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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Element Configuration | Power Dissipation | Min Breakdown Voltage | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSC014N06NSTATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | OptiMOS™ | Active | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 1.1mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 3W | 23 ns | 3W Ta 188W Tc | 31A | 175°C | 43 ns | N-Channel | 1.45m Ω @ 50A, 10V | 3.3V @ 120μA | 8125pF @ 30V | 104nC @ 10V | 20V | 60V | 100A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB039N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G6 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-263AA | DRAIN | Halogen Free | 214W | 27 ns | 100V | 214W Tc | 160A | SWITCHING | 0.0039Ohm | 48 ns | SILICON | N-Channel | 3.9m Ω @ 100A, 10V | 3.5V @ 160μA | 8410pF @ 50V | 117nC @ 10V | 59ns | 14 ns | 20V | 160A Tc | 640A | 340 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFU4615PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.22mm | 2.39mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 144W | 15 ns | 5V | 144W Tc | 33A | SWITCHING | 0.042Ohm | 25 ns | SILICON | N-Channel | 42m Ω @ 21A, 10V | 5V @ 100μA | 1750pF @ 50V | 26nC @ 10V | 35ns | 20 ns | 20V | 150V | 150V | 5 V | 33A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSB056N10NN3GXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Silver | No | 3 | 3-WDSON | No SVHC | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | BOTTOM | 3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.8W | 2.7V | 100V | 2.8W Ta 78W Tc | 9A | SWITCHING | 0.0056Ohm | SILICON | N-Channel | 5.6m Ω @ 30A, 10V | 3.5V @ 100μA | 5500pF @ 50V | 74nC @ 10V | 9ns | 20V | 9A | 9A Ta 83A Tc | 450 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7316TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | -4.9A | No | 8 | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 58mOhm | Surface Mount | -55°C~150°C TJ | -30V | ENHANCEMENT MODE | GULL WING | IRF7316PBF | 2 | 2W | 2 | Dual | 2W | 13 ns | -1V | 66 ns | -4.9A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 34 ns | SILICON | 2 P-Channel (Dual) | 58m Ω @ 4.9A, 10V | 1V @ 250μA | 710pF @ 25V | 34nC @ 10V | 13ns | 32 ns | 20V | -30V | Logic Level Gate | -1 V | 4.9A | 30V | 30A | 140 mJ | ||||||||||||||||||||||||||||||||||||||||||||
| IRLL3303TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Not For New Designs | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 4.6A | No | 3 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | TO-261-4, TO-261AA | No SVHC | 1.8mm | 3.7mm | 31mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | R-PDSO-G4 | FET General Purpose Power | 1 | DRAIN | Single | 2.1W | 7.2 ns | 1V | 1W Ta | 98 ns | 4.6A | SWITCHING | 33 ns | SILICON | N-Channel | 31m Ω @ 4.6A, 10V | 1V @ 250μA | 840pF @ 25V | 50nC @ 10V | 22ns | 28 ns | 16V | 30V | 30V | 1 V | 6.5A | 4.6A Ta | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| IRF7404TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | -6.7A | No | 8 | LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 40mOhm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | Other Transistors | 1 | 6.3 mm | Single | 2.5W | 14 ns | -700mV | 2.5W Ta | 100 ns | -6.7A | 100 ns | SILICON | P-Channel | 40m Ω @ 3.2A, 4.5V | 700mV @ 250μA | 1500pF @ 15V | 50nC @ 4.5V | 32ns | 65 ns | 12V | -20V | -20V | -700 mV | 5.3A | 6.7A Ta | 20V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| BSC100N06LS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 8 ns | 60V | 2.5W Ta 50W Tc | 12A | SWITCHING | 19 ns | SILICON | N-Channel | 10m Ω @ 50A, 10V | 2.2V @ 23μA | 3500pF @ 30V | 45nC @ 10V | 58ns | 20V | 12A Ta 50A Tc | 200A | 22 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR120NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | 11A | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 185mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 48W | 4 ns | 2V | 48W Tc | 160 ns | 10A | 175°C | SWITCHING | 23 ns | SILICON | N-Channel | 185m Ω @ 6A, 10V | 2V @ 250μA | 440pF @ 25V | 20nC @ 5V | 35ns | 22 ns | 16V | 100V | 100V | 2 V | 10A Tc | 85 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| SI4410DYTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 10A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 13.5mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 1 | Single | 2.5W | 11 ns | 1V | 2.5W Ta | 10A | SWITCHING | 38 ns | SILICON | N-Channel | 13.5m Ω @ 10A, 10V | 1V @ 250μA | 1585pF @ 15V | 45nC @ 10V | 7.7ns | 44 ns | 20V | 30V | 30V | 1 V | 10A Ta | 50A | 400 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD30N10S3L34ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 57W | 100V | 57W Tc | 30A | SILICON | N-Channel | 31m Ω @ 30A, 10V | 2.4V @ 29μA | 1976pF @ 25V | 31nC @ 10V | 20V | 30A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7478TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | 4.2A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 26MOhm | Surface Mount | -55°C~150°C TJ | 60V | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 2.5W | 7.7 ns | 3V | 2.5W Ta | 4.2A | 150°C | 44 ns | N-Channel | 26m Ω @ 4.2A, 10V | 3V @ 250μA | 1740pF @ 25V | 31nC @ 4.5V | 2.6ns | 13 ns | 20V | 60V | 7A | 7A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC90N04S5L3R3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 62W Tc | 0.0047Ohm | 40V | SILICON | N-Channel | 3.3m Ω @ 45A, 10V | 2V @ 23μA | 2145pF @ 25V | 40nC @ 10V | 90A | 90A Tc | 40V | 360A | 40 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC070N10NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 114W | 2.7V | 100V | 114W Tc | 90A | SWITCHING | 0.007Ohm | SILICON | N-Channel | 7m Ω @ 50A, 10V | 3.5V @ 75μA | 4000pF @ 50V | 55nC @ 10V | 10ns | 20V | 90A Tc | 360A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R380P6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ P6 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 12 ns | 600V | 342mOhm | PG-TO252-3 | 83W Tc | 10.6A | 33 ns | N-Channel | 380mOhm @ 3.8A, 10V | 4.5V @ 320μA | 877pF @ 100V | 19nC @ 10V | 6ns | 7 ns | 20V | 600V | 10.6A Tc | 600V | 877pF | 10V | ±20V | 380 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR4615TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 144W | 15 ns | 5V | 144W Tc | 33A | 175°C | SWITCHING | 0.042Ohm | 25 ns | SILICON | N-Channel | 42m Ω @ 21A, 10V | 5V @ 100μA | 1750pF @ 50V | 26nC @ 10V | 35ns | 20 ns | 20V | 150V | 5 V | 33A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF540NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | 33A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 44MOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 130W | 11 ns | 4V | 130W Tc | 170 ns | 33A | SWITCHING | 39 ns | SILICON | N-Channel | 44m Ω @ 16A, 10V | 4V @ 250μA | 1960pF @ 25V | 71nC @ 10V | 35ns | 35 ns | 20V | 100V | 100V | 4 V | 33A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLR3636TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 50A | GULL WING | R-PSSO-G2 | 1 | 60V | 1 | TO-252AA | DRAIN | Single | 143W | 45 ns | 2.5V | 143W Tc | 99A | 175°C | SWITCHING | 43 ns | SILICON | N-Channel | 6.8m Ω @ 50A, 10V | 2.5V @ 100μA | 3779pF @ 50V | 49nC @ 4.5V | 216ns | 69 ns | 16V | 60V | 50A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSB013NE2LXIXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | Silver | 7 | 3-WDSON | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 3 | R-MBCC-N3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 2.8W Ta 57W Tc | 36A | SWITCHING | 25V | SILICON | N-Channel | 1.3m Ω @ 30A, 10V | 2V @ 250μA | 4400pF @ 12V | 62nC @ 10V | 6.4ns | 20V | 36A Ta 163A Tc | 25V | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC009NE2LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 10 ns | 25V | 2.5W Ta 74W Tc | 100A | SWITCHING | 0.00125Ohm | 48 ns | SILICON | N-Channel | 0.9m Ω @ 30A, 10V | 2V @ 250μA | 3900pF @ 12V | 57nC @ 10V | 33ns | 19 ns | 20V | 41A | 41A Ta 100A Tc | 400A | 90 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD06N80C3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | CoolMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 6A | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | 1 | 83W | 25 ns | 800V | 780mOhm | PG-TO252-3 | 83W Tc | 6A | 72 ns | N-Channel | 900mOhm @ 3.8A, 10V | 3.9V @ 250μA | 785pF @ 100V | 41nC @ 10V | 15ns | 8 ns | 20V | 6A Ta | 800V | 785pF | 10V | ±20V | 900 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R380C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ C6 | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | 3 | HIGH VOLTAGE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 83W | 15 ns | 600V | 83W Tc | 10.6A | SWITCHING | 110 ns | SILICON | N-Channel | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 700pF @ 100V | 32nC @ 10V | 10ns | 9 ns | 20V | 600V | 10.6A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3710ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.1976mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 42A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 18MOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 14 ns | 4V | 140W Tc | 53 ns | 42A | 175°C | SWITCHING | 53 ns | SILICON | N-Channel | 18m Ω @ 33A, 10V | 4V @ 250μA | 2930pF @ 25V | 100nC @ 10V | 43ns | 42 ns | 20V | 100V | 100V | 2 V | 42A Tc | 220A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRLR2908TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 30A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 28mOhm | Surface Mount | -55°C~175°C TJ | 80V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 120W | 12 ns | 1V | 120W Tc | 30A | 175°C | SWITCHING | 36 ns | SILICON | N-Channel | 28m Ω @ 23A, 10V | 2.5V @ 250μA | 1890pF @ 25V | 33nC @ 4.5V | 95ns | 55 ns | 16V | 80V | 80V | 1 V | 30A Tc | 250 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| IPD50P04P4L11ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 58W | 12 ns | -40V | 58W Tc | 50A | 46 ns | SILICON | P-Channel | 10.6m Ω @ 50A, 10V | 2.2V @ 85μA | 3900pF @ 25V | 59nC @ 10V | 9ns | 39 ns | 16V | 50A Tc | 40V | 200A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML2402TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | Tin | 1.2A | 3 | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.016mm | 3.05mm | 250mOhm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Micro3 | e3 | DUAL | GULL WING | 260 | 30 | FET General Purpose Power | Not Qualified | 1 | Single | 540mW | 20V | 2.5 ns | 700mV | 540mW Ta | 1.2A | SWITCHING | 9.7 ns | SILICON | N-Channel | 250m Ω @ 930mA, 4.5V | 700mV @ 250μA | 110pF @ 15V | 3.9nC @ 4.5V | 9.5ns | 4.8 ns | 12V | 20V | 20V | 700 mV | 1.2A Ta | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| IRLML6244TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.4mm | 27MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | FET General Purpose Power | 1 | Single | 1.3W | 4.9 ns | 900mV | 1.3W Ta | 18 ns | 6.3A | 150°C | SWITCHING | 19 ns | SILICON | N-Channel | 21m Ω @ 6.3A, 4.5V | 1.1V @ 10μA | 700pF @ 16V | 8.9nC @ 4.5V | 7.5ns | 12 ns | 12V | 20V | 12 V | 6.3A Ta | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLML6302TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | Tin | -620mA | No | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.016mm | 1.397mm | 600mOhm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Micro3 | e3 | DUAL | GULL WING | Other Transistors | 1 | Single | 540mW | 20V | 13 ns | -1.5V | 540mW Ta | -780mA | SWITCHING | 22 ns | SILICON | P-Channel | 600m Ω @ 610mA, 4.5V | 1.5V @ 250μA | 97pF @ 15V | 3.6nC @ 4.45V | 18ns | 22 ns | 12V | -20V | -20V | -1.5 V | 0.78A | 780mA Ta | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| BSR92PH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | SIPMOS® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-236-3, SC-59, SOT-23-3 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 6.4 ns | -1.5V | -250V | 500mW Tc | 140mA | 75 ns | SILICON | P-Channel | 11 Ω @ 140mA, 10V | 1V @ 130μA | 109pF @ 25V | 4.8nC @ 10V | 6.3ns | 71 ns | 20V | 0.14A | 140mA Ta | 250V | 8 pF | 2.8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90P04P405ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Cut Tape (CT) | 2010 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 3 ns | -40V | 125W Tc | 90A | 0.0047Ohm | 7 ns | SILICON | P-Channel | 4.7m Ω @ 90A, 10V | 4V @ 250μA | 10300pF @ 25V | 154nC @ 10V | 8ns | 14 ns | 20V | 90A Tc | 40V | 60 mJ | 10V | ±20V |