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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSZ120P03NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 52W | 13 ns | -2.5V | -30V | 2.1W Ta 52W Tc | 40A | SWITCHING | 0.02Ohm | 23 ns | SILICON | P-Channel | 12m Ω @ 20A, 10V | 3.1V @ 73μA | 3360pF @ 15V | 45nC @ 10V | 11ns | 5 ns | 25V | 11A Ta 40A Tc | 30V | 73 mJ | 6V 10V | ±25V | ||||||||||||||||||||||||||||||||
| BSC090N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 30V | 2.5W Ta 32W Tc | 12A | SWITCHING | SILICON | N-Channel | 9m Ω @ 30A, 10V | 2V @ 250μA | 1900pF @ 15V | 24nC @ 10V | 5ns | 16V | 12A Ta 48A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSZ088N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 30V | 2.1W Ta 35W Tc | 12A | SWITCHING | SILICON | N-Channel | 8.8m Ω @ 20A, 10V | 2.2V @ 250μA | 1700pF @ 15V | 21nC @ 10V | 2.8ns | 20V | 40A | 12A Ta 40A Tc | 25 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPN60R600P7SATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-261-3 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 7W Tc | SWITCHING | 0.6Ohm | 600V | SILICON | N-Channel | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 363pF @ 400V | 9nC @ 10V | 6A Tc | 600V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9321TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 7.2MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 21 ns | -1.8V | 2.5W Ta | -15A | 150°C | SWITCHING | 185 ns | SILICON | P-Channel | 7.2m Ω @ 15A, 10V | 2.4V @ 50μA | 2590pF @ 25V | 98nC @ 10V | 79ns | 145 ns | 20V | -30V | -1.8 V | 15A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPN70R600P7SATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-261-3 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.9W Tc | SWITCHING | 0.6Ohm | 700V | SILICON | N-Channel | 600m Ω @ 1.8A, 10V | 3.5V @ 90μA | 364pF @ 400V | 10.5nC @ 10V | 8.5A Tc | 700V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD78CN10NGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 31W | 9 ns | 100V | 31W Tc | 13A | SWITCHING | 0.078Ohm | 13 ns | SILICON | N-Channel | 78m Ω @ 13A, 10V | 4V @ 12μA | 716pF @ 50V | 11nC @ 10V | 4ns | 3 ns | 20V | 13A Tc | 52A | 17 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFB4019PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2006 | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 19.8mm | 4.82mm | 95MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 80mW | 7 ns | 4.9V | 80W Tc | 96 ns | 17A | 175°C | AMPLIFIER | 12 ns | SILICON | N-Channel | 95m Ω @ 10A, 10V | 4.9V @ 50μA | 800pF @ 50V | 20nC @ 10V | 13ns | 7.8 ns | 20V | 150V | 150V | 4.9 V | 17A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPA086N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 37.5W | 16 ns | 100V | 37.5W Tc | 45A | SWITCHING | 0.0086Ohm | 27 ns | SILICON | N-Channel | 8.6m Ω @ 45A, 10V | 3.5V @ 75μA | 3980pF @ 50V | 55nC @ 10V | 10ns | 8 ns | 20V | 45A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFS7734TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 6 | EAR99 | 10.54mm | ROHS3 Compliant | Lead Free | 6 | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | 4.83mm | 9.65mm | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | DRAIN | Single | 17 ns | 294W Tc | 197A | SWITCHING | 0.00305Ohm | 75V | 123 ns | SILICON | N-Channel | 3.05m Ω @ 100A, 10V | 3.7V @ 150μA | 10130pF @ 25V | 270nC @ 10V | 85ns | 75 ns | 20V | 197A Tc | 75V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF7749L2TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Not For New Designs | 1 (Unlimited) | 9 | EAR99 | 9.144mm | ROHS3 Compliant | No | 8 | DirectFET™ Isometric L8 | No SVHC | 740μm | 7.112mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | IRF7749L2TRPBF | e1 | TIN SILVER COPPER | BOTTOM | 260 | 30 | R-XBCC-N9 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 29 ns | 4V | 3.3W Ta 125W Tc | 33A | 175°C | SWITCHING | 72 ns | SILICON | N-Channel | 1.5m Ω @ 120A, 10V | 4V @ 250μA | 12320pF @ 25V | 300nC @ 10V | 43ns | 39 ns | 60V | 60V | 2.9 V | 375A | 33A Ta 375A Tc | 260 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
| AUIRF7749L2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | DirectFET™ Isometric L8 | 740μm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | AUIRF7749L2TR | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.8W | 29 ns | 2V | 3.8W Ta 341W Tc | 36A | 175°C | 72 ns | N-Channel | 1.5m Ω @ 120A, 10V | 4V @ 250μA | 10655pF @ 25V | 275nC @ 10V | 60V | 60V | 36A Ta 345A Tc | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT059N15N3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 8-PowerSFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-F2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 375W Tc | SWITCHING | 0.0059Ohm | 150V | SILICON | N-Channel | 5.9m Ω @ 150A, 10V | 4V @ 270μA | 7200pF @ 75V | 92nC @ 10V | 155A | 155A Tc | 150V | 620A | 520 mJ | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPL60R065P7AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 2A (4 Weeks) | 4 | EAR99 | ROHS3 Compliant | 4-PowerTSFN | not_compliant | 1.1mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PSSO-N4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 201W | 16 ns | 201W Tc | 41A | 150°C | SWITCHING | 0.065Ohm | 73 ns | SILICON | N-Channel | 65m Ω @ 15.9A, 10V | 4V @ 800μA | 2895pF @ 400V | 67nC @ 10V | 20V | 600V | 41A Tc | 650V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPB60R040C7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ C7 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 4.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 227W | 18.5 ns | 34mOhm | PG-TO263-3 | 227W Tc | 50A | 150°C | 81 ns | N-Channel | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 4340pF @ 400V | 107nC @ 10V | 20V | 600V | 50A Tc | 650V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT60R028G7XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ G7 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerSFN | 2.4mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-HSOF-8 | e3 | Tin (Sn) | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-F3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 391W | 28 ns | 391W Tc | 75A | 150°C | SWITCHING | 0.028Ohm | 100 ns | SILICON | N-Channel | 28m Ω @ 28.8A, 10V | 4V @ 1.44mA | 4820pF @ 400V | 123nC @ 10V | 20V | 600V | 75A Tc | 245A | 288 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IGT60R070D1ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | CoolGaN™ | Active | 1 (Unlimited) | ROHS3 Compliant | 8-PowerSFN | Surface Mount | -55°C~150°C TJ | GaNFET (Gallium Nitride) | 125W Tc | N-Channel | 1.6V @ 2.6mA | 380pF @ 400V | 31A Tc | 600V | -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGO60R070D1AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | CoolGaN™ | Active | 1 (Unlimited) | ROHS3 Compliant | 20-PowerSOIC (0.433, 11.00mm Width) | Surface Mount | -55°C~150°C TJ | GaNFET (Gallium Nitride) | 125W Tc | N-Channel | 1.6V @ 2.6mA | 380pF @ 400V | 31A Tc | 600V | -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB033N10N5LFATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™-5 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 179W | 8 ns | 3.3V | 179W Tc | 120A | 0.0033Ohm | 64 ns | SILICON | N-Channel | 3.3m Ω @ 100A, 10V | 4.1V @ 150μA | 460pF @ 50V | 102nC @ 10V | 20V | 100V | 23A | 120A Tc | 480A | 273 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IGOT60R070D1AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | CoolGaN™ | Active | 3 (168 Hours) | ROHS3 Compliant | 20-PowerSOIC (0.433, 11.00mm Width) | Surface Mount | -55°C~150°C TJ | GaNFET (Gallium Nitride) | 125W Tc | N-Channel | 1.6V @ 2.6mA | 380pF @ 400V | 31A Tc | 600V | -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R600P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 28W Tc | SWITCHING | 0.6Ohm | 800V | SILICON | N-Channel | 600m Ω @ 3.4A, 10V | 3.5V @ 170μA | 570pF @ 500V | 20nC @ 10V | 8A Tc | 800V | 22A | 20 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPI029N06NAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 136W | 60V | 3W Ta 136W Tc | 100A | SWITCHING | 0.0029Ohm | 30 ns | SILICON | N-Channel | 2.9m Ω @ 100A, 10V | 2.8V @ 75μA | 4100pF @ 30V | 56nC @ 10V | 15ns | 8 ns | 20V | 60V | 24A | 24A Ta 100A Tc | 400A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP12CN10LGXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | LOGIC LEVL COMPATIBLE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 125W | 14 ns | 100V | 125W Tc | 69A | SWITCHING | 39 ns | SILICON | N-Channel | 12m Ω @ 69A, 10V | 2.4V @ 83μA | 5600pF @ 50V | 58nC @ 10V | 9ns | 5 ns | 20V | 69A Tc | 276A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP50R280CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 8 ns | 500V | 92W Tc | 13A | SWITCHING | 0.28Ohm | 40 ns | SILICON | N-Channel | 280m Ω @ 4.2A, 13V | 3.5V @ 350μA | 773pF @ 100V | 32.6nC @ 10V | 6.4ns | 7.6 ns | 20V | Super Junction | 13A Tc | 42.9A | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPA083N10N5XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-220-3 Full Pack | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | TO-220AB | ISOLATED | Halogen Free | Single | 15 ns | 100V | 36W Tc | 44A | SWITCHING | 0.0083Ohm | 24 ns | SILICON | N-Channel | 8.3m Ω @ 44A, 10V | 3.8V @ 49μA | 2730pF @ 50V | 37nC @ 10V | 5ns | 5 ns | 20V | 100V | 44A Tc | 70 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP60R280CFD7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ CFD7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 52W Tc | SWITCHING | 0.28Ohm | 600V | SILICON | N-Channel | 280m Ω @ 3.6A, 10V | 4.5V @ 180μA | 807pF @ 400V | 18nC @ 10V | 9A | 9A Tc | 650V | 31A | 36 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP040N06N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 188W | 30 ns | 60V | 188W Tc | 90A | SWITCHING | 0.004Ohm | 40 ns | SILICON | N-Channel | 4m Ω @ 90A, 10V | 4V @ 90μA | 11000pF @ 30V | 98nC @ 10V | 70ns | 5 ns | 20V | 90A Tc | 165 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSZ0506NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 30V | 2.1W Ta 27W Tc | 40A | SWITCHING | 0.0053Ohm | SILICON | N-Channel | 4.4m Ω @ 20A, 10V | 2V @ 250μA | 950pF @ 15V | 15nC @ 10V | 2.4ns | 20V | 15A | 15A Ta 40A Tc | 160A | 20 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPD65R650CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | CoolMOS™ CE | yes | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 650V | 86W Tc | 7A | SWITCHING | 0.65Ohm | SILICON | N-Channel | 650m Ω @ 2.1A, 10V | 3.5V @ 210μA | 440pF @ 100V | 23nC @ 10V | 7A Tc | 18A | 142 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLR8259TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 48W | 8.4 ns | 48W Tc | 57A | SWITCHING | 0.0087Ohm | 9.1 ns | SILICON | N-Channel | 8.7m Ω @ 21A, 10V | 2.35V @ 25μA | 900pF @ 13V | 10nC @ 4.5V | 38ns | 8.9 ns | 20V | 25V | 42A | 57A Tc | 67 mJ | 4.5V 10V | ±20V |