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ON Semiconductor(36350)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQU2N90TU-WS | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | QFET® | yes | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | 343.08mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | FET General Purpose Power | 1 | Single | 2.5W | 15 ns | 2.5W Ta 50W Tc | 1.7A | 20 ns | N-Channel | 7.2 Ω @ 850mA, 10V | 5V @ 250μA | 500pF @ 25V | 15nC @ 10V | 35ns | 30 ns | 30V | 900V | 1.7A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| FCU600N65S3R0 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | ACTIVE (Last Updated: 1 day ago) | Tube | SuperFET® III | yes | Active | Not Applicable | RoHS Compliant | TO-251-3 Stub Leads, IPak | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 54W Tc | N-Channel | 600m Ω @ 3A, 10V | 4.5V @ 600μA | 465pF @ 400V | 11nC @ 10V | 6A Tc | 650V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCU900N60Z | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2012 | SuperFET® II | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.8mm | ROHS3 Compliant | Lead Free | Tin | 3 | TO-251-3 Stub Leads, IPak | No SVHC | not_compliant | 7.57mm | 2.5mm | Through Hole | 539mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 1 | Single | 52W | 10.9 ns | 2.5V | 52W Tc | 4.5A | SWITCHING | 0.9Ohm | 33.6 ns | SILICON | N-Channel | 900m Ω @ 2.3A, 10V | 3.5V @ 250μA | 710pF @ 25V | 17nC @ 10V | 5.3ns | 11.9 ns | 20V | 675V | 4.5A Tc | 600V | 47.5 mJ | 10V | ±20V | ||||||||||||||||||||||||||
| FCU850N80Z | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | SuperFET® II | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | not_compliant | 850mOhm | Through Hole | 343.08mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 16 ns | 75W Tc | 6A | 40 ns | N-Channel | 850m Ω @ 3A, 10V | 4.5V @ 600μA | 1315pF @ 100V | 29nC @ 10V | 10ns | 4.5 ns | 20V | 6A Tc | 800V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FCP190N65S3 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | 2017 | SuperFET® III | yes | Active | Not Applicable | RoHS Compliant | TO-220-3 | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Single | 144W Tc | N-Channel | 190m Ω @ 8.5A, 10V | 4.5V @ 1.7mA | 1350pF @ 400V | 33nC @ 10V | 17A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL0330N80 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | PowerTrench® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 8 | 8-PowerSFN | not_compliant | Surface Mount | 850.0521mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | Single | 300W Tc | 220A | N-Channel | 3m Ω @ 80A, 10V | 4V @ 250μA | 6320pF @ 40V | 112nC @ 10V | 220A Tc | 80V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF7N60NT | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | SupreMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | No SVHC | 16.07mm | 4.9mm | 600MOhm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 30.5W | 12 ns | 2V | 30.5W Tc | 6.8A | SWITCHING | 35 ns | SILICON | N-Channel | 520m Ω @ 3.4A, 10V | 4V @ 250μA | 960pF @ 100V | 35.6nC @ 10V | 6ns | 12 ns | 30V | 600V | 6.8A Tc | 20.4A | 79.4 mJ | 10V | ±30V | ||||||||||||||||||||||||||
| FQPF70N10 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 35A | 3 | TO-220-3 Full Pack | not_compliant | 9.19mm | 4.7mm | 23MOhm | Through Hole | 2.27g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | ISOLATED | Single | 62W | 30 ns | 62W Tc | 35A | SWITCHING | 130 ns | SILICON | N-Channel | 23m Ω @ 17.5A, 10V | 4V @ 250μA | 3300pF @ 25V | 110nC @ 10V | 470ns | 160 ns | 25V | 100V | 35A Tc | 10V | ±25V | ||||||||||||||||||||||||||
| FDP060AN08A0 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2002 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 80A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.83mm | 6MOhm | Through Hole | 1.8g | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 255W | 19 ns | 4V | 255W Tc | 80A | SWITCHING | 37 ns | SILICON | N-Channel | 6m Ω @ 80A, 10V | 4V @ 250μA | 5150pF @ 25V | 95nC @ 10V | 79ns | 38 ns | 20V | 75V | 16A Ta 80A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||
| NTP6410ANG | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 1 day ago) | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.28mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 4.82mm | 15.75mm | Through Hole | 4.535924g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 3 | NO | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 188W | 17 ns | 188W Tc | 76A | 120 ns | SILICON | N-Channel | 13m Ω @ 76A, 10V | 4V @ 250μA | 4500pF @ 25V | 120nC @ 10V | 170ns | 190 ns | 20V | 100V | 4 V | 76A Tc | 500 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
| FDBL0210N80 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | 2017 | PowerTrench® | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 8 | 8-PowerSFN | not_compliant | Surface Mount | 850.0521mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FLAT | 245 | NOT SPECIFIED | R-PSSO-F2 | 1 | MO-299A | DRAIN | Single | 357W Tj | 240A | SWITCHING | 0.002Ohm | SILICON | N-Channel | 2m Ω @ 80A, 10V | 4V @ 250μA | 10000pF @ 40V | 169nC @ 10V | 240A Tc | 80V | 512 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDA70N20 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2005 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | 70A | No | 3 | FAST SWITCHING | TO-3P-3, SC-65-3 | No SVHC | 20.1mm | 5mm | 35MOhm | Through Hole | 6.401g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | Single | 417W | 71 ns | 5V | 417W Tc | 70A | SWITCHING | 65 ns | SILICON | N-Channel | 35m Ω @ 35A, 10V | 5V @ 250μA | 3970pF @ 25V | 86nC @ 10V | 235ns | 39 ns | 30V | 200V | 5 V | 70A Tc | 280A | 10V | ±30V | |||||||||||||||||||||||||
| FQPF20N06L | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2001 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 15.7A | 3 | TO-220-3 Full Pack | No SVHC | not_compliant | 9.19mm | 4.7mm | Through Hole | 2.27g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | ISOLATED | Single | 30W | 10 ns | 1V | 30W Tc | 15.7A | SWITCHING | 0.07Ohm | 35 ns | SILICON | N-Channel | 55m Ω @ 7.85A, 10V | 2.5V @ 250μA | 630pF @ 25V | 13nC @ 5V | 156ns | 70 ns | 20V | 60V | 15.7A Tc | 62.8A | 5V 10V | ±20V | ||||||||||||||||||||||||
| FQPF5N40 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3A | No | 3 | TO-220-3 Full Pack | Through Hole | 2.27g | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | ISOLATED | Single | 35W | 12 ns | 35W Tc | 190 ns | 3A | SWITCHING | 20 ns | SILICON | N-Channel | 1.6 Ω @ 1.5A, 10V | 4V @ 250μA | 460pF @ 25V | 13nC @ 10V | 60ns | 30 ns | 30V | 400V | 3A | 3A Tc | 290 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||
| FDB13AN06A0 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | 2003 | PowerTrench® | yes | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 62A | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | not_compliant | 4.83mm | 11.33mm | 13.5MOhm | Surface Mount | 1.31247g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 115W | 9 ns | 4V | 115W Tc | 62A | SWITCHING | 24 ns | SILICON | N-Channel | 13.5m Ω @ 62A, 10V | 4V @ 250μA | 1350pF @ 25V | 29nC @ 10V | 96ns | 26 ns | 20V | 60V | 60V | 4 V | 10.9A Ta 62A Tc | 56 mJ | 6V 10V | ±20V | ||||||||||||||||||
| FDPF8N50NZU | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 20 hours ago) | Through Hole | Tube | 2013 | UniFET-II™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | No | 3 | TO-220-3 Full Pack | 15.87mm | 4.7mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 40W | 17 ns | 40W Tc | 6.5A | SWITCHING | 43 ns | SILICON | N-Channel | 1.2 Ω @ 4A, 10V | 5V @ 250μA | 735pF @ 25V | 18nC @ 10V | 34ns | 27 ns | 25V | 500V | 6.5A Tc | 26A | 80 mJ | 10V | ±25V | ||||||||||||||||||||||||||||||
| FQP4N80 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 3.9A | 3 | TO-220-3 | 9.4mm | 4.7mm | Through Hole | 1.8g | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 130W | 16 ns | 130W Tc | 3.9A | SWITCHING | 35 ns | SILICON | N-Channel | 3.6 Ω @ 1.95A, 10V | 5V @ 250μA | 880pF @ 25V | 25nC @ 10V | 45ns | 35 ns | 30V | 800V | 3.9A Tc | 460 mJ | 10V | ±30V | |||||||||||||||||||||||||||
| FDP80N06 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | 16.51mm | 4.83mm | 10MOhm | Through Hole | 1.8g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 176W | 32 ns | 176W Tc | 80A | SWITCHING | 136 ns | SILICON | N-Channel | 10m Ω @ 40A, 10V | 4V @ 250μA | 3190pF @ 25V | 74nC @ 10V | 259ns | 113 ns | 20V | 60V | 80A Tc | 480 mJ | 10V | ±20V | ||||||||||||||||||||||||||||
| FDP150N10 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | 15MOhm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 110W | 47 ns | 2.5V | 110W Tc | 57A | SWITCHING | 86 ns | SILICON | N-Channel | 15m Ω @ 49A, 10V | 4.5V @ 250μA | 4760pF @ 25V | 69nC @ 10V | 164ns | 83 ns | 20V | 100V | 57A Tc | 228A | 10V | ±20V | ||||||||||||||||||||||||||||
| FQA90N15 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 10 hours ago) | Through Hole | Tube | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | Tin | 90A | 3 | TO-3P-3, SC-65-3 | No SVHC | 18.9mm | 5mm | Through Hole | 6.401g | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | Single | 375W | 105 ns | 4V | 375W Tc | 90A | SWITCHING | 470 ns | SILICON | N-Channel | 18m Ω @ 45A, 10V | 4V @ 250μA | 8700pF @ 25V | 285nC @ 10V | 760ns | 410 ns | 25V | 150V | 90A Tc | 10V | ±25V | ||||||||||||||||||||||||||||
| HUF75345S3ST | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | Tape & Reel (TR) | 1999 | UltraFET™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 75A | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 7mOhm | Surface Mount | 1.31247g | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 325W | 14 ns | 325W Tc | 75A | SWITCHING | 42 ns | SILICON | N-Channel | 7m Ω @ 75A, 10V | 4V @ 250μA | 4000pF @ 25V | 275nC @ 20V | 118ns | 26 ns | 20V | 55V | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||
| FQA160N08 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | 160A | 3 | TO-3P-3, SC-65-3 | 18.9mm | 5mm | Through Hole | 6.401g | -55°C~175°C TJ | 80V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | Single | 375W | 85 ns | 375W Tc | 160A | SWITCHING | 0.007Ohm | 260 ns | SILICON | N-Channel | 7m Ω @ 80A, 10V | 4V @ 250μA | 7900pF @ 25V | 290nC @ 10V | 970ns | 410 ns | 25V | 80V | 160A Tc | 640A | 10V | ±25V | |||||||||||||||||||||||||||
| NVHL040N65S3F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Automotive, AEC-Q101, SuperFET® III, FRFET® | yes | Active | Not Applicable | Non-RoHS Compliant | TO-247-3 | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 446W Tc | N-Channel | 40m Ω @ 32.5A, 10V | 5V @ 2.1mA | 5875pF @ 400V | 153nC @ 10V | 65A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH072N60F-F085 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | ACTIVE, NOT REC (Last Updated: 6 days ago) | Through Hole | Tube | Automotive, AEC-Q101, SuperFET® II | yes | Not For New Designs | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | not_compliant | Through Hole | 6.39g | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | Single | 481W Tc | 52A | N-Channel | 72m Ω @ 26A, 10V | 5V @ 250μA | 6330pF @ 100V | 210nC @ 10V | 52A Tc | 600V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH041N65EFL4 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 5 days ago) | Through Hole | Tube | FRFET®, SuperFET® II | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-4 | Through Hole | 6.289g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Single | 595W Tc | 76A | N-Channel | 41m Ω @ 38A, 10V | 5V @ 7.6mA | 12560pF @ 100V | 298nC @ 10V | 76A Tc | 650V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FCH041N60F-F085 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | ACTIVE, NOT REC (Last Updated: 6 days ago) | Through Hole | Tube | Automotive, AEC-Q101, SuperFET® II | yes | Not For New Designs | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | not_compliant | Through Hole | 6.39g | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | Single | 595W Tc | 76A | N-Channel | 41m Ω @ 38A, 10V | 5V @ 250μA | 10900pF @ 25V | 347nC @ 10V | 76A Tc | 600V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH041N65EF-F155 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 5 days ago) | Through Hole | Tube | FRFET®, SuperFET® II | yes | Active | 1 (Unlimited) | ROHS3 Compliant | 3 | TO-247-3 | No SVHC | not_compliant | Through Hole | 6.39g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 260 | 30 | Single | 5V | 595W Tc | 76A | N-Channel | 41m Ω @ 38A, 10V | 5V @ 7.6mA | 12560pF @ 100V | 298nC @ 10V | Super Junction | 76A Tc | 650V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDU3N40TU | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 14 hours ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.8mm | ROHS3 Compliant | Lead Free | 3 | FAST SWITCHING | TO-251-3 Short Leads, IPak, TO-251AA | not_compliant | 7.57mm | 2.5mm | 3.4Ohm | Through Hole | 343.08mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 30W | 10 ns | 30W Tc | 2A | SWITCHING | 10 ns | SILICON | N-Channel | 3.4 Ω @ 1A, 10V | 5V @ 250μA | 225pF @ 25V | 6nC @ 10V | 30ns | 25 ns | 30V | 400V | 2A | 2A Tc | 8A | 46 mJ | 10V | ±30V | ||||||||||||||||||||||||
| HUF76629D3ST | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | Tape & Reel (TR) | UltraFET™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 20A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 54mOhm | Surface Mount | 260.37mg | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 6.8 ns | 110W Tc | 20A | SWITCHING | 67 ns | SILICON | N-Channel | 52m Ω @ 20A, 10V | 3V @ 250μA | 1285pF @ 25V | 46nC @ 10V | 28ns | 60 ns | 16V | 100V | 20A Tc | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||
| NTPF110N65S3HF | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | FRFET®, SuperFET® III | yes | Active | Not Applicable | TO-220-3 Full Pack | compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 240W Tc | N-Channel | 110m Ω @ 15A, 10V | 5V @ 740μA | 2635pF @ 400V | 62nC @ 10V | 30A Tc | 650V | 10V | ±30V |