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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    SPW17N80C3FKSA1 SPW17N80C3FKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED, HIGH VOLTAGE TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 227W Tc SWITCHING 0.29Ohm 800V SILICON N-Channel 290m Ω @ 11A, 10V 3.9V @ 1mA 2320pF @ 25V 177nC @ 10V 17A 17A Tc 800V 51A 670 mJ 10V ±20V
    IRFP260MPBF IRFP260MPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 16.129mm ROHS3 Compliant Lead Free 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-247-3 No SVHC 21.1mm 5.2mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 FET General Purpose Power Not Qualified 1 TO-247AC Single 300W 17 ns 4V 300W Tc 50A SWITCHING 0.04Ohm 55 ns SILICON N-Channel 40m Ω @ 28A, 10V 4V @ 250μA 4057pF @ 25V 234nC @ 10V 60ns 48 ns 20V 200V 50A Tc 200A 560 mJ 10V ±20V
    IRFB7430PBF IRFB7430PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 375W 32 ns 2.2V 375W Tc 52 ns 195A SWITCHING 160 ns SILICON N-Channel 1.3m Ω @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 460nC @ 10V 105ns 100 ns 20V 40V 195A Tc 760 mJ 6V 10V ±20V
    IPP530N15N3GXKSA1 IPP530N15N3GXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 OptiMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 9 ns 150V 68W Tc 21A SWITCHING 13 ns SILICON N-Channel 53m Ω @ 18A, 10V 4V @ 35μA 887pF @ 75V 12nC @ 10V 3 ns 20V 21A Tc 84A 60 mJ 8V 10V ±20V
    IRF6215STRRPBF IRF6215STRRPBF Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2005 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 110W Tc SWITCHING 0.29Ohm 150V SILICON P-Channel 290m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 13A 13A Tc 150V 44A 310 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1998 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin -13A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 290mOhm Surface Mount -55°C~175°C TJ -150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 Other Transistors 1 DRAIN Single 110W 14 ns -4V 3.8W Ta 110W Tc -13A SWITCHING 53 ns SILICON P-Channel 290m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 36ns 37 ns 20V -150V 150V -4 V 13A Tc 44A 10V ±20V
    SPA08N80C3XKSA1 SPA08N80C3XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2005 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 8A No 3 AVALANCHE RATED, HIGH VOLTAGE TO-220-3 Full Pack Through Hole -55°C~150°C TJ 800V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 40W 25 ns 800V 40W Tc 8A SWITCHING 0.65Ohm 65 ns SILICON N-Channel 650m Ω @ 5.1A, 10V 3.9V @ 470μA 1100pF @ 100V 60nC @ 10V 15ns 7 ns 20V 8A 8A Tc 24A 10V ±20V
    IPA50R950CEXKSA2 IPA50R950CEXKSA2 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ CE yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 7 ns 500V 25.7W Tc 3.7A SWITCHING 0.95Ohm 25 ns SILICON N-Channel 950m Ω @ 1.2A, 13V 3.5V @ 100μA 231pF @ 100V 10.5nC @ 10V 4.9ns 19.5 ns 30V 3.7A Tc 12.8A 68 mJ 13V ±20V
    IRF3315PBF IRF3315PBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 1998 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Contains Lead, Lead Free 27A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 8.77mm 4.69mm 82mOhm Through Hole -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier FET General Purpose Power 1 TO-220AB DRAIN Single 136W 9.6 ns 4V 94W Tc 260 ns 27A SWITCHING 49 ns SILICON N-Channel 70m Ω @ 12A, 10V 4V @ 250μA 1300pF @ 25V 95nC @ 10V 32ns 38 ns 20V 150V 150V 4 V 23A Tc 84A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2012 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.83mm 2MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230W 19 ns 3V 230W Tc 30 ns 195A SWITCHING 78 ns SILICON N-Channel 2m Ω @ 100A, 10V 3.9V @ 150μA 7330pF @ 25V 225nC @ 10V 70ns 53 ns 20V 40V 3 V 195A Tc 6V 10V ±20V
    IPW90R340C3FKSA1 IPW90R340C3FKSA1 Infineon Technologies $0.00
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    		 download 40 Weeks Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 208W Tc SWITCHING 0.34Ohm 900V SILICON N-Channel 340m Ω @ 9.2A, 10V 3.5V @ 1mA 2400pF @ 100V 94nC @ 10V 15A 15A Tc 900V 34A 678 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 17A 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 75mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 260 30 1 DRAIN Single 38W 4.9 ns 4V 45W Tc 17A SWITCHING 19 ns SILICON N-Channel 75m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 34ns 27 ns 20V 55V 55V 4 V 17A Tc 68A 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2013 CoolMOS™ yes Active Not Applicable EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 27W Tc 8.4A N-Channel 800m Ω @ 2A, 10V 3.5V @ 170μA 373pF @ 100V 17.2nC @ 10V Super Junction 8.4A Tc 600V 10V ±20V
    IPP057N06N3GXKSA1 IPP057N06N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 115W 24 ns 60V 115W Tc 80A SWITCHING 0.0057Ohm 32 ns SILICON N-Channel 5.7m Ω @ 80A, 10V 4V @ 58μA 6600pF @ 30V 82nC @ 10V 68ns 9 ns 20V 80A Tc 77 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ CE yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 11 ns 500V 29.2W Tc 6.3A SWITCHING 56 ns SILICON N-Channel 380m Ω @ 3.2A, 13V 3.5V @ 260μA 584pF @ 100V 24.8nC @ 10V 9ns 8 ns 20V 6.3A Tc 210 mJ 13V ±20V
    IPP093N06N3GXKSA1 IPP093N06N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 71W 15 ns 60V 71W Tc 50A SWITCHING 20 ns SILICON N-Channel 9.3m Ω @ 50A, 10V 4V @ 34μA 2900pF @ 30V 36nC @ 10V 40ns 5 ns 20V 50A Tc 200A 10V ±20V
    IRFIZ34NPBF IRFIZ34NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6172mm ROHS3 Compliant Lead Free 20A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.826mm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 1 TO-220AB ISOLATED Single 31W 7 ns 4V 37W Tc 86 ns 21A SWITCHING 0.04Ohm 2.5kV 31 ns SILICON N-Channel 40m Ω @ 11A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 49ns 40 ns 20V 55V 55V 20 V 21A Tc 10V ±20V
    IPA80R1K4P7XKSA1 IPA80R1K4P7XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2003 CoolMOS™ yes Active Not Applicable ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 24W Tc 4A N-Channel 1.4 Ω @ 1.4A, 10V 3.5V @ 700μA 250pF @ 500V 10nC @ 10V Super Junction 4A Tc 800V 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 83W 60V 3W Ta 83W Tc 45A SWITCHING 0.006Ohm 20 ns SILICON N-Channel 6m Ω @ 45A, 10V 2.8V @ 36μA 2000pF @ 30V 27nC @ 10V 12ns 7 ns 20V 60V 17A Ta 45A Tc 60 mJ 6V 10V ±20V
    IPD50N04S408ATMA1 IPD50N04S408ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2010 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 46W Tc 0.0079Ohm 40V SILICON N-Channel 7.9m Ω @ 50A, 10V 4V @ 17μA 1780pF @ 6V 22.4nC @ 10V 50A 50A Tc 40V 200A 55 mJ 10V ±20V
    BSC032NE2LSATMA1 BSC032NE2LSATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-N5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W 25V 2.8W Ta 78W Tc 22A SWITCHING SILICON N-Channel 3.2m Ω @ 30A, 10V 2V @ 250μA 1200pF @ 12V 16nC @ 10V 2.8ns 20V 22A Ta 84A Tc 336A 20 mJ 4.5V 10V ±20V
    IPB034N06L3GATMA1 IPB034N06L3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 167W 25 ns 60V 167W Tc 90A SWITCHING 64 ns SILICON N-Channel 3.4m Ω @ 90A, 10V 2.2V @ 93μA 13000pF @ 30V 79nC @ 4.5V 78ns 13 ns 20V 90A Tc 4.5V 10V ±20V
    IPD060N03LGATMA1 IPD060N03LGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Contains Lead 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.41mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Halogen Free Single 56W 5 ns 30V 56W Tc 50A SWITCHING 0.009Ohm 20 ns SILICON N-Channel 6m Ω @ 30A, 10V 2.2V @ 250μA 2400pF @ 15V 23nC @ 10V 3ns 20V 30V 50A Tc 60 mJ 4.5V 10V ±20V
    IRF3710PBF IRF3710PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Lead Free 57A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 2.54mm 19.8mm 4.69mm 23MOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-220AB DRAIN Single 200W 12 ns 4V 200W Tc 220 ns 57A 175°C SWITCHING 45 ns SILICON N-Channel 23m Ω @ 28A, 10V 4V @ 250μA 3130pF @ 25V 130nC @ 10V 58ns 47 ns 20V 100V 100V 4 V 57A Tc 280 mJ 10V ±20V
    IRFS38N20DTRLP IRFS38N20DTRLP Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2002 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 38A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 54mOhm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 320W 16 ns 5V 3.8W Ta 300W Tc 240 ns 44A SWITCHING 29 ns SILICON N-Channel 54m Ω @ 26A, 10V 5V @ 250μA 2900pF @ 25V 91nC @ 10V 95ns 47 ns 30V 200V 200V 5 V 43A Tc 460 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free Tin 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.826mm 9.65mm 26MOhm Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 330W 33 ns 330W Tc 62A SWITCHING 21 ns SILICON N-Channel 26m Ω @ 46A, 10V 5V @ 250μA 4600pF @ 25V 98nC @ 10V 20ns 31 ns 30V 200V 62A Tc 260A 10V ±30V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 19.8mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 1 FET General Purpose Power 1 TO-220AB Single 380W 18 ns 5V 380W Tc 104A 175°C SWITCHING 41 ns SILICON N-Channel 11m Ω @ 62A, 10V 5V @ 250μA 5270pF @ 50V 120nC @ 10V 73ns 39 ns 20V 150V 150V 5 V 104A Tc 420A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.66mm ROHS3 Compliant Lead Free Tin 120A No 3 TO-220-3 No SVHC 9.02mm 4.82mm 5.8MOhm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230mW 15 ns 4V 230W Tc 33 ns 120A SWITCHING 38 ns SILICON N-Channel 5.8m Ω @ 75A, 10V 4V @ 150μA 4750pF @ 50V 110nC @ 10V 64ns 65 ns 20V 75V 75V 4 V 120A Tc 480A 10V ±20V
    IRFB7434PBF IRFB7434PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2012 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.83mm 1.6MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 294W 24 ns 3V 294W Tc 38 ns 195A SWITCHING 115 ns SILICON N-Channel 1.6m Ω @ 100A, 10V 3.9V @ 250μA 10820pF @ 25V 324nC @ 10V 68ns 20V 40V 3 V 195A Tc 490 mJ 6V 10V ±20V
    IPP114N12N3GXKSA1 IPP114N12N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 136W 19 ns 120V 136W Tc 75A SWITCHING 30 ns SILICON N-Channel 11.4m Ω @ 75A, 10V 4V @ 83μA 4310pF @ 60V 65nC @ 10V 36ns 7 ns 20V 75A Tc 300A 10V ±20V