Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Input Capacitance | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
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IXGT50N90B2D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | Tube | HiPerFAST™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | 4.500005g | Standard | IXG*50N90 | 400W | Single | 200 ns | 75A | 900V | 2.7V | 2.7V | 2.7V @ 15V, 50A | PT | 135nC | 20ns/350ns | 4.7mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGK50N60C2D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2012 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-264-3, TO-264AA | Through Hole | 10.000011g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*50N60 | 3 | Not Qualified | 480W | 480W | 1 | COLLECTOR | N-CHANNEL | Single | 35 ns | 75A | 600V | 600V | MOTOR CONTROL | SILICON | 2.5V | 43 ns | 2.5V @ 15V, 40A | 230 ns | PT | 480V, 40A, 2 Ω, 15V | 138nC | 300A | 18ns/115ns | 380μJ (off) | ||||||||||||||||||||||||||||||||||||
IXGT16N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2006 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | IXG*16N170 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 190W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 190W | 32A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 2.7V | 90 ns | 3.5V @ 15V, 16A | 1600 ns | NPT | 20V | 1700V | 5V | 1100ns | 1360V, 16A, 10 Ω, 15V | 78nC | 80A | 45ns/400ns | 9.3mJ (off) | ||||||||||||||||||||||||||||
IXBH10N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2003 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 140W | 140W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 360 ns | 20A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 2.3V | 63 ns | 3.8V @ 15V, 10A | 1800 ns | 20V | 1700V | 5V | 1360V, 10A, 56 Ω, 15V | 30nC | 40A | 35ns/500ns | 6mJ (off) | |||||||||||||||||||||||||||||||
IXYJ20N120C3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 16.13mm | ROHS3 Compliant | 3 | TO-247-3 | unknown | 21.34mm | 5.21mm | Through Hole | -55°C~150°C TJ | Standard | IXY*20N120 | Insulated Gate BIP Transistors | 105W | N-CHANNEL | Single | 105W | 195 ns | 21A | 1.2kV | 1.2kV | 4V | 3.4V @ 15V, 20A | 20V | 1200V | 5V | 600V, 20A, 10 Ω, 15V | 53nC | 84A | 20ns/90ns | 1.3mJ (on), 500μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
IXXH110N65B4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
28 Weeks | XPT™, GenX4™ | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 880W | 40ns | 2.1V @ 15V, 110A | PT | 650V | 250A | 400V, 55A, 2 Ω, 15V | 183nC | 570A | 26ns/146ns | 2.2mJ (on), 1.05mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGT15N120CD1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2000 | no | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e0 | Tin/Lead (Sn/Pb) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*15N120 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | COLLECTOR | N-CHANNEL | Single | 40 ns | 30A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 43 ns | 3.8V @ 15V, 15A | 520 ns | 20V | 1200V | 5V | 190ns | 960V, 15A, 10 Ω, 15V | 69nC | 60A | 25ns/150ns | 1.05mJ (off) | ||||||||||||||||||||||||||||||
IXGA30N120B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Surface Mount | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | unknown | Surface Mount | -55°C~150°C TJ | Standard | e3 | PURE TIN | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*30N120 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 300W | 60A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 2.96V | 56 ns | 3.5V @ 15V, 30A | 471 ns | PT | 20V | 1200V | 5V | 960V, 30A, 5 Ω, 15V | 87nC | 150A | 16ns/127ns | 3.47mJ (on), 2.16mJ (off) | ||||||||||||||||||||||||||
IXGP30N120B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | TO-220-3 | No SVHC | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*30N120 | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | SINGLE | TO-220AB | COLLECTOR | N-CHANNEL | 60A | 1.2kV | 3.5V | POWER CONTROL | SILICON | 3.5V | 56 ns | 3.5V @ 15V, 30A | 471 ns | PT | 20V | 1200V | 5V | 960V, 30A, 5 Ω, 15V | 87nC | 150A | 16ns/127ns | 3.47mJ (on), 2.16mJ (off) | ||||||||||||||||||||||||||
IXGT32N120A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2011 | GenX3™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | -55°C~150°C TJ | Standard | e3 | PURE TIN | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 300W | 75A | 1.2kV | 2.35V | POWER CONTROL | SILICON | 1.2kV | 239 ns | 2.35V @ 15V, 32A | 1380 ns | PT | 20V | 1200V | 5V | 89nC | 230A | ||||||||||||||||||||||||||||||||||
IXGT6N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2009 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*6N170 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 75W | 75W | 1 | COLLECTOR | N-CHANNEL | Single | 6A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 7V | 91 ns | 7V @ 15V, 3A | 271 ns | NPT | 20V | 1700V | 5V | 65ns | 850V, 6A, 33 Ω, 15V | 18.5nC | 14A | 46ns/220ns | 590μJ (on), 180μJ (off) | ||||||||||||||||||||||||||||
IXGH32N120A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2011 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 75A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 2.15nF | 2.35V | 239 ns | 2.35V @ 15V, 32A | 1380 ns | PT | 20V | 1200V | 5V | 89nC | 230A | ||||||||||||||||||||||||||||||||
IXYH25N250CHV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 937W | 34ns | 4V @ 15V, 25A | 2500V | 95A | 1250V, 25A, 5 Ω, 15V | 147nC | 235A | 15ns/230ns | 8.3mJ (on), 7.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXXH30N65B4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tube | 2013 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 230W | N-CHANNEL | Single | 230W | 32 ns | 65A | 650V | 2V | 170 ns | 1.66V | 2V @ 15V, 30A | PT | 20V | 6.5V | 400V, 30A, 15 Ω, 15V | 52nC | 146A | 32ns/170ns | 1.55mJ (on), 480μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
IXYH20N120C3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | EAR99 | 16.26mm | ROHS3 Compliant | 3 | TO-247-3 | 21.46mm | 5.3mm | Through Hole | -55°C~150°C TJ | Standard | IXY*20N120 | Insulated Gate BIP Transistors | 230W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 230W | 195ns | 36A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 4V | 60 ns | 3.4V @ 15V, 20A | 220 ns | 20V | 1200V | 5V | 600V, 20A, 10 Ω, 15V | 53nC | 88A | 20ns/90ns | 1.3mJ (on), 500μJ (off) | ||||||||||||||||||||||||||||||||||
IXBT20N360HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2014 | BIMOSFET™ | Not For New Designs | 1 (Unlimited) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | -55°C~150°C TJ | Standard | 430W | 430W | 1.7 μs | 70A | 3.6kV | 3.4V | 3.4V @ 15V, 20A | 3600V | 1500V, 20A, 10 Ω, 15V | 110nC | 220A | 18ns/238ns | 15.5mJ (on), 4.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYN50N170CV1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | SOT-227-4, miniBLOC | Chassis Mount | -55°C~175°C TJ | Standard | 880W | 255ns | 3.7V @ 15V, 50A | 1700V | 120A | 850V, 50A, 1 Ω, 15V | 260nC | 485A | 22ns/236ns | 8.7mJ (on), 5.6mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXBH42N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Bulk | 2008 | BIMOSFET™ | yes | Active | Not Applicable | 3 | 16.26mm | ROHS3 Compliant | Lead Free | 75A | 3 | LOW CONDUCTION LOSS | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | 1.7kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXB*42N170 | 3 | Insulated Gate BIP Transistors | Not Qualified | 360W | 1 | COLLECTOR | N-CHANNEL | Single | 360W | 45 ns | 1.32μs | 80A | 1.7kV | 1.7kV | POWER CONTROL | 365 ns | SILICON | 35ns | 224 ns | 2.8V @ 15V, 42A | 1070 ns | 20V | 1700V | 5.5V | 188nC | 300A | |||||||||||||||||||||||||
IXBF12N300 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2012 | BIMOSFET™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | i4-Pac™-5 (3 Leads) | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 100W | 125W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1.4 μs | 22A | 3kV | 3.2V | POWER CONTROL | SILICON | 460 ns | 3.2V @ 15V, 12A | 705 ns | 20V | 3000V | 26A | 5V | 62nC | 98A | |||||||||||||||||||||||||||||||||
IXGT2N250 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2009 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 32W | 32W | 1 | COLLECTOR | N-CHANNEL | Single | 5.5A | 2.5kV | 3.1V | POWER CONTROL | SILICON | 115 ns | 3.1V @ 15V, 2A | 278 ns | 20V | 2500V | 5.5V | 10.5nC | 13.5A | |||||||||||||||||||||||||||||||||||||
IXGH40N120C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*40N120 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 380W | 380W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | 75A | 1.2kV | 4.4V | POWER CONTROL | SILICON | 52 ns | 4.4V @ 15V, 30A | 475 ns | PT | 20V | 1200V | 5V | 600V, 30A, 3 Ω, 15V | 142nC | 200A | 17ns/130ns | 1.8mJ (on), 550μJ (off) | |||||||||||||||||||||||||||||||
IXYH16N170C | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Tube | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | 310W | 19ns | 3.8V @ 15V, 16A | 1700V | 40A | 850V, 16A, 10 Ω, 15V | 56nC | 100A | 11ns/140ns | 2.1mJ (on), 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXXH80N65B4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2015 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 625W | Single | 625W | 160A | 650V | 2V | 1.65V | 2V @ 15V, 80A | PT | 400V, 80A, 3 Ω, 15V | 120nC | 430A | 38ns/120ns | 3.77mJ (on), 1.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IXBH40N160 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Bulk | 2006 | BIMOSFET™ | yes | Active | Not Applicable | 3 | ROHS3 Compliant | Lead Free | 33A | No | 3 | BIPOLAR MOS TRANSISTOR WITH COLLECTOR-EMITTER ON RESISTANCE OF 0.24 OHMS | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | 1.6kV | Standard | 3 | Insulated Gate BIP Transistors | 350W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 350W | 33A | 1.6kV | 1.6kV | MOTOR CONTROL | SILICON | 60ns | 260 ns | 7.1V @ 15V, 20A | 310 ns | 20V | 6 V | 1600V | 6V | 700ns | 960V, 20A, 22 Ω, 15V | 130nC | 40A | ||||||||||||||||||||||||||||||||
IXYH40N120C3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | 16.26mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-247-3 | 21.46mm | 5.3mm | Through Hole | -55°C~150°C TJ | Standard | 3 | Insulated Gate BIP Transistors | 480W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 480W | 24 ns | 195ns | 64A | 1.2kV | 1.2kV | POWER CONTROL | 125 ns | SILICON | 4.8V | 99 ns | 4V @ 15V, 40A | 178 ns | 20V | 1200V | 5V | 600V, 40A, 10 Ω, 15V | 85nC | 105A | 24ns/125ns | 3.9mJ (on), 660μJ (off) | |||||||||||||||||||||||||||||||
IXGH60N60C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*60N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 380W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 380W | 75A | 600V | 600V | POWER CONTROL | SILICON | 2.2V | 54 ns | 2.5V @ 15V, 40A | 198 ns | PT | 20V | 5V | 480V, 40A, 3 Ω, 15V | 115nC | 360A | 21ns/70ns | 800μJ (on), 450μJ (off) | ||||||||||||||||||||||||||||||||
IXYL40N250CV1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | 2017 | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | ISOPLUSi5-Pak™ | Through Hole | -55°C~175°C TJ | Standard | 577W | 210ns | 4V @ 15V, 40A | 2500V | 70A | 1250V, 40A, 1 Ω, 15V | 270nC | 400A | 21ns/200ns | 11.7mJ (on), 6.9mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGX120N60A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | IXG*120N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 780W | 1 | COLLECTOR | N-CHANNEL | Single | 780W | 200A | 600V | 600V | POWER CONTROL | SILICON | 1.2V | 123 ns | 1.35V @ 15V, 100A | 830 ns | PT | 20V | 5V | 480V, 100A, 1.5 Ω, 15V | 450nC | 600A | 39ns/295ns | 2.7mJ (on), 6.6mJ (off) | ||||||||||||||||||||||||||||||
IXYK100N120C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2011 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | 20.29mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | unknown | 26.59mm | 5.31mm | Through Hole | -55°C~175°C TJ | Standard | 3 | Insulated Gate BIP Transistors | 1.15kW | 1150W | 1 | COLLECTOR | N-CHANNEL | Single | 1.15kW | 32 ns | 188A | 1.2kV | 1.2kV | POWER CONTROL | 123 ns | SILICON | 2.9V | 122 ns | 3.5V @ 15V, 100A | 265 ns | 20V | 1200V | 5V | 600V, 100A, 1 Ω, 15V | 270nC | 490A | 32ns/123ns | 6.5mJ (on), 2.9mJ (off) | |||||||||||||||||||||||||||||||
IXYR100N120C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2012 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | 16.13mm | ROHS3 Compliant | Lead Free | 247 | AVALANCHE RATED | TO-247-3 | 21.34mm | 5.21mm | Through Hole | -55°C~175°C TJ | Standard | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | 484W | 1 | ISOLATED | N-CHANNEL | Single | 484W | 32 ns | 104A | 1.2kV | 1.2kV | POWER CONTROL | 123 ns | SILICON | 2.9V | 122 ns | 3.5V @ 15V, 100A | 265 ns | 20V | 1200V | 5V | 600V, 100A, 1 Ω, 15V | 270nC | 480A | 32ns/123ns | 6.5mJ (on), 2.9mJ (off) |
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