English

All Products

View All >>

Infineon Technologies(12661)

Reset
Apply
    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Min) Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IPB70N10S3L12ATMA1 IPB70N10S3L12ATMA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 14 Weeks Tape & Reel (TR) 2012 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 125W Tc 0.012Ohm 100V SILICON N-Channel 11.8m Ω @ 70A, 10V 2.4V @ 83μA 5550pF @ 25V 80nC @ 10V 70A 70A Tc 100V 280A 154 mJ 4.5V 10V ±20V
    IPI530N15N3GXKSA1 IPI530N15N3GXKSA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 52 Weeks Through Hole Tube 2008 OptiMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 10.36mm ROHS3 Compliant Lead Free 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.45mm 4.52mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 Halogen Free Single 9 ns 150V 68W Tc 21A SWITCHING 133 ns SILICON N-Channel 53m Ω @ 18A, 10V 4V @ 35μA 887pF @ 75V 12nC @ 10V 20V 150V 21A Tc 84A 60 mJ 8V 10V ±20V
    IRF6797MTRPBF IRF6797MTRPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant No 7 LOW CONDUCTION LOSS DirectFET™ Isometric MX 506μm 5.05mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 22 ns 2.8W Ta 89W Tc 36A SWITCHING 20 ns SILICON N-Channel 1.4m Ω @ 38A, 10V 2.35V @ 150μA 5790pF @ 13V 68nC @ 4.5V 32ns 15 ns 20V 25V 36A Ta 210A Tc 300A 260 mJ 4.5V 10V ±20V
    IPB50N12S3L15ATMA1 IPB50N12S3L15ATMA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 14 Weeks Tape & Reel (TR) 2016 yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 -55°C AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-263AB DRAIN N-CHANNEL 0.0206Ohm 120V METAL-OXIDE SEMICONDUCTOR SILICON 50A 200A 330 mJ
    AUIRFR8403TRL AUIRFR8403TRL Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFR8403 YES FET General Purpose Power Single 99W Tc N-Channel 3.1m Ω @ 76A, 10V 3.9V @ 100μA 3171pF @ 25V 99nC @ 10V 100A 100A Tc 40V 10V ±20V
    IPB80N06S2L11ATMA2 IPB80N06S2L11ATMA2 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 10mm ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 158W 11 ns 55V 158W Tc 80A 0.0147Ohm 46 ns SILICON N-Channel 10.7m Ω @ 40A, 10V 2V @ 93μA 2075pF @ 25V 80nC @ 10V 32ns 13 ns 20V 55V 80A Tc 280 mJ 4.5V 10V ±20V
    IPP50R520CPXKSA1 IPP50R520CPXKSA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 8 Weeks Through Hole Tube 2008 CoolMOS™ yes Last Time Buy 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 TO-220AB ISOLATED Halogen Free Single 66W 35 ns 500V 66W Tc 7.1A SWITCHING 0.52Ohm 80 ns SILICON N-Channel 520m Ω @ 3.8A, 10V 3.5V @ 250μA 680pF @ 100V 17nC @ 10V 14ns 17 ns 20V 550V 7.1A Tc 15A 166 mJ 10V ±20V
    IRL2203NSPBF IRL2203NSPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 180W Tc SWITCHING 0.007Ohm 30V SILICON N-Channel 7m Ω @ 60A, 10V 3V @ 250μA 3290pF @ 25V 60nC @ 4.5V 75A 116A Tc 30V 400A 290 mJ 4.5V 10V ±16V
    IRF2807SPBF IRF2807SPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 2002 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 230W Tc SWITCHING 0.013Ohm 75V SILICON N-Channel 13m Ω @ 43A, 10V 4V @ 250μA 3820pF @ 25V 160nC @ 10V 75A 82A Tc 75V 280A 340 mJ 10V ±20V
    IRF3710SPBF IRF3710SPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 52 Weeks Tube 2005 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W Tc SWITCHING 0.023Ohm 100V SILICON N-Channel 23m Ω @ 28A, 10V 4V @ 250μA 3130pF @ 25V 130nC @ 10V 57A 57A Tc 100V 180A 280 mJ 10V ±20V
    IRFS41N15DPBF IRFS41N15DPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W Ta SWITCHING 0.045Ohm 150V SILICON N-Channel 45m Ω @ 25A, 10V 5.5V @ 250μA 2520pF @ 25V 110nC @ 10V 41A 41A Tc 150V 164A 470 mJ 10V ±30V
    IRF1607PBF IRF1607PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 142A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.826mm 7.5Ohm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 380W 22 ns 380W Tc 142A SWITCHING 84 ns SILICON N-Channel 7.5m Ω @ 85A, 10V 4V @ 250μA 7750pF @ 25V 320nC @ 10V 130ns 86 ns 20V 75V 75V 4 V 75A 142A Tc 570A 10V ±20V
    IRFR3704ZPBF IRFR3704ZPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.73mm RoHS Compliant Lead Free Tin 60A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 48W 41 ns 2.1V 48W Tc 19 ns 60A SWITCHING 0.0084Ohm 4.9 ns SILICON N-Channel 8.4m Ω @ 15A, 10V 2.55V @ 250μA 1190pF @ 10V 14nC @ 4.5V 8.9ns 12 ns 20V 20V 60A Tc 240A 4.5V 10V ±20V
    IRF2807ZSPBF IRF2807ZSPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 9.4mOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 170W 18 ns 4V 170W Tc 75A SWITCHING 40 ns SILICON N-Channel 9.4m Ω @ 53A, 10V 4V @ 250μA 3270pF @ 25V 110nC @ 10V 79ns 45 ns 20V 75V 75V 4 V 89A 75A Tc 10V ±20V
    IRL2910SPBF IRL2910SPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 14 Weeks Tube 2003 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 200W Tc N-Channel 26m Ω @ 29A, 10V 2V @ 250μA 3700pF @ 25V 140nC @ 5V 55A Tc 100V 4V 10V ±16V
    IRLI3803PBF IRLI3803PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 10.6172mm RoHS Compliant Lead Free 67A No 3 TO-220-3 Full Pack No SVHC 16.12mm 4.826mm 6MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 Single 48W 14 ns 9mOhm TO-220AB Full-Pak 63W Tc 76A 29 ns N-Channel 6mOhm @ 40A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 230ns 35 ns 16V 30V 1 V 76A Tc 30V 5nF 4.5V 10V ±16V 6 mΩ
    IRL1404SPBF IRL1404SPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.004Ohm 40V SILICON N-Channel 4m Ω @ 95A, 10V 3V @ 250μA 6600pF @ 25V 140nC @ 5V 160A 160A Tc 40V 640A 520 mJ 4.3V 10V ±20V
    IRFR6215PBF IRFR6215PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 20 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.295Ohm 150V SILICON P-Channel 295m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 13A 13A Tc 150V 44A 310 mJ 10V ±20V
    IRFU1205PBF IRFU1205PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 44A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA 6.22mm 2.3876mm 27mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 69W 7.3 ns 107W Tc 44A SWITCHING 47 ns SILICON N-Channel 27m Ω @ 26A, 10V 4V @ 250μA 1300pF @ 25V 65nC @ 10V 69ns 60 ns 20V 55V 20A 44A Tc 160A 210 mJ 10V ±20V
    IRFR9N20DPBF IRFR9N20DPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 14 Weeks Tube 2000 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 86W Tc SWITCHING 0.38Ohm 200V SILICON N-Channel 380m Ω @ 5.6A, 10V 5.5V @ 250μA 560pF @ 25V 27nC @ 10V 9.4A 9.4A Tc 200V 38A 100 mJ 10V ±30V
    IRFR1010ZPBF IRFR1010ZPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 14 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free 42A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 17 ns 4V 140W Tc 42A SWITCHING 0.0075Ohm 42 ns SILICON N-Channel 7.5m Ω @ 42A, 10V 4V @ 100μA 2840pF @ 25V 95nC @ 10V 76ns 48 ns 20V 55V 55V 4 V 42A Tc 220 mJ 10V ±20V
    IRFL024NPBF IRFL024NPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 20 Weeks Tube 1999 HEXFET® Discontinued 1 (Unlimited) 4 EAR99 ROHS3 Compliant AVALANCHE RATED TO-261-4, TO-261AA not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1W Ta SWITCHING 0.075Ohm 55V SILICON N-Channel 75m Ω @ 2.8A, 10V 4V @ 250μA 400pF @ 25V 18.3nC @ 10V 2.8A 2.8A Ta 55V 10V ±20V
    IRFL4315PBF IRFL4315PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 1999 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 2.8W Ta N-Channel 185m Ω @ 1.6A, 10V 5V @ 250μA 420pF @ 25V 19nC @ 10V 2.6A Ta 150V 10V ±30V
    IRLU3705ZPBF IRLU3705ZPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 16 Weeks Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm RoHS Compliant Lead Free 42A No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA 6.223mm 2.3876mm 8MOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 130W 17 ns 130W Tc 42A SWITCHING 33 ns SILICON N-Channel 8m Ω @ 42A, 10V 3V @ 250μA 2900pF @ 25V 66nC @ 5V 150ns 70 ns 16V 55V 89A 42A Tc 4.5V 10V ±16V
    IRL3705NSPBF IRL3705NSPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 170W Tc SWITCHING 0.012Ohm 55V SILICON N-Channel 10m Ω @ 46A, 10V 2V @ 250μA 3600pF @ 25V 98nC @ 5V 89A 89A Tc 55V 310A 340 mJ 4V 10V ±16V
    IRFR3410PBF IRFR3410PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 20 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3W Ta 110W Tc N-Channel 39m Ω @ 18A, 10V 4V @ 250μA 1690pF @ 25V 56nC @ 10V 31A Tc 100V 10V ±20V
    IRF7834TRPBF IRF7834TRPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) EAR99 4.9784mm ROHS3 Compliant Lead Free 19A No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm 4.5MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) FET General Purpose Power 1 Single 2.5W 13.7 ns 2.5W Ta 19A 18 ns N-Channel 4.5m Ω @ 19A, 10V 2.25V @ 250μA 3710pF @ 15V 44nC @ 4.5V 14.3ns 5 ns 20V 30V 19A Ta 4.5V 10V ±20V
    IRF7241PBF IRF7241PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING SILICON P-Channel 41m Ω @ 6.2A, 10V 3V @ 250μA 3220pF @ 25V 80nC @ 10V 6.2A 6.2A Ta 40V 4.5V 10V ±20V
    IPI80N06S3L-08 IPI80N06S3L-08 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Through Hole Tube 2007 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 80A AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN 260 40 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 Single 105W 105W Tc 80A SWITCHING 0.0079Ohm 39 ns SILICON N-Channel 7.9m Ω @ 43A, 10V 2.2V @ 55μA 6475pF @ 25V 134nC @ 10V 35ns 25 ns 16V 55V 80A Tc 320A 5V 10V ±16V
    IRF3205ZSTRRPBF IRF3205ZSTRRPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 10.668mm RoHS Compliant Lead Free 75A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm 6.5MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) 1 170W 18 ns 6.5mOhm D2PAK 170W Tc 75A 45 ns N-Channel 6.5mOhm @ 66A, 10V 4V @ 250μA 3450pF @ 25V 110nC @ 10V 95ns 67 ns 20V 55V 75A Tc 55V 3.45nF 10V ±20V 6.5 mΩ