Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Number of Channels | Subcategory | Qualification Status | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Reverse Recovery Time | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IRFZ46NLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 53A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.65mm | 4.826mm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 120W | 14 ns | 4V | 3.8W Ta 107W Tc | 53A | SWITCHING | 0.0165Ohm | 52 ns | SILICON | N-Channel | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 1696pF @ 25V | 72nC @ 10V | 76ns | 57 ns | 20V | 55V | 53A Tc | 180A | 152 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPD127N06LGBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 136W Tc | SWITCHING | 0.0127Ohm | 60V | SILICON | N-Channel | 12.7m Ω @ 50A, 10V | 2V @ 80μA | 2300pF @ 30V | 69nC @ 10V | 50A | 50A Tc | 60V | 200A | 240 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7457TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 15A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 7MOhm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | 5A | 1 | 20V | Single | 2.5W | 14 ns | 3V | 2.5W Ta | 15A | 150°C | 16 ns | N-Channel | 7m Ω @ 15A, 10V | 3V @ 250μA | 3100pF @ 10V | 42nC @ 4.5V | 16ns | 7.5 ns | 20V | 20V | 15A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR2607ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | 175°C | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W | SWITCHING | 0.022Ohm | 75V | SILICON | N-Channel | 22m Ω @ 30A, 10V | 4V @ 50μA | 1440pF @ 25V | 51nC @ 10V | 42A | 42A Tc | 75V | 180A | 96 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP716NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | Tin | 4 | TO-261-4, TO-261AA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 75V | 122mOhm | PG-SOT223-4 | 1.8W Ta | 2.3A | N-Channel | 160mOhm @ 2.3A, 10V | 1.8V @ 218μA | 315pF @ 25V | 13.1nC @ 10V | 5.5ns | 20V | 2.3A Ta | 75V | 315pF | 4.5V 10V | ±20V | 160 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML5203TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.0226mm | ROHS3 Compliant | Contains Lead | Tin | -3A | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.016mm | 3.05mm | 98MOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | Other Transistors | 1 | Single | 1.25W | 12 ns | -2.5V | 1.25W Ta | -3A | SWITCHING | 88 ns | SILICON | P-Channel | 98m Ω @ 3A, 10V | 2.5V @ 250μA | 510pF @ 25V | 14nC @ 10V | 18ns | 52 ns | 20V | -30V | -30V | -2.5 V | 3A | 3A Ta | 30V | 24A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPN50R800CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2012 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-261-3 | No SVHC | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 3V | 5W Tc | 7.6A | N-Channel | 800m Ω @ 1.5A, 13V | 3.5V @ 130μA | 280pF @ 100V | 12.4nC @ 10V | 7.6A Tc | 500V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD70R900P7SAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | yes | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.55mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 1 | 30.5W | 12 ns | 30.5W Tc | 6A | 150°C | 58 ns | N-Channel | 900m Ω @ 1.1A, 10V | 3.5V @ 60μA | 211pF @ 400V | 6.8nC @ 10V | 16V | 700V | 6A Tc | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP324H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2008 | SIPMOS® | Active | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | 6.5mm | ROHS3 Compliant | Lead Free | Tin | 3 | TO-261-4, TO-261AA | No SVHC | 1.6mm | 6.7mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Halogen Free | Single | 1.7W | 4.6 ns | 1.9V | 400V | 13.6Ohm | PG-SOT223-4 | 1.8W Ta | 170mA | 17 ns | N-Channel | 25Ohm @ 170mA, 10V | 2.3V @ 94μA | 154pF @ 25V | 5.9nC @ 10V | 4.4ns | 68 ns | 20V | 400V | 1.9 V | 170mA Ta | 400V | 154pF | 4.5V 10V | ±20V | 25 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||
BSP318SH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | SIPMOS® | yes | Active | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | Tin | No | 4 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | No SVHC | 1.8mm | 3.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-SOT223-4 | e3 | DUAL | GULL WING | 4 | 1 | 1 | DRAIN | Halogen Free | Single | 1.8W | 12 ns | 1.6V | 60V | 1.8W Ta | 75 ns | 2.6A | 20 ns | SILICON | N-Channel | 90m Ω @ 2.6A, 10V | 2V @ 20μA | 380pF @ 25V | 20nC @ 10V | 15ns | 15 ns | 20V | 60V | 60V | 1.6 V | 2.6A Tj | 60 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
BSP373NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | OptiMOS™ | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 4 | AVALANCHE RATED | TO-261-4, TO-261AA | No SVHC | Surface Mount | 250.212891mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | DRAIN | Halogen Free | Single | 1.8W | 4.6 ns | 3V | 100V | 1.8W Ta | 1.8A | 21.9 ns | SILICON | N-Channel | 240m Ω @ 1.8A, 10V | 4V @ 218μA | 265pF @ 25V | 9.3nC @ 10V | 5.9ns | 13.5 ns | 20V | 1.8A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRF8113TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 16.6A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 5.6MOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | Single | 6.3 mm | 2.5W | 13 ns | 2.2V | 2.5W Ta | 17.2A | 17 ns | N-Channel | 5.6m Ω @ 17.2A, 10V | 2.2V @ 250μA | 2910pF @ 15V | 36nC @ 4.5V | 8.9ns | 3.5 ns | 20V | 30V | 30V | 2.2 V | 17.2A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
SI4435DYTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | -8A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 20mOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | 1 | 6.3 mm | Single | 2.5W | 16 ns | -1V | 2.5W Ta | 51 ns | -8A | 150°C | SWITCHING | 130 ns | SILICON | P-Channel | 20m Ω @ 8A, 10V | 1V @ 250μA | 2320pF @ 15V | 60nC @ 10V | 17ns | 31 ns | 20V | -30V | -30V | -1 V | 8A | 8A Tc | 30V | 50A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRFHM830TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 3.3mm | ROHS3 Compliant | Lead Free | No | 8 | 8-VQFN Exposed Pad | No SVHC | 1mm | 3.3mm | 6MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | S-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.7W | 12 ns | 1.8V | 2.7W Ta 37W Tc | 21A | SWITCHING | 13 ns | SILICON | N-Channel | 3.8m Ω @ 20A, 10V | 2.35V @ 50μA | 2155pF @ 25V | 31nC @ 10V | 25ns | 9.2 ns | 20V | 30V | 1.8 V | 40A | 21A Ta 40A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRF7476TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | Single | 2.5W | 11 ns | 2.5W Ta | 15A | SWITCHING | 19 ns | SILICON | N-Channel | 8m Ω @ 15A, 4.5V | 1.9V @ 250μA | 2550pF @ 6V | 40nC @ 4.5V | 29ns | 8.3 ns | 12V | 12V | 15A Ta | 2.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD50R380CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | yes | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.55mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 98W | 7.2 ns | 3V | 500V | 98W Tc | 14.1A | 150°C | SWITCHING | 35 ns | SILICON | N-Channel | 380m Ω @ 3.2A, 13V | 3.5V @ 260μA | 584pF @ 100V | 24.8nC @ 10V | 20V | 500V | Super Junction | 14.1A Tc | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
BSC079N03SG | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2005 | OptiMOS™ | Obsolete | 1 (Unlimited) | 5 | EAR99 | RoHS Compliant | Lead Free | 40A | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | FLAT | 260 | NOT SPECIFIED | 8 | R-PDSO-F5 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 2.8W Ta 60W Tc | 40A | SWITCHING | 0.0116Ohm | 21 ns | SILICON | N-Channel | 7.9m Ω @ 40A, 10V | 2V @ 30μA | 2230pF @ 15V | 17nC @ 5V | 4.2ns | 3.4 ns | 20V | 30V | 14.6A | 14.6A Ta 40A Tc | 160A | 120 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRLZ24NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Surface Mount | Tape & Reel (TR) | 1996 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 17A | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.699mm | 9.65mm | 60mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 45W | 7.1 ns | 60 ns | 3.8W Ta 45W Tc | 90 ns | 18A | SWITCHING | 20 ns | SILICON | N-Channel | 60m Ω @ 11A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 74ns | 29 ns | 16V | 55V | 55V | 2 V | 18A Tc | 72A | 68 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
IRLMS5703TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Not For New Designs | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 2.9972mm | ROHS3 Compliant | Lead Free | -2.3A | No | 6 | ULTRA LOW RESISTANCE | SOT-23-6 | No SVHC | 1.4478mm | 1.75mm | 180mOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Single | 1.7W | 10 ns | -1V | 1.7W Ta | -2.3A | SWITCHING | 20 ns | SILICON | P-Channel | 180m Ω @ 1.6A, 10V | 1V @ 250μA | 170pF @ 25V | 11nC @ 10V | 12ns | 8.4 ns | 20V | -30V | -30V | -1 V | 2.4A | 2.4A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPB090N06N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 71W | 15 ns | 71W Tc | 50A | SWITCHING | 0.009Ohm | 60V | 20 ns | SILICON | N-Channel | 9m Ω @ 50A, 10V | 4V @ 34μA | 2900pF @ 30V | 36nC @ 10V | 40ns | 5 ns | 20V | 50A Tc | 60V | 200A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRLR7833TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 98A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 4.5MOhm | Surface Mount | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 14 ns | 2.3V | 140W Tc | 140A | SWITCHING | 23 ns | SILICON | N-Channel | 4.5m Ω @ 15A, 10V | 2.3V @ 250μA | 4010pF @ 15V | 50nC @ 4.5V | 6.9ns | 15 ns | 20V | 30V | 30V | 2.3 V | 140A Tc | 560A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRLZ44ZSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 51A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 13.5mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 80W | 14 ns | 3V | 80W Tc | 32 ns | 51A | SWITCHING | 25 ns | SILICON | N-Channel | 13.5m Ω @ 31A, 10V | 3V @ 250μA | 1620pF @ 25V | 36nC @ 5V | 160ns | 42 ns | 16V | 55V | 55V | 3 V | 51A Tc | 204A | 78 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
BSC026NE2LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 25V | 2.5W Ta 29W Tc | 82A | SWITCHING | 0.004Ohm | SILICON | N-Channel | 2.6m Ω @ 30A, 10V | 2V @ 250μA | 1100pF @ 12V | 16nC @ 10V | 24A | 24A Ta 82A Tc | 14 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR2905TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2000 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 41A | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 27mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 69W | 11 ns | 2V | 110W Tc | 120 ns | 42A | 175°C | SWITCHING | 26 ns | SILICON | N-Channel | 27m Ω @ 25A, 10V | 2V @ 250μA | 1700pF @ 25V | 48nC @ 5V | 84ns | 15 ns | 16V | 55V | 55V | 2 V | 20A | 42A Tc | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||
IRFR24N15DTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 24A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.26mm | 2.39mm | 95Ohm | Surface Mount | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 11 ns | 5V | 140W Tc | 24A | SWITCHING | 19 ns | SILICON | N-Channel | 95m Ω @ 14A, 10V | 5V @ 250μA | 890pF @ 25V | 45nC @ 10V | 53ns | 15 ns | 30V | 150V | 150V | 5 V | 24A Tc | 96A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
IRFR2407TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2000 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 42A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 26mOhm | Surface Mount | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 16 ns | 4V | 110W Tc | 150 ns | 42A | SWITCHING | 65 ns | SILICON | N-Channel | 26m Ω @ 25A, 10V | 4V @ 250μA | 2400pF @ 25V | 110nC @ 10V | 90ns | 66 ns | 20V | 75V | 75V | 4 V | 42A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRFR3708TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | 61A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 12.5mOhm | Surface Mount | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 87W | 7.2 ns | 2V | 87W Tc | 61A | 175°C | SWITCHING | 17.6 ns | SILICON | N-Channel | 12.5m Ω @ 15A, 10V | 2V @ 250μA | 2417pF @ 15V | 24nC @ 4.5V | 50ns | 3.7 ns | 12V | 30V | 30V | 2 V | 61A Tc | 244A | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||
IRF7473TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 6.9A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | 6.3 mm | Single | 2.5W | 24 ns | 5.5V | 2.5W Ta | 6.9A | SWITCHING | 0.026Ohm | 29 ns | SILICON | N-Channel | 26m Ω @ 4.1A, 10V | 5.5V @ 250μA | 3180pF @ 25V | 61nC @ 10V | 20ns | 11 ns | 20V | 100V | 100V | 5.5 V | 6.9A Ta | 55A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRF9310TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 4.6MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | R-PDSO-G3 | Other Transistors | 1 | DRAIN | Single | 2.5W | 25 ns | -1.8V | 2.5W Ta | -20A | SWITCHING | 65 ns | SILICON | P-Channel | 4.6m Ω @ 20A, 10V | 2.4V @ 100μA | 5250pF @ 15V | 165nC @ 10V | 47ns | 70 ns | 20V | -30V | -1.8 V | 20A Tc | 30V | 630 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
BSZ150N10LS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 1.7V | 100V | 2.1W Ta 63W Tc | 40A | SWITCHING | 0.02Ohm | SILICON | N-Channel | 15m Ω @ 20A, 10V | 2.1V @ 33μA | 2500pF @ 50V | 35nC @ 10V | 4.6ns | 20V | 100V | 40A Tc | 160A | 4.5V 10V | ±20V |
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