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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | REACH SVHC | Reach Compliance Code | Frequency | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Bandwidth | Sensing Method | Height Seated (Max) | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Output Type | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Number of Channels | Subcategory | Qualification Status | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Termination Style | Number of Elements | Configuration | JEDEC-95 Code | Analog IC - Other Type | Case Connection | Halogen Free | Response Time | Data Rate | Applications | Polarization | Element Configuration | Power Dissipation | Output | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Actuator Type | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Power - Output | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Accuracy | Voltage - Supply | Sensor Type | Current - Sensing | Linearity | Protocol | Output Signal | RF Family/Standard | Serial Interfaces | Modulation | For Measuring | Rotation Angle - Electrical, Mechanical |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TLI4970D025T4XUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Cut Tape (CT) | 2016 | Automotive, AEC-Q100 | yes | Active | 3 (168 Hours) | 8 | 7mm | ROHS3 Compliant | Lead Free | 8 | SEATED HGT-CALCULATED | 8-PowerTDFN | DC~18kHz | 1.05mm | Surface Mount | -40°C~85°C | 12mA | 20mA | 18 kHz | Hall Effect | 1 | DUAL | NO LEAD | NOT SPECIFIED | 3.3V | NOT SPECIFIED | Digital | 1 | 3.5V | 85°C | ANALOG CIRCUIT | Halogen Free | 57μs | Unidirectional | SPI | 125°C | ±2% | 3.1V~3.5V | Hall Effect, Differential | 25A | ±1.6% | AC/DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLI4971A120T5UE0001XUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
16 Weeks | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAB 82526 H V2.2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tray | Obsolete | 3 (168 Hours) | 44-QFP | Serial | Surface Mount | SA*82526 | P-MQFP-44 | 4.75V~5.25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAB 82525 H V2.2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tray | Obsolete | 3 (168 Hours) | 44-QFP | Serial | Surface Mount | SA*82525 | P-MQFP-44 | 4.75V~5.25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAB 82526 N V2.2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | Obsolete | 3 (168 Hours) | 44-LCC (J-Lead) | Serial | Surface Mount | SA*82526 | P-LCC-44-1 | 4.75V~5.25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SLE 66CL80P M8.4 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Bulk | Discontinued | 1 (Unlimited) | Non-RoHS Compliant | M8.4 Chip Card Module | Surface Mount | SLE66CL80 | Controller | M8.4 Chip Card Module | 2.7V~5.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SLE 66CL80P NB | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Bulk | 2012 | Discontinued | 1 (Unlimited) | Non-RoHS Compliant | M8.4 Chip Card Module | Surface Mount | SLE66CL80 | Controller | M8.4 Chip Card Module | 2.7V~5.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAK-CIC751-EOM16T BA | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2006 | Obsolete | 3 (168 Hours) | 38-TFSOP (0.173, 4.40mm Width) | SPI Serial | Surface Mount | SA*CIC751 | Automotive | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAF 82526 N V2.2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | Obsolete | 3 (168 Hours) | 44-LCC (J-Lead) | Serial | Surface Mount | SA*82526 | P-LCC-44-1 | 4.75V~5.25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP051N15N5AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tube | 2013 | OptiMOS™ 5 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 | not_compliant | 20.7mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 300W | 19.6 ns | 500mW Tc | 120A | 175°C | SWITCHING | 25.5 ns | SILICON | N-Channel | 5.1m Ω @ 60A, 10V | 4.6V @ 264μA | 7800pF @ 75V | 100nC @ 10V | 20V | 150V | 150V | 480A | 230 mJ | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP120N20NFDAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-220-3 | not_compliant | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 1 | TO-220AB | DRAIN | Halogen Free | Single | 300W | 13 ns | 200V | 300W Tc | 84A | 24 ns | SILICON | N-Channel | 12m Ω @ 84A, 10V | 4V @ 270μA | 6650pF @ 100V | 87nC @ 10V | 10ns | 8 ns | 20V | 84A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4768PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2009 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | 17.5MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | TO-247AC | DRAIN | Single | 520W | 36 ns | 5V | 520W Tc | 93A | SWITCHING | 57 ns | SILICON | N-Channel | 17.5m Ω @ 56A, 10V | 5V @ 250μA | 10880pF @ 50V | 270nC @ 10V | 160ns | 110 ns | 20V | 250V | 250V | 5 V | 93A Tc | 770 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R045C7FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | 25.4mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 227W | 20 ns | 650V | 227W Tc | 46A | 150°C | SWITCHING | 0.045Ohm | 82 ns | SILICON | N-Channel | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 4340pF @ 400V | 93nC @ 10V | 14ns | 7 ns | 20V | 650V | 46A Tc | 249 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF300P226 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tube | 2017 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 556W Tc | N-Channel | 19m Ω @ 45A, 10V | 4V @ 270μA | 10030pF @ 50V | 191nC @ 10V | 100A | 300V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ65R019C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | TO-247-4 | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T4 | 1 | Halogen Free | Single | 446W | 30 ns | 650V | 446W Tc | 75A | SWITCHING | 106 ns | SILICON | N-Channel | 19m Ω @ 58.3A, 10V | 4V @ 2.92mA | 9900pF @ 400V | 215nC @ 10V | 27ns | 5 ns | 20V | 75A Tc | 496A | 583 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SN7002WH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 1996 | SIPMOS® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | No | 3 | SC-70, SOT-323 | 800μm | 1.25mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | 1 | 1 | Halogen Free | Single | 500mW | 2.4 ns | 60V | 500mW Ta | 230mA | 5Ohm | 6 ns | SILICON | N-Channel | 5 Ω @ 230mA, 10V | 1.8V @ 26μA | 45pF @ 25V | 1.5nC @ 10V | 2.8ns | 8.5 ns | 20V | 60V | 230mA Ta | 4.5 pF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BGM13HBA12E6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BGM17LBA15E6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | ROHS3 Compliant | 703MHz~960MHz | Surface Mount | -40°C~85°C | 54Mbps | -4dBm | 1.7V~3.1V | 802.11a/b/g/n, Bluetooth v4.0 | Bluetooth | SPI, USB | 16QAM, 64QAM, 256QAM, DSSS, FHSS, OFDM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BGM13GBA9E6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | ROHS3 Compliant | 1.452GHz~1.61GHz | Surface Mount | -40°C~85°C | 54Mbps | 1.6V~3.1V | 802.11a/b/g/n, Bluetooth v4.0 | Bluetooth | SPI, USB | 16QAM, 64QAM, 256QAM, DSSS, FHSS, OFDM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE5012BE5000FUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | yes | Not For New Designs | 3 (168 Hours) | 8 | 5V | 5mm | ROHS3 Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | PWM, SPI | 4mm | Surface Mount | -40°C~150°C | Magnetoresistive | 1.75mm | 1 | e3 | Tin (Sn) | NOT SPECIFIED | 5V | NOT SPECIFIED | 8 | 1.27mm | 3V | Gull Wing | ANALOG CIRCUIT | SENT, SPI | External Magnet, Not Included | 3V~5.5V | Cosine, Sine | Angle | 0° ~ 360°, Continuous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE5012BE9000FUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | no | Not For New Designs | 3 (168 Hours) | 8 | 5V | 5mm | ROHS3 Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI | 4mm | Surface Mount | -40°C~150°C | Magnetoresistive | 1.75mm | 1 | e3 | Tin (Sn) | NOT SPECIFIED | 5V | NOT SPECIFIED | 8 | 1.27mm | 3V | Gull Wing | ANALOG CIRCUIT | SENT, SPI | External Magnet, Not Included | 3V~5.5V | Cosine, Sine | Angle | 0° ~ 360°, Continuous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R165CPFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2007 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 192W Tc | SWITCHING | 0.165Ohm | 600V | SILICON | N-Channel | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 2000pF @ 100V | 52nC @ 10V | 21A | 21A Tc | 600V | 61A | 522 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE5009A16DE2200XUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q100 | yes | Active | 3 (168 Hours) | 16 | 5mm | ROHS3 Compliant | 16-TSSOP (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~125°C | Magnetoresistive | 1.2mm | 8542.39.00.01 | 1 | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 0.65mm | R-PDSO-G16 | 4.5V | 5.5V | Gull Wing | ANALOG CIRCUIT | Analog Voltage | External Magnet, Not Included | 4.5V~5.5V | Cosine, Sine | Angle | 0° ~ 360°, Continuous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R1K4CEXKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 800V | 31W Tc | 3.9A | SWITCHING | SILICON | N-Channel | 1.4 Ω @ 2.3A, 10V | 3.9V @ 240μA | 570pF @ 100V | 23nC @ 10V | 3.9A Tc | 12A | 170 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R600P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | 20.7mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 21W | 7 ns | 21W Tc | 6A | 150°C | SWITCHING | 0.6Ohm | 37 ns | SILICON | N-Channel | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 363pF @ 400V | 9nC @ 10V | 20V | 600V | 6A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAW60R280P7SXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 24W Tc | SWITCHING | 0.28Ohm | 600V | SILICON | N-Channel | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 761pF @ 400V | 18nC @ 10V | 12A Tc | 600V | 36A | 38 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA057N06N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 24 ns | 60V | 38W Tc | 60A | SWITCHING | 0.0057Ohm | 32 ns | SILICON | N-Channel | 5.7m Ω @ 60A, 10V | 4V @ 58μA | 6600pF @ 30V | 82nC @ 10V | 68ns | 9 ns | 20V | 60A Tc | 240A | 77 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL7437PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2012 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 1.8MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 230W | 19 ns | 3V | 230W Tc | 195A | SWITCHING | 78 ns | SILICON | N-Channel | 1.8m Ω @ 100A, 10V | 3.9V @ 150μA | 7330pF @ 25V | 225nC @ 10V | 70ns | 53 ns | 20V | 40V | 3 V | 195A Tc | 802 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R380P6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Halogen Free | 12 ns | 600V | 342mOhm | PG-TO220-FP | 31W Tc | 10.6A | 33 ns | N-Channel | 380mOhm @ 3.8A, 10V | 4.5V @ 320μA | 877pF @ 100V | 19nC @ 10V | 6ns | 7 ns | 20V | 10.6A Tc | 600V | 877pF | 10V | ±20V | 380 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB33N15DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2000 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.5156mm | ROHS3 Compliant | Contains Lead, Lead Free | 33A | No | 3 | TO-220-3 | No SVHC | 15.24mm | 4.69mm | 56Ohm | Through Hole | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 3.8W | 13 ns | 5.5V | 3.8W Ta 170W Tc | 33A | SWITCHING | 23 ns | SILICON | N-Channel | 56m Ω @ 20A, 10V | 5.5V @ 250μA | 2020pF @ 25V | 90nC @ 10V | 38ns | 21 ns | 30V | 150V | 150V | 5.5 V | 33A Tc | 10V | ±30V |