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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Transistor Type | Input Capacitance | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Current - Collector Cutoff (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BCP49H6359XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2007 | Discontinued | 1 (Unlimited) | ROHS3 Compliant | TO-261-4, TO-261AA | Surface Mount | 150°C TJ | BCP49 | 1.5W | 1.5W | PG-SOT223-4 | 500mA | 60V | 1V | NPN - Darlington | 100nA ICBO | 60V | 500mA | 10000 @ 100mA 5V | 1V @ 100μA, 100mA | 200MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCP5310H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Discontinued | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Tin | 4 | TO-261-4, TO-261AA | Surface Mount | 150°C TJ | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BCP53 | Other Transistors | 2W | 2W | 1 | SINGLE | COLLECTOR | PNP | 1A | 80V | 500mV | AMPLIFIER | SILICON | PNP | 125MHz | 100nA ICBO | 100V | 63 @ 150mA 2V | 500mV @ 50mA, 500mA | 125MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSD840NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | 6 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 6-VSSOP, SC-88, SOT-363 | 1mm | 1.25mm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BSD840 | 6 | 2 | 500mW | 2 | Halogen Free | 500mW | 1.9 ns | 550mV | 20V | 880mA | 150°C | 0.4Ohm | METAL-OXIDE SEMICONDUCTOR | 7.8 ns | SILICON | 2 N-Channel (Dual) | 400m Ω @ 880mA, 2.5V | 750mV @ 1.6μA | 78pF @ 10V | 0.26nC @ 2.5V | 2.2ns | 8V | 20V | Logic Level Gate | 3.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S4L11ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~175°C TJ | ENHANCEMENT MODE | e3 | Tin (Sn) | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F6 | 41W | 2 | Halogen Free | 41W | 5 ns | 40V | 20A | 0.0116Ohm | METAL-OXIDE SEMICONDUCTOR | 25 ns | SILICON | 2 N-Channel (Dual) | 11.6m Ω @ 17A, 10V | 2.2V @ 15μA | 1990pF @ 25V | 26nC @ 10V | 2ns | 15 ns | 16V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9910TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | 10A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 13.4MOhm | Surface Mount | -55°C~150°C TJ | 20V | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | IRF9910PBF | FET General Purpose Power | 2W | 2 | Dual | 2W | 10A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | SILICON | 2 N-Channel (Dual) | 9.3m Ω @ 12A, 10V | 2.55V @ 250μA | 900pF @ 10V | 11nC @ 4.5V | 20V | 20V | Logic Level Gate | 2.55 V | 10A 12A | 33 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S4L08ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~175°C TJ | ENHANCEMENT MODE | e3 | Tin (Sn) | FLAT | NOT SPECIFIED | NOT SPECIFIED | 54W | 54W | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | Halogen Free | 7 ns | 40V | 20A | METAL-OXIDE SEMICONDUCTOR | 40 ns | SILICON | 2 N-Channel (Dual) | 8.2m Ω @ 17A, 10V | 2.2V @ 22μA | 3050pF @ 25V | 39nC @ 10V | 3ns | 20 ns | 16V | Logic Level Gate | 145 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N10S4L35ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~175°C TJ | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 43W | 2 | Halogen Free | 43W | 3 ns | 100V | 20A | 18 ns | 2 N-Channel (Dual) | 35m Ω @ 17A, 10V | 2.1V @ 16μA | 1105pF @ 25V | 17.4nC @ 10V | 2ns | 13 ns | 16V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S408AATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | Surface Mount, Wettable Flank | -55°C~175°C TJ | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 65W | Halogen Free | 40V | 20A | 2 N-Channel (Dual) | 7.6m Ω @ 17A, 10V | 4V @ 30μA | 2940pF @ 25V | 36nC @ 10V | Standard | 40V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7324TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | -9A | No | 8 | HIGH RELIABILITY | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 18mOhm | Surface Mount | -55°C~150°C TJ | -20V | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 30 | IRF7324PBF | Other Transistors | 2W | 2 | Dual | 2W | 17 ns | -1V | 270 ns | -9A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 170 ns | SILICON | 2 P-Channel (Dual) | 18m Ω @ 9A, 4.5V | 1V @ 250μA | 2940pF @ 15V | 63nC @ 5V | 36ns | 190 ns | 12V | -20V | Logic Level Gate | 9A | 9A | 20V | 71A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSD223PH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | EAR99 | 2mm | ROHS3 Compliant | Contains Lead | -350mA | 6 | AVALANCHE RATED | 6-VSSOP, SC-88, SOT-363 | 800μm | 1.25mm | Surface Mount | -55°C~150°C TJ | -20V | ENHANCEMENT MODE | 8541.21.00.95 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BSD223 | 250mW | AEC-Q101 | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | Halogen Free | 3.8 ns | -20V | 390mA | METAL-OXIDE SEMICONDUCTOR | 5.1 ns | SILICON | 2 P-Channel (Dual) | 1.2 Ω @ 390mA, 4.5V | 1.2V @ 1.5μA | 56pF @ 15V | 0.62nC @ 4.5V | 5ns | 12V | Logic Level Gate | 0.39A | 20V | 22 pF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7313TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | 6.5A | No | 8 | HIGH RELIABILITY, AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 4.05mm | 29mOhm | Surface Mount | -55°C~150°C TJ | 30V | ENHANCEMENT MODE | e3 | GULL WING | IRF7313PBF | 2 | FET General Purpose Power | 2W | 2 | 6.3 mm | Dual | 2W | 8.1 ns | 1V | 68 ns | 6.5A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 26 ns | SILICON | 2 N-Channel (Dual) | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 650pF @ 25V | 33nC @ 10V | 8.9ns | 17 ns | 20V | 30V | 30V | Standard | 1 V | 30A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7341TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 4.7A | No | 8 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 50mOhm | Surface Mount | -55°C~150°C TJ | 55V | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | IRF7341PBF | 2 | FET General Purpose Power | 2W | 2 | 6.3 mm | Dual | 2W | 8.3 ns | 1V | 90 ns | 4.7A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 32 ns | SILICON | 2 N-Channel (Dual) | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 740pF @ 25V | 36nC @ 10V | 3.2ns | 13 ns | 20V | 55V | 55V | Logic Level Gate | 1 V | 5.1A | 140 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L26AATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | Surface Mount, Wettable Flank | -55°C~175°C TJ | ENHANCEMENT MODE | e3 | Tin (Sn) | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F6 | 33W | 2 | DRAIN | Halogen Free | Dual | 33W | 60V | 20A | METAL-OXIDE SEMICONDUCTOR | 15 ns | SILICON | 2 N-Channel (Dual) | 26m Ω @ 17A, 10V | 2.2V @ 10μA | 1430pF @ 25V | 20nC @ 10V | 3ns | 10 ns | 20V | Logic Level Gate | 35 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N10S4L22ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | 1mm | Surface Mount | -55°C~175°C TJ | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60W | 2 | Halogen Free | 60W | 5 ns | 100V | 20A | 175°C | 30 ns | 2 N-Channel (Dual) | 22m Ω @ 17A, 10V | 2.1V @ 25μA | 1755pF @ 25V | 27nC @ 10V | 3ns | 18 ns | 16V | 100V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0923NDIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | e3 | NOT SPECIFIED | NOT SPECIFIED | 1W | 2 | 2.5W | 32A | 2 N-Channel (Dual) Asymmetrical | 5m Ω @ 20A, 10V | 2V @ 250μA | 1160pF @ 15V | 10nC @ 4.5V | 20V | Logic Level Gate, 4.5V Drive | 17A 32A | 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP2907PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.87mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 209A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-247-3 | No SVHC | 24.99mm | 5.3086mm | 4.5MOhm | Through Hole | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-247AC | DRAIN | Single | 470W | 23 ns | 4V | 470W Tc | 210 ns | 209A | 175°C | SWITCHING | 130 ns | SILICON | N-Channel | 4.5m Ω @ 125A, 10V | 4V @ 250μA | 13000pF @ 25V | 620nC @ 10V | 190ns | 130 ns | 20V | 75V | 75V | 4 V | 90A | 209A Tc | 840A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP20N60C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tube | 2005 | CoolMOS™ | Not For New Designs | 1 (Unlimited) | Through Hole | 150°C | -55°C | 10mm | ROHS3 Compliant | Lead Free | Tin | 20.7A | 3 | TO-220-3 | No SVHC | 9.25mm | 4.4mm | Through Hole | 45.359237g | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | Single | 208W | 10 ns | 3V | 190mOhm | PG-TO220-3-1 | 208W Tc | 20.7A | 67 ns | N-Channel | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 2400pF @ 25V | 114nC @ 10V | 5ns | 4.5 ns | 20V | 600V | 650V | 3 V | 20.7A Tc | 600V | 2.4nF | 10V | ±20V | 190 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4310ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | 6MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 280W | 20 ns | 4V | 280W Tc | 40 ns | 134A | SWITCHING | 55 ns | SILICON | N-Channel | 6m Ω @ 75A, 10V | 4V @ 150μA | 6860pF @ 50V | 170nC @ 10V | 60ns | 57 ns | 20V | 100V | 100V | 4 V | 120A Tc | 560A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8409-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | IRFS8409 | 1 | FET General Purpose Power | Single | 375W | 32 ns | 3V | 375W Tc | 240A | 149 ns | N-Channel | 0.75m Ω @ 100A, 10V | 3.9V @ 250μA | 13975pF @ 25V | 460nC @ 10V | 148ns | 107 ns | 20V | 40V | 3 V | 240A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP110N20NAAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptimWatt™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-220-3 | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 300W | 18 ns | 200V | 300W Tc | 88A | SWITCHING | 41 ns | SILICON | N-Channel | 10.7m Ω @ 88A, 10V | 4V @ 270μA | 7100pF @ 100V | 87nC @ 10V | 26ns | 11 ns | 20V | 88A Tc | 560 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4568PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 24.99mm | 5.3086mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 250 | 30 | 1 | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 517W | 27 ns | 5V | 517W Tc | 171A | 175°C | SWITCHING | 0.0059Ohm | 47 ns | SILICON | N-Channel | 5.9m Ω @ 103A, 10V | 5V @ 250μA | 10470pF @ 50V | 227nC @ 10V | 119ns | 84 ns | 30V | 150V | 150V | 5 V | 171A Tc | 684A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF100P218XKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | 24.99mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.8W | 50 ns | 556W Tc | 209A | 175°C | 170 ns | N-Channel | 1.28m Ω @ 100A, 10V | 3.8V @ 278μA | 25000pF @ 50V | 555nC @ 10V | 20V | 100V | 209A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT012N08N5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerSFN | No SVHC | not_compliant | 2.4mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-HSOF-8 | e3 | Tin (Sn) | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-F2 | 1 | 1 | DRAIN | Halogen Free | Single | 375W | 35 ns | 3V | 80V | 375W Tc | 300A | 175°C | SWITCHING | 82 ns | SILICON | N-Channel | 1.2m Ω @ 150A, 10V | 3.8V @ 280μA | 17000pF @ 40V | 223nC @ 10V | 31ns | 30 ns | 20V | 80V | 52A | 300A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF200P222 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tube | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | 24.99mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | DRAIN | 556W | 25 ns | 556W Tc | 182A | 175°C | SWITCHING | 0.0066Ohm | 77 ns | SILICON | N-Channel | 6.6m Ω @ 82A, 10V | 4V @ 270μA | 9820pF @ 50V | 203nC @ 10V | 20V | 200V | 182A Tc | 728A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R031CFD7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ CFD7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | 25.4mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 278W | 48 ns | 278W Tc | 63A | 150°C | SWITCHING | 175 ns | SILICON | N-Channel | 31m Ω @ 32.6A, 10V | 4.5V @ 1.63mA | 5623pF @ 400V | 141nC @ 10V | 20V | 600V | 63A Tc | 650V | 277A | 326 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW47N60C3FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | 415W Tc | 0.07Ohm | 600V | SILICON | N-Channel | 70m Ω @ 30A, 10V | 3.9V @ 2.7mA | 6800pF @ 25V | 320nC @ 10V | 47A | 47A Tc | 650V | 141A | 1800 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R040C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2015 | CoolMOS™ C7 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | Halogen Free | 600V | 227W Tc | 50A | SWITCHING | 0.04Ohm | SILICON | N-Channel | 40m Ω @ 24.9A, 10V | 4V @ 1.24mA | 4340pF @ 400V | 107nC @ 10V | 50A Tc | 211A | 249 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R037P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | 25.4mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 255W | 22 ns | 255W Tc | 76A | 150°C | SWITCHING | 0.037Ohm | 90 ns | SILICON | N-Channel | 37m Ω @ 29.5A, 10V | 4V @ 1.48mA | 5243pF @ 400V | 121nC @ 10V | 20V | 600V | 76A Tc | 650V | 280A | 295 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP110N20N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | 20.7mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 300W | 18 ns | 200V | 300W Tc | 88A | 175°C | SWITCHING | 41 ns | SILICON | N-Channel | 11m Ω @ 88A, 10V | 4V @ 270μA | 7100pF @ 100V | 87nC @ 10V | 26ns | 11 ns | 20V | 200V | 88A Tc | 560 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI4227PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2007 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.6172mm | ROHS3 Compliant | No | 3 | TO-220-3 Full Pack | No SVHC | 9.8044mm | 4.826mm | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 46W | 17 ns | 5V | 46W Tc | 26A | SWITCHING | 0.025Ohm | 11 ns | SILICON | N-Channel | 25m Ω @ 17A, 10V | 5V @ 250μA | 4600pF @ 25V | 110nC @ 10V | 19ns | 29 ns | 30V | 200V | 26A Tc | 100A | 54 mJ | 10V | ±30V |