Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IPP120N04S302AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2006 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | ULTRA LOW RESISTANCE | TO-220-3 | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 300W Tc | 0.0023Ohm | 40V | SILICON | N-Channel | 2.3m Ω @ 80A, 10V | 4V @ 230μA | 14300pF @ 25V | 210nC @ 10V | 120A | 120A Tc | 40V | 480A | 1880 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRF1324WL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2011 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-262-3 Wide Leads | No SVHC | 11.3mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | TO-262AA | Single | 300W | 18 ns | 2V | 300W Tc | 240A | SWITCHING | 75 ns | SILICON | N-Channel | 1.3m Ω @ 195A, 10V | 4V @ 250μA | 7630pF @ 19V | 180nC @ 10V | 200ns | 110 ns | 20V | 24V | 2 V | 240A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPD80R600P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 60W Tc | SWITCHING | 0.6Ohm | 800V | SILICON | N-Channel | 600m Ω @ 3.4A, 10V | 3.5V @ 170μA | 570pF @ 500V | 20nC @ 10V | 8A Tc | 800V | 22A | 20 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
BSC011N03LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | No | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 6.7 ns | 30V | 2.5W Ta 96W Tc | 37A | SWITCHING | 37 ns | SILICON | N-Channel | 1.1m Ω @ 30A, 10V | 2.2V @ 250μA | 4700pF @ 15V | 72nC @ 10V | 8.8ns | 6.2 ns | 20V | 37A Ta 100A Tc | 400A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPL60R360P6SATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ P6 | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | Surface Mount | 75.891673mg | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-N5 | 1 | 1 | DRAIN | Halogen Free | Single | 12 ns | 600V | 89.3W Tc | 11.3A | SWITCHING | 0.36Ohm | 33 ns | SILICON | N-Channel | 360m Ω @ 4.5A, 10V | 4.5V @ 370μA | 1010pF @ 100V | 22nC @ 10V | 7ns | 7 ns | 30V | 11.3A Tc | 30A | 247 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPD70N10S312ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 17 ns | 100V | 125W Tc | 70A | 0.0111Ohm | 25 ns | SILICON | N-Channel | 11.1m Ω @ 70A, 10V | 4V @ 83μA | 4355pF @ 25V | 65nC @ 10V | 8ns | 20V | 70A Tc | 280A | 410 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPD60R280P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | 53W Tc | SWITCHING | 0.28Ohm | 600V | SILICON | N-Channel | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 761pF @ 400V | 18nC @ 10V | 12A Tc | 600V | 36A | 38 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
BSC052N08NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | DRAIN | Halogen Free | Single | 2.5W | 12 ns | 80V | 2.5W Ta 83W Tc | 19A | 150°C | SWITCHING | 0.0052Ohm | 19 ns | SILICON | N-Channel | 5.2m Ω @ 47.5A, 10V | 3.8V @ 49μA | 2900pF @ 40V | 40nC @ 10V | 7ns | 5 ns | 20V | 80V | 95A Tc | 70 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRF6613TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | 23A | No | 5 | LOW CONDUCTION LOSS | DirectFET™ Isometric MT | No SVHC | 508μm | 5.0546mm | 3.4MOhm | Surface Mount | -40°C~150°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 30 | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 18 ns | 2.25V | 2.8W Ta 89W Tc | 150mA | SWITCHING | 27 ns | SILICON | N-Channel | 3.4m Ω @ 23A, 10V | 2.25V @ 250μA | 5950pF @ 15V | 63nC @ 4.5V | 47ns | 4.9 ns | 20V | 40V | 23A Ta 150A Tc | 200 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFH5020TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6mm | ROHS3 Compliant | Lead Free | No | 8 | HIGH RELIABILITY | 8-PowerTDFN | No SVHC | 1.05mm | 5mm | 55MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | R-PDSO-N5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 9.3 ns | 5V | 3.6W Ta 8.3W Tc | 5.1A | 150°C | SWITCHING | 21 ns | SILICON | N-Channel | 55m Ω @ 7.5A, 10V | 5V @ 150μA | 2290pF @ 100V | 54nC @ 10V | 7.7ns | 6 ns | 20V | 200V | 43A | 5.1A Ta | 63A | 320 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFH5215TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-VQFN Exposed Pad | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 104W | 6.7 ns | 5V | 3.6W Ta 104W Tc | 5A | SWITCHING | 11 ns | SILICON | N-Channel | 58m Ω @ 16A, 10V | 5V @ 100μA | 1350pF @ 50V | 32nC @ 10V | 6.3ns | 2.9 ns | 20V | 150V | 5 V | 5A | 5A Ta 27A Tc | 96 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPC100N04S51R9ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W Tc | 0.0023Ohm | 40V | SILICON | N-Channel | 1.9m Ω @ 50A, 10V | 3.4V @ 50μA | 3770pF @ 25V | 65nC @ 10V | 100A | 100A Tc | 40V | 400A | 130 mJ | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRF6618TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | 30A | No | 5 | DirectFET™ Isometric MT | No SVHC | 508μm | 5.0546mm | 2.2MOhm | Surface Mount | -40°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 30 | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 21 ns | 1.64V | 2.8W Ta 89W Tc | 170mA | SWITCHING | 27 ns | SILICON | N-Channel | 2.2m Ω @ 30A, 10V | 2.35V @ 250μA | 5640pF @ 15V | 65nC @ 4.5V | 71ns | 8.1 ns | 20V | 30V | 29A | 30A Ta 170A Tc | 240A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
AUIRF7675M2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | DirectFET™ Isometric M2 | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 45W | 10 ns | 4V | 2.7W Ta 45W Tc | 4.4A | AMPLIFIER | 0.056Ohm | 14 ns | SILICON | N-Channel | 56m Ω @ 11A, 10V | 5V @ 100μA | 1360pF @ 25V | 32nC @ 10V | 13ns | 7.5 ns | 20V | 150V | 90A | 4.4A Ta 18A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IPD110N12N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 16 ns | 120V | 136W Tc | 75A | SWITCHING | 0.011Ohm | 24 ns | SILICON | N-Channel | 11m Ω @ 75A, 10V | 3V @ 83μA (Typ) | 4310pF @ 60V | 65nC @ 10V | 8 ns | 20V | 75A Tc | 120 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
AUIRFN8403TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
11 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | 5.85mm | ROHS3 Compliant | 8 | ULTRA LOW RESISTANCE | 8-PowerTDFN | 1.17mm | 5mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | IRFN8403 | R-PDSO-F5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 11 ns | 4.3W Ta 94W Tc | 95A | SWITCHING | 0.0033Ohm | 40V | 33 ns | SILICON | N-Channel | 3.3m Ω @ 50A, 10V | 3.9V @ 100μA | 3174pF @ 25V | 98nC @ 10V | 37ns | 26 ns | 20V | 95A Tc | 40V | 492A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
BSC027N06LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 83W Tc | SWITCHING | 0.0027Ohm | 60V | SILICON | N-Channel | 2.7m Ω @ 50A, 10V | 2.3V @ 49μA | 4400pF @ 30V | 30nC @ 4.5V | 23A | 100A Tc | 60V | 400A | 100 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC028N06NSTATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | YES | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3W Ta 100W Tc | SWITCHING | 0.0028Ohm | 60V | SILICON | N-Channel | 2.8m Ω @ 50A, 10V | 3.3V @ 50μA | 3375pF @ 30V | 49nC @ 10V | 23A | 24A Ta 100A Tc | 60V | 400A | 100 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL3705NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 89A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.699mm | 10.16mm | 10mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 170W | 12 ns | 2V | 3.8W Ta 170W Tc | 140 ns | 89A | SWITCHING | 37 ns | SILICON | N-Channel | 10m Ω @ 46A, 10V | 2V @ 250μA | 3600pF @ 25V | 98nC @ 5V | 140ns | 78 ns | 16V | 55V | 2 V | 89A Tc | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||
IPD031N06L3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 167W | 25 ns | 60V | 167W Tc | 100A | SWITCHING | 64 ns | SILICON | N-Channel | 3.1m Ω @ 100A, 10V | 2.2V @ 93μA | 13000pF @ 30V | 79nC @ 4.5V | 78ns | 13 ns | 20V | 100A Tc | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRF6678 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Obsolete | 3 (168 Hours) | 3 | EAR99 | Non-RoHS Compliant | Lead Free | 30A | 7 | DirectFET™ Isometric MX | Surface Mount | -40°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | NO LEAD | 260 | 40 | R-XBCC-N3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 2.8W Ta 89W Tc | 24A | SWITCHING | 0.0022Ohm | 27 ns | SILICON | N-Channel | 2.2m Ω @ 30A, 10V | 2.25V @ 250μA | 5640pF @ 15V | 65nC @ 4.5V | 71ns | 8.1 ns | 20V | 30V | 30A Ta 150A Tc | 240A | 210 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRF6716MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | No | 5 | DirectFET™ Isometric MX | No SVHC | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 78W | 26 ns | 1.9V | 3.6W Ta 78W Tc | 39A | SWITCHING | 0.0016Ohm | 25 ns | SILICON | N-Channel | 1.6m Ω @ 40A, 10V | 2.4V @ 100μA | 5150pF @ 13V | 59nC @ 4.5V | 105ns | 41 ns | 20V | 25V | 180A | 39A Ta 180A Tc | 320A | 330 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRF6619TR1PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | 6.35mm | RoHS Compliant | Lead Free | 30A | No | 5 | DirectFET™ Isometric MX | No SVHC | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | 20V | MOSFET (Metal Oxide) | 1 | 89W | 21 ns | 1.55V | 3mOhm | DIRECTFET™ MX | 2.8W Ta 89W Tc | 24A | 25 ns | N-Channel | 2.2mOhm @ 30A, 10V | 2.45V @ 250μA | 5040pF @ 10V | 57nC @ 4.5V | 71ns | 9.3 ns | 20V | 20V | 20V | 1.55 V | 30A Ta 150A Tc | 20V | 5.04nF | 4.5V 10V | ±20V | 2.2 mΩ | |||||||||||||||||||||||||||||||||||||||||||
IPB160N04S3H2ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | ULTRA LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 214W | 30 ns | 40V | 214W Tc | 160A | 46 ns | SILICON | N-Channel | 2.1m Ω @ 80A, 10V | 4V @ 150μA | 9600pF @ 25V | 145nC @ 10V | 16ns | 17 ns | 20V | 160A Tc | 640A | 898 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRFS3607TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 140W | 16 ns | 140W Tc | 80A | SWITCHING | 0.009Ohm | 43 ns | SILICON | N-Channel | 9m Ω @ 46A, 10V | 4V @ 100μA | 3070pF @ 50V | 84nC @ 10V | 110ns | 96 ns | 20V | 75V | 80A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
BSC026N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Tin | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 2.1mOhm | PG-TDSON-8-6 | 2.5W Ta 63W Tc | 100A | N-Channel | 2.6mOhm @ 50A, 10V | 2V @ 250μA | 2300pF @ 20V | 32nC @ 10V | 4ns | 20V | 23A Ta 100A Tc | 40V | 2.3nF | 4.5V 10V | ±20V | 2.6 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC018NE2LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 25V | 2.5W Ta 69W Tc | 29A | SWITCHING | 0.0024Ohm | SILICON | N-Channel | 1.8m Ω @ 30A, 10V | 2V @ 250μA | 2500pF @ 12V | 36nC @ 10V | 4.8ns | 20V | 29A Ta 100A Tc | 400A | 45 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
BSC019N04NSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 40V | 2.5W Ta 125W Tc | 29A | SWITCHING | SILICON | N-Channel | 1.9m Ω @ 50A, 10V | 4V @ 85μA | 8800pF @ 20V | 108nC @ 10V | 5.6ns | 20V | 30A Ta 100A Tc | 400A | 295 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRLR3915TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 61A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.26mm | 6.22mm | 14mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 120W | 7.4 ns | 3V | 120W Tc | 30A | SWITCHING | 26 ns | SILICON | N-Channel | 14m Ω @ 30A, 10V | 3V @ 250μA | 1870pF @ 25V | 92nC @ 10V | 51ns | 100 ns | 16V | 55V | 55V | 3 V | 30A Tc | 240A | 200 mJ | 5V 10V | ±16V | |||||||||||||||||||||||||||||||
IRF7456TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | 16A | No | 8 | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 6.5mOhm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | Single | 2.5W | 20 ns | 2V | 2.5W Ta | 72 ns | 16A | SWITCHING | 50 ns | SILICON | N-Channel | 6.5m Ω @ 16A, 10V | 2V @ 250μA | 3640pF @ 15V | 62nC @ 5V | 25ns | 52 ns | 12V | 20V | 20V | 2 V | 16A Ta | 250 mJ | 2.8V 10V | ±12V |
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