Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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BSZ160N10NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | DUAL | NO LEAD | 8 | YES | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.1W Ta 63W Tc | SWITCHING | 0.016Ohm | 100V | SILICON | N-Channel | 16m Ω @ 20A, 10V | 3.5V @ 12μA | 1700pF @ 50V | 25nC @ 10V | 40A | 8A Ta 40A Tc | 100V | 160A | 80 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRFR3504ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 42A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.26mm | 6.22mm | 9MOhm | Surface Mount | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 42A | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 40V | 1 | TO-252AA | DRAIN | Single | 90W | 15 ns | 90W Tc | 77A | SWITCHING | 30 ns | SILICON | N-Channel | 9m Ω @ 42A, 10V | 4V @ 250μA | 1510pF @ 25V | 45nC @ 10V | 74ns | 38 ns | 20V | 40V | 42A Tc | 77 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
IPD90N04S404ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 10 ns | 40V | 71W Tc | 90A | 0.0041Ohm | 9 ns | SILICON | N-Channel | 4.1m Ω @ 90A, 10V | 4V @ 35.2mA | 3440pF @ 25V | 43nC @ 10V | 11ns | 20V | 90A Tc | 95 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
BSZ067N06LS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 60V | 2.1W Ta 69W Tc | 14A | SWITCHING | SILICON | N-Channel | 6.7m Ω @ 20A, 10V | 2.2V @ 35μA | 5100pF @ 30V | 67nC @ 10V | 26ns | 20V | 14A Ta 20A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
BSZ123N08NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 66W | 12 ns | 80V | 2.1W Ta 66W Tc | 10A | SWITCHING | 19 ns | SILICON | N-Channel | 12.3m Ω @ 20A, 10V | 3.5V @ 33μA | 1700pF @ 40V | 25nC @ 10V | 18ns | 4 ns | 20V | 10A Ta 40A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFR3806TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 15.8MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | Single | 71W | 6.3 ns | 71W Tc | 43mA | SWITCHING | 49 ns | SILICON | N-Channel | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 1150pF @ 50V | 30nC @ 10V | 40ns | 47 ns | 20V | 60V | 2 V | 43A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
BSS131H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | SIPMOS® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.1mm | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 3 | 1 | 240V | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 360mW | 3.3 ns | 1.4V | 240V | 360mW Ta | 100mA | 150°C | 13.7 ns | SILICON | N-Channel | 14 Ω @ 100mA, 10V | 1.8V @ 56μA | 77pF @ 25V | 3.1nC @ 10V | 3.1ns | 20V | 240V | 240V | 1.4 V | 110mA Ta | 4.2 pF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFR1205TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 37A | No | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.8mm | 27mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 69W | 7.3 ns | 4V | 107W Tc | 98 ns | 37A | SWITCHING | 47 ns | SILICON | N-Channel | 27m Ω @ 26A, 10V | 4V @ 250μA | 1300pF @ 25V | 65nC @ 10V | 69ns | 60 ns | 20V | 55V | 55V | 4 V | 20A | 44A Tc | 10V | ±20V | |||||||||||||||||||||||||||||
BSS139H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | SIPMOS® | yes | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | DUAL | GULL WING | 3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 360mW | -1.4V | 250V | 360mW Ta | 40mA | SILICON | N-Channel | 14 Ω @ 100μA, 10V | 1V @ 56μA | 76pF @ 25V | 3.5nC @ 5V | 5.4ns | 20V | 250V | Depletion Mode | -1.4 V | 100mA Ta | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
BSC031N06NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 38 ns | 60V | 2.5W Ta 139W Tc | 100A | SWITCHING | 63 ns | SILICON | N-Channel | 3.1m Ω @ 50A, 10V | 4V @ 93μA | 11000pF @ 30V | 130nC @ 10V | 161ns | 16 ns | 20V | 22A | 100A Tc | 400A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPD90P03P4L04ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2008 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 137W Tc | SWITCHING | 0.0068Ohm | 30V | SILICON | P-Channel | 4.1m Ω @ 90A, 10V | 2V @ 253μA | 11300pF @ 25V | 160nC @ 10V | 90A | 90A Tc | 30V | 360A | 370 mJ | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH7084TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 16 ns | 3.9V | 156W Tc | 100A | 64 ns | N-Channel | 1.25m Ω @ 100A, 10V | 3.9V @ 150μA | 6560pF @ 25V | 190nC @ 10V | 31ns | 34 ns | 20V | 100A Tc | 40V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD90P04P4L04ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Cut Tape (CT) | 2003 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.35mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 20 ns | -1.7V | -40V | 125W Tc | -90A | 175°C | 140 ns | SILICON | P-Channel | 4.3m Ω @ 90A, 10V | 2.2V @ 250μA | 11570pF @ 25V | 176nC @ 10V | 60 ns | 16V | -40V | 90A Tc | 40V | 60 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
IRLR2703TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 23A | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 45mOhm | Surface Mount | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 38W | 8.5 ns | 45W Tc | 23A | SWITCHING | 12 ns | SILICON | N-Channel | 45m Ω @ 14A, 10V | 1V @ 250μA | 450pF @ 25V | 15nC @ 4.5V | 140ns | 20 ns | 16V | 30V | 1 V | 23A Tc | 96A | 77 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||
IRLL2705TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Lead Free | 3.8A | No | 3 | LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | No SVHC | 1.8mm | 6.7mm | 40mOhm | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | R-PDSO-G4 | 1 | 1 | DRAIN | Single | 2.1W | 6.2 ns | 2V | 1W Ta | 88 ns | 3.8A | 150°C | 35 ns | SILICON | N-Channel | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 870pF @ 25V | 48nC @ 10V | 12ns | 22 ns | 16V | 55V | 55V | 2 V | 5.2A | 3.8A Ta | 4V 10V | ±16V | ||||||||||||||||||||||||||||||
IRLR3410TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 17A | No | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 105mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 79W | 7.2 ns | 2V | 79W Tc | 210 ns | 17A | 175°C | SWITCHING | 30 ns | SILICON | N-Channel | 105m Ω @ 10A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 53ns | 26 ns | 16V | 100V | 100V | 2 V | 17A Tc | 60A | 4V 10V | ±16V | ||||||||||||||||||||||||||||
BSC035N04LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 69W | 7.9 ns | 40V | 2.5W Ta 69W Tc | 21A | SWITCHING | 0.0053Ohm | 31 ns | SILICON | N-Channel | 3.5m Ω @ 50A, 10V | 2V @ 36μA | 5100pF @ 20V | 64nC @ 10V | 4.6ns | 5 ns | 20V | 21A Ta 100A Tc | 400A | 65 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRLML0030TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | No | 3 | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.397mm | 27MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | 1 | Single | 1.3W | 5.2 ns | 1.7V | 1.3W Ta | 17 ns | 5.3A | 150°C | SWITCHING | 7.4 ns | SILICON | N-Channel | 27m Ω @ 5.2A, 10V | 2.3V @ 25μA | 382pF @ 15V | 2.6nC @ 4.5V | 4.4ns | 4.4 ns | 20V | 30V | 1.7 V | 5.3A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
BSS84PH6433XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2002 | SIPMOS® | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Tin | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 1 | Other Transistors | 1 | Single | 360mW | 6.7 ns | 360mW Ta | -170mA | 150°C | SWITCHING | 8Ohm | 8.6 ns | SILICON | P-Channel | 8 Ω @ 170mA, 10V | 2V @ 20μA | 19pF @ 25V | 1.5nC @ 10V | 16.2ns | 20.5 ns | 20V | -60V | 170mA Ta | 60V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
BSS138NH6433XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | SIPMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | Tin | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | 1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.21.00.95 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 2.3 ns | 360mW Ta | 230mA | 60V | 6.7 ns | SILICON | N-Channel | 3.5 Ω @ 230mA, 10V | 1.4V @ 26μA | 41pF @ 25V | 1.4nC @ 10V | 3ns | 20V | 230mA Ta | 60V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
2N7002H6327XTSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | 115mA | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | Not Qualified | 1 | Halogen Free | Single | 200mW | 3 ns | 2.1V | 60V | 500mW Ta | 300mA | 150°C | SWITCHING | 3Ohm | 5.5 ns | SILICON | N-Channel | 3 Ω @ 500mA, 10V | 2.5V @ 250μA | 20pF @ 25V | 0.6nC @ 10V | 3.3ns | 20V | 60V | 300mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
BSS138WH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2002 | SIPMOS® | Active | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | SC-70, SOT-323 | 1mm | 1.25mm | Surface Mount | 124.596154mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2A | e3 | DUAL | GULL WING | 1 | 50V | 1 | Halogen Free | Single | 500mW | 2.2 ns | 1V | 60V | 500mW Ta | 280mA | 6.7 ns | SILICON | N-Channel | 3.5 Ω @ 200mA, 10V | 1.4V @ 26μA | 43pF @ 25V | 1.5nC @ 10V | 3ns | 8.2 ns | 20V | 60V | 280mA Ta | 4.2 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
BSS84PWH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2000 | SIPMOS® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | Tin | -150mA | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | SC-70, SOT-323 | 1mm | 1.25mm | Surface Mount | -55°C~150°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 3 | 1 | 1 | Halogen Free | Single | 300mW | 6.7 ns | -60V | 300mW Ta | -150mA | 150°C | 8Ohm | 8.6 ns | SILICON | P-Channel | 8 Ω @ 150mA, 10V | 2V @ 20μA | 19.1pF @ 25V | 1.5nC @ 10V | 16.2ns | 20.5 ns | 20V | -60V | 150mA Ta | 60V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
BSS209PWH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | -580mA | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | SC-70, SOT-323 | 800μm | 1.25mm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | 3 | 1 | Halogen Free | Single | 300mW | 26 ns | -20V | 300mW Ta | 580mA | 0.55Ohm | 6 ns | SILICON | P-Channel | 550m Ω @ 630mA, 4.5V | 1.2V @ 3.5μA | 115pF @ 15V | 1.3nC @ 4.5V | 7ns | 4.6 ns | 12V | 630mA Tc | 20V | 45 pF | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
IRFR7546TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | TO-252AA | DRAIN | Single | 8.1 ns | 3.7V | 99W Tc | 56A | SWITCHING | 0.0079Ohm | 60V | 36 ns | SILICON | N-Channel | 7.9m Ω @ 43A, 10V | 3.7V @ 100μA | 3020pF @ 25V | 87nC @ 10V | 28ns | 20 ns | 20V | 56A Tc | 60V | 280A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPB600N25N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 136W | 10 ns | 250V | 136W Tc | 25A | SWITCHING | 0.06Ohm | 22 ns | SILICON | N-Channel | 60m Ω @ 25A, 10V | 4V @ 90μA | 2350pF @ 100V | 29nC @ 10V | 8 ns | 20V | 25A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRLI530NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.6172mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 11A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-220-3 Full Pack | No SVHC | 16.12mm | 4.826mm | 120mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 33W | 7.2 ns | 2V | 41W Tc | 210 ns | 12A | SWITCHING | 2kV | 30 ns | SILICON | N-Channel | 100m Ω @ 9A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 53ns | 26 ns | 16V | 100V | 100V | 2 V | 12A Tc | 60A | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||
SPP18P06PHXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2006 | SIPMOS® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 81.1W | 12 ns | -60V | 81.1W Ta | 18.7A | 25 ns | SILICON | P-Channel | 130m Ω @ 13.2A, 10V | 4V @ 1mA | 860pF @ 25V | 28nC @ 10V | 5.8ns | 11 ns | 20V | 18.7A Ta | 60V | 74.8A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRF1010EPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2001 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | 84A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-220-3 | No SVHC | 2.54mm | 16.51mm | 4.826mm | 12mOhm | Through Hole | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 170W | 12 ns | 4V | 200W Tc | 84A | SWITCHING | 48 ns | SILICON | N-Channel | 12m Ω @ 50A, 10V | 4V @ 250μA | 3210pF @ 25V | 130nC @ 10V | 78ns | 53 ns | 20V | 60V | 60V | 4 V | 75A | 84A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRF6215PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 1998 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | Tin | -13A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 2.54mm | 15.24mm | 4.69mm | 290mOhm | Through Hole | -55°C~175°C TJ | -150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Other Transistors | 1 | TO-220AB | DRAIN | Single | 110W | 14 ns | -4V | 110W Tc | 240 ns | -13A | SWITCHING | 53 ns | SILICON | P-Channel | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 860pF @ 25V | 66nC @ 10V | 36ns | 37 ns | 20V | -150V | -150V | -4 V | 13A Tc | 150V | 44A | 10V | ±20V |
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