Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Element Configuration | Power Dissipation | Turn On Delay Time | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Power Dissipation Ambient-Max | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXGH10N100AU1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1997 | Obsolete | Not Applicable | 3 | RoHS Compliant | 20A | 3 | HIGH SPEED | TO-247-3 | Through Hole | -55°C~150°C TJ | 1kV | Standard | SINGLE | IXG*10N100 | Insulated Gate BIP Transistors | Not Qualified | 100W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 60ns | 20A | 1kV | 4V | POWER CONTROL | SILICON | 300 ns | 4V @ 15V, 10A | 1200 ns | 20V | 4 V | 1000V | 5.5V | 800V, 10A, 150 Ω, 15V | 52nC | 40A | 100ns/550ns | 2mJ (off) | ||||||||||||||||||||||||||||||||||||||||
IXGH32N60AU1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1996 | HiPerFAST™ | yes | Obsolete | Not Applicable | 3 | RoHS Compliant | Lead Free | 60A | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*32N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 50ns | 60A | 600V | 2.9V | MOTOR CONTROL | SILICON | 60 ns | 2.9V @ 15V, 32A | 400 ns | 20V | 5V | 175ns | 480V, 32A, 4.7 Ω, 15V | 125nC | 120A | 25ns/120ns | 1.8mJ (off) | |||||||||||||||||||||||||||||||||||||
IXYH50N120C3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | 16.26mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-247-3 | 21.46mm | 5.3mm | Through Hole | -55°C~150°C TJ | Standard | 3 | Insulated Gate BIP Transistors | 625W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 625W | 24 ns | 195ns | 90A | 1.2kV | 1.2kV | POWER CONTROL | 240 ns | SILICON | 4.2V | 82 ns | 4V @ 15V, 50A | 372 ns | 20V | 1200V | 5V | 600V, 50A, 5 Ω, 15V | 142nC | 210A | 28ns/133ns | 3mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||
IXXX200N60C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | XPT™, GenX3™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | SINGLE | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 1 | SINGLE | COLLECTOR | N-CHANNEL | 1630W | 340A | 600V | 2.1V | POWER CONTROL | SILICON | 143 ns | 2.1V @ 15V, 100A | 240 ns | PT | 20V | 6V | 360V, 100A, 1 Ω, 15V | 315nC | 900A | 47ns/125ns | 3mJ (on), 1.7mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
IXGH30N120B3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*30N120 | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 300W | 100ns | 150A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 2.96V | 56 ns | 3.5V @ 15V, 30A | 471 ns | PT | 20V | 1200V | 5V | 960V, 30A, 5 Ω, 15V | 87nC | 16ns/127ns | 3.47mJ (on), 2.16mJ (off) | ||||||||||||||||||||||||||||||||||
IXYT25N250CHV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~175°C TJ | Standard | 937W | 34ns | 4V @ 15V, 25A | 2500V | 95A | 1250V, 25A, 5 Ω, 15V | 147nC | 235A | 15ns/230ns | 8.3mJ (on), 7.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXXX110N65B4H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2013 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | TO-247-3 | not_compliant | Through Hole | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | 110N65 | Insulated Gate BIP Transistors | 880W | N-CHANNEL | Single | 880W | 26 ns | 100 ns | 240A | 650V | 2.1V | 146 ns | 1.75V | 2.1V @ 15V, 110A | PT | 20V | 6.5V | 400V, 55A, 2 Ω, 15V | 183nC | 630A | 38ns/156ns | 2.2mJ (on), 1.05mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
IXGH16N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2006 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 16.26mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | GULL WING | IXG*16N170 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | 190W | 1 | TO-268AA | COLLECTOR | N-CHANNEL | Single | 190W | 45 ns | 32A | 1.7kV | 1.7kV | POWER CONTROL | 200 ns | SILICON | 2.7V | 90 ns | 3.5V @ 15V, 16A | 1600 ns | NPT | 20V | 1700V | 5V | 1100ns | 1360V, 16A, 10 Ω, 15V | 78nC | 80A | 45ns/400ns | 9.3mJ (off) | |||||||||||||||||||||||||||
IXXX160N65B4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
28 Weeks | Through Hole | Tube | 2013 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | not_compliant | Through Hole | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | 160N65 | Insulated Gate BIP Transistors | 940W | N-CHANNEL | Single | 940W | 310A | 650V | 1.8V | 1.54V | 1.8V @ 15V, 160A | PT | 20V | 6.5V | 400V, 80A, 1 Ω, 15V | 425nC | 860A | 52ns/220ns | 3.3mJ (on), 1.88mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
IXXH110N65C4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2015 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 110N65 | Insulated Gate BIP Transistors | 880W | N-CHANNEL | Single | 880W | 234A | 650V | 2.35V | 1.98V | 2.35V @ 15V, 110A | PT | 20V | 6.5V | 400V, 55A, 2 Ω, 15V | 180nC | 600A | 35ns/143ns | 2.3mJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
IXST30N60B2D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Bulk | 2004 | yes | Obsolete | 1 (Unlimited) | 2 | 16.05mm | RoHS Compliant | Lead Free | 48A | 3 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 5.1mm | 14mm | Surface Mount | 4.500005g | -55°C~150°C TJ | 600V | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXS*30N60 | 4 | R-PSSO-G2 | Not Qualified | 250W | 1 | COLLECTOR | N-CHANNEL | Single | 250W | 30 ns | 30 ns | 48A | 600V | 600V | POWER CONTROL | 130 ns | SILICON | 30ns | 2.5V | 80 ns | 2.5V @ 15V, 24A | 436 ns | PT | 400V, 24A, 5 Ω, 15V | 50nC | 90A | 30ns/130ns | 550μJ (off) | |||||||||||||||||||||||||||||
IXGX120N60B | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2004 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 200A | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*120N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 660W | 1 | COLLECTOR | N-CHANNEL | Single | 660W | 60 ns | 200A | 600V | 600V | POWER CONTROL | 200 ns | SILICON | 45ns | 2.1V | 120 ns | 2.1V @ 15V, 120A | 540 ns | PT | 20V | 5.5V | 280ns | 480V, 100A, 2.4 Ω, 15V | 350nC | 300A | 60ns/200ns | 2.4mJ (on), 5.5mJ (off) | |||||||||||||||||||||||||||||||
IXGH60N60 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2000 | yes | Obsolete | Not Applicable | 3 | RoHS Compliant | Lead Free | 75A | No | 3 | TO-247-3 | No SVHC | Through Hole | 6.500007g | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | IXG*60N60 | 3 | Insulated Gate BIP Transistors | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 300W | 50 ns | 75A | 600V | 600V | POWER CONTROL | 30 ns | SILICON | 25ns | 1.7V | 75 ns | 1.7V @ 15V, 60A | 1200 ns | PT | 20V | 1.8 V | 5V | 480V, 60A, 2.7 Ω, 15V | 130nC | 200A | 50ns/300ns | 8mJ (off) | |||||||||||||||||||||||||||||||
IXER35N120D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2004 | Obsolete | Not Applicable | 3 | Through Hole | EAR99 | RoHS Compliant | Lead Free | 50A | 247 | ISOPLUS247™ | No SVHC | Through Hole | 5.3g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | NPN | ISOLATED | Single | 200W | 85 ns | 80 ns | 50A | 1.2kV | 2.8V | POWER CONTROL | 440 ns | SILICON | 50ns | 2.2V | 135 ns | 2.8V @ 15V, 35A | 490 ns | NPT | 20V | 1200V | 6.5V | 600V, 35A, 39 Ω, 15V | 150nC | 5.4mJ (on), 2.6mJ (off) | ||||||||||||||||||||||||||||||
IXSA20N60B2D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Bulk | 2009 | yes | Obsolete | 1 (Unlimited) | 3 | 10.66mm | RoHS Compliant | Lead Free | 35A | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.15mm | 4.82mm | Surface Mount | 1.59999g | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXS*20N60 | 3 | Not Qualified | 190W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 190W | 30 ns | 35A | 600V | 600V | POWER CONTROL | SILICON | 30ns | 2.5V | 60 ns | 2.5V @ 15V, 16A | 390 ns | PT | 480V, 16A, 10 Ω, 15V | 33nC | 60A | 30ns/116ns | 380μJ (off) | |||||||||||||||||||||||||||||||
IXSH30N60B2D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2004 | yes | Obsolete | Not Applicable | 3 | 16.26mm | RoHS Compliant | Lead Free | 48A | 3 | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXS*30N60 | 3 | Not Qualified | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 250W | 30 ns | 30 ns | 48A | 600V | 600V | POWER CONTROL | 130 ns | SILICON | 30ns | 2V | 80 ns | 2.5V @ 15V, 24A | 436 ns | PT | 400V, 24A, 5 Ω, 15V | 50nC | 90A | 30ns/130ns | 550μJ (off) | ||||||||||||||||||||||||||||||
IXGM40N60AL | IXYS | $0.00 |
Min: 1 Mult: 1 |
Obsolete | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGM17N100A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Tube | yes | Obsolete | 1 (Unlimited) | 2 | ROHS3 Compliant | HIGH SPEED | TO-204AE | Through Hole | -55°C~150°C TJ | Standard | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | NO | O-MBFM-P2 | Insulated Gate BIP Transistors | Not Qualified | 150W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 150W | 200ns | POWER CONTROL | SILICON | 150W | 300 ns | 4V @ 15V, 17A | 1450 ns | 20V | 4 V | 1000V | 34A | 5V | 800V, 17A, 82 Ω, 15V | 120nC | 68A | 100ns/500ns | 3mJ (off) | ||||||||||||||||||||||||||||||||||||||||
IXGM25N100A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | yes | Obsolete | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | HIGH SPEED | TO-204AE | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | BOTTOM | PIN/PEG | 260 | 35 | 2 | O-MBFM-P2 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | COLLECTOR | N-CHANNEL | 200W | Single | 200ns | 1kV | POWER CONTROL | SILICON | 200W | 350 ns | 4V @ 15V, 25A | 1520 ns | 20V | 4 V | 1000V | 50A | 5V | 800V, 25A, 33 Ω, 15V | 180nC | 100A | 100ns/500ns | 5mJ (off) | ||||||||||||||||||||||||||||||||||||
IXYX40N450HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | 2014 | XPT™ | Active | 1 (Unlimited) | Non-RoHS Compliant | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | Standard | 660W | 3.9V @ 15V, 40A | 4500V | 95A | 960V, 40A, 2 Ω, 15V | 170nC | 350A | 36ns/110ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGQ96N30TBD1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-3P-3, SC-65-3 | Through Hole | 5.500006g | Standard | 96A | 320V | Trench | 96A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXXH60N65C4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2014 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 455W | N-CHANNEL | Single | 455W | 118A | 650V | 2.2V | 1.8V | 2.2V @ 15V, 60A | PT | 20V | 6.5V | 400V, 60A, 5 Ω, 15V | 94nC | 240A | 37ns/133ns | 3.2mJ (on), 830μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IXXH30N60B3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 270W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 270W | 25ns | 60A | 600V | 600V | POWER CONTROL | SILICON | 1.66V | 57 ns | 1.85V @ 15V, 24A | 292 ns | PT | 20V | 5.5V | 400V, 24A, 10 Ω, 15V | 39nC | 115A | 23ns/97ns | 550μJ (on), 500μJ (off) | ||||||||||||||||||||||||||||||||||||||||
IXGH10N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*10N170 | 3 | Insulated Gate BIP Transistors | Not Qualified | 110W | 110W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 45 ns | 20A | 1.7kV | 1.7kV | POWER CONTROL | 200 ns | SILICON | 300 ns | 4V @ 15V, 10A | 630 ns | NPT | 20V | 1700V | 5V | 32nC | 70A | ||||||||||||||||||||||||||||||||||||
IXGH17N100A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1997 | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | HIGH SPEED | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*17N100 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 34A | 1kV | 4V | POWER CONTROL | SILICON | 300 ns | 4V @ 15V, 17A | 1450 ns | 20V | 4 V | 1000V | 5V | 800V, 17A, 82 Ω, 15V | 100nC | 68A | 100ns/500ns | 3mJ (off) | ||||||||||||||||||||||||||||||||||||
IXGH40N60A3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Through Hole | Tube | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*40N60 | 3 | R-PSFM-T3 | 150°C | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 75A | 600V | MOTOR CONTROL | SILICON | 48 ns | 1180 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGH120N30C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.26mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*120N30 | 3 | Not Qualified | 540W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 540W | 75A | 300V | 300V | POWER CONTROL | SILICON | 1.75V | 66 ns | 2.1V @ 15V, 120A | 233 ns | PT | 200V, 60A, 2 Ω, 15V | 230nC | 600A | 28ns/109ns | 230μJ (on), 730μJ (off) | ||||||||||||||||||||||||||||||||||||
IXGH64N60B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 460W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 600V | 1.8V | POWER CONTROL | SILICON | 64 ns | 1.8V @ 15V, 50A | 326 ns | PT | 20V | 5V | 150ns | 480V, 50A, 3 Ω, 15V | 168nC | 400A | 25ns/138ns | 1.5mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||
IXGH10N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2003 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*10N170 | 3 | Not Qualified | 140W | 140W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 46 ns | 10A | 1.7kV | 1.7kV | MOTOR CONTROL | 190 ns | SILICON | 107 ns | 6V @ 15V, 5A | 240 ns | NPT | 1700V | 850V, 10A, 22 Ω, 15V | 29nC | 20A | 46ns/190ns | 380μJ (off) | ||||||||||||||||||||||||||||||||||||||
IXGH120N30B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*120N30 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 540W | 1 | COLLECTOR | N-CHANNEL | Single | 540W | 75A | 300V | 300V | POWER CONTROL | SILICON | 1.42V | 41 ns | 1.7V @ 15V, 120A | 356 ns | PT | 20V | 5V | 225nC | 480A |
Products