Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IRF7739L2TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Not For New Designs | 1 (Unlimited) | 9 | EAR99 | 9.144mm | ROHS3 Compliant | Lead Free | No | 11 | DirectFET™ Isometric L8 | 508μm | 7.112mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | BOTTOM | 260 | 30 | R-XBCC-N9 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 21 ns | 3.8W Ta 125W Tc | 46A | SWITCHING | 56 ns | SILICON | N-Channel | 1m Ω @ 160A, 10V | 4V @ 250μA | 11880pF @ 25V | 330nC @ 10V | 71ns | 42 ns | 20V | 40V | 375A | 46A Ta 375A Tc | 270 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
AUIRF1324S-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Not For New Designs | 1 (Unlimited) | 6 | EAR99 | 175°C | -55°C | 10.35mm | ROHS3 Compliant | Tin | No | 7 | ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | 4.55mm | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-XSSO-G6 | FET General Purpose Power | 300W | 1 | DRAIN | Single | 300W | 19 ns | 2V | 429A | SWITCHING | 86 ns | N-Channel | 1m Ω @ 160A, 10V | 4V @ 250μA | 7700pF @ 19V | 252nC @ 10V | 240ns | 93 ns | 20V | 24V | 240A | 240A Tc | 230 mJ | |||||||||||||||||||||||||||||||||||||||
IPA60R165CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 34W | 12 ns | 600V | 34W Tc | 21A | SWITCHING | 650V | 50 ns | SILICON | N-Channel | 165m Ω @ 12A, 10V | 3.5V @ 660μA | 2000pF @ 100V | 52nC @ 10V | 5ns | 20V | 21A Tc | 522 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPP60R280C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 104W | 13 ns | 600V | 104W Tc | 13.8A | SWITCHING | 0.28Ohm | 100 ns | SILICON | N-Channel | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 950pF @ 100V | 43nC @ 10V | 11ns | 12 ns | 20V | 13.8A Tc | 40A | 284 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRFS59N10DTRLP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 59A | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 10.54mm | 25mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | Not Qualified | 1 | DRAIN | Single | 200W | 16 ns | 5.5V | 3.8W Ta 200W Tc | 59A | SWITCHING | 20 ns | SILICON | N-Channel | 25m Ω @ 35.4A, 10V | 5.5V @ 250μA | 2450pF @ 25V | 114nC @ 10V | 90ns | 12 ns | 30V | 100V | 100V | 5.5 V | 59A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||
IPP80N06S209AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | TO-220-3 | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | R-PSFM-T3 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 55V | 190W Tc | 80A | 0.0091Ohm | SILICON | N-Channel | 9.1m Ω @ 50A, 10V | 4V @ 125μA | 2360pF @ 25V | 80nC @ 10V | 80A Tc | 320A | 370 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R280E6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 32W | 600V | 32W Tc | 13.8A | SWITCHING | 0.28Ohm | SILICON | N-Channel | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 950pF @ 100V | 43nC @ 10V | 20V | 13.8A Tc | 40A | 284 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
BTS247ZE3062AATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TEMPFET® | Active | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | Contains Lead | Tin | 5 | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | Surface Mount | 1.59999g | -40°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Halogen Free | Single | 120W | 15 ns | 55V | 18mOhm | PG-TO263-5-2 | 120W Tc | 33A | 30 ns | N-Channel | 18mOhm @ 12A, 10V | 2V @ 90μA | 1730pF @ 25V | 90nC @ 10V | 30ns | 20 ns | 20V | 55V | Temperature Sensing Diode | 33A Tc | 55V | 1.73nF | 4.5V 10V | ±20V | 18 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
AUIRF7737L2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 7 | EAR99 | ROHS3 Compliant | Lead Free | No | 13 | HIGH RELIABILITY | DirectFET™ Isometric L6 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | R-XBCC-N7 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 83W | 12 ns | 3.3W Ta 83W Tc | 31A | SWITCHING | 22 ns | SILICON | N-Channel | 1.9m Ω @ 94A, 10V | 4V @ 150μA | 5469pF @ 25V | 134nC @ 10V | 19ns | 14 ns | 20V | 40V | 31A Ta 156A Tc | 624A | 386 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
AUIRFSL8407 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.65mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 230W | 19 ns | 230W Tc | 195A | 78 ns | N-Channel | 2m Ω @ 100A, 10V | 4V @ 150μA | 7330pF @ 25V | 225nC @ 10V | 70ns | 53 ns | 20V | 40V | 3 V | 195A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IPI90R500C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSIP-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 156W Tc | SWITCHING | 0.5Ohm | 900V | SILICON | N-Channel | 500m Ω @ 6.6A, 10V | 3.5V @ 740μA | 1700pF @ 100V | 68nC @ 10V | 11A | 11A Tc | 900V | 24A | 388 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
SPA11N65C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 33W Tc | SWITCHING | 0.38Ohm | 650V | SILICON | N-Channel | 380m Ω @ 7A, 10V | 3.9V @ 500μA | 1200pF @ 25V | 60nC @ 10V | 11A | 11A Tc | 650V | 33A | 340 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IPB65R190CFDAATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Automotive, AEC-Q101, CoolMOS™ | Active | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 650V | D2PAK (TO-263AB) | 151W Tc | 17.5A | N-Channel | 190mOhm @ 7.3A, 10V | 4.5V @ 700μA | 1850pF @ 100V | 68nC @ 10V | 17.5A Tc | 650V | 1.85nF | 10V | ±20V | 190 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N10S305ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 300W | 34 ns | 100V | 300W Tc | 100A | 0.0048Ohm | 60 ns | SILICON | N-Channel | 4.8m Ω @ 100A, 10V | 4V @ 240μA | 11570pF @ 25V | 176nC @ 10V | 17ns | 20 ns | 20V | 100A Tc | 400A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
AUIRFS8407-7TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2013 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | YES | FET General Purpose Power | Single | 231W Tc | N-Channel | 1.3m Ω @ 100A, 10V | 3.9V @ 150μA | 7437pF @ 25V | 225nC @ 10V | 240A | 240A Tc | 40V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPP15N60C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2005 | CoolMOS™ | Not For New Designs | 1 (Unlimited) | 150°C | -55°C | 10.36mm | ROHS3 Compliant | Lead Free | 15A | 3 | TO-220-3 | 15.95mm | 4.57mm | Through Hole | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | Halogen Free | Single | 156W | 10 ns | 600V | 250mOhm | PG-TO220-3-1 | 156W Tc | 15A | 50 ns | N-Channel | 280mOhm @ 9.4A, 10V | 3.9V @ 675μA | 1660pF @ 25V | 63nC @ 10V | 20V | 650V | 15A Tc | 650V | 1.66nF | 10V | ±20V | 280 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
IPW50R250CPFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | 114W Tc | SWITCHING | 0.25Ohm | 500V | SILICON | N-Channel | 250m Ω @ 7.8A, 10V | 3.5V @ 520μA | 1420pF @ 100V | 36nC @ 10V | 13A | 13A Tc | 500V | 31A | 345 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPB180N06S4H1ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | EAR99 | 10.31mm | ROHS3 Compliant | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | not_compliant | 4.57mm | 9.45mm | Surface Mount | 1.59999g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | 260 | NOT SPECIFIED | R-PSSO-G6 | 1 | 1 | DRAIN | Single | 30 ns | 60V | 250W Tc | 180A | 60 ns | SILICON | N-Channel | 1.7m Ω @ 100A, 10V | 4V @ 200μA | 21900pF @ 25V | 270nC @ 10V | 5ns | 15 ns | 20V | 60V | 180A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPP05CN10NGXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 100A | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 300W | 28 ns | 100V | 300W Tc | 100A | SWITCHING | 0.0054Ohm | 64 ns | SILICON | N-Channel | 5.4m Ω @ 100A, 10V | 4V @ 250μA | 12000pF @ 50V | 181nC @ 10V | 42ns | 21 ns | 20V | 100A Tc | 400A | 826 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
AUIRF3805L | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 11.3mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | FET General Purpose Power | 1 | DRAIN | Single | 300W | 150 ns | 300W Tc | 160A | SWITCHING | 93 ns | SILICON | N-Channel | 3.3m Ω @ 75A, 10V | 4V @ 250μA | 7960pF @ 25V | 290nC @ 10V | 20ns | 87 ns | 20V | 55V | 160A Tc | 890A | 940 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPA60R199CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2007 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 34W | 10 ns | 600V | 34W Tc | 16A | SWITCHING | 50 ns | SILICON | N-Channel | 199m Ω @ 9.9A, 10V | 3.5V @ 1.1mA | 1520pF @ 100V | 43nC @ 10V | 5ns | 20V | 16A Tc | 650V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPB180N04S302ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | ULTRA LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 300W | 40V | 300W Tc | 180A | SILICON | N-Channel | 1.5m Ω @ 80A, 10V | 4V @ 230μA | 14300pF @ 25V | 210nC @ 10V | 20V | 180A Tc | 720A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRLR7843PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2006 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 140W Tc | N-Channel | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 4380pF @ 15V | 50nC @ 4.5V | 161A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRL1404Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.66mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 16.51mm | 4.82mm | 5.9MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 200W | 19 ns | 1.4V | 200W Tc | 160A | SWITCHING | 30 ns | SILICON | N-Channel | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 5080pF @ 25V | 110nC @ 5V | 180ns | 49 ns | 16V | 40V | 160A Tc | 790A | 490 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
IRFS7730TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 21 ns | 375W Tc | 195A | SWITCHING | 0.0026Ohm | 75V | 180 ns | SILICON | N-Channel | 2.6m Ω @ 100A, 10V | 3.7V @ 250μA | 13660pF @ 25V | 407nC @ 10V | 120ns | 115 ns | 20V | 195A Tc | 75V | 984A | 898 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPP100N04S303AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2007 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | No | 3 | ULTRA LOW RESISTANCE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 214W | 30 ns | 40V | 214W Tc | 100A | 0.0028Ohm | 46 ns | SILICON | N-Channel | 2.8m Ω @ 80A, 10V | 4V @ 150μA | 9600pF @ 25V | 145nC @ 10V | 16ns | 17 ns | 20V | 100A Tc | 400A | 898 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPI60R190C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSIP-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 151W Tc | SWITCHING | 0.19Ohm | 600V | SILICON | N-Channel | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 1400pF @ 100V | 63nC @ 10V | 20.2A | 20.2A Tc | 600V | 59A | 418 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IPP034N08N5AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | TO-220-3 | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | TO-220AB | DRAIN | Halogen Free | Single | 18 ns | 80V | 167W Tc | 120A | SWITCHING | 0.0034Ohm | 37 ns | SILICON | N-Channel | 3.4m Ω @ 100A, 10V | 3.8V @ 108μA | 6240pF @ 40V | 87nC @ 10V | 12ns | 12 ns | 20V | 80V | 120A Tc | 480A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPB100N04S204ATMA4 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 300W | 27 ns | 40V | 300W Tc | 100A | 56 ns | SILICON | N-Channel | 3.3m Ω @ 80A, 10V | 4V @ 250μA | 5300pF @ 25V | 172nC @ 10V | 46ns | 33 ns | 20V | 40V | 100A Tc | 400A | 810 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IPA60R190E6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 34W Tc | SWITCHING | 0.19Ohm | 600V | SILICON | N-Channel | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 1400pF @ 100V | 63nC @ 10V | 20.2A Tc | 600V | 59A | 418 mJ | 10V | ±20V |
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