Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Transistor Element Material | Rise Time | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
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IXGK72N60A3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*72N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 540W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 540W | 140ns | 75A | 600V | 1.35V | POWER CONTROL | SILICON | 1.35V | 63 ns | 1.35V @ 15V, 60A | 885 ns | PT | 20V | 5V | 480V, 50A, 3 Ω, 15V | 230nC | 400A | 31ns/320ns | 1.4mJ (on), 3.5mJ (off) | ||||||||||||||||||||||||||
IXBT16N170AHV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tube | 2014 | BIMOSFET™ | Active | 1 | RoHS Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | 150W | 25ns | 6V @ 15V, 10A | 1700V | 16A | 1360V, 10A, 10 Ω, 15V | 65nC | 40A | 15ns/250ns | 2.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IXXR100N60B3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
6 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | 150°C | -55°C | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-247-3 | Through Hole | Standard | SINGLE | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | 400W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 400W | 140 ns | 145A | 600V | 1.8V | POWER CONTROL | 1.5V | 92 ns | 1.8V @ 15V, 70A | 350 ns | PT | 20V | 5.5V | 360V, 70A, 2 Ω, 15V | 143nC | 440A | 30ns/120ns | 1.9mJ (on), 2mJ (off) | ||||||||||||||||||||||||||||||||||
IXGH24N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*24N170 | 3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 250W | 24A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 4.5V | 98 ns | 6V @ 15V, 16A | 275 ns | NPT | 20V | 1700V | 5V | 80ns | 850V, 24A, 10 Ω, 15V | 140nC | 75A | 21ns/336ns | 2.97mJ (on), 790μJ (off) | |||||||||||||||||||||||||||
FID36-06D | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | 5 | HIGH RELIABILITY | i4-Pac™-5 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 5 | Not Qualified | 125W | 125W | 1 | ISOLATED | N-CHANNEL | Single | 50ns | 38A | 600V | 600V | POWER CONTROL | SILICON | 80 ns | 2.4V @ 15V, 25A | 390 ns | NPT | 300V, 25A, 10 Ω, 15V | 140nC | 1.1mJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||
IXGH30N120BD1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Through Hole | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | Standard | IXG*30N120 | 50A | 1.2kV | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYX200N65B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Tube | XPT™, GenX3™ | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 1560W | 108ns | 1.7V @ 15V, 100A | 650V | 410A | 400V, 100A, 0 Ω, 15V | 340nC | 1100A | 60ns/370ns | 5mJ (on), 4mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGX50N120C3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2012 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 460W | 460W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 75 ns | 95A | 1.2kV | 4.2V | POWER CONTROL | SILICON | 60 ns | 4.2V @ 15V, 40A | 485 ns | PT | 20V | 1200V | 5V | 600V, 40A, 2 Ω, 15V | 196nC | 240A | 31ns/123ns | 2mJ (on), 630μJ (off) | ||||||||||||||||||||||||||||
IXGP20N100 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2003 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*20N100 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 40A | 1kV | 1kV | MOTOR CONTROL | SILICON | 3V | 60 ns | 3V @ 15V, 20A | 1220 ns | PT | 20V | 1000V | 5V | 700ns | 800V, 20A, 47 Ω, 15V | 73nC | 80A | 30ns/350ns | 3.5mJ (off) | |||||||||||||||||||||||||||||
IXGK50N60BU1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2000 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-264-3, TO-264AA | Through Hole | 10.000011g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*50N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 50 ns | 75A | 600V | 600V | MOTOR CONTROL | SILICON | 50 ns | 2.5V @ 15V, 50A | 200 ns | 20V | 5.5V | 480V, 50A, 2.7 Ω, 15V | 200nC | 200A | 50ns/110ns | 3mJ (off) | ||||||||||||||||||||||||||||||||
IXGH45N120 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 2001 | yes | Active | 3 | ROHS3 Compliant | Lead Free | 75A | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | 1.2kV | Standard | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 300W | 75A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 28ns | 96 ns | 2.5V @ 15V, 45A | 1400 ns | 20V | 1200V | 5V | 700ns | 960V, 45A, 5 Ω, 15V | 170nC | 180A | 55ns/370ns | 14mJ (off) | |||||||||||||||||||||||||||||
IXA20RG1200DHG-TUB | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | 9-SMD Module | Surface Mount | -55°C~150°C TJ | Standard | 125W | 2.1V @ 15V, 15A | PT | 1200V | 32A | 600V, 15A, 56 Ω, 15V | 48nC | 1.55mJ (on), 1.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYH8N250C | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | 2017 | XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 280W | 5ns | 4V @ 15V, 8A | 2500V | 29A | 1250V, 8A, 15 Ω, 15V | 45nC | 70A | 11ns/180ns | 2.6mJ (on), 1.07mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGX400N30A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*400N30 | 3 | Insulated Gate BIP Transistors | Not Qualified | 1kW | 1000W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 400A | 300V | 1.15V | POWER CONTROL | SILICON | 100 ns | 1.15V @ 15V, 100A | 555 ns | PT | 20V | 5V | 560nC | 1200A | ||||||||||||||||||||||||||||||||
IXYH12N250C | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | 2017 | XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 310W | 16ns | 4.5V @ 15V, 12A | 2500V | 28A | 1250V, 12A, 10 Ω, 15V | 56nC | 80A | 12ns/167ns | 3.56mJ (on), 1.7mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGT32N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2004 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*32N170 | 4 | R-PSSO-G2 | Not Qualified | 350W | 350W | 1 | COLLECTOR | N-CHANNEL | Single | 32A | 1.7kV | 1.7kV | MOTOR CONTROL | SILICON | 4V | 107 ns | 5V @ 15V, 21A | 370 ns | NPT | 1700V | 850V, 32A, 2.7 Ω, 15V | 155nC | 110A | 46ns/260ns | 1.5mJ (off) | |||||||||||||||||||||||||||||
IXGK35N120CD1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2002 | HiPerFAST™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | IXG*35N120 | 3 | Not Qualified | 350W | 350W | 1 | COLLECTOR | N-CHANNEL | Single | 60ns | 70A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 86 ns | 4V @ 15V, 35A | 480 ns | 1200V | 960V, 35A, 5 Ω, 15V | 170nC | 140A | 50ns/150ns | 3mJ (off) | ||||||||||||||||||||||||||||||||||||||
IXGK120N60B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
1 Weeks | GenX3™ | yes | Active | 3 | RoHS Compliant | TO-264-3, TO-264AA | compliant | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 780W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 780W | 87ns | POWER CONTROL | SILICON | 123 ns | 1.8V @ 15V, 100A | 520 ns | PT | 20V | 600V | 280A | 5V | 480V, 100A, 2 Ω, 15V | 465nC | 600A | 40ns/227ns | 2.9mJ (on), 3.5mJ (off) | ||||||||||||||||||||||||||||||||||||
IXXX200N60B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Tube | XPT™, GenX3™ | Active | 3 | RoHS Compliant | AVALANCHE RATED | TO-247-3 | not_compliant | Through Hole | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | 3 | NO | R-PSIP-T3 | Insulated Gate BIP Transistors | 1630W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 1630W | 100ns | POWER CONTROL | SILICON | 140 ns | 1.7V @ 15V, 100A | 395 ns | 20V | 600V | 380A | 6V | 360V, 100A, 1 Ω, 15V | 315nC | 900A | 48ns/160ns | 2.85mJ (on), 4.4mJ (off) | ||||||||||||||||||||||||||||||||||||
IXYK30N170CV1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
28 Weeks | XPT™ | Active | TO-264-3, TO-264AA | compliant | Through Hole | -55°C~175°C TJ | Standard | 937W | 33ns | 4V @ 15V, 30A | PT | 1700V | 100A | 850V, 30A, 2.7 Ω, 15V | 150nC | 250A | 16ns/143ns | 3.6mJ (on), 1.8mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYX100N65B3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2014 | GenX3™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 830W | 830W | 156 ns | 225A | 650V | 1.85V | 1.85V @ 15V, 70A | PT | 400V, 50A, 3 Ω, 15V | 168nC | 460A | 29ns/150ns | 1.27mJ (on), 1.37mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
IXGK400N30B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
18 Weeks | Through Hole | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-264-3, TO-264AA | Through Hole | 10.000011g | Standard | IXG*400N30 | 400A | 300V | 400A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYX100N120B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | EAR99 | 16.13mm | ROHS3 Compliant | 247 | TO-247-3 | unknown | 21.34mm | 5.21mm | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 1.15kW | 1150W | N-CHANNEL | Single | 225A | 1.2kV | 2.6V | 2.6V @ 15V, 100A | PT | 20V | 1200V | 5V | 600V, 100A, 1 Ω, 15V | 250nC | 530A | 30ns/153ns | 7.7mJ (on), 7.1mJ (off) | ||||||||||||||||||||||||||||||||||||||||
IXBH28N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2005 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 300W | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 360 ns | 30A | 1.7kV | 6V | POWER CONTROL | SILICON | 4.7V | 6V @ 15V, 14A | 1700V | 850V, 14A, 10 Ω, 15V | 105nC | 60A | 35ns/265ns | 1.2mJ (off) | ||||||||||||||||||||||||||||||||||||
IXGK55N120A3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2010 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | ULTRA FAST, LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 460W | 460W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 200 ns | 125A | 1.2kV | 2.3V | POWER CONTROL | SILICON | 70 ns | 2.3V @ 15V, 55A | 1253 ns | PT | 20V | 1200V | 5V | 960V, 55A, 3 Ω, 15V | 185nC | 400A | 23ns/365ns | 5.1mJ (on), 13.3mJ (off) | ||||||||||||||||||||||||||||
IXA70R1200NA | IXYS | $0.00 |
Min: 1 Mult: 1 |
28 Weeks | XPT™ | Active | SOT-227-4, miniBLOC | compliant | Chassis Mount | Standard | 350W | 2.1V @ 15V, 50A | PT | 1200V | 100A | 600V, 50A, 15 Ω, 15V | 190nC | 70ns/250ns | 4.5mJ (on), 5.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXBT24N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2013 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 1.06 μs | 60A | 1.7kV | 2.5V | POWER CONTROL | SILICON | 190 ns | 2.5V @ 15V, 24A | 1285 ns | 20V | 1700V | 5V | 140nC | 230A | ||||||||||||||||||||||||||||||
IXYH8N250CV1HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | 2017 | XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 280W | 5ns | 4V @ 15V, 8A | 2500V | 29A | 1250V, 8A, 15 Ω, 15V | 45nC | 70A | 11ns/180ns | 2.6mJ (on), 1.07mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYH16N250C | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | 2017 | XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 500W | 19ns | 4V @ 15V, 16A | 2500V | 35A | 1250V, 16A, 10 Ω, 15V | 97nC | 126A | 14ns/260ns | 4.75mJ (on), 3.9mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXXX100N60C3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Through Hole | Tube | GenX3™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | not_compliant | Through Hole | Standard | e3 | Matte Tin (Sn) | 150°C | Insulated Gate BIP Transistors | 695W | 695W | N-CHANNEL | 140 ns | 170A | 600V | 2.2V | 2.2V @ 15V, 70A | PT | 20V | 5.5V | 360V, 70A, 2 Ω, 15V | 150nC | 340A | 30ns/90ns | 2mJ (on), 950μJ (off) |
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