Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IRLL014NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Lead Free | Tin | 2A | No | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-261-4, TO-261AA | No SVHC | 1.4478mm | 3.7mm | 200mOhm | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | R-PDSO-G4 | 1 | DRAIN | Single | 2.1W | 5.1 ns | 2V | 1W Ta | 61 ns | 2A | SWITCHING | 14 ns | SILICON | N-Channel | 140m Ω @ 2A, 10V | 2V @ 250μA | 230pF @ 25V | 14nC @ 10V | 4.9ns | 2.9 ns | 16V | 55V | 55V | 2 V | 2A | 2A Ta | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
IRL6342TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | HIGH RELIABILITY | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 14.6MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 6 ns | 1.1V | 2.5W Ta | 9.9A | SWITCHING | 33 ns | SILICON | N-Channel | 14.6m Ω @ 9.9A, 4.5V | 1.1V @ 10μA | 1025pF @ 25V | 11nC @ 4.5V | 12ns | 14 ns | 12V | 30V | 1.1 V | 9.9A Ta | 79A | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRF7309TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | 4A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 4.05mm | 50mOhm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | DUAL | GULL WING | IRF7309PBF | Other Transistors | 1.4W | 2 | 6.3 mm | N-CHANNEL AND P-CHANNEL | 1.4W | 1V | 4A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 25 ns | SILICON | N and P-Channel | 50m Ω @ 2.4A, 10V | 1V @ 250μA | 520pF @ 15V | 25nC @ 4.5V | 20V | 30V | Standard | 1 V | 4A | 4A 3A | 16A | |||||||||||||||||||||||||||||||||||||||||||||
IRF7509TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 8 | 3.048mm | ROHS3 Compliant | Lead Free | 2.7A | No | 8 | ULTRA LOW RESISTANCE | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | No SVHC | 1.11mm | 3.048mm | 200mOhm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | GULL WING | IRF7509PBF | 2 | 1.25W | 2 | N-CHANNEL AND P-CHANNEL | Dual | 1.25W | 1V | 2.7A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 19 ns | SILICON | N and P-Channel | 110m Ω @ 1.7A, 10V | 1V @ 250μA | 210pF @ 25V | 12nC @ 10V | 12ns | 9.3 ns | 20V | 30V | Logic Level Gate | 1 V | 2.7A 2A | ||||||||||||||||||||||||||||||||||||||||||||||||
IRF7501TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | 2.4A | No | 8 | ULTRA LOW RESISTANCE | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | No SVHC | 860μm | 3mm | 135mOhm | Surface Mount | -55°C~150°C TJ | 20V | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | IRF7501PBF | 1.25W | 2 | Dual | 1.25W | 5.7 ns | 700mV | 2.4A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 15 ns | SILICON | 2 N-Channel (Dual) | 135m Ω @ 1.7A, 4.5V | 700mV @ 250μA | 260pF @ 15V | 8nC @ 4.5V | 24ns | 16 ns | 12V | 20V | Logic Level Gate | 700 mV | 19A | ||||||||||||||||||||||||||||||||||||||||||||||
IRF7316TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | -4.9A | No | 8 | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 58mOhm | Surface Mount | -55°C~150°C TJ | -30V | ENHANCEMENT MODE | GULL WING | IRF7316PBF | 2 | 2W | 2 | Dual | 2W | 13 ns | -1V | 66 ns | -4.9A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 34 ns | SILICON | 2 P-Channel (Dual) | 58m Ω @ 4.9A, 10V | 1V @ 250μA | 710pF @ 25V | 34nC @ 10V | 13ns | 32 ns | 20V | -30V | Logic Level Gate | -1 V | 4.9A | 30V | 30A | 140 mJ | |||||||||||||||||||||||||||||||||||||||||
BSC070N10NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 114W | 2.7V | 100V | 114W Tc | 90A | SWITCHING | 0.007Ohm | SILICON | N-Channel | 7m Ω @ 50A, 10V | 3.5V @ 75μA | 4000pF @ 50V | 55nC @ 10V | 10ns | 20V | 90A Tc | 360A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPD60R380P6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ P6 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 12 ns | 600V | 342mOhm | PG-TO252-3 | 83W Tc | 10.6A | 33 ns | N-Channel | 380mOhm @ 3.8A, 10V | 4.5V @ 320μA | 877pF @ 100V | 19nC @ 10V | 6ns | 7 ns | 20V | 600V | 10.6A Tc | 600V | 877pF | 10V | ±20V | 380 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR4615TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 144W | 15 ns | 5V | 144W Tc | 33A | 175°C | SWITCHING | 0.042Ohm | 25 ns | SILICON | N-Channel | 42m Ω @ 21A, 10V | 5V @ 100μA | 1750pF @ 50V | 26nC @ 10V | 35ns | 20 ns | 20V | 150V | 5 V | 33A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRF540NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | 33A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 44MOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 130W | 11 ns | 4V | 130W Tc | 170 ns | 33A | SWITCHING | 39 ns | SILICON | N-Channel | 44m Ω @ 16A, 10V | 4V @ 250μA | 1960pF @ 25V | 71nC @ 10V | 35ns | 35 ns | 20V | 100V | 100V | 4 V | 33A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRLR3636TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 50A | GULL WING | R-PSSO-G2 | 1 | 60V | 1 | TO-252AA | DRAIN | Single | 143W | 45 ns | 2.5V | 143W Tc | 99A | 175°C | SWITCHING | 43 ns | SILICON | N-Channel | 6.8m Ω @ 50A, 10V | 2.5V @ 100μA | 3779pF @ 50V | 49nC @ 4.5V | 216ns | 69 ns | 16V | 60V | 50A Tc | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
BSB013NE2LXIXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | Silver | 7 | 3-WDSON | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 3 | R-MBCC-N3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 2.8W Ta 57W Tc | 36A | SWITCHING | 25V | SILICON | N-Channel | 1.3m Ω @ 30A, 10V | 2V @ 250μA | 4400pF @ 12V | 62nC @ 10V | 6.4ns | 20V | 36A Ta 163A Tc | 25V | 400A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
BSC009NE2LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 10 ns | 25V | 2.5W Ta 74W Tc | 100A | SWITCHING | 0.00125Ohm | 48 ns | SILICON | N-Channel | 0.9m Ω @ 30A, 10V | 2V @ 250μA | 3900pF @ 12V | 57nC @ 10V | 33ns | 19 ns | 20V | 41A | 41A Ta 100A Tc | 400A | 90 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
SPD06N80C3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | CoolMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 6A | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | 1 | 83W | 25 ns | 800V | 780mOhm | PG-TO252-3 | 83W Tc | 6A | 72 ns | N-Channel | 900mOhm @ 3.8A, 10V | 3.9V @ 250μA | 785pF @ 100V | 41nC @ 10V | 15ns | 8 ns | 20V | 6A Ta | 800V | 785pF | 10V | ±20V | 900 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60R380C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ C6 | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | 3 | HIGH VOLTAGE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 83W | 15 ns | 600V | 83W Tc | 10.6A | SWITCHING | 110 ns | SILICON | N-Channel | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 700pF @ 100V | 32nC @ 10V | 10ns | 9 ns | 20V | 600V | 10.6A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRFR3710ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.1976mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 42A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 18MOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 14 ns | 4V | 140W Tc | 53 ns | 42A | 175°C | SWITCHING | 53 ns | SILICON | N-Channel | 18m Ω @ 33A, 10V | 4V @ 250μA | 2930pF @ 25V | 100nC @ 10V | 43ns | 42 ns | 20V | 100V | 100V | 2 V | 42A Tc | 220A | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFP7537PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 20.7mm | 5.31mm | Through Hole | 38.000013g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 230W | 15 ns | 3.7V | 230W Tc | 172A | 82 ns | N-Channel | 3.3m Ω @ 100A, 10V | 3.7V @ 150μA | 7020pF @ 25V | 210nC @ 10V | 105ns | 84 ns | 20V | 172A Tc | 60V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR6215TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | -13A | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 295mOhm | Surface Mount | -55°C~175°C TJ | -150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | Other Transistors | 1 | TO-252AA | DRAIN | Single | 110W | 14 ns | -4V | 110W Tc | 240 ns | -13A | 175°C | SWITCHING | 53 ns | SILICON | P-Channel | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 860pF @ 25V | 66nC @ 10V | 36ns | 37 ns | 20V | -150V | -150V | -4 V | 13A Tc | 150V | 44A | 10V | ±20V | |||||||||||||||||||||||||||||||||
BSC067N06LS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 15 ns | 60V | 2.5W Ta 69W Tc | 15A | SWITCHING | 0.0067Ohm | 37 ns | SILICON | N-Channel | 6.7m Ω @ 50A, 10V | 2.2V @ 35μA | 5100pF @ 30V | 67nC @ 10V | 26ns | 7 ns | 20V | 15A Ta 50A Tc | 200A | 47 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFS4620TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.65mm | 4.826mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 144W | 13.4 ns | 144W Tc | 24A | SWITCHING | 0.0775Ohm | 25.4 ns | SILICON | N-Channel | 77.5m Ω @ 15A, 10V | 5V @ 100μA | 1710pF @ 50V | 38nC @ 10V | 22.4ns | 14.8 ns | 20V | 200V | 24A Tc | 100A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
BSC047N08NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 18 ns | 80V | 2.5W Ta 125W Tc | 18A | SWITCHING | 0.0047Ohm | 44 ns | SILICON | N-Channel | 4.7m Ω @ 50A, 10V | 3.5V @ 90μA | 4800pF @ 40V | 69nC @ 10V | 17ns | 11 ns | 20V | 18A Ta 100A Tc | 400A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IPD600N25N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 250V | 136W Tc | 25A | SWITCHING | 0.06Ohm | SILICON | N-Channel | 60m Ω @ 25A, 10V | 4V @ 90μA | 2350pF @ 100V | 29nC @ 10V | 25A Tc | 100A | 210 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB65R310CFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 11 ns | 650V | 104.2W Tc | 11.4A | SWITCHING | 45 ns | SILICON | N-Channel | 310m Ω @ 4.4A, 10V | 4.5V @ 400μA | 1100pF @ 100V | 41nC @ 10V | 7.5ns | 7 ns | 20V | 11.4A Tc | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
BSC082N10LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 156W | 100V | 156W Tc | 100A | SWITCHING | SILICON | N-Channel | 8.2m Ω @ 100A, 10V | 2.4V @ 110μA | 7400pF @ 50V | 104nC @ 10V | 24ns | 20V | 13.8A Ta 100A Tc | 400A | 377 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRF3205PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Through Hole | Tube | 2001 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.54mm | ROHS3 Compliant | Contains Lead, Lead Free | 110A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 2.54mm | 19.8mm | 4.69mm | 8mOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 150W | 14 ns | 4V | 200W Tc | 104 ns | 110A | 175°C | SWITCHING | 50 ns | SILICON | N-Channel | 8m Ω @ 62A, 10V | 4V @ 250μA | 3247pF @ 25V | 146nC @ 10V | 101ns | 65 ns | 20V | 55V | 55V | 4 V | 75A | 110A Tc | 264 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
BSC110N15NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 8-PowerTDFN | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 125W | 10.3 ns | 9mOhm | PG-TDSON-8-7 | 125W Tc | 76A | 150°C | 14.5 ns | N-Channel | 11mOhm @ 38A, 10V | 4.6V @ 91μA | 2770pF @ 75V | 35nC @ 10V | 20V | 150V | 76A Tc | 150V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC014N06NSTATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | OptiMOS™ | Active | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 1.1mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 3W | 23 ns | 3W Ta 188W Tc | 31A | 175°C | 43 ns | N-Channel | 1.45m Ω @ 50A, 10V | 3.3V @ 120μA | 8125pF @ 30V | 104nC @ 10V | 20V | 60V | 100A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB039N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G6 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-263AA | DRAIN | Halogen Free | 214W | 27 ns | 100V | 214W Tc | 160A | SWITCHING | 0.0039Ohm | 48 ns | SILICON | N-Channel | 3.9m Ω @ 100A, 10V | 3.5V @ 160μA | 8410pF @ 50V | 117nC @ 10V | 59ns | 14 ns | 20V | 160A Tc | 640A | 340 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
BSC022N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | BSC022N04 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40V | 2.5W Ta 69W Tc | 100A | SWITCHING | 0.0032Ohm | SILICON | N-Channel | 2.2m Ω @ 50A, 10V | 2V @ 250μA | 2600pF @ 20V | 37nC @ 10V | 6.8ns | 20V | 40V | 25A | 100A Tc | 400A | 70 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
BSS138NH6327XTSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | SIPMOS® | yes | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2A | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 50V | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 360mW | 2.3 ns | 1V | 60V | 360mW Ta | 14.5 ns | 230mA | 6.7 ns | SILICON | N-Channel | 3.5 Ω @ 230mA, 10V | 1.4V @ 26μA | 41pF @ 25V | 1.4nC @ 10V | 3ns | 8.2 ns | 20V | 60V | 1 V | 230mA Ta | 4.5V 10V | ±20V |
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