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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFR3910PBF IRFR3910PBF Infineon Technologies $0.00
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    		 download 14 Weeks Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 79W Tc SWITCHING 0.115Ohm 100V SILICON N-Channel 115m Ω @ 10A, 10V 4V @ 250μA 640pF @ 25V 44nC @ 10V 16A 16A Tc 100V 60A 150 mJ 10V ±20V
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free 9.4A No 8 AVALANCHE RATED 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 15.5MOhm Surface Mount -55°C~150°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 2.5W 7.6 ns 2V 2.5W Ta 9.4A SWITCHING 20 ns SILICON N-Channel 15.5m Ω @ 9.4A, 10V 2V @ 250μA 2460pF @ 20V 34nC @ 4.5V 2.3ns 3.8 ns 12V 40V 9.4A Ta 75A 4.5V 10V ±12V
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    		 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 48W Tc N-Channel 180m Ω @ 6A, 10V 2V @ 250μA 440pF @ 25V 20nC @ 5V 10A Tc 100V 4V 10V ±16V
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 82W Tc SWITCHING 0.0136Ohm 55V SILICON N-Channel 13.6m Ω @ 31A, 10V 4V @ 250μA 1460pF @ 25V 46nC @ 10V 51A 51A Tc 55V 200A 97 mJ 10V ±20V
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    		 download 15 Weeks Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free Tin 105A No 3 TO-220-3 No SVHC 8.77mm 4.69mm 6MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 110W 14 ns 2.25V 110W Tc 27 ns 105A SWITCHING 18 ns SILICON N-Channel 6m Ω @ 21A, 10V 2.25V @ 250μA 2840pF @ 15V 35nC @ 4.5V 38ns 5 ns 20V 30V 30V 2.25 V 42A 105A Tc 420A 220 mJ 4.5V 10V ±20V
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    		 download Tube 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W Tc SWITCHING 0.006Ohm 30V SILICON N-Channel 6m Ω @ 21A, 10V 2.25V @ 250μA 2840pF @ 15V 35nC @ 4.5V 42A 105A Tc 30V 420A 220 mJ 4.5V 10V ±20V
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    		 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 10.668mm RoHS Compliant Lead Free 87A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 6.3MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 Single 79mW 13 ns 2.25V 6.3mOhm D2PAK 79W Tc 24 ns 87A 16 ns N-Channel 6.3mOhm @ 21A, 10V 2.25V @ 250μA 2130pF @ 15V 26nC @ 4.5V 41ns 4.7 ns 20V 30V 2.25 V 87A Tc 30V 2.13nF 4.5V 10V ±20V 6.3 mΩ
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    		 download 9 Weeks Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 36A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 26.5mOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 92W 15 ns 4V 92W Tc 50 ns 36A SWITCHING 43 ns SILICON N-Channel 26.5m Ω @ 22A, 10V 4V @ 250μA 1770pF @ 25V 63nC @ 10V 51ns 39 ns 20V 100V 100V 4 V 36A Tc 10V ±20V
    IRF6215SPBF IRF6215SPBF Infineon Technologies $0.00
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    		 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 110W Tc SWITCHING 0.29Ohm 150V SILICON P-Channel 290m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 13A 13A Tc 150V 44A 310 mJ 10V ±20V
    IRFZ34NSPBF IRFZ34NSPBF Infineon Technologies $0.00
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    		 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 68W Tc SWITCHING 0.04Ohm 55V SILICON N-Channel 40m Ω @ 16A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 29A 29A Tc 55V 100A 130 mJ 10V ±20V
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free 150A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 5.084mm 9.65mm 3.8MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 Single 140W 18 ns 1.4V 140W Tc 63 ns 150A 175°C 21 ns N-Channel 3.8m Ω @ 38A, 10V 2.3V @ 250μA 4170pF @ 15V 47nC @ 4.5V 50ns 6.9 ns 20V 30V 2.3 V 150A Tc 4.5V 10V ±20V
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    		 Surface Mount Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.67mm ROHS3 Compliant Lead Free 21A No 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 84W 9.6 ns 4V 3.8W Ta 94W Tc 21A SWITCHING 0.082Ohm 49 ns SILICON N-Channel 82m Ω @ 12A, 10V 4V @ 250μA 1300pF @ 25V 95nC @ 10V 32ns 38 ns 20V 150V 150V 4 V 21A Tc 84A 10V ±20V
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    		 download Through Hole Tube 1997 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.67mm RoHS Compliant Lead Free -19A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W 13 ns -4V 3.8W Ta 68W Tc -19A SWITCHING 0.1Ohm 30 ns SILICON P-Channel 100m Ω @ 10A, 10V 4V @ 250μA 620pF @ 25V 35nC @ 10V 55ns 41 ns 20V -55V -4 V 19A Tc 55V 68A 180 mJ 10V ±20V
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    		 download 18 Weeks Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 68W Tc SWITCHING 0.1Ohm 55V SILICON P-Channel 100m Ω @ 10A, 10V 4V @ 250μA 620pF @ 25V 35nC @ 10V 19A 19A Tc 55V 68A 180 mJ 10V ±20V
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    		 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 2 SMD/SMT EAR99 10.67mm RoHS Compliant Lead Free 130A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 6.5MOhm Surface Mount -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 3.1W 16 ns 1V 3.8W Ta 200W Tc 120 ns 130A SWITCHING 25 ns SILICON N-Channel 6.5m Ω @ 78A, 10V 1V @ 250μA 5330pF @ 25V 100nC @ 4.5V 210ns 14 ns 16V 40V 40V 1 V 130A Tc 520A 700 mJ 4.5V 10V ±16V
    IRF1010NSPBF IRF1010NSPBF Infineon Technologies $0.00
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    		 download 16 Weeks Tube 2002 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 180W Tc N-Channel 11m Ω @ 43A, 10V 4V @ 250μA 3210pF @ 25V 120nC @ 10V 85A Tc 55V 10V ±20V
    IRF1310NSPBF IRF1310NSPBF Infineon Technologies $0.00
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    		 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 160W Tc SWITCHING 0.036Ohm 100V SILICON N-Channel 36m Ω @ 22A, 10V 4V @ 250μA 1900pF @ 25V 110nC @ 10V 42A 42A Tc 100V 140A 420 mJ 10V ±20V
    IPP65R150CFDAAKSA1 IPP65R150CFDAAKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 Automotive, AEC-Q101, CoolMOS™ no Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead 3 HIGH RELIABILITY TO-220-3 not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 12.4 ns 650V 195.3W Tc 22.4A SWITCHING 0.15Ohm 52.8 ns SILICON N-Channel 150m Ω @ 9.3A, 10V 4.5V @ 900μA 2340pF @ 100V 86nC @ 10V 7.6ns 5.6 ns 20V 22.4A Tc 72A 614 mJ 10V ±20V
    IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ C7 yes Active 2A (4 Weeks) 4 EAR99 ROHS3 Compliant Contains Lead 4 4-PowerTSFN not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NO LEAD NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 11 ns 650V 128W Tc 21A SWITCHING 0.099Ohm 89 ns SILICON N-Channel 99m Ω @ 5.9A, 10V 4V @ 590μA 2140pF @ 400V 45nC @ 10V 5ns 12 ns 20V 21A Tc 100A 118 mJ 10V ±20V
    SPP20N60CFDXKSA1 SPP20N60CFDXKSA1 Infineon Technologies $0.00
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    		 download 9 Weeks Through Hole Tube 2011 CoolMOS™ Not For New Designs 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 20.7A 3 TO-220-3 Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) Single 208W 12 ns 190mOhm PG-TO220-3-1 208W Tc 20.7A 59 ns N-Channel 220mOhm @ 13.1A, 10V 5V @ 1mA 2400pF @ 25V 124nC @ 10V 15ns 6.4 ns 20V 600V 20.7A Tc 650V 2.4nF 10V ±20V 220 mΩ
    AUIRFS4115-7P AUIRFS4115-7P Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tube 2010 HEXFET® Not For New Designs 1 (Unlimited) EAR99 ROHS3 Compliant 7 TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFS4115 380W Tc 105A N-Channel 11.8m Ω @ 63A, 10V 5V @ 250μA 5320pF @ 50V 110nC @ 10V 105A Tc 150V 10V ±20V
    AUIRLS3036-7TRL AUIRLS3036-7TRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G6 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-263CB DRAIN 380W Tc SWITCHING 0.0019Ohm 60V SILICON N-Channel 1.9m Ω @ 180A, 10V 2.5V @ 250μA 11270pF @ 50V 160nC @ 4.5V 240A 240A Tc 60V 1000A 300 mJ 4.5V 10V ±16V
    IPW65R190CFDAFKSA1 IPW65R190CFDAFKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2012 Automotive, AEC-Q101, CoolMOS™ yes Last Time Buy 1 (Unlimited) 3 16.03mm ROHS3 Compliant Lead Free 3 HIGH RELIABILITY TO-247-3 21.1mm 5.16mm Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power 1 Single 12 ns 650V 151W Tc 17.5A SWITCHING 0.19Ohm 53.2 ns SILICON N-Channel 190m Ω @ 7.3A, 10V 4.5V @ 700μA 1850pF @ 100V 68nC @ 10V 30V 17.5A Tc 57.2A 484 mJ 10V ±20V
    SPP24N60C3XKSA1 SPP24N60C3XKSA1 Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2005 CoolMOS™ Not For New Designs 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 24.3A 3 TO-220-3 Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) 1 Halogen Free 240W 13 ns 600V 140mOhm TO-220-3 240W Tc 24.3A 140 ns N-Channel 160mOhm @ 15.4A, 10V 3.9V @ 1.2mA 3000pF @ 25V 135nC @ 10V 21ns 14 ns 20V 650V 24.3A Tc 650V 3nF 10V ±20V 160 mΩ
    IRF7457PBF IRF7457PBF Infineon Technologies $0.00
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant ULTRA-LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.007Ohm 20V SILICON N-Channel 7m Ω @ 15A, 10V 3V @ 250μA 3100pF @ 10V 42nC @ 4.5V 15A 15A Ta 20V 120A 265 mJ 4.5V 10V ±20V
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~155°C TJ MOSFET (Metal Oxide) 2.5W Ta N-Channel 9.1m Ω @ 13A, 10V 1V @ 250μA 1010pF @ 15V 14nC @ 4.5V 13.6A Ta 30V 4.5V 10V ±20V
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    		 download Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 5mm ROHS3 Compliant Lead Free 16A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 4mm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 Single 2.5W 11 ns 2.25V 2.5W Ta 16A SWITCHING 14 ns SILICON N-Channel 6.8m Ω @ 16A, 10V 2.25V @ 250μA 2080pF @ 15V 27nC @ 4.5V 10ns 3.7 ns 20V 30V 16A Ta 4.5V 10V ±20V
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.014Ohm 30V SILICON N-Channel 14m Ω @ 15A, 4.5V 3V @ 250μA 1801pF @ 10V 26nC @ 5V 10.8A 10.8A Ta 30V 100A 4.5V ±20V
    IRF9410PBF IRF9410PBF Infineon Technologies $0.00
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    		 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.03Ohm 30V SILICON N-Channel 30m Ω @ 7A, 10V 1V @ 250μA 550pF @ 25V 27nC @ 10V 7A 7A Ta 30V 37A 70 mJ 4.5V 10V ±20V
    IRFR2405PBF IRFR2405PBF Infineon Technologies $0.00
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    		 download 52 Weeks Surface Mount Tube 2000 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 56A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) 1 Single 110W 15 ns 4V 110W Tc 93 ns 56A 55 ns N-Channel 16m Ω @ 34A, 10V 4V @ 250μA 2430pF @ 25V 110nC @ 10V 130ns 78 ns 20V 55V 55V 4 V 56A Tc 10V ±20V