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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRFB3207ZPBF IRFB3207ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.66mm ROHS3 Compliant Lead Free Tin 170A No 3 TO-220-3 No SVHC 9.017mm 4.82mm 4.1MOhm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300mW 20 ns 4V 300W Tc 54 ns 170A SWITCHING 55 ns SILICON N-Channel 4.1m Ω @ 75A, 10V 4V @ 150μA 6920pF @ 50V 170nC @ 10V 68ns 20V 75V 75V 4 V 120A Tc 670A 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead 7 ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 53 ns 40V 300W Tc 180A 0.00098Ohm 67 ns SILICON N-Channel 0.98m Ω @ 100A, 10V 4V @ 230μA 22880pF @ 25V 286nC @ 10V 24ns 58 ns 20V 180A Tc 1250 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 441W Tc 192A N-Channel 4.2m Ω @ 115A, 10V 4V @ 250μA 9500pF @ 50V 255nC @ 10V 192A Tc 100V 10V ±20V
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 19 ns 300W Tc 120A SWITCHING 0.002Ohm 75V 70 ns SILICON N-Channel 2m Ω @ 100A, 10V 3.8V @ 273μA 14400pF @ 37.5V 206nC @ 10V 26ns 22 ns 20V 120A Tc 75V 480A 1100 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 56A No 3 TO-220-3 No SVHC 15.24mm 4.69mm 40Ohm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 380W 17 ns 4V 380W Tc 360 ns 56A SWITCHING 52 ns SILICON N-Channel 40m Ω @ 34A, 10V 4V @ 250μA 4220pF @ 25V 220nC @ 10V 64ns 50 ns 20V 200V 200V 4 V 56A Tc 220A 450 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 12 ns 650V 34W Tc 17.5A SWITCHING 0.19Ohm 53.2 ns SILICON N-Channel 190m Ω @ 7.3A, 10V 4.5V @ 730μA 1850pF @ 100V 68nC @ 10V 8.4ns 6.4 ns 20V 17.5A Tc 57.2A 484 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 19.8mm 4.826mm 20MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 1 FET General Purpose Power 1 TO-220AB DRAIN Single 375W 17 ns 5V 375W Tc 76A 175°C SWITCHING 56 ns SILICON N-Channel 20m Ω @ 44A, 10V 5V @ 250μA 5380pF @ 50V 150nC @ 10V 18ns 22 ns 20V 200V 200V 5 V 76A Tc 250 mJ 10V ±20V
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    		 download 20 Weeks Tape & Reel (TR) 2017 OptiMOS™-5 Active 1 (Unlimited) EAR99 ROHS3 Compliant 8-PowerSFN 2.4mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) PG-HSOF-8 NOT SPECIFIED NOT SPECIFIED 1 300W 21 ns 300W Tc 260A 175°C 49 ns N-Channel 1.9m Ω @ 100A, 10V 3.8V @ 210μA 11830pF @ 50V 166nC @ 10V 20V 100V 260A Tc 6V 10V ±20V
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    		 download Tube 2005 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 10.65mm ROHS3 Compliant Lead Free 11A 3 AVALANCHE RATED TO-220-3 Full Pack No SVHC 9.83mm 4.85mm Through Hole -55°C~150°C TJ 800V MOSFET (Metal Oxide) ENHANCEMENT MODE 11A e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 NO Not Qualified 800V 1 TO-220AB ISOLATED Halogen Free Single 41W 25 ns 3V 34W Tc 11A SWITCHING 0.45Ohm 72 ns SILICON N-Channel 450m Ω @ 7.1A, 10V 3.9V @ 680μA 1600pF @ 100V 85nC @ 10V 15ns 7 ns 20V 800V 11A Tc 470 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 24.99mm 5.3086mm 3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-247AC DRAIN Single 280W 19 ns 4V 280W Tc 50 ns 200A 175°C SWITCHING 55 ns SILICON N-Channel 3m Ω @ 75A, 10V 4V @ 150μA 6540pF @ 50V 170nC @ 10V 82ns 83 ns 20V 60V 120A Tc 840A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2007 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 16A No 3 TO-220-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 139W 10 ns 600V 139W Tc 16A SWITCHING 50 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 660μA 1520pF @ 100V 43nC @ 10V 5ns 20V 16A Tc 650V 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Other Transistors 1 TO-220AB DRAIN Single 200W 18 ns -2V 200W Tc 74A SWITCHING 0.02Ohm 61 ns SILICON P-Channel 20m Ω @ 38A, 10V 4V @ 250μA 3400pF @ 25V 180nC @ 10V 99ns 96 ns 20V -55V 74A Tc 55V 260A 10V ±20V
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    		 download 12 Weeks Through Hole Bulk 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free 210A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-247-3 No SVHC 20.7mm 5.3086mm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 230W 18 ns 3.8W Ta 230W Tc 120 ns 210A SWITCHING 53 ns SILICON N-Channel 2.8m Ω @ 76A, 10V 4V @ 250μA 8250pF @ 25V 209nC @ 10V 123ns 24 ns 20V 30V 30V 4 V 90A 210A Tc 7V 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN Halogen Free 151W 15 ns 600V 151W Tc 20.2A SWITCHING 45 ns SILICON N-Channel 190m Ω @ 7.6A, 10V 4.5V @ 630μ 1750pF @ 100V 11nC @ 10V 8ns 7 ns 20V 20.2A Tc 57A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.017mm 4.826mm 1.75MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 TO-220AB DRAIN Single 380W 23 ns 4V 380W Tc 340A SWITCHING 90 ns SILICON N-Channel 1.75m Ω @ 195A, 10V 4V @ 250μA 9200pF @ 25V 240nC @ 10V 220ns 130 ns 20V 40V 195A Tc 10V ±20V
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    		 download 7 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 35W 70 ns 900V 35W Tc 15A SWITCHING 400 ns SILICON N-Channel 340m Ω @ 9.2A, 10V 3.5V @ 1mA 2400pF @ 100V 94nC @ 10V 20ns 25 ns 30V 15A Tc 678 mJ 10V ±20V
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 117W Tc SWITCHING 0.099Ohm 600V SILICON N-Channel 99m Ω @ 10.5A, 10V 4V @ 530μA 1952pF @ 400V 45nC @ 10V 31A Tc 600V 100A 105 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Single 6 ns 60V 50W Tc 50A 25 ns SILICON N-Channel 12m Ω @ 50A, 10V 2.2V @ 20μA 2890pF @ 25V 40nC @ 10V 2ns 5 ns 16V 50A Tc 200A 33 mJ 4.5V 10V ±16V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Not For New Designs 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 13A No 8 ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 3.9878mm 11mOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 1 1 6.3 mm Single 2.5W 8.6 ns 3V 2.5W Ta 110 ns 13A 150°C SWITCHING 52 ns SILICON N-Channel 11m Ω @ 7.3A, 10V 3V @ 250μA 1800pF @ 25V 79nC @ 10V 50ns 46 ns 20V 30V 30V 3 V 13A Ta 260 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Tape & Reel (TR) 2013 yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant 6-VDFN Exposed Pad 1mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE PG-TSDSON-6 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED YES S-PDSO-N6 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.5W 8.4 ns 1.7V 11.5W Tc 18.5A 175°C SWITCHING 9 ns SILICON N-Channel 17m Ω @ 11A, 10V 2.3V @ 10μA 660pF @ 25V 8nC @ 4.5V 20V 60V 18.5A Tc 56A 22 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2012 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 60V 2.1W Ta 46W Tc 40A SWITCHING SILICON N-Channel 6.8m Ω @ 20A, 10V 3.3V @ 20μA 1500pF @ 30V 21nC @ 10V 3ns 20V 40A Tc 160A 43 mJ 6V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1998 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 16A No 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 115mOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 52W 6.4 ns 4V 79W Tc 190 ns 16A SWITCHING 37 ns SILICON N-Channel 115m Ω @ 10A, 10V 4V @ 250μA 640pF @ 25V 44nC @ 10V 27ns 25 ns 20V 100V 100V 4 V 16A Tc 60A 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING Other Transistors 1 Single 2.5W 19 ns -1.8V 2.5W Ta 12A SWITCHING 80 ns SILICON P-Channel 8.5m Ω @ 12A, 20V 2.4V @ 25μA 1680pF @ 25V 52nC @ 10V 57ns 66 ns 25V -30V 12A Ta 30V 96A 10V 20V ±25V
    BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 16 ns -2.5V -30V 2.1W Ta 69W Tc 13.5A SWITCHING 0.0134Ohm 35 ns SILICON P-Channel 8.6m Ω @ 20A, 10V 3.1V @ 105μA 4785pF @ 15V 57.5nC @ 10V 46ns 8 ns 25V 13.5A Ta 40A Tc 30V 160A 105 mJ 6V 10V ±25V
    SPD04P10PLGBTMA1 SPD04P10PLGBTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2007 SIPMOS® no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.35mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 1 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Not Halogen Free 38W 4.6 ns -1.5V -100V 38W Tc -4.2A 0.85Ohm 18 ns SILICON P-Channel 850m Ω @ 3A, 10V 2V @ 380μA 372pF @ 25V 16nC @ 10V 5.7ns 5 ns 20V -100V 4.2A Tc 100V 57 mJ 4.5V 10V ±20V
    BSP125H6327XTSA1 BSP125H6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 1999 SIPMOS® yes Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free No 4 LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA No SVHC 1.5mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 4 1 DRAIN Halogen Free Single 1.7W 7.7 ns 1.9V 600V 1.8W Ta 120mA 20 ns SILICON N-Channel 45 Ω @ 120mA, 10V 2.3V @ 94μA 150pF @ 25V 6.6nC @ 10V 14.4ns 110 ns 20V 600V 1.9 V 120mA Ta 4.5V 10V ±20V
    BSP317PH6327XTSA1 BSP317PH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2008 SIPMOS® yes Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free 4 LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA 1.6mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 1 DRAIN Halogen Free Single 1.8W 5.7 ns -250V 1.8W Ta 430mA 4Ohm 254 ns SILICON P-Channel 4 Ω @ 430mA, 10V 2V @ 370μA 262pF @ 25V 15.1nC @ 10V 11.1ns 67 ns 20V -250V 430mA Ta 250V 4.5V 10V ±20V
    BSP296NH6327XTSA1 BSP296NH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free Tin 4 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA 1.8mm 3.5mm Surface Mount 250.212891mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE PG-SOT223-4 e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 1 DRAIN Halogen Free Single 1.8W 3.5 ns 1.4V 100V 1.8W Ta 1.2A 150°C 0.6Ohm 18.4 ns SILICON N-Channel 600m Ω @ 1.2A, 10V 1.8V @ 100μA 152.7pF @ 25V 6.7nC @ 10V 7.9ns 21.4 ns 20V 100V 1.2A Ta 4.5V 10V ±20V
    BSP170PH6327XTSA1 BSP170PH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2007 SIPMOS® yes Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free Tin 4 AVALANCHE RATED TO-261-4, TO-261AA 1.8mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE PG-SOT223-4 e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 1 Other Transistors 1 DRAIN Halogen Free Single 1.8W 14 ns -3V -60V 1.8W Ta -1.9A 0.3Ohm 92 ns SILICON P-Channel 300m Ω @ 1.9A, 10V 4V @ 250μA 410pF @ 25V 14nC @ 10V 28ns 60 ns 20V -60V 1.9A Ta 60V 7.6A 70 mJ 10V ±20V
    BSZ340N08NS3GATMA1 BSZ340N08NS3GATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 80V 2.1W Ta 32W Tc 6A SWITCHING 0.034Ohm SILICON N-Channel 34m Ω @ 12A, 10V 3.5V @ 12μA 630pF @ 40V 9.1nC @ 10V 3ns 20V 23A 6A Ta 23A Tc 92A 20 mJ 6V 10V ±20V