Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IPD031N06L3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 167W | 25 ns | 60V | 167W Tc | 100A | SWITCHING | 64 ns | SILICON | N-Channel | 3.1m Ω @ 100A, 10V | 2.2V @ 93μA | 13000pF @ 30V | 79nC @ 4.5V | 78ns | 13 ns | 20V | 100A Tc | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRF6678 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Obsolete | 3 (168 Hours) | 3 | EAR99 | Non-RoHS Compliant | Lead Free | 30A | 7 | DirectFET™ Isometric MX | Surface Mount | -40°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | NO LEAD | 260 | 40 | R-XBCC-N3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 2.8W Ta 89W Tc | 24A | SWITCHING | 0.0022Ohm | 27 ns | SILICON | N-Channel | 2.2m Ω @ 30A, 10V | 2.25V @ 250μA | 5640pF @ 15V | 65nC @ 4.5V | 71ns | 8.1 ns | 20V | 30V | 30A Ta 150A Tc | 240A | 210 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRF6716MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | No | 5 | DirectFET™ Isometric MX | No SVHC | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 78W | 26 ns | 1.9V | 3.6W Ta 78W Tc | 39A | SWITCHING | 0.0016Ohm | 25 ns | SILICON | N-Channel | 1.6m Ω @ 40A, 10V | 2.4V @ 100μA | 5150pF @ 13V | 59nC @ 4.5V | 105ns | 41 ns | 20V | 25V | 180A | 39A Ta 180A Tc | 320A | 330 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRF6619TR1PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | 6.35mm | RoHS Compliant | Lead Free | 30A | No | 5 | DirectFET™ Isometric MX | No SVHC | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | 20V | MOSFET (Metal Oxide) | 1 | 89W | 21 ns | 1.55V | 3mOhm | DIRECTFET™ MX | 2.8W Ta 89W Tc | 24A | 25 ns | N-Channel | 2.2mOhm @ 30A, 10V | 2.45V @ 250μA | 5040pF @ 10V | 57nC @ 4.5V | 71ns | 9.3 ns | 20V | 20V | 20V | 1.55 V | 30A Ta 150A Tc | 20V | 5.04nF | 4.5V 10V | ±20V | 2.2 mΩ | |||||||||||||||||||||||||||||||||||||||||||
IPB160N04S3H2ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | ULTRA LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 214W | 30 ns | 40V | 214W Tc | 160A | 46 ns | SILICON | N-Channel | 2.1m Ω @ 80A, 10V | 4V @ 150μA | 9600pF @ 25V | 145nC @ 10V | 16ns | 17 ns | 20V | 160A Tc | 640A | 898 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRFU2405PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2000 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 56A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-251-3 Short Leads, IPak, TO-251AA | 6.22mm | 2.3876mm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 110W | 15 ns | 110W Tc | 56A | SWITCHING | 0.016Ohm | 55 ns | SILICON | N-Channel | 16m Ω @ 34A, 10V | 4V @ 250μA | 2430pF @ 25V | 110nC @ 10V | 130ns | 78 ns | 20V | 55V | 56A Tc | 220A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRFS3607TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 140W | 16 ns | 140W Tc | 80A | SWITCHING | 0.009Ohm | 43 ns | SILICON | N-Channel | 9m Ω @ 46A, 10V | 4V @ 100μA | 3070pF @ 50V | 84nC @ 10V | 110ns | 96 ns | 20V | 75V | 80A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
BSC026N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Tin | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 2.1mOhm | PG-TDSON-8-6 | 2.5W Ta 63W Tc | 100A | N-Channel | 2.6mOhm @ 50A, 10V | 2V @ 250μA | 2300pF @ 20V | 32nC @ 10V | 4ns | 20V | 23A Ta 100A Tc | 40V | 2.3nF | 4.5V 10V | ±20V | 2.6 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC018NE2LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 25V | 2.5W Ta 69W Tc | 29A | SWITCHING | 0.0024Ohm | SILICON | N-Channel | 1.8m Ω @ 30A, 10V | 2V @ 250μA | 2500pF @ 12V | 36nC @ 10V | 4.8ns | 20V | 29A Ta 100A Tc | 400A | 45 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
BSC019N04NSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 40V | 2.5W Ta 125W Tc | 29A | SWITCHING | SILICON | N-Channel | 1.9m Ω @ 50A, 10V | 4V @ 85μA | 8800pF @ 20V | 108nC @ 10V | 5.6ns | 20V | 30A Ta 100A Tc | 400A | 295 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRLR3915TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 61A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.26mm | 6.22mm | 14mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 120W | 7.4 ns | 3V | 120W Tc | 30A | SWITCHING | 26 ns | SILICON | N-Channel | 14m Ω @ 30A, 10V | 3V @ 250μA | 1870pF @ 25V | 92nC @ 10V | 51ns | 100 ns | 16V | 55V | 55V | 3 V | 30A Tc | 240A | 200 mJ | 5V 10V | ±16V | |||||||||||||||||||||||||||||||
IRF7456TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | 16A | No | 8 | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 6.5mOhm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | Single | 2.5W | 20 ns | 2V | 2.5W Ta | 72 ns | 16A | SWITCHING | 50 ns | SILICON | N-Channel | 6.5m Ω @ 16A, 10V | 2V @ 250μA | 3640pF @ 15V | 62nC @ 5V | 25ns | 52 ns | 12V | 20V | 20V | 2 V | 16A Ta | 250 mJ | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||
IPD530N15N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 150V | 68W Tc | 21A | SWITCHING | SILICON | N-Channel | 53m Ω @ 18A, 10V | 4V @ 35μA | 887pF @ 75V | 12nC @ 10V | 21A Tc | 84A | 60 mJ | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
BSC020N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | no | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 96W | 30V | 2.5W Ta 96W Tc | 25A | SWITCHING | 0.0025Ohm | SILICON | N-Channel | 2m Ω @ 30A, 10V | 2V @ 250μA | 9600pF @ 15V | 124nC @ 10V | 14ns | 16V | 25A Ta 100A Tc | 400A | 200 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRF3205STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 110A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 5.084mm | 10.54mm | 8MOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252 | DRAIN | Single | 200W | 14 ns | 4V | 200W Tc | 104 ns | 110A | 175°C | SWITCHING | 50 ns | SILICON | N-Channel | 8m Ω @ 62A, 10V | 4V @ 250μA | 3247pF @ 25V | 146nC @ 10V | 101ns | 65 ns | 20V | 55V | 55V | 4 V | 75A | 110A Tc | 264 mJ | 10V | ±20V | |||||||||||||||||||||||||||
BSC026N02KSGAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 3 (168 Hours) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 78W | 21 ns | 20V | 2.8W Ta 78W Tc | 25A | SWITCHING | 0.0045Ohm | 52 ns | SILICON | N-Channel | 2.6m Ω @ 50A, 4.5V | 1.2V @ 200μA | 7800pF @ 10V | 52.7nC @ 4.5V | 115ns | 9 ns | 12V | 25A Ta 100A Tc | 200A | 550 mJ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
IPD70N10S3L12ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | FET General Purpose Power | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 12 ns | 100V | 125W Tc | 70A | 0.0152Ohm | 35 ns | SILICON | N-Channel | 11.5m Ω @ 70A, 10V | 2.4V @ 83μA | 5550pF @ 25V | 77nC @ 10V | 6ns | 7 ns | 16V | 70A Tc | 280A | 410 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRFR4620TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.3886mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.52mm | 6.73mm | 78MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 144W | 13.4 ns | 144W Tc | 24A | 175°C | SWITCHING | 25.4 ns | SILICON | N-Channel | 78m Ω @ 15A, 10V | 5V @ 100μA | 1710pF @ 50V | 38nC @ 10V | 22.4ns | 14.8 ns | 20V | 200V | 24A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPB60R360P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | 41W Tc | SWITCHING | 0.36Ohm | 600V | SILICON | N-Channel | 360m Ω @ 2.7A, 10V | 4V @ 140μA | 555pF @ 400V | 13nC @ 10V | 9A Tc | 600V | 26A | 27 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
BSS316NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | Not Qualified | 1 | Halogen Free | Single | 500mW | 3.4 ns | 1.6V | 30V | 500mW Ta | 1.4A | 5.8 ns | SILICON | N-Channel | 160m Ω @ 1.4A, 10V | 2V @ 3.7μA | 94pF @ 15V | 0.6nC @ 5V | 2.3ns | 1 ns | 20V | 30V | 1.4A Ta | 7 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BSS223PWH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2002 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Contains Lead | -390mA | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | SC-70, SOT-323 | No SVHC | 800μm | 1.25mm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.21.00.95 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | Halogen Free | Single | 3.8 ns | -900mV | -20V | 250mW Ta | 390mA | 5.1 ns | SILICON | P-Channel | 1.2 Ω @ 390mA, 4.5V | 1.2V @ 1.5μA | 56pF @ 15V | 0.62nC @ 4.5V | 5ns | 12V | 390mA Ta | 20V | 22 pF | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
IRFTS9342TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 | No SVHC | 40MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 2W | 4.6 ns | -1.3V | 2W Ta | 30 ns | 5.8A | SWITCHING | 45 ns | SILICON | P-Channel | 40m Ω @ 5.8A, 10V | 2.4V @ 25μA | 595pF @ 25V | 12nC @ 10V | 13ns | 28 ns | 20V | -30V | 5.8A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRF5801TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | HEXFET® | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 2.9972mm | ROHS3 Compliant | Contains Lead | 600mA | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 990.6μm | 1.7mm | 2.2Ohm | Surface Mount | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2W | 6.5 ns | 5.5V | 2W Ta | 600mA | SWITCHING | 8.8 ns | SILICON | N-Channel | 2.2 Ω @ 360mA, 10V | 5.5V @ 250μA | 88pF @ 25V | 3.9nC @ 10V | 8ns | 19 ns | 30V | 200V | 200V | 5.5 V | 600mA Ta | 4.8A | 9.9 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
IPN50R1K4CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | SOT-223-3 | No SVHC | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 3V | 5W Tc | 4.8A | N-Channel | 1.4 Ω @ 900mA, 13V | 3.5V @ 70μA | 178pF @ 100V | 8.2nC @ 10V | 4.8A Tc | 500V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R280C6FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2007 | CoolMOS™ | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 104W | 13 ns | 600V | 104W Tc | 13.8A | SWITCHING | 0.28Ohm | 100 ns | SILICON | N-Channel | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 950pF @ 100V | 43nC @ 10V | 11ns | 12 ns | 20V | 13.8A Tc | 40A | 284 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPP50R299CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 104W | 35 ns | 500V | 104W Tc | 12A | SWITCHING | 0.299Ohm | 80 ns | SILICON | N-Channel | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 1190pF @ 100V | 31nC @ 10V | 14ns | 12 ns | 20V | 500V | 12A Tc | 550V | 26A | 289 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRF1405ZLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 10.668mm | RoHS Compliant | Lead Free | 75A | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.65mm | 4.826mm | 4.9MOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | 1 | 230W | 18 ns | 230W Tc | 75A | 48 ns | N-Channel | 4.9m Ω @ 75A, 10V | 4V @ 250μA | 4780pF @ 25V | 180nC @ 10V | 110ns | 82 ns | 20V | 55V | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF3808PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2002 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 140A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 16.51mm | 4.826mm | 7Ohm | Through Hole | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 330W | 16 ns | 4V | 330W Tc | 140A | SWITCHING | 68 ns | SILICON | N-Channel | 7m Ω @ 82A, 10V | 4V @ 250μA | 5310pF @ 25V | 220nC @ 10V | 140ns | 120 ns | 20V | 75V | 75V | 4 V | 75A | 140A Tc | 550A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BSC12DN20NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 6 ns | 200V | 50W Tc | 11.3A | SWITCHING | 0.125Ohm | 10 ns | SILICON | N-Channel | 125m Ω @ 5.7A, 10V | 4V @ 25μA | 680pF @ 100V | 8.7nC @ 10V | 4ns | 3 ns | 20V | 11.3A Tc | 45A | 60 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPD90N03S4L03ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 9 ns | 30V | 94W Tc | 90A | 37 ns | SILICON | N-Channel | 3.3m Ω @ 90A, 10V | 2.2V @ 45μA | 5100pF @ 25V | 75nC @ 10V | 6ns | 7 ns | 16V | 90A Tc | 85 mJ | 4.5V 10V | ±16V |
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