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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Switching Current Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRLIZ44NPBF IRLIZ44NPBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Contains Lead, Lead Free 30A 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 25mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB ISOLATED Single 38W 11 ns 2V 45W Tc 120 ns 30A SWITCHING 2kV 26 ns SILICON N-Channel 22m Ω @ 17A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 84ns 15 ns 16V 55V 55V 2 V 28A 30A Tc 4V 10V ±16V
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    		 download 14 Weeks Through Hole Tube 2001 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free Tin 116A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 7MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 130W 11 ns 1V 180W Tc 84 ns 116A SWITCHING 23 ns SILICON N-Channel 7m Ω @ 60A, 10V 1V @ 250μA 3290pF @ 25V 60nC @ 4.5V 160ns 66 ns 16V 30V 30V 1 V 75A 116A Tc 400A 290 mJ 4.5V 10V ±16V
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.017mm 4.826mm 6.5mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 170W 18 ns 4V 170W Tc 42 ns 75A SWITCHING 45 ns SILICON N-Channel 6.5m Ω @ 66A, 10V 4V @ 250μA 3450pF @ 25V 110nC @ 10V 95ns 67 ns 20V 55V 55V 4 V 75A Tc 440A 250 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 33A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm 44MOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 130W 11 ns 4V 130W Tc 33A SWITCHING 39 ns SILICON N-Channel 44m Ω @ 16A, 10V 4V @ 250μA 1960pF @ 25V 71nC @ 10V 35ns 35 ns 20V 100V 4 V 33A Tc 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 19.8mm 4.82mm 9MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 1 FET General Purpose Power 1 TO-220AB DRAIN Single 230W 16 ns 2V 230W Tc 57 ns 96A 175°C SWITCHING 43 ns SILICON N-Channel 9m Ω @ 58A, 10V 4V @ 150μA 4820pF @ 50V 120nC @ 10V 52ns 57 ns 20V 100V 100V 4 V 97A 97A Tc 242 mJ 10V ±20V
    IRL3803VPBF IRL3803VPBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6426mm ROHS3 Compliant Lead Free 140A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 200W 16 ns 1V 200W Tc 140A SWITCHING 0.0055Ohm 29 ns SILICON N-Channel 5.5m Ω @ 71A, 10V 1V @ 250μA 3720pF @ 25V 76nC @ 4.5V 180ns 37 ns 16V 30V 75A 140A Tc 470A 400 mJ 4.5V 10V ±16V
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    		 download 15 Weeks Surface Mount Tube 2003 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 57A 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.572mm 9.65mm 12mOhm Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 92W 14 ns 4V 92W Tc 57A SWITCHING 35 ns SILICON N-Channel 12m Ω @ 34A, 10V 4V @ 250μA 1690pF @ 25V 65nC @ 10V 62ns 38 ns 20V 60V 60V 4 V 57A Tc 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 Single 245W 23 ns 245W Tc 240A 107 ns N-Channel 1m Ω @ 100A, 10V 3.9V @ 250μA 10250pF @ 25V 315nC @ 10V 125ns 85 ns 20V 240A Tc 40V 6V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm 2.5MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 375W 16 ns 375W Tc 195A SWITCHING 118 ns SILICON N-Channel 2.5m Ω @ 170A, 10V 4V @ 250μA 8970pF @ 50V 300nC @ 10V 182ns 189 ns 20V 60V 270A 195A Tc 10V ±20V
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    		 download 26 Weeks Surface Mount Tube 2006 HEXFET® Active 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 65MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 Other Transistors 1 TO-252AA DRAIN Single 110W 14 ns -2V 110W Tc 31A SWITCHING 39 ns SILICON P-Channel 65m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 66ns 63 ns 20V -55V 31A Tc 55V 280 mJ 10V ±20V
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Not For New Designs 1 (Unlimited) 9 EAR99 9.144mm ROHS3 Compliant No 11 DirectFET™ Isometric L8 No SVHC 676μm 7.112mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER BOTTOM 260 30 R-XBCC-N9 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.3W 44 ns 3.3W Ta 125W Tc 112 ns 20A 175°C SWITCHING 0.0035Ohm 92 ns SILICON N-Channel 3.5m Ω @ 74A, 10V 4V @ 250μA 11560pF @ 25V 300nC @ 10V 32ns 41 ns 20V 100V 2.7 V 395A 375A Tc 500A 260 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free 34A No 3 TO-220-3 Full Pack No SVHC 9.8mm 4.826mm Through Hole -55°C~150°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 260 40 FET General Purpose Power 1 TO-220AB Single 46W 18 ns 5V 46W Tc 34A SWITCHING 27 ns SILICON N-Channel 16m Ω @ 20A, 10V 5V @ 250μA 4440pF @ 50V 110nC @ 10V 29ns 20 ns 30V 150V 34A Tc 10V ±30V
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    		 download 6 Weeks Surface Mount Cut Tape (CT) 2012 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 208W 70 ns 900V 208W Tc 15A SWITCHING 0.34Ohm 400 ns SILICON N-Channel 340m Ω @ 9.2A, 10V 3.5V @ 1mA 2400pF @ 100V 94nC @ 10V 20ns 25 ns 20V 15A Tc 34A 678 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 214W 27 ns 100V 214W Tc 100A SWITCHING 0.0045Ohm 48 ns SILICON N-Channel 4.5m Ω @ 100A, 10V 3.5V @ 150μA 8410pF @ 50V 117nC @ 10V 59ns 14 ns 20V 100A Tc 400A 6V 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free Tin 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 151W 12 ns 650V 151W Tc 17.5A SWITCHING 53.2 ns SILICON N-Channel 190m Ω @ 7.3A, 10V 4.5V @ 730μA 1850pF @ 100V 68nC @ 10V 8.4ns 6.4 ns 20V 17.5A Tc 57.2A 484 mJ 10V ±20V
    IPP120P04P4L03AKSA1 IPP120P04P4L03AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2011 Automotive, AEC-Q101, OptiMOS™ Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 21 ns -40V 136W Tc 120A 0.0052Ohm 85 ns SILICON P-Channel 3.4m Ω @ 100A, 10V 2.2V @ 340μA 15000pF @ 25V 234nC @ 10V 16ns 57 ns 16V 120A Tc 40V 480A 78 mJ 4.5V 10V ±16V
    IPW65R190CFDFKSA1 IPW65R190CFDFKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 151W Tc SWITCHING 0.19Ohm 650V SILICON N-Channel 190m Ω @ 7.3A, 10V 4.5V @ 730μA 1850pF @ 100V 68nC @ 10V 17.5A 17.5A Tc 650V 57.2A 484 mJ 10V ±20V
    IPD65R380C6BTMA1 IPD65R380C6BTMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Tape & Reel (TR) 2008 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc SWITCHING 0.38Ohm 650V SILICON N-Channel 380m Ω @ 3.2A, 10V 3.5V @ 320μA 710pF @ 100V 39nC @ 10V 10.6A 10.6A Tc 650V 29A 215 mJ 10V ±20V
    BSC080P03LSGAUMA1 BSC080P03LSGAUMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ no Not For New Designs 3 (168 Hours) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerVDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W -30V 2.5W Ta 89W Tc 16A SWITCHING SILICON P-Channel 8m Ω @ 30A, 10V 2.2V @ 250μA 6140pF @ 15V 122.4nC @ 10V 87ns 25V 16A Ta 30A Tc 30V 10V ±25V
    IRF630NPBF IRF630NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Contains Lead, Lead Free 9.3A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 8.77mm 4.69mm 300mOhm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 82W 7.9 ns 4V 82W Tc 176 ns 9.3A SWITCHING 27 ns SILICON N-Channel 300m Ω @ 5.4A, 10V 4V @ 250μA 575pF @ 25V 35nC @ 10V 14ns 15 ns 20V 200V 200V 4 V 9.3A Tc 94 mJ 10V ±20V
    BSP315PH6327XTSA1 BSP315PH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 1999 SIPMOS® yes Active 1 (Unlimited) 4 SMD/SMT EAR99 6.5mm ROHS3 Compliant Lead Free Tin No 4 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-261-4, TO-261AA No SVHC 1.8mm 6.7mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE PG-SOT223-4 e3 DUAL GULL WING 260 40 4 1 Other Transistors 1 DRAIN Halogen Free Single 1.8W 24 ns -1.5V -60V 1.8W Ta 46 ns 1.17A 150°C 0.8Ohm 32 ns SILICON P-Channel 800m Ω @ 1.17A, 10V 2V @ 160μA 160pF @ 25V 7.8nC @ 10V 9ns 19 ns 20V -60V -60V -1.5 V 1.17A Ta 60V 4.5V 10V ±20V
    IPD50N04S4L08ATMA1 IPD50N04S4L08ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 4 ns 40V 46W Tc 50A 11 ns SILICON N-Channel 7.3m Ω @ 50A, 10V 2.2V @ 17μA 2340pF @ 25V 30nC @ 10V 8ns 18 ns 20V 50A Tc 200A 55 mJ 4.5V 10V +20V, -16V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 56A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm 9.5MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 50W 8 ns 1.8V 50W Tc 56A SWITCHING 12 ns SILICON N-Channel 9.5m Ω @ 15A, 10V 2.25V @ 25μA 1150pF @ 15V 14nC @ 4.5V 11ns 3.3 ns 20V 30V 30V 1.8 V 56A Tc 220A 42 mJ 4.5V 10V ±20V
    IRLR9343TRPBF IRLR9343TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm 93MOhm Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 79W 9.5 ns 79W Tc -20A AMPLIFIER 21 ns SILICON P-Channel 105m Ω @ 3.4A, 10V 1V @ 250μA 660pF @ 50V 47nC @ 10V 24ns 9.5 ns 20V -55V 20A Tc 55V 60A 4.5V 10V ±20V
    IRFR220NTRPBF IRFR220NTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free Tin 5A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 600MOhm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252AA DRAIN Single 43W 6.4 ns 4V 43W Tc 140 ns 5A 5A 175°C SWITCHING 20 ns SILICON N-Channel 600m Ω @ 2.9A, 10V 4V @ 250μA 300pF @ 25V 23nC @ 10V 11ns 12 ns 20V 200V 200V 4 V 5A 5A Tc 20A 46 mJ 10V ±20V
    IRF7465TRPBF IRF7465TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) 8 SMD/SMT EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free Tin 1.9A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 280mOhm Surface Mount -55°C~150°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 Single 2.5W 7 ns 5.5V 2.5W Ta 1.9A SWITCHING 10 ns SILICON N-Channel 280m Ω @ 1.14A, 10V 5.5V @ 250μA 330pF @ 25V 15nC @ 10V 1.2ns 9 ns 30V 150V 150V 5.5 V 1.9A Ta 10V ±30V
    IPZ40N04S58R4ATMA1 IPZ40N04S58R4ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED R-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 34W Tc 40A 0.0099Ohm SILICON N-Channel 8.4m Ω @ 20A, 10V 3.4V @ 10μA 771pF @ 25V 13.7nC @ 10V 40A Tc 160A 24 mJ 7V 10V ±20V
    IRFR2905ZTRPBF IRFR2905ZTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 42A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 14.5MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 14 ns 4V 110W Tc 59A 175°C SWITCHING 31 ns SILICON N-Channel 14.5m Ω @ 36A, 10V 4V @ 250μA 1380pF @ 25V 44nC @ 10V 66ns 35 ns 20V 55V 4 V 42A Tc 240A 82 mJ 10V ±20V
    IPD35N10S3L26ATMA1 IPD35N10S3L26ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2011 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 71W Tc 0.0319Ohm 100V SILICON N-Channel 24m Ω @ 35A, 10V 2.4V @ 39μA 2700pF @ 25V 39nC @ 10V 35A 35A Tc 100V 140A 175 mJ 4.5V 10V ±20V
    IRFR7446TRPBF IRFR7446TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252AA DRAIN Single 9.8 ns 3V 98W Tc 56A SWITCHING 40V 32 ns SILICON N-Channel 3.9m Ω @ 56A, 10V 3.9V @ 100μA 3150pF @ 25V 130nC @ 10V 13ns 20 ns 20V 56A Tc 40V 520A 6V 10V ±20V