDE SEMICONDUCTOR | SILICON | N and P-Channel Complementary | 140m Ω @ 1.5A, 4.5V | 1.2V @ 3.7μA | 143pF @ 10V | 0.73nC @ 4.5V | 12V | Logic Level Gate, 2.5V Drive | 20V | 9 pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R150CFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Cut Tape (CT) | 2008 | CoolMOS™ | no | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.7mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 195.3W | 12.4 ns | 650V | 195.3W Tc | 22.4A | 150°C | SWITCHING | 52.8 ns | SILICON | N-Channel | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 2340pF @ 100V | 86nC @ 10V | 7.6ns | 5.6 ns | 20V | 650V | 22.4A Tc | 72A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFB4615PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 16.51mm | 4.826mm | 39MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | Single | 144W | 15 ns | 3V | 144W Tc | 35A | SWITCHING | 25 ns | SILICON | N-Channel | 39m Ω @ 21A, 10V | 5V @ 100μA | 1750pF @ 50V | 26nC @ 10V | 35ns | 20 ns | 20V | 150V | 150V | 3 V | 35A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSS119NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2002 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | Tin | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 1 | FET General Purpose Power | 1 | Halogen Free | Single | 500mW | 2.7 ns | 100V | 500mW Ta | 190mA | 150°C | 6Ohm | 7 ns | SILICON | N-Channel | 6 Ω @ 190mA, 10V | 2.3V @ 13μA | 20.9pF @ 25V | 0.6nC @ 10V | 3.3ns | 18.8 ns | 20V | 100V | 190mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSS306NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-SOT23 | e3 | DUAL | GULL WING | 3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 500mW | 4.4 ns | 1.2V | 30V | 500mW Ta | 2.3A | 150°C | 0.057Ohm | 8.3 ns | SILICON | N-Channel | 57m Ω @ 2.3A, 10V | 2V @ 11μA | 275pF @ 15V | 1.5nC @ 5V | 2.3ns | 20V | 30V | 2.3A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF9956TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 3.5A | No | 8 | AVALANCHE RATED, HIGH RELIABILITY | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | 20V | ENHANCEMENT MODE | GULL WING | IRF9956PBF | 2W | 2 | Dual | 2W | 6.2 ns | 3.5A | SWITCHING | 0.1Ohm | METAL-OXIDE SEMICONDUCTOR | 13 ns | SILICON | 2 N-Channel (Dual) | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 190pF @ 15V | 14nC @ 10V | 8.8ns | 3 ns | 20V | 30V | Logic Level Gate | 20 V | 16A | 44 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSC750N10NDGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | No | 8 | AVALANCHE RATED | 8-PowerVDFN | 1mm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | FLAT | BSC750N10 | 8 | R-PDSO-F6 | 2 | 2 | DRAIN | Halogen Free | 26W | 9 ns | 3V | 100V | 13A | SWITCHING | 0.075Ohm | METAL-OXIDE SEMICONDUCTOR | 13 ns | SILICON | 2 N-Channel (Dual) | 75m Ω @ 13A, 10V | 4V @ 12μA | 720pF @ 50V | 11nC @ 10V | 4ns | 20V | 100V | Standard | 3.2A | 17 mJ | |||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S412AATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | Surface Mount, Wettable Flank | -55°C~175°C TJ | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 41W | Halogen Free | 40V | 20A | 2 N-Channel (Dual) | 12.2m Ω @ 17A, 10V | 4V @ 15μA | 1470pF @ 25V | 18nC @ 10V | Standard | 40V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO604NS2XUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 3 (168 Hours) | 8 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 5A | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | 55V | ENHANCEMENT MODE | e3 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BSO604NS2 | 8 | Not Qualified | 2W | 2W | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | Halogen Free | 55V | 5A | SWITCHING | 0.044Ohm | METAL-OXIDE SEMICONDUCTOR | SILICON | 2 N-Channel (Dual) | 35m Ω @ 2.5A, 10V | 2V @ 30μA | 870pF @ 25V | 26nC @ 10V | 8ns | 20V | Logic Level Gate | 5A | 20A | 90 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L11ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~175°C TJ | ENHANCEMENT MODE | e3 | Tin (Sn) | FLAT | NOT SPECIFIED | NOT SPECIFIED | 65W | 65W | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | Halogen Free | 11 ns | 60V | 20A | 0.0112Ohm | METAL-OXIDE SEMICONDUCTOR | 58 ns | SILICON | 2 N-Channel (Dual) | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 4020pF @ 25V | 53nC @ 10V | 3ns | 19 ns | 16V | Logic Level Gate | 165 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI4019HG-117P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2009 | Obsolete | 1 (Unlimited) | 5 | EAR99 | RoHS Compliant | No | 5 | HIGH RELIABILITY | TO-220-5 Full Pack (Formed Leads) | Through Hole | -55°C~150°C TJ | ENHANCEMENT MODE | SINGLE | FET General Purpose Power | 18W | 2 | ISOLATED | Dual | 18W | 7 ns | 8.7A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 13 ns | SILICON | 2 N-Channel (Dual) | 95m Ω @ 5.2A, 10V | 4.9V @ 50μA | 810pF @ 25V | 20nC @ 10V | 6.6ns | 3.1 ns | 20V | 150V | Standard | 150V | 34A | 77 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS606NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 4 | TO-243AA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Halogen Free | Single | 1W | 60V | 60mOhm | PG-SOT89 | 1W Ta | 3.2A | N-Channel | 60mOhm @ 3.2A, 10V | 2.3V @ 15μA | 657pF @ 25V | 5.6nC @ 5V | 20V | 3.2A Ta | 60V | 657pF | 4.5V 10V | ±20V | 60 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N04S4L04ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 7 ns | 40V | 71W Tc | 90A | 22 ns | SILICON | N-Channel | 3.8m Ω @ 90A, 10V | 2.2V @ 35μA | 4690pF @ 25V | 60nC @ 10V | 11ns | 28 ns | 20V | 90A Tc | 95 mJ | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC90N04S53R6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 63W Tc | 0.0044Ohm | 40V | SILICON | N-Channel | 3.6m Ω @ 45A, 10V | 3.4V @ 23μA | 1950pF @ 25V | 32.6nC @ 10V | 90A | 90A Tc | 40V | 360A | 40 mJ | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC196N10NSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 78W | 3V | 100V | 78W Tc | 45A | SWITCHING | SILICON | N-Channel | 19.6m Ω @ 45A, 10V | 4V @ 42μA | 2300pF @ 50V | 34nC @ 10V | 22ns | 20V | 8.5A Ta 45A Tc | 60 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSZ0901NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N3 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 5 ns | 30V | 2.1W Ta 50W Tc | 25A | SWITCHING | 0.0026Ohm | 27 ns | SILICON | N-Channel | 2m Ω @ 20A, 10V | 2.2V @ 250μA | 2850pF @ 15V | 45nC @ 10V | 7.2ns | 4.6 ns | 20V | 22A | 22A Ta 40A Tc | 160A | 150 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD22N08S2L50ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 75V | 75W Tc | 27A | 0.065Ohm | SILICON | N-Channel | 50m Ω @ 50A, 10V | 2V @ 31μA | 630pF @ 25V | 33nC @ 10V | 27A Tc | 108A | 94 mJ | 5V 10V | ±20V |