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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRF1405ZPBF IRF1405ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.017mm 4.826mm 4.9Ohm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230W 18 ns 4V 230W Tc 75A SWITCHING 48 ns SILICON N-Channel 4.9m Ω @ 75A, 10V 4V @ 250μA 4780pF @ 25V 180nC @ 10V 110ns 82 ns 20V 55V 55V 4 V 75A Tc 600A 420 mJ 10V ±20V
    IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2012 OptiMOS™ Active 1 (Unlimited) 175°C -55°C ROHS3 Compliant Contains Lead 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) Halogen Free Single 4.4 ns 250V 100mOhm PG-TO220-3-1 107W Tc 17A 7.5 ns N-Channel 100mOhm @ 17A, 10V 4V @ 54μA 1500pF @ 25V 19nC @ 10V 3.7ns 1.2 ns 20V 17A Tc 250V 1.5nF 10V ±20V 100 mΩ
    IRF7815PBF IRF7815PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) 3 EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING R-PDSO-G3 FET General Purpose Power 1 DRAIN Single 2.5W 8.4 ns 4V 2.5W Ta 62 ns 5.1A SWITCHING 0.043Ohm 14 ns SILICON N-Channel 43m Ω @ 3.1A, 10V 5V @ 100μA 1647pF @ 75V 38nC @ 10V 3.2ns 8.3 ns 20V 150V 4 V 5.1A Ta 529 mJ 10V ±20V
    IPB70N04S3-07 IPB70N04S3-07 Infineon Technologies $0.00
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    		 Tape & Reel (TR) 2007 OptiMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 10mm RoHS Compliant 3 ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Halogen Free Single 79W 13 ns 40V 79W Tc 80A 0.0071Ohm 17 ns SILICON N-Channel 6.2m Ω @ 70A, 10V 4V @ 50μA 2700pF @ 25V 40nC @ 10V 8ns 7 ns 20V 40V 70A 80A Tc 145 mJ 10V ±20V
    BSC130P03LSGAUMA1 BSC130P03LSGAUMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Obsolete 3 (168 Hours) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerVDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W 11.4 ns -30V 2.5W Ta 69W Tc 12A 43.5 ns SILICON P-Channel 13m Ω @ 22.5A, 10V 2.2V @ 150μA 3670pF @ 15V 73.1nC @ 10V 65.6ns 35.1 ns 25V 12A Ta 22.5A Tc 30V 90A 10V ±25V
    IPD60R950C6 IPD60R950C6 Infineon Technologies $0.00
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    		 download Cut Tape (CT) 2008 CoolMOS™ yes Discontinued 1 (Unlimited) 2 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 37W Tc SWITCHING 0.95Ohm 600V SILICON N-Channel 950m Ω @ 1.5A, 10V 3.5V @ 130μA 280pF @ 100V 13nC @ 10V 4.4A 4.4A Tc 600V 12A 46 mJ 10V ±20V
    BSO220N03MSGXUMA1 BSO220N03MSGXUMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2011 OptiMOS™ Obsolete 3 (168 Hours) 8 EAR99 RoHS Compliant 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE 1.56W 1.56W Ta 7A SWITCHING 0.022Ohm 30V SILICON N-Channel 22m Ω @ 8.6A, 10V 2.1V @ 250μA 800pF @ 15V 10.4nC @ 10V 20V 7A Ta 30V 4.5V 10V ±20V
    BSF083N03LQ G BSF083N03LQ G Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2009 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED 3-WDSON compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN BOTTOM NO LEAD 260 40 3 YES R-MBCC-N3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.2W Ta 36W Tc SWITCHING 0.0142Ohm 30V SILICON N-Channel 8.3m Ω @ 20A, 10V 2.2V @ 250μA 1800pF @ 15V 18nC @ 10V 13A 13A Ta 53A Tc 30V 212A 30 mJ 4.5V 10V ±20V
    IPI45N06S409AKSA1 IPI45N06S409AKSA1 Infineon Technologies $0.00
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    		 download Tube 2009 OptiMOS™ Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE 71W Tc 0.0094Ohm 60V SILICON N-Channel 9.4m Ω @ 45A, 10V 4V @ 34μA 3785pF @ 25V 47nC @ 10V 45A 45A Tc 60V 180A 97 mJ 10V ±20V
    IPP90N06S404AKSA1 IPP90N06S404AKSA1 Infineon Technologies $0.00
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    		 download Tube 2009 OptiMOS™ Obsolete 1 (Unlimited) EAR99 10mm RoHS Compliant 3 TO-220-3 15.65mm 4.4mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) Halogen Free Single 30 ns 60V 150W Tc 90A 40 ns N-Channel 4m Ω @ 90A, 10V 4V @ 90μA 10400pF @ 25V 128nC @ 10V 20V 90A Tc 10V ±20V
    IRF6795MTR1PBF IRF6795MTR1PBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) 3 SMD/SMT EAR99 6.35mm RoHS Compliant Lead Free No 5 LOW CONDUCTION LOSS DirectFET™ Isometric MX No SVHC 506μm 5.05mm 1.8MOhm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER BOTTOM 260 30 R-XBCC-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.8W 16 ns 2.8W Ta 75W Tc 41 ns 32A SWITCHING 16 ns SILICON N-Channel 1.8m Ω @ 32A, 10V 2.35V @ 100μA 4280pF @ 13V 53nC @ 4.5V 27ns 11 ns 20V 25V 25V 1.8 V 32A Ta 160A Tc 4.5V 10V ±20V
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    		 download 24 Weeks Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.572mm 9.65mm 2.1MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 375W 14 ns 4V 375W Tc 293A 118 ns N-Channel 2.1m Ω @ 168A, 10V 4V @ 250μA 8850pF @ 50V 300nC @ 10V 61ns 69 ns 20V 60V 240A Tc 10V ±20V
    IRL1004STRRPBF IRL1004STRRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 10.668mm RoHS Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 150W 16 ns 3.8W Ta 200W Tc 130A SWITCHING 0.0065Ohm 25 ns SILICON N-Channel 6.5m Ω @ 78A, 10V 1V @ 250μA 5330pF @ 25V 100nC @ 4.5V 210ns 14 ns 16V 40V 130A Tc 520A 700 mJ 4.5V 10V ±16V
    IRFS4310TRRPBF IRFS4310TRRPBF Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.007Ohm 100V SILICON N-Channel 7m Ω @ 75A, 10V 4V @ 250μA 7670pF @ 50V 250nC @ 10V 75A 130A Tc 100V 550A 980 mJ 10V ±20V
    IRFSL3806PBF IRFSL3806PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm 15.8MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 40 FET General Purpose Power 1 DRAIN Single 71W 6.3 ns 4V 71W Tc 33 ns 43A SWITCHING 49 ns SILICON N-Channel 15.8m Ω @ 25A, 10V 4V @ 50μA 1150pF @ 50V 30nC @ 10V 40ns 47 ns 20V 60V 43A Tc 170A 10V ±20V
    IRFS4410ZPBF IRFS4410ZPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 230W 16 ns 4V 230W Tc 57 ns 97A SWITCHING 43 ns SILICON N-Channel 9m Ω @ 58A, 10V 4V @ 150μA 4820pF @ 50V 120nC @ 10V 52ns 57 ns 20V 100V 100V 4 V 97A Tc 242 mJ 10V ±20V
    IRFU2307ZPBF IRFU2307ZPBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) Through Hole 175°C -55°C 6.7056mm RoHS Compliant No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 110W 16 ns 4V 16mOhm IPAK (TO-251) 31 ns 110W Tc 47 ns 53A 44 ns N-Channel 16mOhm @ 32A, 10V 4V @ 100μA 2190pF @ 25V 75nC @ 10V 65ns 29 ns 20V 75V 75V 4 V 42A Tc 75V 2.19nF 10V ±20V 16 mΩ
    IRFSL4310ZPBF IRFSL4310ZPBF Infineon Technologies $0.00
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    		 download 15 Weeks Through Hole Tube 2012 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 40 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W 20 ns 250W Tc 120A SWITCHING 0.006Ohm 55 ns SILICON N-Channel 6m Ω @ 75A, 10V 4V @ 150μA 6860pF @ 50V 170nC @ 10V 60ns 57 ns 20V 100V 4 V 120A Tc 560A 10V ±20V
    IRFSL3607PBF IRFSL3607PBF Infineon Technologies $0.00
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    		 download 15 Weeks Through Hole Tube 2008 HEXFET® Obsolete 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 40 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 140W 16 ns 4V 140W Tc 50 ns 80A SWITCHING 0.009Ohm 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 75V 4 V 80A Tc 10V ±20V
    IRL1404ZSPBF IRL1404ZSPBF Infineon Technologies $0.00
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 230W Tc N-Channel 3.1m Ω @ 75A, 10V 2.7V @ 250μA 5080pF @ 25V 110nC @ 5V 75A Tc 40V 4.5V 10V ±16V
    IRFS3806PBF IRFS3806PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 71W 6.3 ns 4V 71W Tc 33 ns 43A SWITCHING 49 ns SILICON N-Channel 15.8m Ω @ 25A, 10V 4V @ 50μA 1150pF @ 50V 30nC @ 10V 40ns 47 ns 20V 60V 43A Tc 10V ±20V
    IRFR3607PBF IRFR3607PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 16 ns 4V 140W Tc 50 ns 80A SWITCHING 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 75V 4 V 56A 56A Tc 10V ±20V
    IRFR1018EPBF IRFR1018EPBF Infineon Technologies $0.00
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    		 download 15 Weeks Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 13 ns 4V 110W Tc 39 ns 79A SWITCHING 0.0084Ohm 55 ns SILICON N-Channel 8.4m Ω @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 56A 56A Tc 88 mJ 10V ±20V
    IRF1018ESPBF IRF1018ESPBF Infineon Technologies $0.00
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    		 download 52 Weeks Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 8.4MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 110W 13 ns 4V 110W Tc 39 ns 79A SWITCHING 55 ns SILICON N-Channel 8.4m Ω @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 79A Tc 88 mJ 10V ±20V
    IRFS3207ZPBF IRFS3207ZPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 6.73mm ROHS3 Compliant Lead Free 170A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 2.39mm 6.22mm 4.1MOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) 1 300W 20 ns 4V 300W Tc 54 ns 170A 55 ns N-Channel 4.1m Ω @ 75A, 10V 4V @ 150μA 6920pF @ 50V 170nC @ 10V 68ns 20V 75V 75V 4 V 120A Tc 10V ±20V
    IRFS4321PBF IRFS4321PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 83A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 15MOhm Surface Mount -55°C~175°C TJ 150V MOSFET (Metal Oxide) 1 Single 330W 18 ns 5V 350W Tc 130 ns 83A 25 ns N-Channel 15m Ω @ 33A, 10V 5V @ 250μA 4460pF @ 25V 110nC @ 10V 60ns 35 ns 30V 150V 150V 5 V 85A Tc 10V ±30V
    IRFI4228PBF IRFI4228PBF Infineon Technologies $0.00
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    		 download 15 Weeks Through Hole Tube 2006 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free 34A No 3 TO-220-3 Full Pack 9.8mm 4.826mm 16MOhm Through Hole -40°C~150°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 46W 46W Tc 34A SWITCHING SILICON N-Channel 16m Ω @ 20A, 10V 5V @ 250μA 4560pF @ 25V 110nC @ 10V 30V 150V 34A Tc 10V ±30V
    IRLR3114ZPBF IRLR3114ZPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 4.9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 140W 25 ns 2.5V 140W Tc 45 ns 130A 33 ns N-Channel 4.9m Ω @ 42A, 10V 2.5V @ 100μA 3810pF @ 25V 56nC @ 4.5V 140ns 50 ns 16V 40V 42A Tc 4.5V 10V ±16V
    IPI100N04S4H2AKSA1 IPI100N04S4H2AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2012 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 18 ns 40V 115W Tc 100A 0.0027Ohm 19 ns SILICON N-Channel 2.7m Ω @ 100A, 10V 4V @ 70μA 7180pF @ 25V 90nC @ 10V 13ns 21 ns 20V 100A Tc 400A 280 mJ 10V ±20V
    IPI65R660CFDXKSA1 IPI65R660CFDXKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 NO Not Qualified 1 Halogen Free Single 63W 9 ns 62.5W Tc 6A SWITCHING 0.66Ohm 40 ns SILICON N-Channel 660m Ω @ 2.1A, 10V 4.5V @ 200μA 615pF @ 100V 22nC @ 10V 8ns 10 ns 30V 650V 6A 6A Tc 17A 115 mJ 10V ±20V