Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IPB073N15N5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | 2004 | OptiMOS™-5 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 214W Tc | SWITCHING | 0.0073Ohm | 150V | SILICON | N-Channel | 7.3m Ω @ 57A, 10V | 4.6V @ 160μA | 4700pF @ 75V | 61nC @ 10V | 114A | 114A Tc | 150V | 456A | 130 mJ | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRF7799L2TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | 9 | EAR99 | 9.144mm | RoHS Compliant | No | 11 | DirectFET™ Isometric L8 | No SVHC | 508μm | 7.112mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N9 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 125W | 36.3 ns | 4V | 4.3W Ta 125W Tc | 6.6A | SWITCHING | 0.038Ohm | 73.9 ns | SILICON | N-Channel | 38m Ω @ 21A, 10V | 5V @ 250μA | 6714pF @ 25V | 165nC @ 10V | 33.5ns | 26.6 ns | 30V | 250V | 375A | 375A Tc | 140A | 325 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||
IPB011N04LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 7 | YES | R-PSSO-G6 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | SWITCHING | 0.0014Ohm | 40V | SILICON | N-Channel | 1.1m Ω @ 100A, 10V | 2V @ 200μA | 29000pF @ 20V | 346nC @ 10V | 180A | 180A Tc | 40V | 1260A | 525 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IPB038N12N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W | 35 ns | 300W Tc | 120A | SWITCHING | 70 ns | SILICON | N-Channel | 3.8m Ω @ 100A, 10V | 4V @ 270μA | 13800pF @ 60V | 211nC @ 10V | 52ns | 21 ns | 20V | 120A Tc | 120V | 480A | 900 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
IRL60S216 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 375W Tc | 195A | N-Channel | 1.95m Ω @ 100A, 10V | 2.4V @ 250μA | 15330pF @ 25V | 255nC @ 4.5V | 195A Tc | 60V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT111N20NFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Contains Lead | 8-PowerSFN | not_compliant | 2.4mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | PG-HSOF-8 | e3 | Tin (Sn) | 1 | Halogen Free | 375W | 13 ns | 200V | 375W Tc | 96A | 175°C | 39 ns | N-Channel | 11.1m Ω @ 96A, 10V | 4V @ 267μA | 7000pF @ 100V | 87nC @ 10V | 20V | 200V | 96A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPB60R099CPATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2006 | CoolMOS™ | no | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 255W Tc | SWITCHING | 0.099Ohm | 600V | SILICON | N-Channel | 99m Ω @ 18A, 10V | 3.5V @ 1.2mA | 2800pF @ 100V | 80nC @ 10V | 31A | 31A Tc | 600V | 93A | 800 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPT60R050G7XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ G7 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerSFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 245W Tc | SWITCHING | 0.05Ohm | 600V | SILICON | N-Channel | 50m Ω @ 15.9A, 10V | 4V @ 800μA | 2670pF @ 400V | 68nC @ 10V | 44A | 44A Tc | 650V | 135A | 159 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
BSC042N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Tape & Reel (TR) | 2006 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | YES | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W Ta 57W Tc | SWITCHING | 0.0054Ohm | 30V | SILICON | N-Channel | 4.2m Ω @ 30A, 10V | 2V @ 250μA | 4300pF @ 15V | 55nC @ 10V | 17A | 17A Ta 93A Tc | 30V | 372A | 40 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BSZ0902NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | Halogen Free | 2.1W | 4.2 ns | 2V | 30V | 2.1W Ta 48W Tc | 19A | 21 ns | N-Channel | 2.6m Ω @ 20A, 10V | 2V @ 250μA | 1700pF @ 15V | 26nC @ 10V | 5.2ns | 3.6 ns | 20V | 19A Ta 40A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRF7402TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 6.8A | No | 8 | FAST SWITCHING | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 5.1 ns | 2.5W Ta | 6.8A | SWITCHING | 0.035Ohm | 24 ns | SILICON | N-Channel | 35m Ω @ 4.1A, 4.5V | 700mV @ 250μA | 650pF @ 15V | 22nC @ 4.5V | 47ns | 32 ns | 12V | 20V | 6.8A Ta | 54A | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
IPD26N06S2L35ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 68W Tc | 30A | 0.047Ohm | SILICON | N-Channel | 35m Ω @ 13A, 10V | 2V @ 26μA | 621pF @ 25V | 24nC @ 10V | 30A Tc | 120A | 80 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRL100HS121 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 6-VDFN Exposed Pad | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 11.5W Tc | N-Channel | 42m Ω @ 6.7A, 10V | 2.3V @ 10μA | 440pF @ 50V | 5.6nC @ 4.5V | 11A Tc | 100V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ0904NSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N3 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 3.3 ns | 30V | 2.1W Ta 37W Tc | 18A | SWITCHING | 0.0057Ohm | 16 ns | SILICON | N-Channel | 4m Ω @ 30A, 10V | 2V @ 250μA | 1463pF @ 15V | 11nC @ 4.5V | 4.4ns | 3 ns | 20V | Schottky Diode (Body) | 40A | 18A Ta 40A Tc | 20 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
IRLR3410TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 79W Tc | SWITCHING | 0.125Ohm | 100V | SILICON | N-Channel | 105m Ω @ 10A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 17A | 17A Tc | 100V | 60A | 150 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
IRF7805ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | 16A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 6.8MOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W | 11 ns | 2.5W Ta | 16A | 14 ns | SILICON | N-Channel | 6.8m Ω @ 16A, 10V | 2.25V @ 250μA | 2080pF @ 15V | 27nC @ 4.5V | 10ns | 3.7 ns | 20V | 30V | 2.25 V | 16A Ta | 120A | 72 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
BSZ033NE2LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 25V | 2.1W Ta 30W Tc | 40A | SWITCHING | 0.0041Ohm | SILICON | N-Channel | 3.3m Ω @ 20A, 10V | 2V @ 250μA | 1230pF @ 12V | 18.3nC @ 10V | 18A Ta 40A Tc | 160A | 20 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
IPD50R800CEBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2015 | CoolMOS™ | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 40W Tc | SWITCHING | 0.8Ohm | 500V | SILICON | N-Channel | 800m Ω @ 1.5A, 13V | 3.5V @ 130μA | 280pF @ 100V | 12.4nC @ 10V | Super Junction | 5A | 5A Tc | 500V | 15.5A | 83 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRF7469TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 9A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 17MOhm | Surface Mount | -55°C~150°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | Single | 2.5W | 11 ns | 3V | 2.5W Ta | 9A | SWITCHING | 14 ns | SILICON | N-Channel | 17m Ω @ 9A, 10V | 3V @ 250μA | 2000pF @ 20V | 23nC @ 4.5V | 2.2ns | 3.5 ns | 20V | 40V | 3 V | 9A | 9A Ta | 73A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IPD040N03LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 79W | 7.4 ns | 30V | 79W Tc | 90A | SWITCHING | 0.0059Ohm | 27 ns | SILICON | N-Channel | 4m Ω @ 30A, 10V | 2.2V @ 250μA | 3900pF @ 15V | 38nC @ 10V | 6.8ns | 4.2 ns | 20V | 89A | 90A Tc | 400A | 60 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
IPN70R360P7SATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-261-3 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 7.2W Tc | SWITCHING | 0.36Ohm | 700V | SILICON | N-Channel | 360m Ω @ 3A, 10V | 3.5V @ 150μA | 517pF @ 400V | 16.4nC @ 10V | 12.5A Tc | 700V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
IRF6665TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 4.826mm | ROHS3 Compliant | Lead Free | Tin | 4.2A | No | 3 | HIGH RELIABILITY | DirectFET™ Isometric SH | No SVHC | 506μm | 3.95mm | Surface Mount | -40°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | BOTTOM | R-XBCC-N2 | FET General Purpose Power | 1 | DRAIN | Single | 42W | 7.4 ns | 5V | 2.2W Ta 42W Tc | 3.4A | SWITCHING | 0.062Ohm | 14 ns | SILICON | N-Channel | 62m Ω @ 5A, 10V | 5V @ 250μA | 530pF @ 25V | 13nC @ 10V | 2.8ns | 4.3 ns | 20V | 100V | 5 V | 4.2A Ta 19A Tc | 10V | ±20V | ||||||||||||||||||||||||||||
IRFH8311TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-TQFN Exposed Pad | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 3.6W | 21 ns | 3.6W Ta 96W Tc | 32A | 21 ns | N-Channel | 2.1m Ω @ 20A, 10V | 2.35V @ 100μA | 4960pF @ 10V | 66nC @ 10V | 26ns | 12 ns | 20V | 30V | 32A Ta 169A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
BSC084P03NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 16 ns | -30V | 2.5W Ta 69W Tc | 14.5A | SWITCHING | 33 ns | SILICON | P-Channel | 8.4m Ω @ 50A, 10V | 3.1V @ 105μA | 4785pF @ 15V | 58nC @ 10V | 134ns | 8 ns | 25V | 14.9A Ta 78.6A Tc | 30V | 200A | 6V 10V | ±25V | ||||||||||||||||||||||||||||||
IPD50R500CEBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Cut Tape (CT) | 2013 | CoolMOS™ | no | Discontinued | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | 57W Tc | SWITCHING | 0.5Ohm | 500V | SILICON | N-Channel | 500m Ω @ 2.3A, 13V | 3.5V @ 200μA | 433pF @ 100V | 18.7nC @ 10V | Super Junction | 7.6A Tc | 500V | 24A | 129 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPP60R280E6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 104W Tc | SWITCHING | 0.28Ohm | 600V | SILICON | N-Channel | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 950pF @ 100V | 43nC @ 10V | 13.8A Tc | 600V | 40A | 284 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
SPA07N60CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Last Time Buy | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 32W Tc | SWITCHING | 0.7Ohm | 600V | SILICON | N-Channel | 700m Ω @ 4.6A, 10V | 5V @ 300μA | 790pF @ 25V | 47nC @ 10V | 6.6A | 6.6A Tc | 650V | 17A | 230 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
AUIRF6215STRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 14 ns | 3.8W Ta 110W Tc | 13A | SWITCHING | 0.29Ohm | 53 ns | SILICON | P-Channel | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 860pF @ 25V | 66nC @ 10V | 36ns | 37 ns | 20V | -150V | 13A Tc | 150V | 44A | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFS3307ZTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 230W | 230W Tc | 120A | SWITCHING | 0.0058Ohm | SILICON | N-Channel | 5.8m Ω @ 75A, 10V | 4V @ 150μA | 4750pF @ 50V | 110nC @ 10V | 64ns | 65 ns | 20V | 75V | 120A Tc | 480A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IPL65R195C7AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | CoolMOS™ C7 | yes | Active | 2A (4 Weeks) | 4 | ROHS3 Compliant | Contains Lead | 4 | 4-PowerTSFN | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 650V | 75W Tc | 12A | SWITCHING | 0.195Ohm | SILICON | N-Channel | 195m Ω @ 2.9A, 10V | 4V @ 290μA | 1150pF @ 400V | 23nC @ 10V | 12A Tc | 57 mJ | 10V | ±20V |
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