Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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NVMFS6H818NWFT1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | Tape & Reel (TR) | 2015 | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | 8-PowerTDFN, 5 Leads | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W Ta 136W Tc | 0.0037Ohm | 80V | SILICON | N-Channel | 3.7m Ω @ 20A, 10V | 4V @ 190μA | 3100pF @ 40V | 46nC @ 10V | 20A | 20A Ta 123A Tc | 80V | 900A | 731 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
FQP3P50 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2017 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | Tin | -2.7A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 4.9Ohm | Through Hole | 1.8g | -55°C~150°C TJ | -500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Other Transistors | 1 | TO-220AB | Single | 85W | 12 ns | 85W Tc | 2.7A | SWITCHING | 35 ns | SILICON | P-Channel | 4.9 Ω @ 1.35A, 10V | 5V @ 250μA | 660pF @ 25V | 23nC @ 10V | 56ns | 45 ns | 30V | -500V | -500V | -5 V | 2.7A Tc | 500V | 250 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||
FDP3682 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2002 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 32A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.83mm | 36MOhm | Through Hole | 1.8g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 95W | 9 ns | 4V | 95W Tc | 55 ns | 32A | SWITCHING | 26 ns | SILICON | N-Channel | 36m Ω @ 32A, 10V | 4V @ 250μA | 1250pF @ 25V | 28nC @ 10V | 46ns | 32 ns | 20V | 100V | 6A | 6A Ta 32A Tc | 55 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||
FQPF27P06 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | 2001 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | -17A | No | 3 | TO-220-3 Full Pack | No SVHC | 16.3mm | 4.7mm | 70MOhm | Through Hole | 2.27g | -55°C~175°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | Other Transistors | 1 | ISOLATED | Single | 47W | 18 ns | -2V | 47W Tc | 17A | SWITCHING | 30 ns | SILICON | P-Channel | 70m Ω @ 8.5A, 10V | 4V @ 250μA | 1400pF @ 25V | 43nC @ 10V | 185ns | 90 ns | 25V | -60V | 17A Tc | 60V | 68A | 560 mJ | 10V | ±25V | ||||||||||||||||||||||||||||||
FDPF190N15A | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 33W | 18 ns | 33W Tc | 27.4A | SWITCHING | 32 ns | SILICON | N-Channel | 19m Ω @ 27.4A, 10V | 4V @ 250μA | 2685pF @ 25V | 39nC @ 10V | 16ns | 8 ns | 20V | 150V | 27.4A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
FDP18N50 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | Tin | 18A | No | 3 | FAST SWITCHING | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 265MOhm | Through Hole | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 18A | e3 | FET General Purpose Power | 500V | 1 | TO-220AB | Single | 235W | 55 ns | 5V | 235W Tc | 18A | SWITCHING | 95 ns | SILICON | N-Channel | 265m Ω @ 9A, 10V | 5V @ 250μA | 2860pF @ 25V | 60nC @ 10V | 165ns | 90 ns | 30V | 500V | 18A Tc | 945 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||
FDPF18N50T | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | 18A | 3 | TO-220-3 Full Pack | not_compliant | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | ISOLATED | Single | 38.5W | 55 ns | 38.5W Tc | 18A | SWITCHING | 0.265Ohm | 95 ns | SILICON | N-Channel | 265m Ω @ 9A, 10V | 5V @ 250μA | 2860pF @ 25V | 60nC @ 10V | 165ns | 90 ns | 30V | 500V | 18A Tc | 72A | 945 mJ | 10V | ±30V | |||||||||||||||||||||||||||||
FDBL0065N40 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | 2013 | PowerTrench® | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-PowerSFN | not_compliant | Surface Mount | 850.0521mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | 245 | NOT SPECIFIED | 1 | MO-299A | DRAIN | Single | 429W Tj | 300A | SWITCHING | 0.00065Ohm | 40V | SILICON | N-Channel | 0.65m Ω @ 80A, 10V | 4V @ 250μA | 15900pF @ 25V | 296nC @ 10V | 300A Tc | 40V | 1064 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
FDPF16N50T | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 10.36mm | ROHS3 Compliant | Lead Free | 16A | 3 | TO-220-3 Full Pack | No SVHC | not_compliant | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | e3 | Tin (Sn) | FET General Purpose Power | 1 | Single | 52W | 40 ns | 5V | 38.5W Tc | 16A | 65 ns | N-Channel | 380m Ω @ 8A, 10V | 5V @ 250μA | 1945pF @ 25V | 45nC @ 10V | 150ns | 80 ns | 30V | 500V | 16A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
FQP17N40 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 16A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 270mOhm | Through Hole | 1.8g | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 170W | 40 ns | 5V | 170W Tc | 16A | SWITCHING | 90 ns | SILICON | N-Channel | 270m Ω @ 8A, 10V | 5V @ 250μA | 2300pF @ 25V | 60nC @ 10V | 185ns | 105 ns | 30V | 400V | 5 V | 16A Tc | 64A | 10V | ±30V | |||||||||||||||||||||||||||||||
FDP20N50 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2004 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 230MOhm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | TO-220AB | Single | 250W | 95 ns | 5V | 250W Tc | 20A | SWITCHING | 100 ns | SILICON | N-Channel | 230m Ω @ 10A, 10V | 5V @ 250μA | 3120pF @ 25V | 59.5nC @ 10V | 375ns | 105 ns | 30V | 500V | 20A Tc | 80A | 10V | ±30V | |||||||||||||||||||||||||||||||||
FDP52N20 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2007 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | Tin | 52A | No | 3 | AVALANCHE ENERGY RATED | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 49MOhm | Through Hole | 1.8g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | TO-220AB | Single | 357W | 53 ns | 5V | 357W Tc | 52A | SWITCHING | 48 ns | SILICON | N-Channel | 49m Ω @ 26A, 10V | 5V @ 250μA | 2900pF @ 25V | 63nC @ 10V | 175ns | 29 ns | 30V | 200V | 52A Tc | 208A | 2520 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||
FQA70N10 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | ACTIVE (Last Updated: 7 hours ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | 70A | No | 3 | TO-3P-3, SC-65-3 | No SVHC | 18.9mm | 5mm | 23mOhm | Through Hole | 6.401g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | Single | 214W | 30 ns | 4V | 214W Tc | 70A | SWITCHING | 130 ns | SILICON | N-Channel | 23m Ω @ 35A, 10V | 4V @ 250μA | 3300pF @ 25V | 110nC @ 10V | 470ns | 160 ns | 25V | 100V | 100V | 4 V | 70A Tc | 280A | 10V | ±25V | |||||||||||||||||||||||||||||||
FDA24N40F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.2mm | ROHS3 Compliant | Lead Free | 3 | TO-3P-3, SC-65-3 | No SVHC | 20.1mm | 5mm | 190MOhm | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | Single | 235W | 40 ns | 3V | 235W Tc | 23A | SWITCHING | 120 ns | SILICON | N-Channel | 190m Ω @ 11.5A, 10V | 5V @ 250μA | 3030pF @ 25V | 60nC @ 10V | 92ns | 75 ns | 30V | 400V | 23A Tc | 92A | 10V | ±30V | |||||||||||||||||||||||||||||||||
FDP045N10A-F102 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
9 Weeks | Tube | PowerTrench® | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NO | FET General Purpose Power | Single | 263W Tc | N-Channel | 4.5m Ω @ 100A, 10V | 4V @ 250μA | 5270pF @ 50V | 74nC @ 10V | 120A | 120A Tc | 100V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FCP20N60 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE, NOT REC (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | SuperFET™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 20A | No | 3 | TO-220-3 | No SVHC | 16.3mm | 4.7mm | 190MOhm | Through Hole | 1.8g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 1 | TO-220AB | Single | 208W | 62 ns | 5V | 208W Tc | 20A | SWITCHING | 230 ns | SILICON | N-Channel | 190m Ω @ 10A, 10V | 5V @ 250μA | 3080pF @ 25V | 98nC @ 10V | 140ns | 65 ns | 30V | 600V | 5 V | 20A Tc | 60A | 690 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||
FDB047N10 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | 2012 | PowerTrench® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 11.33mm | 4.7MOhm | Surface Mount | 1.762g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 375W | 174 ns | 3.5V | 375W Tc | 120A | SWITCHING | 344 ns | SILICON | N-Channel | 4.7m Ω @ 75A, 10V | 4.5V @ 250μA | 15265pF @ 25V | 210nC @ 10V | 386ns | 244 ns | 20V | 100V | 3.5 V | 120A Tc | 656A | 10V | ±20V | |||||||||||||||||||||||||||||||
FCB36N60NTM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | 2013 | SupreMOS™ | yes | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 11.33mm | 90MOhm | Surface Mount | 1.762g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FCB36N60 | FET General Purpose Power | 1 | Single | 312W | 23 ns | 2V | 312W Tc | 36A | 94 ns | N-Channel | 90m Ω @ 18A, 10V | 4V @ 250μA | 4785pF @ 100V | 112nC @ 10V | 22ns | 4 ns | 20V | 600V | 36A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
FCP067N65S3 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | SuperFET® III | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-220-3 | No SVHC | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 8541.29.00.95 | e3 | Tin (Sn) | Single | 4.5V | 312W Tc | 44A | N-Channel | 67m Ω @ 22A, 10V | 4.5V @ 4.4mA | 3090pF @ 400V | 78nC @ 10V | 44A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
FCH22N60N | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | 2008 | SupreMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.95mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | No SVHC | not_compliant | 21mm | 5.03mm | Through Hole | 6.39g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | Single | 205W | 16.9 ns | 3V | 205W Tc | 22A | SWITCHING | 49 ns | SILICON | N-Channel | 165m Ω @ 11A, 10V | 4V @ 250μA | 1950pF @ 100V | 45nC @ 10V | 16.7ns | 4 ns | 30V | 600V | 22A Tc | 66A | 672 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||
FDMA7632 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | PowerTrench® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2mm | ROHS3 Compliant | No | 6 | 6-VDFN Exposed Pad | No SVHC | 850μm | 2mm | Surface Mount | 30mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 1 | FET General Purpose Power | 1 | DRAIN | Single | 900mW | 6 ns | 1V | 2.4W Ta | 9A | 150°C | SWITCHING | 14 ns | SILICON | N-Channel | 19m Ω @ 9A, 10V | 3V @ 250μA | 760pF @ 15V | 13nC @ 10V | 2ns | 2 ns | 20V | 30V | 2.1 V | 9A | 9A Ta | 40 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
FDMC2523P | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | 2006 | QFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | Tin | -3A | No | 8 | 8-PowerWDFN | No SVHC | 800μm | 3mm | 1.5Ohm | Surface Mount | 210mg | -55°C~150°C TJ | -150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | FLAT | S-PDSO-F5 | 1 | Other Transistors | 1 | DRAIN | Single | 42W | 15 ns | 3.8V | 42W Tc | 3A | 150°C | SWITCHING | 19 ns | SILICON | P-Channel | 1.5 Ω @ 1.5A, 10V | 5V @ 250μA | 270pF @ 25V | 9nC @ 10V | 11ns | 13 ns | 30V | -150V | 3A | 3A Tc | 150V | 10V | ±30V | |||||||||||||||||||||||||
FDS6298 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | 2007 | PowerTrench® | yes | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 5mm | ROHS3 Compliant | Lead Free | 13A | No | 8 | FAST SWITCHING | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | 15MOhm | Surface Mount | 130mg | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 3W | 11 ns | 1.7V | 3W Ta | 13A | SWITCHING | 27 ns | SILICON | N-Channel | 9m Ω @ 13A, 10V | 3V @ 250μA | 1108pF @ 15V | 14nC @ 5V | 5ns | 7 ns | 20V | 30V | 30V | 1.7 V | 13A Ta | 50A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
FDMS8025S | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | 2010 | PowerTrench®, SyncFET™ | yes | Active | 1 (Unlimited) | 5 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 1.05mm | 6mm | 2.8MOhm | Surface Mount | 68.1mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | R-PDSO-F5 | FET General Purpose Power | 1 | MO-240AA | DRAIN | Single | 50W | 11 ns | 1.7V | 2.5W Ta 50W Tc | 49A | SWITCHING | 29 ns | SILICON | N-Channel | 2.8m Ω @ 24A, 10V | 3V @ 1mA | 3000pF @ 15V | 47nC @ 10V | 4.5ns | 3.7 ns | 20V | 30V | 24A | 24A Ta 49A Tc | 100A | 66 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
FDC8601 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Surface Mount | Tape & Reel (TR) | PowerTrench® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 1mm | 1.7mm | Surface Mount | 36mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 1.6W | 4.5 ns | 3V | 1.6W Ta | 2.7A | SWITCHING | 7.6 ns | SILICON | N-Channel | 109m Ω @ 2.7A, 10V | 4V @ 250μA | 210pF @ 50V | 5nC @ 10V | 1.3ns | 2 ns | 20V | 100V | 3 V | 2.7A Ta | 5 pF | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
FQD4P40TM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | QFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | Tin | -2.7A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 260.37mg | -55°C~150°C TJ | -400V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | Other Transistors | 1 | DRAIN | Single | 2.5W | 13 ns | 2.5W Ta 50W Tc | 2.7A | SWITCHING | 35 ns | SILICON | P-Channel | 3.1 Ω @ 1.35A, 10V | 5V @ 250μA | 680pF @ 25V | 23nC @ 10V | 55ns | 37 ns | 30V | -400V | 2.7A Tc | 400V | 260 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
FDS6575 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | 2001 | PowerTrench® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | -10A | No | 8 | LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | 13MOhm | Surface Mount | 130mg | -55°C~175°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Other Transistors | 1 | Single | 2.5W | 16 ns | 2.5W Ta | 10A | SWITCHING | 196 ns | SILICON | P-Channel | 13m Ω @ 10A, 4.5V | 1.5V @ 250μA | 4951pF @ 10V | 74nC @ 4.5V | 9ns | 78 ns | 8V | -20V | -600 mV | 10A Ta | 20V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||
FQD1N80TM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | 2001 | QFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.6mm | ROHS3 Compliant | Lead Free | Tin | 1A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3mm | 6.1mm | 20Ohm | Surface Mount | 260.37mg | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 2.5W | 10 ns | 5V | 2.5W Ta 45W Tc | 1mA | SWITCHING | 15 ns | SILICON | N-Channel | 20 Ω @ 500mA, 10V | 5V @ 250μA | 195pF @ 25V | 7.2nC @ 10V | 25ns | 25 ns | 30V | 800V | 5 V | 1A | 1A Tc | 4A | 90 mJ | 10V | ±30V | |||||||||||||||||||||||||||
FDT86113LZ | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 12 hours ago) | Surface Mount | Tape & Reel (TR) | 2011 | PowerTrench® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 3.7mm | ROHS3 Compliant | Lead Free | Tin | No | 4 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-261-4, TO-261AA | No SVHC | 1.7mm | 6.7mm | Surface Mount | 250.2mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | FET General Purpose Power | 1 | DRAIN | Single | 2.2W | 3.8 ns | 1.7V | 2.2W Ta | 3.3A | SWITCHING | 10 ns | SILICON | N-Channel | 100m Ω @ 3.3A, 10V | 2.5V @ 250μA | 315pF @ 50V | 6.8nC @ 10V | 1.3ns | 1.5 ns | 20V | 100V | 3.3A Tc | 5 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
FDD6N20TM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 19 hours ago) | Surface Mount | Tape & Reel (TR) | UniFET™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 800mOhm | Surface Mount | 260.37mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | Single | 40W | 8.3 ns | 5V | 40W Tc | 4.5A | SWITCHING | 15 ns | SILICON | N-Channel | 800m Ω @ 2.3A, 10V | 5V @ 250μA | 230pF @ 25V | 6.1nC @ 10V | 5.6ns | 12.8 ns | 30V | 200V | 4.5A Tc | 60 mJ | 10V | ±30V |
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