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ON Semiconductor(36350)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ATP405-TL-H | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 2 Weeks | ACTIVE (Last Updated: 3 days ago) | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | ATPAK (2 leads+tab) | not_compliant | 33mOhm | Surface Mount | 150°C TJ | MOSFET (Metal Oxide) | e6 | Tin/Bismuth (Sn/Bi) | 3 | Halogen Free | Single | 70W | 38 ns | 70W Tc | 40A | 220 ns | N-Channel | 33m Ω @ 20A, 10V | 4000pF @ 20V | 68nC @ 10V | 125ns | 150 ns | 20V | 100V | 40A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FCH25N60N | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 12 hours ago) | Through Hole | Tube | 2013 | SupreMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | No | 3 | TO-247-3 | No SVHC | 20.82mm | 4.82mm | Through Hole | 6.39g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-247AB | Single | 216W | 21 ns | 2V | 216W Tc | 25A | SWITCHING | 68 ns | SILICON | N-Channel | 126m Ω @ 12.5A, 10V | 4V @ 250μA | 3352pF @ 100V | 74nC @ 10V | 22ns | 5 ns | 30V | 600V | 25A Tc | 75A | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| MCH3333A-TL-W | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 8 hours ago) | Surface Mount | Cut Tape (CT) | 2017 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | 70 | 3-SMD, Flat Lead | No SVHC | not_compliant | Surface Mount | 150°C TJ | MOSFET (Metal Oxide) | e6 | Tin/Bismuth (Sn/Bi) | 5.7 ns | -1.3V | 900mW Ta | 2A | 27 ns | P-Channel | 215m Ω @ 1A, 4V | 1.3V @ 1mA | 240pF @ 10V | 2.8nC @ 4V | 9.7ns | 16 ns | 10V | 2A Ta | 30V | 1.8V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NVTR01P02LT1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 15 hours ago) | Tape & Reel (TR) | 2006 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | 3 | YES | Other Transistors | 1 | Single | 400mW | 7 ns | 400mW Ta | 1.3A | SWITCHING | 0.22Ohm | 20V | 18 ns | P-Channel | 220m Ω @ 750mA, 4.5V | 1.25V @ 250μA | 225pF @ 5V | 3.1nC @ 4V | 15ns | 20 ns | 12V | 1.3A Ta | 20V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| MCH6353-TL-W | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 5 days ago) | Tape & Reel (TR) | yes | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | 6 | 6-SMD, Flat Leads | Surface Mount | 7.512624mg | 150°C TJ | MOSFET (Metal Oxide) | 6 | 1 | Halogen Free | Single | 1.4W | 8.4 ns | 1.4W Ta | 6A | 165 ns | P-Channel | 35m Ω @ 3A, 4.5V | 1250pF @ 6V | 12nC @ 4.5V | 48ns | 68 ns | 10V | -12V | 6A Ta | 12V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CPH3350-TL-W | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 5 days ago) | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | not_compliant | Surface Mount | 1.437803g | 150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e6 | Tin/Bismuth (Sn/Bi) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 1W | 8.1 ns | 1W Ta | 3A | SWITCHING | 42 ns | SILICON | P-Channel | 83m Ω @ 1.5A, 4.5V | 375pF @ 10V | 4.6nC @ 4.5V | 26ns | 37 ns | 10V | -20V | 3A | 3A Ta | 20V | 1.8V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||
| NTJS4405NT1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 2 Weeks | ACTIVE (Last Updated: 1 day ago) | Tape & Reel (TR) | 2006 | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2.2mm | ROHS3 Compliant | Lead Free | 1.2A | No | 6 | 6-TSSOP, SC-88, SOT-363 | 1mm | 1.35mm | Surface Mount | -55°C~150°C TJ | 25V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 40 | 6 | YES | FET General Purpose Power | 1 | Single | 630mW | 6 ns | 630mW Ta | 1.2A | SWITCHING | 0.35Ohm | 25 ns | SILICON | N-Channel | 350m Ω @ 600mA, 4.5V | 1.5V @ 250μA | 60pF @ 10V | 1.5nC @ 4.5V | 4.7ns | 4.7 ns | 8V | 25V | 1A | 1A Ta | 2.7V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| FCP150N65F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2017 | HiPerFET™, Polar™ | yes | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | 3 | TO-220-3 | 16.3mm | 4.7mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Single | 28 ns | 298W Tc | 24A | 73 ns | N-Channel | 150m Ω @ 12A, 10V | 5V @ 2.4mA | 3737pF @ 100V | 93nC @ 10V | 15ns | 6 ns | 20V | 650V | 24A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FQA11N90-F109 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 16 hours ago) | Through Hole | Tube | QFET® | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-3P-3, SC-65-3 | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | Single | 300W | 65 ns | 300W Tc | 11.4A | SWITCHING | 0.96Ohm | 165 ns | SILICON | N-Channel | 960m Ω @ 5.7A, 10V | 5V @ 250μA | 3500pF @ 25V | 94nC @ 10V | 135ns | 90 ns | 30V | 900V | 11.4A Tc | 45.6A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FCP104N60F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | HiPerFET™, Polar™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | 3 | TO-220-3 | 15.215mm | 4.672mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 34 ns | 357W Tc | 37A | SWITCHING | 102 ns | SILICON | N-Channel | 104m Ω @ 18.5A, 10V | 5V @ 250μA | 6130pF @ 25V | 145nC @ 10V | 50ns | 21.4 ns | 5V | 600V | 37A Tc | 809 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FCA20N60F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | SuperFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.2mm | ROHS3 Compliant | Lead Free | 3 | TO-3P-3, SC-65-3 | 20.1mm | 5mm | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FCA20N60 | FET General Purpose Power | Not Qualified | 1 | Single | 208W | 62 ns | 208W Tc | 20A | SWITCHING | 230 ns | SILICON | N-Channel | 190m Ω @ 10A, 10V | 5V @ 250μA | 3080pF @ 25V | 98nC @ 10V | 140ns | 65 ns | 30V | 600V | 20A Tc | 60A | 690 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FDP025N06 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2013 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 9.9mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 15.7mm | 4.5mm | 2.5MOhm | Through Hole | 2.421g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 395W | 134 ns | 3.5V | 395W Tc | 265A | SWITCHING | 348 ns | SILICON | N-Channel | 2.5m Ω @ 75A, 10V | 4.5V @ 250μA | 14885pF @ 25V | 226nC @ 10V | 324ns | 250 ns | 20V | 60V | 3.5 V | 120A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTHL095N65S3HF | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | FRFET®, SuperFET® III | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 272W Tc | N-Channel | 95m Ω @ 18A, 10V | 5V @ 860μA | 2930pF @ 400V | 66nC @ 10V | 36A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH067N65S3-F155 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 5 days ago) | Through Hole | Tube | SuperFET® III | yes | Active | 1 (Unlimited) | ROHS3 Compliant | 3 | TO-247-3 | No SVHC | not_compliant | Through Hole | 6.39g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | Single | 4.5V | 312W Tc | 44A | N-Channel | 67m Ω @ 22A, 10V | 4.5V @ 4.4mA | 3090pF @ 400V | 78nC @ 10V | Super Junction | 44A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDI045N10A-F102 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
9 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | PowerTrench® | yes | Active | 1 (Unlimited) | 10.29mm | ROHS3 Compliant | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.65mm | 4.83mm | Through Hole | 2.084g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | Single | 263W | 23 ns | 263W Tc | 120A | 50 ns | N-Channel | 4.5m Ω @ 100A, 10V | 4V @ 250μA | 5270pF @ 50V | 74nC @ 10V | 26ns | 15 ns | 20V | 100V | 120A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQA10N80C-F109 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 16 hours ago) | Through Hole | Tube | QFET® | yes | Active | 1 (Unlimited) | 3 | 15.8mm | ROHS3 Compliant | Lead Free | 3 | TO-3P-3, SC-65-3 | No SVHC | 18.9mm | 5mm | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | Single | 240W | 50 ns | 5V | 240W Tc | 10A | SWITCHING | 90 ns | SILICON | N-Channel | 1.1 Ω @ 5A, 10V | 5V @ 250μA | 2800pF @ 25V | 58nC @ 10V | 130ns | 80 ns | 30V | 800V | 10A Tc | 40A | 920 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| FDA20N50-F109 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | UniFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | FAST SWITCHING | TO-3P-3, SC-65-3 | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | Single | 280W | 95 ns | 280W Tc | 22A | SWITCHING | 100 ns | SILICON | N-Channel | 230m Ω @ 11A, 10V | 5V @ 250μA | 3120pF @ 25V | 59.5nC @ 10V | 375ns | 105 ns | 30V | 500V | 22A Tc | 88A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FCP16N60N | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2009 | SupreMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | 9.4mm | 4.83mm | 199mOhm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 134.4W | 15.8 ns | 2V | 134.4W Tc | 16A | SWITCHING | 60.3 ns | SILICON | N-Channel | 199m Ω @ 8A, 10V | 4V @ 250μA | 2170pF @ 100V | 52.3nC @ 10V | 15.5ns | 20.2 ns | 30V | 600V | 2 V | 16A Tc | 48A | 10V | ±30V | |||||||||||||||||||||||||||||
| FCH47N60F-F085 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | ACTIVE, NOT REC (Last Updated: 1 week ago) | Through Hole | Tube | Automotive, AEC-Q101, SuperFET™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | not_compliant | Through Hole | 6.39g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FCH47N60 | FET General Purpose Power | 1 | Single | 110 ns | 417W Tc | 47A | SWITCHING | 0.075Ohm | 600V | 540 ns | SILICON | N-Channel | 75m Ω @ 47A, 10V | 5V @ 250μA | 8000pF @ 25V | 250nC @ 10V | 160ns | 125 ns | 30V | 47A Tc | 600V | 810 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| NTK3139PT5G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | ACTIVE (Last Updated: 2 days ago) | Tape & Reel (TR) | 2006 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | SOT-723 | 380mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | 3 | YES | Other Transistors | 1 | Single | 310mW | 9 ns | 310mW Ta | -780mA | SWITCHING | 32.7 ns | SILICON | P-Channel | 480m Ω @ 780mA, 4.5V | 1.2V @ 250μA | 170pF @ 16V | 5.8ns | 5.8 ns | 6V | -20V | 0.66A | 660mA Ta | 20V | 1.2A | 1.5V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||
| FDC640P | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Surface Mount | Tape & Reel (TR) | 2001 | PowerTrench® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | -4.5A | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 1mm | 1.7mm | 53mOhm | Surface Mount | 36mg | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | Other Transistors | 1 | Single | 1.6W | 12 ns | -1V | 1.6W Ta | 4.5mA | SWITCHING | 24 ns | SILICON | P-Channel | 53m Ω @ 4.5A, 4.5V | 1.5V @ 250μA | 890pF @ 10V | 13nC @ 4.5V | 9ns | 13 ns | 12V | -20V | -1 V | 4.5A Ta | 20V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||
| FDMS8820 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | PowerTrench® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | 1.05mm | 6mm | Surface Mount | 68.1mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | R-PDSO-F5 | FET General Purpose Power | 1 | MO-240AA | DRAIN | Single | 78W | 14 ns | 2.5W Ta 78W Tc | 116A | SWITCHING | 0.002Ohm | 41 ns | SILICON | N-Channel | 2m Ω @ 28A, 10V | 2.5V @ 250μA | 5315pF @ 15V | 88nC @ 10V | 16ns | 13 ns | 20V | 30V | 28A Ta 116A Tc | 294 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| FDP2710 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | 16.51mm | 4.83mm | 42.5MOhm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 260W | 80 ns | 260W Tc | 50A | SWITCHING | 112 ns | SILICON | N-Channel | 42.5m Ω @ 25A, 10V | 5V @ 250μA | 7280pF @ 25V | 101nC @ 10V | 252ns | 154 ns | 30V | 250V | 50A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||
| FQP22N30 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 21A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 160MOhm | Through Hole | 1.8g | -55°C~150°C TJ | 300V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 170W | 35 ns | 5V | 170W Tc | 21A | SWITCHING | 85 ns | SILICON | N-Channel | 160m Ω @ 10.5A, 10V | 5V @ 250μA | 2200pF @ 25V | 60nC @ 10V | 230ns | 100 ns | 30V | 300V | 5 V | 21A Tc | 84A | 10V | ±30V | |||||||||||||||||||||||||||||
| FQA70N15 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | 70A | No | 3 | TO-3P-3, SC-65-3 | No SVHC | 18.9mm | 5mm | Through Hole | 6.401g | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | Single | 330W | 60 ns | 4V | 330W Tc | 70A | SWITCHING | 0.028Ohm | 340 ns | SILICON | N-Channel | 28m Ω @ 35A, 10V | 4V @ 250μA | 5400pF @ 25V | 175nC @ 10V | 420ns | 290 ns | 25V | 150V | 70A Tc | 280A | 10V | ±25V | |||||||||||||||||||||||||||||||
| HUF75345G3 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2009 | UltraFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | TO-247-3 | No SVHC | 20.82mm | 4.82mm | 7mOhm | Through Hole | 6.39g | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | DRAIN | Single | 325W | 14 ns | 4V | 325W Tc | 75A | SWITCHING | 42 ns | SILICON | N-Channel | 7m Ω @ 75A, 10V | 4V @ 250μA | 4000pF @ 25V | 275nC @ 20V | 118ns | 26 ns | 20V | 55V | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||
| FDA28N50F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | 20.1mm | 5mm | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | FET General Purpose Power | 1 | Single | 310W | 67 ns | 310W Tc | 28A | SWITCHING | 0.175Ohm | 192 ns | SILICON | N-Channel | 175m Ω @ 14A, 10V | 5V @ 250μA | 5387pF @ 25V | 105nC @ 10V | 137ns | 101 ns | 30V | 500V | 28A Tc | 112A | 10V | ±30V | |||||||||||||||||||||||||||||||||
| FDA28N50 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | Tin | No | 2 | TO-3P-3, SC-65-3 | 20.1mm | 5mm | 155MOhm | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | R-PSFM-T3 | FET General Purpose Power | 1 | Single | 310W | 56 ns | 310W Tc | 28A | SWITCHING | 210 ns | SILICON | N-Channel | 155m Ω @ 14A, 10V | 5V @ 250μA | 5140pF @ 25V | 105nC @ 10V | 126ns | 110 ns | 30V | 500V | 28A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| FQA30N40 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | Tin | 30A | No | 3 | TO-3P-3, SC-65-3 | 6.35mm | 6.35mm | 140MOhm | Through Hole | 6.401g | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | Single | 290W | 80 ns | 290W Tc | 30A | SWITCHING | 190 ns | SILICON | N-Channel | 140m Ω @ 15A, 10V | 5V @ 250μA | 4400pF @ 25V | 120nC @ 10V | 320ns | 170 ns | 30V | 400V | 30A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FQA90N15-F109 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | QFET® | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-3P-3, SC-65-3 | Through Hole | 6.401g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | Single | 6W | 105 ns | 375W Tc | 90A | SWITCHING | 470 ns | SILICON | N-Channel | 18m Ω @ 45A, 10V | 4V @ 250μA | 8700pF @ 25V | 285nC @ 10V | 760ns | 410 ns | 25V | 150V | 90A Tc | 10V | ±25V |