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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSC060P03NS3EGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | -2.5V | -30V | 2.5W Ta 83W Tc | 17.7A | SWITCHING | 0.006Ohm | SILICON | P-Channel | 6m Ω @ 50A, 10V | 3.1V @ 150μA | 6020pF @ 15V | 81nC @ 10V | 139ns | 25V | 17.7A Ta 100A Tc | 30V | 200A | 6V 10V | ±25V | |||||||||||||||||||||||||||
| BSP299H6327XUSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | SIPMOS® | yes | Last Time Buy | 3 (168 Hours) | 4 | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | No | 4 | AVALANCHE RATED | TO-261-4, TO-261AA | No SVHC | 1.6mm | 3.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | 4 | 1 | DRAIN | Halogen Free | Single | 1.5W | 8 ns | 3V | 500V | 1.8W Ta | 400mA | 4Ohm | 55 ns | SILICON | N-Channel | 4 Ω @ 400mA, 10V | 4V @ 1mA | 400pF @ 25V | 15ns | 30 ns | 20V | 500V | 3 V | 400mA Ta | 10V | ±20V | |||||||||||||||||||||||||||
| IRFH7545TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | 6.15mm | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | 1.17mm | 5.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 8.6 ns | 83W Tc | 85A | 43 ns | N-Channel | 5.2m Ω @ 51A, 10V | 3.7V @ 100μA | 3890pF @ 25V | 110nC @ 10V | 26ns | 16 ns | 20V | 85A Tc | 60V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSC025N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 83W | 22 ns | 30V | 2.5W Ta 83W Tc | 23A | SWITCHING | 0.003Ohm | 29 ns | SILICON | N-Channel | 2.5m Ω @ 30A, 10V | 2V @ 250μA | 7600pF @ 15V | 98nC @ 10V | 11ns | 16V | 23A Ta . 100A Tc | 400A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IRF8788TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 2.8MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | Single | 2.5W | 23 ns | 2.5W Ta | 24A | 23 ns | N-Channel | 2.8m Ω @ 24A, 10V | 2.35V @ 100μA | 5720pF @ 15V | 66nC @ 4.5V | 24ns | 11 ns | 20V | 30V | 1.8 V | 24A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSC032N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 40V | 2.5W Ta 52W Tc | 98A | SWITCHING | 0.0044Ohm | SILICON | N-Channel | 3.2m Ω @ 50A, 10V | 2V @ 250μA | 1800pF @ 20V | 25nC @ 10V | 4ns | 20V | 21A Ta 98A Tc | 392A | 30 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF6620TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | 27A | No | 5 | LOW CONDUCTION LOSS | DirectFET™ Isometric MX | No SVHC | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 18 ns | 2.8W Ta 89W Tc | 22A | SWITCHING | 0.0027Ohm | 20 ns | SILICON | N-Channel | 2.7m Ω @ 27A, 10V | 2.45V @ 250μA | 4130pF @ 10V | 42nC @ 4.5V | 80ns | 6.6 ns | 20V | 20V | 2.45 V | 27A Ta 150A Tc | 220A | 39 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| BSC0901NSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 5 ns | 30V | 2.5W Ta 69W Tc | 28A | SWITCHING | 0.0026Ohm | 27 ns | SILICON | N-Channel | 2m Ω @ 30A, 10V | 2.2V @ 250μA | 2600pF @ 15V | 20nC @ 15V | 7.2ns | 4.6 ns | 20V | 28A Ta 100A Tc | 400A | 45 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| IRF7451TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | 3.6A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 10 ns | 2.5W Ta | 3.6A | SWITCHING | 0.09Ohm | 17 ns | SILICON | N-Channel | 90m Ω @ 2.2A, 10V | 5.5V @ 250μA | 990pF @ 25V | 41nC @ 10V | 4.2ns | 15 ns | 30V | 150V | 3.6A Ta | 29A | 10V | ±30V | |||||||||||||||||||||||||||||||||
| BSC046N02KSGAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 3 (168 Hours) | 5 | EAR99 | 6.35mm | ROHS3 Compliant | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | No SVHC | not_compliant | 1.1mm | 5.35mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | YES | R-PDSO-F5 | Not Qualified | 1 | DRAIN | Halogen Free | Single | 48W | 15 ns | 950mV | 2.8W Ta 48W Tc | 80A | SWITCHING | 0.0046Ohm | 34 ns | SILICON | N-Channel | 4.6m Ω @ 50A, 4.5V | 1.2V @ 110μA | 4100pF @ 10V | 27.6nC @ 4.5V | 117ns | 6 ns | 12V | 20V | 950 mV | 19A | 19A Ta 80A Tc | 200A | 151 mJ | 2.5V 4.5V | ±12V | ||||||||||||||||||||
| IPD90N04S403ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 14 ns | 40V | 94W Tc | 90A | SILICON | N-Channel | 3.2m Ω @ 90A, 10V | 4V @ 53μA | 5260pF @ 25V | 66.8nC @ 10V | 11ns | 15 ns | 20V | 90A Tc | 185 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPD60R600E6 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2015 | CoolMOS™ | no | Discontinued | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 63W Tc | SWITCHING | 0.6Ohm | 600V | SILICON | N-Channel | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 440pF @ 100V | 20.5nC @ 10V | 7.3A | 7.3A Tc | 600V | 19A | 133 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFS4610TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 14MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 190W | 18 ns | 4V | 190W Tc | 73A | SWITCHING | 53 ns | SILICON | N-Channel | 14m Ω @ 44A, 10V | 4V @ 100μA | 3550pF @ 50V | 140nC @ 10V | 87ns | 70 ns | 20V | 100V | 73A Tc | 290A | 10V | ±20V | ||||||||||||||||||||||||||
| IAUC120N04S6L008ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 150W Tc | N-Channel | 0.8m Ω @ 60A, 10V | 2V @ 90μA | 7910pF @ 25V | 140nC @ 10V | 120A Tc | 40V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R230C7AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | CoolMOS™ C7 | yes | Active | 2A (4 Weeks) | 4 | ROHS3 Compliant | Contains Lead | 4 | 4-PowerTSFN | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 67W | 8 ns | 650V | 67W Tc | 10A | SWITCHING | 0.23Ohm | 71 ns | SILICON | N-Channel | 230m Ω @ 2.4A, 10V | 4V @ 240μA | 996pF @ 400V | 20nC @ 10V | 5ns | 22 ns | 20V | 10A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF3808STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | 7MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 16 ns | 4V | 200W Tc | 106A | 175°C | SWITCHING | 68 ns | SILICON | N-Channel | 7m Ω @ 82A, 10V | 4V @ 250μA | 5310pF @ 25V | 220nC @ 10V | 140ns | 120 ns | 20V | 75V | 75A | 106A Tc | 550A | 10V | ±20V | ||||||||||||||||||||||||
| IRF60DM206 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Reel (TR) | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | DirectFET™ Isometric ME | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 96W Tc | 130A | N-Channel | 2.9m Ω @ 80A, 10V | 3.7V @ 150μA | 6530pF @ 25V | 200nC @ 10V | 130A Tc | 60V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R170CFD7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ CFD7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 76W Tc | SWITCHING | 0.17Ohm | 600V | SILICON | N-Channel | 170m Ω @ 6A, 10V | 4.5V @ 300μA | 1199pF @ 400V | 28nC @ 10V | 14A | 14A Tc | 650V | 51A | 60 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPD80R280P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | CoolMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 101W Tc | SWITCHING | 0.28Ohm | 800V | SILICON | N-Channel | 280m Ω @ 7.2A, 10V | 3.5V @ 360μA | 1200pF @ 500V | 36nC @ 10V | Super Junction | 17A Tc | 800V | 45A | 43 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSC350N20NSFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W | 8 ns | 150W Tc | 35A | 175°C | SWITCHING | 0.035Ohm | 17 ns | SILICON | N-Channel | 35m Ω @ 35A, 10V | 4V @ 90μA | 2410pF @ 100V | 30nC @ 10V | 20V | 200V | 35A Tc | 97 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
| BSB044N08NN3GXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Not For New Designs | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Silver | 3 | 3-WDSON | No SVHC | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.8V | 80V | 2.2W Ta 78W Tc | 18A | SWITCHING | 0.0044Ohm | SILICON | N-Channel | 4.4m Ω @ 30A, 10V | 3.5V @ 97μA | 5700pF @ 40V | 73nC @ 10V | 9ns | 20V | 18A Ta 90A Tc | 660 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFS7730TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 7 | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 20 ns | 375W Tc | 240A | 182 ns | N-Channel | 2m Ω @ 100A, 10V | 3.7V @ 250μA | 13970pF @ 25V | 428nC @ 10V | 90ns | 91 ns | 20V | 75V | 240A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSC093N15NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 139W | 14 ns | 3.8V | 150V | 139W Tc | 87A | 150°C | SWITCHING | 0.0093Ohm | 14.4 ns | SILICON | N-Channel | 9.3m Ω @ 44A, 10V | 4.6V @ 107μA | 3230pF @ 75V | 40.7nC @ 10V | 20V | 150V | 87A Tc | 8V 10V | ±20V | ||||||||||||||||||||||||||||
| IRFS7530TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 7 | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | 5.084mm | 9.65mm | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | 1 | Single | 375W | 24 ns | 3.7V | 375W Tc | 240A | 175°C | 168 ns | SILICON | N-Channel | 1.4m Ω @ 100A, 10V | 3.7V @ 250μA | 12960pF @ 25V | 354nC @ 10V | 102ns | 79 ns | 20V | 60V | 240A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPT65R195G7XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | CoolMOS™ C7 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 8-PowerSFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 97W Tc | N-Channel | 195m Ω @ 4.8A, 10V | 4V @ 240μA | 996pF @ 400V | 20nC @ 10V | 14A Tc | 650V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R160C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 176W | 13 ns | 600V | 176W Tc | 23.8A | SWITCHING | 96 ns | SILICON | N-Channel | 160m Ω @ 11.3A, 10V | 3.5V @ 750μA | 1660pF @ 100V | 75nC @ 10V | 8 ns | 20V | 23.8A Tc | 70A | 497 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPB100N06S205ATMA4 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 55V | 300W Tc | 100A | 0.0047Ohm | SILICON | N-Channel | 4.7m Ω @ 80A, 10V | 4V @ 250μA | 5110pF @ 25V | 170nC @ 10V | 100A Tc | 400A | 810 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFS4010TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | FET General Purpose Power | 1 | Single | 380W | 19 ns | 380W Tc | 190A | 100 ns | N-Channel | 4m Ω @ 110A, 10V | 4V @ 250μA | 9830pF @ 50V | 230nC @ 10V | 56ns | 48 ns | 20V | 100V | 4 V | 190A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPB015N04LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 250W | 25 ns | 40V | 250W Tc | 120A | SWITCHING | 108 ns | SILICON | N-Channel | 1.5m Ω @ 100A, 10V | 2V @ 200μA | 28000pF @ 25V | 346nC @ 10V | 13ns | 21 ns | 20V | 120A Tc | 400A | 865 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| IRF7739L1TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 15 | DirectFET™ Isometric L8 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 3.8W | 21 ns | 3.8W Ta 125W Tc | 270A | 56 ns | N-Channel | 1m Ω @ 160A, 10V | 4V @ 250μA | 11880pF @ 25V | 330nC @ 10V | 71ns | 42 ns | 20V | 375A | 46A Ta 270A Tc | 40V | 10V | ±20V |