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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Min) | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Forward Voltage | Case Connection | Halogen Free | Row Spacing | Polarity/Channel Type | Element Configuration | Power Dissipation | Breakdown Voltage | Min Breakdown Voltage | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSC080N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 35W | 30V | 2.5W Ta 35W Tc | 14A | SWITCHING | SILICON | N-Channel | 8m Ω @ 30A, 10V | 2.2V @ 250μA | 1700pF @ 15V | 21nC @ 10V | 2.8ns | 20V | 14A Ta 53A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP89H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | SIPMOS® | yes | Active | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | Tin | 4 | LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | No SVHC | 1.6mm | 6.7mm | Surface Mount | 250.212891mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | 1 | FET General Purpose Power | 1 | DRAIN | Halogen Free | Single | 1.7W | 4 ns | 1.4V | 240V | 1.8W Ta | 360mA | 6Ohm | 15.9 ns | SILICON | N-Channel | 6 Ω @ 350mA, 10V | 1.8V @ 108μA | 140pF @ 25V | 6.4nC @ 10V | 3.5ns | 18.4 ns | 20V | 240V | 240V | 1.4 V | 0.35A | 350mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF8302MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 7 | DirectFET™ Isometric MX | 700μm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | MG-WDSON-5 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 22 ns | 1.35V | 2.8W Ta 104W Tc | 31A | 150°C | SWITCHING | 20 ns | SILICON | N-Channel | 1.8m Ω @ 31A, 10V | 2.35V @ 150μA | 6030pF @ 15V | 53nC @ 4.5V | 37ns | 15 ns | 20V | 30V | 31A Ta 190A Tc | 250A | 260 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPA093N06N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 15 ns | 60V | 33W Tc | 43A | SWITCHING | 20 ns | SILICON | N-Channel | 9.3m Ω @ 40A, 10V | 4V @ 34μA | 3900pF @ 30V | 48nC @ 10V | 40ns | 5 ns | 20V | 43A Tc | 172A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP90R340C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 208W | 70 ns | 900V | 208W Tc | 15A | SWITCHING | 400 ns | SILICON | N-Channel | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 2400pF @ 100V | 94nC @ 10V | 20ns | 25 ns | 20V | 15A Tc | 678 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSD316SNH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | Tin | 6 | 6-VSSOP, SC-88, SOT-363 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | 30V | 500mW Ta | 1.4A | N-Channel | 160m Ω @ 1.4A, 10V | 2V @ 3.7μA | 94pF @ 15V | 0.6nC @ 5V | 2.3ns | 20V | 1.4A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC057N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 45W | 30V | 2.5W Ta 45W Tc | 17A | SWITCHING | SILICON | N-Channel | 5.7m Ω @ 30A, 10V | 2.2V @ 250μA | 2400pF @ 15V | 30nC @ 10V | 3.6ns | 20V | 17A Ta 71A Tc | 25 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120NTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 40W Tc | SWITCHING | 0.48Ohm | 100V | SILICON | P-Channel | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 350pF @ 25V | 27nC @ 10V | 6.6A | 6.6A Tc | 100V | 26A | 100 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ099N06LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-N3 | -55°C | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | SWITCHING | 0.0099Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | SILICON | 11A | 160A | 19 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220NTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 43W Tc | SWITCHING | 0.6Ohm | 200V | SILICON | N-Channel | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 300pF @ 25V | 23nC @ 10V | 5A | 5A Tc | 200V | 20A | 46 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R120P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.7mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 95W | 21 ns | 95W Tc | 26A | 150°C | SWITCHING | 81 ns | SILICON | N-Channel | 120m Ω @ 8.2A, 10V | 4V @ 410μA | 1544pF @ 400V | 36nC @ 10V | 20V | 600V | 26A Tc | 650V | 78A | 82 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLS4030TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | P-CHANNEL | 370W | 53 ns | 2.5V | 370W Tc | 190A | SWITCHING | 0.0039Ohm | 110 ns | SILICON | N-Channel | 3.9m Ω @ 110A, 10V | 2.5V @ 250μA | 11490pF @ 50V | 140nC @ 4.5V | 160ns | 87 ns | 16V | 100V | 1 V | 190A Tc | 320 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R060P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.7mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 164W | 23 ns | 164W Tc | 48A | 150°C | SWITCHING | 0.06Ohm | 79 ns | SILICON | N-Channel | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 2895pF @ 400V | 67nC @ 10V | 20V | 600V | 48A Tc | 650V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML2803TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | Tin | 1.2A | No | 3 | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.397mm | 250mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Micro3 | e3 | DUAL | GULL WING | 1 | FET General Purpose Power | 1 | Single | 540mW | 30V | 3.9 ns | 1V | 540mW Ta | 1.2A | 150°C | SWITCHING | 9 ns | SILICON | N-Channel | 250m Ω @ 910mA, 10V | 1V @ 250μA | 85pF @ 25V | 5nC @ 10V | 4ns | 1.7 ns | 20V | 30V | 30V | 1 V | 1.2A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB180N10S402ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | 1 | DRAIN | Halogen Free | Single | 300W | 15 ns | 100V | 300W Tc | 180A | 0.0025Ohm | 30 ns | SILICON | N-Channel | 2.5m Ω @ 100A, 10V | 3.5V @ 275μA | 14600pF @ 25V | 200nC @ 10V | 9ns | 40 ns | 20V | 180A Tc | 720A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR2905ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | 60A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.2606mm | 6.22mm | 13.5MOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 14 ns | 3V | 110W Tc | 33 ns | 42mA | SWITCHING | 24 ns | SILICON | N-Channel | 13.5m Ω @ 36A, 10V | 3V @ 250μA | 1570pF @ 25V | 35nC @ 5V | 130ns | 33 ns | 16V | 55V | 55V | 3 V | 42A | 42A Tc | 240A | 85 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IRFR9120NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | -6.6A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 480mOhm | Surface Mount | -55°C~150°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | Other Transistors | 1 | TO-252AA | DRAIN | Single | 40W | 14 ns | -4V | 40W Tc | 150 ns | -6.6A | SWITCHING | 28 ns | SILICON | P-Channel | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 350pF @ 25V | 27nC @ 10V | 47ns | 31 ns | 20V | -100V | 100V | -4 V | 6.6A Tc | 26A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF7406TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | -5.8A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 45mOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | 1 | 6.3 mm | Single | 2.5W | 16 ns | -1V | 2.5W Ta | 63 ns | -5.8A | 150°C | SWITCHING | 45 ns | SILICON | P-Channel | 45m Ω @ 2.8A, 10V | 1V @ 250μA | 1100pF @ 25V | 59nC @ 10V | 33ns | 47 ns | 20V | -30V | -30V | -1 V | 5.8A Ta | 30V | 23A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF7468TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | 4.9784mm | ROHS3 Compliant | Lead Free | 9.4A | No | 8 | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | 15.5MOhm | Surface Mount | -55°C~150°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 7.6 ns | 2.5W Ta | 9.4A | SWITCHING | 20 ns | SILICON | N-Channel | 15.5m Ω @ 9.4A, 10V | 2V @ 250μA | 2460pF @ 20V | 34nC @ 4.5V | 2.3ns | 3.8 ns | 12V | 40V | 9.4A Ta | 75A | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9393TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | Other Transistors | 1 | Single | 2.5W | 16 ns | 2.5W Ta | 9.2A | SWITCHING | 55 ns | SILICON | P-Channel | 13.3m Ω @ 9.2A, 20V | 2.4V @ 25μA | 1110pF @ 25V | 38nC @ 10V | 44ns | 49 ns | 25V | -30V | 9.2A Ta | 30V | 75A | 10V 20V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC070N10NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | 1.1mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | DRAIN | Halogen Free | Single | 2.5W | 13 ns | 100V | 2.5W Ta 83W Tc | 14A | 150°C | SWITCHING | 0.007Ohm | 24 ns | SILICON | N-Channel | 7m Ω @ 40A, 10V | 3.8V @ 50μA | 2700pF @ 50V | 38nC @ 10V | 5ns | 6 ns | 20V | 100V | 80A Tc | 320A | 55 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7424TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | -11A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 4.05mm | 13.5MOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | 1 | Other Transistors | 1 | -1.2V | 6.3 mm | Single | 2.5W | 15 ns | -2.5V | 2.5W Ta | 60 ns | -11A | 150°C | 150 ns | SILICON | P-Channel | 13.5m Ω @ 11A, 10V | 2.5V @ 250μA | 4030pF @ 25V | 110nC @ 10V | 23ns | 76 ns | 20V | -30V | -30V | -2.5 V | 11A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSZ018NE2LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 5.2 ns | 25V | 2.1W Ta 69W Tc | 22A | SWITCHING | 0.0025Ohm | 25 ns | SILICON | N-Channel | 1.8m Ω @ 20A, 10V | 2V @ 250μA | 2500pF @ 12V | 36nC @ 10V | 4.8ns | 3.6 ns | 20V | 22A Ta 40A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7455TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 15A | No | 8 | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 7.5mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | 1 | Single | 2.5W | 30V | 17 ns | 2V | 2.5W Ta | 96 ns | 15A | 150°C | SWITCHING | 51 ns | SILICON | N-Channel | 7.5m Ω @ 15A, 10V | 2V @ 250μA | 3480pF @ 25V | 56nC @ 5V | 18ns | 44 ns | 12V | 30V | 30V | 2 V | 15A Ta | 200 mJ | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| BSC015NE2LS5IATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 25V | 2.5W Ta 50W Tc | 100A | SWITCHING | 0.0022Ohm | SILICON | N-Channel | 1.5m Ω @ 30A, 10V | 2V @ 250μA | 2000pF @ 12V | 30nC @ 10V | 33A | 33A Ta 100A Tc | 400A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC019N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 40V | 1.5mOhm | PG-TDSON-8-1 | 2.5W Ta 78W Tc | 100A | N-Channel | 1.9mOhm @ 50A, 10V | 2V @ 250μA | 2900pF @ 20V | 41nC @ 10V | 4ns | 20V | 27A Ta 100A Tc | 40V | 2.9nF | 4.5V 10V | ±20V | 1.9 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR18N15DTRLP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | N-Channel | 125m Ω @ 11A, 10V | 5.5V @ 250μA | 900pF @ 25V | 43nC @ 10V | 18A Tc | 150V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU9343PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 175°C | -40°C | 6.7056mm | ROHS3 Compliant | Lead Free | -20A | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | 6.22mm | 2.3876mm | Through Hole | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | 79W | 1 | DRAIN | Single | 79W | 9.5 ns | -20A | AMPLIFIER | 21 ns | P-Channel | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 660pF @ 50V | 47nC @ 10V | 24ns | 9.5 ns | 20V | 30V | 20A Tc | 55V | 60A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3717TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 89W Tc | SWITCHING | 0.004Ohm | 20V | SILICON | N-Channel | 4m Ω @ 15A, 10V | 2.45V @ 250μA | 2830pF @ 10V | 31nC @ 4.5V | 30A | 120A Tc | 20V | 460A | 460 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ084N08NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | 1 | DRAIN | Halogen Free | Single | 13 ns | 80V | 63W Tc | 40A | SWITCHING | 25 ns | SILICON | N-Channel | 8.4m Ω @ 20A, 10V | 3.8V @ 31μA | 1820pF @ 40V | 25nC @ 10V | 5ns | 5 ns | 20V | 80V | 40A Tc | 76 mJ | 6V 10V | ±20V |